UNISONIC TECHNOLOGIES CO., LTD UT65N03 Preliminary Power MOSFET 65 Amps, 30 Volts, 3.7mΩ N-CHANNEL POWER MOSFET DESCRIPTION The UTC UT65N03 is a N-channel Trench technology using UTC’s advanced Trench technology to provide customers with a minimum on-state resistance, low gate charge and superior switching performance. FEATURES * VDS= 30V, ID=65A, * RDS(ON)=65mΩ @ VGS=10V RDS(ON)=97mΩ @ VGS=4.5V * Low Gate Charge (Typ. 25nC) * High Switching Speed * High Power and Current Handling Capability * RoHS Compliant SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Ordering Number Lead Free Halogen Free UT65N03L-TA3-T UT65N03G-TA3-T Note: Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw Copyright © 2010 Unisonic Technologies Co., Ltd Package TO-220 1 G Pin Assignment 2 3 D S Packing Tube 1 of 3 QW-R502-556.a UT65N03 Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified) PARAMETER Drain-Source Voltage Gate-Source Voltage RATINGS UNIT 30 V ±20 V Continuous 65 A Drain Current 130 A Pulsed Single Pulsed Avalanche Energy 71.7 mJ 54 W Power Dissipation PD 0.43 W/°C Junction Temperature TJ 150 °C Storage Temperature TSTG -55~+175 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL CHARACTERISTICS PARAMETER Junction to Ambient Junction to Case SYMBOL VDSS VGSS ID IDM EAS SYMBOL θJA θJC RATINGS 62.5 2.3 UNIT °C/W °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Forward Gate- Source Leakage Current Reverse ON CHARACTERISTICS (Note 2) Gate Threshold Voltage SYMBOL Static Drain-Source On-State Resistance RDS(ON) BVDSS IDSS IGSS VGS(TH) TEST CONDITIONS ID=250µA, VGS=0V VDS=24V, VGS=0V VGS=+20V, VDS=0V VGS=-20V, VDS=0V 30 VDS=VGS, ID=250µA VGS=10V, ID=30A VGS=4.5V, ID=30A 1.3 DYNAMIC PARAMETERS Input Capacitance CISS VGS=0V, f=1MHz, Output Capacitance COSS VDS=20V Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Total Gate Charge QG VGS=5V, VDS=10V, ID=30A Gate to Source Charge QGS Gate to Drain Charge QGD Turn-ON Delay Time tD(ON) Rise Time tR VGS=10V, VDS=25V, ID=30A, RG=3Ω Turn-OFF Delay Time tD(OFF) Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD IS=20A, VGS=10V Maximum Body-Diode Continuous Current IS Maximum Body-Diode Pulsed Current ISM Note: 1. Pulse Test: Pulse Width ≤ 300 _s, Duty Cycle ≤ 2%. 2. Switching characteristics are independent of operating junction temperatures. 3. L=1.0mH, IAS=12A, VDD=24V, RG=25Ω, Satarting TJ=25°C. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 1 +100 -100 1.7 6.5 9.7 3 8.4 14.6 V µA nA nA V mΩ 1177 1400 555 218 pF pF pF 12.2 2.95 6.08 6.3 18.6 20.3 8.8 16 nC nC nC ns ns ns ns 0.85 1.1 65 130 V A A 2 of 3 QW-R502-556.a UT65N03 Preliminary Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 3 QW-R502-556.a