VISHAY 10TTS08STRLPBF

VS-10TTS08SPbF High Voltage Series
Vishay Semiconductors
Surface Mountable Phase Control SCR, 10 A
FEATURES
2
Anode
• Meets MSL level 1, per J-STD-020, LF
maximum peak of 260 °C
• Compliant to RoHS directive 2002/95/EC
• Halogen-free according to IEC 61249-2-21
definition
1
Cathode
D2PAK
• Designed and qualified for industrial level
3
Gate
APPLICATIONS
• Input rectification (soft start)
• Vishay input diodes, switches and output rectifiers which
are available in identical package outlines
PRODUCT SUMMARY
VT at 6.5 A
< 1.15 V
ITSM
140 A
VRRM
800 V
DESCRIPTION
The VS-10TTS08SPbF High Voltage Series of silicon
controlled rectifiers are specifically designed for medium
power switching and phase control applications. The glass
passivation technology used has reliable operation up to
125 °C junction temperature.
OUTPUT CURRENT IN TYPICAL APPLICATIONS
APPLICATIONS
SINGLE-PHASE BRIDGE
THREE-PHASE BRIDGE
NEMA FR-4 or G-10 glass fabric-based epoxy
with 4 oz. (140 μm) copper
2.5
3.5
Aluminum IMS, RthCA = 15 °C/W
6.3
9.5
Aluminum IMS with heatsink, RthCA = 5 °C/W
14.0
18.5
UNITS
A
Note
• TA = 55 °C, TJ = 125 °C, footprint 300 mm2
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
Sinusoidal waveform
IT(AV)
VALUES
UNITS
6.5
A
IRMS
10
VRRM/VDRM
800
V
ITSM
140
A
1.15
V
150
V/μs
6.5 A, TJ = 25 °C
VT
dV/dt
dI/dt
100
A/μs
- 40 to 125
°C
VRRM, MAXIMUM
PEAK REVERSE VOLTAGE
V
VDRM, MAXIMUM PEAK
DIRECT VOLTAGE
V
IRRM/IDRM
AT 125 °C
mA
800
800
1.0
Range
TJ
VOLTAGE RATINGS
PART NUMBER
VS-10TTS08SPbF
Document Number: 94562
Revision: 08-Jun-10
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
www.vishay.com
1
VS-10TTS08SPbF High Voltage Series
Vishay Semiconductors
Surface Mountable
Phase Control SCR, 10 A
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average on-state current
Maximum RMS on-state current
Maximum peak, one-cycle,
non-repetitive surge current
IT(AV)
IT(RMS)
ITSM
10 ms sine pulse, rated VRRM applied, TJ = 125 °C
120
10 ms sine pulse, no voltage reapplied, TJ = 125 °C
140
A
I2√t
t = 0.1 ms to 10 ms, no voltage reapplied, TJ = 125 °C
1000
VTM
6.5 A, TJ = 25 °C
1.15
V
17.3
mΩ
0.85
V
rt
VT(TO)
Maximum latching current
10
72
Maximum on-state voltage drop
Typical holding current
6.5
TC = 112 °C, 180° conduction half sine wave
100
Maximum I2√t for fusing
Maximum reverse and direct leakage current
UNITS
10 ms sine pulse, rated VRRM applied, TJ = 125 °C
I2t
Threshold voltage
VALUES
10 ms sine pulse, no voltage reapplied, TJ = 125 °C
Maximum I2t for fusing
On-state slope resistance
TEST CONDITIONS
IRM/IDM
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
VR = Rated VRRM/VDRM
A2s
A2√s
0.05
1.0
mA
IH
Anode supply = 6 V, resistive load, initial IT = 1 A
IL
Anode supply = 6 V, resistive load
50
TJ = 25 °C
150
V/μs
100
A/μs
VALUES
UNITS
Maximum rate of rise of off-state voltage
dV/dt
Maximum rate of rise of turned-on current
dI/dt
30
TRIGGERING
PARAMETER
SYMBOL
Maximum peak gate power
TEST CONDITIONS
PGM
8.0
Maximum average gate power
PG(AV)
2.0
Maximum peak positive gate current
+IGM
1.5
A
Maximum peak negative gate voltage
-VGM
10
V
Maximum required DC gate current to trigger
Maximum required DC gate
voltage to trigger
IGT
VGT
Maximum DC gate voltage not to trigger
VGD
Maximum DC gate current not to trigger
IGD
Anode supply = 6 V, resistive load, TJ = - 65 °C
20
Anode supply = 6 V, resistive load, TJ = 25 °C
15
Anode supply = 6 V, resistive load, TJ = 125 °C
10
Anode supply = 6 V, resistive load, TJ = - 65 °C
1.2
Anode supply = 6 V, resistive load, TJ = 25 °C
1
Anode supply = 6 V, resistive load, TJ = 125 °C
0.7
TJ = 125 °C, VDRM = Rated value
W
mA
V
0.2
0.1
mA
VALUES
UNITS
SWITCHING
PARAMETER
SYMBOL
Typical turn-on time
tgt
Typical reverse recovery time
trr
Typical turn-off time
tq
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TEST CONDITIONS
TJ = 25 °C
TJ = 125 °C
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
0.8
3
μs
100
Document Number: 94562
Revision: 08-Jun-10
VS-10TTS08SPbF High Voltage Series
Surface Mountable
Phase Control SCR, 10 A
Vishay Semiconductors
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction and storage
temperature range
TEST CONDITIONS
VALUES
TJ, TStg
Soldering temperature
TS
Maximum thermal resistance,
junction to case
RthJC
UNITS
- 40 to 125
For 10 s (1.6 mm from case)
240
DC operation
1.5
°C
°C/W
Typical thermal resistance,
junction to ambient (PCB mount)
RthJA (1)
40
Approximate weight
2
g
0.07
oz.
Case style D2PAK (SMD-220)
Marking device
10TTS08S
125
10TTS08
R thJC (DC) = 1.5 K/W
120
Conduction Angle
115
30°
60°
90°
110
120°
180°
105
0
1
2
3
4
5
6
7
Maximum Average On-state Power Loss (W)
Maximum Allowable Case Temperature (°C)
Note
(1) When mounted on 1" square (650 mm2) PCB of FR-4 or G-10 material 4 oz. (140 μm) copper 40 °C/W
For recommended footprint and soldering techniques refer to application note #AN-994
8
180°
120°
90°
60°
30°
7
6
5
RMS Limit
4
3
Conduction Angle
2
10TTS08
TJ = 125°C
1
0
0
10TTS08
R thJC (DC) = 1.5 K/W
120
Conduction Period
115
30°
60°
110
90°
120°
180° DC
105
0
2
4
6
8
10
12
Average On-state Current (A)
Fig. 2 - Current Rating Characteristics
Document Number: 94562
Revision: 08-Jun-10
2
3
4
5
6
7
Fig. 3 - On-State Power Loss Characteristics
Maximum Average On-state Power Loss (W)
Maximum Allowable Case Temperature (°C)
Fig. 1 - Current Rating Characteristics
125
1
Average On-state Current (A)
Average On-state Current (A)
12
DC
180°
120°
90°
60°
30°
10
8
6
RMS Limit
4
Conduction Period
10TTS08
TJ = 125°C
2
0
0
2
4
6
8
10
12
Average On-state Current (A)
Fig. 4 - On-State Power Loss Characteristics
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
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VS-10TTS08SPbF High Voltage Series
Peak Half Sine Wave On-state Current (A)
130
Peak Half Sine Wave On-state Current (A)
Surface Mountable
Phase Control SCR, 10 A
Vishay Semiconductors
At Any Rated Load Condition And With
Rated VRRM Applied Following Surge.
120
Initial TJ = 125°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
110
100
90
80
70
10TTS08
60
1
10
100
150
140
130
120
110
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
Initial TJ = 125°C
No Voltage Reapplied
Rated VRRM Reapplied
100
90
80
70
10TTS08
60
50
0.01
0.1
1
Pulse Train Duration (s)
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
Instantaneous On-state Current (A)
1000
10TTS08
100
TJ = 25°C
10
TJ = 125°C
1
0.5
1
1.5
2
2.5
3
3.5
Instantaneous On-state Voltage (V)
Fig. 7 - On-State Voltage Drop Characteristics
Transient Thermal Impedance Z thJC (°C/W)
10
Steady State Value
(DC Operation)
1
0.1
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
Single Pulse
10TTS08
0.01
0.0001
0.001
0. 01
0.1
1
Square Wave Pulse Duration (s)
Fig. 8 - Thermal Impedance ZthJC Characteristics
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For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
Document Number: 94562
Revision: 08-Jun-10
VS-10TTS08SPbF High Voltage Series
Surface Mountable
Phase Control SCR, 10 A
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS-
10
T
T
S
08
S
1
2
3
4
5
6
7
1
-
HPP product suffix
2
-
Current rating, RMS value
3
-
Circuit configuration:
4
-
TRL PbF
8
9
T = Single thyristor
Package:
T = TO-220AC
5
-
Type of silicon:
S = Converter grade
6
-
Voltage code x 100 = VRRM
7
-
S = TO-220 D2PAK (SMD-220) version
8
-
Tape and reel option:
TRL = Tape and reel (left oriented)
TRR = Tape and reel (right oriented)
9
-
PbF = Lead (Pb)-free
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95046
Part marking information
www.vishay.com/doc?95054
Packaging information
www.vishay.com/doc?95032
Document Number: 94562
Revision: 08-Jun-10
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
www.vishay.com
5
Outline Dimensions
Vishay Semiconductors
D2PAK
DIMENSIONS in millimeters and inches
Conforms to JEDEC outline D2PAK (SMD-220)
(2)(3)
E
B
Pad layout
A
A
(E)
c2
11.00
MIN.
(0.43)
A
(3) L1
4
9.65
MIN.
(0.38)
(D1) (3)
Detail A
D
H
1
2
17.90 (0.70)
15.00 (0.625)
(2)
3
3.81
MIN.
(0.15)
L2
B
B
2.32
MIN.
(0.08)
A
2 x b2
c
2.64 (0.103)
2.41 (0.096)
(3)
E1
C
View A - A
2xb
± 0.004 M B
0.010 M A M B
Plating
H
2x e
Base
Metal
(4)
b1, b3
Gauge
plane
Seating
plane
Lead assignments
Diodes
1. - Anode (two die)/open (one die)
2., 4. - Cathode
3. - Anode
SYMBOL
MILLIMETERS
MIN.
c1 (4)
(c)
B
0° to 8°
MAX.
L3
Lead tip
A1
L
(b, b2)
L4
Section B - B and C - C
Scale: None
Detail “A”
Rotated 90 °CW
Scale: 8:1
INCHES
MIN.
MAX.
NOTES
SYMBOL
MILLIMETERS
MIN.
MAX.
INCHES
MIN.
MAX.
NOTES
A
4.06
4.83
0.160
0.190
D1
6.86
8.00
0.270
0.315
3
A1
0.00
0.254
0.000
0.010
E
9.65
10.67
0.380
0.420
2, 3
E1
7.90
8.80
0.311
0.346
3
b
0.51
0.99
0.020
0.039
b1
0.51
0.89
0.020
0.035
b2
1.14
1.78
0.045
0.070
b3
1.14
1.73
0.045
0.068
c
0.38
0.74
0.015
0.029
c1
0.38
0.58
0.015
0.023
c2
1.14
1.65
0.045
0.065
D
8.51
9.65
0.335
0.380
4
4
4
e
0.100 BSC
H
14.61
15.88
0.575
0.625
L
1.78
2.79
0.070
0.110
L1
-
1.65
-
0.066
L2
1.27
1.78
0.050
0.070
L3
2
2.54 BSC
L4
0.25 BSC
4.78
5.28
3
0.010 BSC
0.188
0.208
Notes
(1) Dimensioning and tolerancing per ASME Y14.5 M-1994
(2) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outmost extremes of the plastic body
(3) Thermal pad contour optional within dimension E, L1, D1 and E1
(4) Dimension b1 and c1 apply to base metal only
(5) Datum A and B to be determined at datum plane H
(6) Controlling dimension: inch
(7) Outline conforms to JEDEC outline TO-263AB
Document Number: 95046
Revision: 31-Mar-11
For technical questions within your region, please contact one of the following:
www.vishay.com
[email protected], [email protected], [email protected]
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
Vishay
Disclaimer
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
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Document Number: 91000
Revision: 11-Mar-11
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