Data Sheet

DISCRETE SEMICONDUCTORS
DATA SHEET
M3D124
BGA2001
Silicon MMIC amplifier
Product specification
Supersedes data of 1999 Jul 23
1999 Aug 11
NXP Semiconductors
Product specification
Silicon MMIC amplifier
BGA2001
FEATURES
PINNING
 Low current, low voltage
PIN
DESCRIPTION
 Very high power gain
1
GND
 Low noise figure
2
RF in
 Integrated temperature compensated biasing
3
GND
 Supply and RF output pin combined.
4
VS + RFout
APPLICATIONS
 RF front end
 Wideband applications, e.g. analog and digital cellular
telephones, cordless telephones (PHS, DECT, etc.)
VS+RFout
handbook, halfpage
3
4
 Radar detectors
BIAS
CIRCUIT
 Low noise amplifiers
 Satellite television tuners (SATV)
2
 High frequency oscillators.
1
Top view
MAM430
RFin
GND
DESCRIPTION
Marking code: A1.
Silicon MMIC amplifier consisting of an NPN double
polysilicon transistor with integrated biasing for low voltage
applications in a plastic, 4-pin dual-emitter SOT343R
package.
Fig.1 Simplified outline (SOT343R) and symbol.
QUICK REFERENCE DATA
SYMBOL
VS
PARAMETER
CONDITIONS
DC supply voltage
RF input AC coupled
TYP.

MAX.
4.5
UNIT
V
IS
DC supply current
VVS-OUT = 2.5 V; RF input AC coupled
4.5

mA
MSG
maximum stable gain
VVS-OUT = 2.5 V; f = 1.8 GHz;
Tamb = 25 C
19.5

dB
NF
noise figure
VVS-OUT = 2.5 V; f = 1.8 GHz; S = opt
1.3

dB
1999 Aug 11
2
NXP Semiconductors
Product specification
Silicon MMIC amplifier
BGA2001
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VS
supply voltage
RF input AC coupled

4.5
V
IS
supply current (DC)
forced by DC voltage on RF input

30
mA
Ts  100 C
Ptot
total power dissipation

135
mW
Tstg
storage temperature
65
+150
C
Tj
operating junction temperature

150
C
THERMAL CHARACTERISTICS
SYMBOL
Rth j-s
PARAMETER
VALUE
UNIT
350
K/W
thermal resistance from junction to soldering point
CHARACTERISTICS
RF input AC coupled; Tj = 25 C; unless otherwise specified.
SYMBOL
IS
MSG
s212
PARAMETER
supply current
maximum stable gain
insertion power gain
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VVS-OUT = 1 V

0.7

mA
VVS-OUT = 2.5 V
3
4.5
6
mA
VVS-OUT = 4.5 V

11

mA
VVS-OUT = 2.5 V;
IVS-OUT = 4 mA; f = 900 MHz

22

dB
VVS-OUT = 2.5 V;
IVS-OUT = 4 mA; f = 1.8 GHz

19.5

dB
VVS-OUT = 2.5 V;
IVS-OUT = 4 mA; f = 900 MHz

18

dB
VVS-OUT = 2.5 V;
IVS-OUT = 4 mA; f = 1.8 GHz

14

dB
PL
load power
at 1 dB gain compression point; 
VVS-OUT = 2.5 V;
IVS-OUT = 4.4 mA; f = 900 MHz;
2

dBm
NF
noise figure
VVS-OUT = 2.5 V;
IVS-OUT = 4 mA; f = 900 MHz;
S = opt

1.3

dB
VVS-OUT = 2.5 V;
IVS-OUT = 4 mA; f = 1.8 GHz;
S = opt

1.3

dB
VVS-OUT = 2.5 V;
IVS-OUT = 4.4 mA; f = 900 MHz

7.4

dBm
VVS-OUT = 2.5 V;

IVS-OUT = 4.5 mA; f = 1800 MHz
4.5

dBm
IP3(in)
input intercept point; note 1
Note
1. See application note: RNR-T45-99-B-0513.
1999 Aug 11
3
NXP Semiconductors
Product specification
Silicon MMIC amplifier
BGA2001
MGS606
200
handbook, halfpage
100 pF
handbook, halfpage
Ptot
(mW)
R1
VS
L1
150
C
RF out
GND
VS-OUT
100
BGA2001
IN
GND
50
C
RF in
0
MGS605
0
50
Fig.2 Typical application circuit.
100
150
200
Fig.3 Power derating curve.
MGS607
12
Ts (°C)
MGS608
16
handbook, halfpage
handbook, halfpage
IVS-OUT
IVS-OUT
(mA)
10
(mA)
(8)
12
(7)
8
(6)
8
(5)
6
(4)
4
(3)
4
(2)
2
(1)
0
0
−40
(1)
(2)
(3)
(4)
0
VVS-OUT = 1 V
VVS-OUT = 1.5 V
VVS-OUT = 2 V
VVS-OUT = 2.5 V
Fig.4
40
80
0
120
Tamb (°C)
2
3
4
VVS-OUT (V)
5
(5) VVS-OUT = 3 V
(6) VVS-OUT = 3.5 V
(7) VVS-OUT = 4 V
(8) VVS-OUT = 4.5 V.
Bias current (IVS-OUT) as a function of
ambient temperature with VVS-OUT as
parameter; typical values.
1999 Aug 11
1
Fig.5
4
Bias current (IVS-OUT) as a function of
voltage at the output pin (VVS-OUT);
typical values.
NXP Semiconductors
Product specification
Silicon MMIC amplifier
BGA2001
MGS609
30
gain
(dB)
25
MGS610
25
handbook, halfpage
handbook, halfpage
gain
(dB)
GUM
20
MSG
MSG
20
GUM
15
15
10
10
5
5
0
0
0
2
4
6
8
10
IVS-OUT (mA)
0
2
f = 900 MHz.
f = 1800 MHz.
Fig.6
Fig.7
Gain as a function of bias current
(IVS-OUT); typical values.
MGS611
40
4
6
8
10
IVS-OUT (mA)
Gain as a function of bias current
(IVS-OUT); typical values.
MGS612
3
min
(dB)
2.5
handbook,
NF halfpage
handbook, halfpage
gain
(dB)
GUM
(1)
30
2
MSG
(2)
(3)
(4)
1.5
20
Gmax
1
10
0.5
0
102
103
f (MHz)
0
10−1
104
VVS-OUT = 2.5 V; IVS-OUT = 4 mA.
(1) f = 2400 MHz
(2) f = 1000 MHz
Fig.8
Fig.9
Gain as a function of frequency;
typical values.
1999 Aug 11
5
1
I C (mA)
10
(3) f = 900 MHz
(4) f = 1800 MHz.
Minimum noise figure as a function of bias
current (IVS-OUT); typical values.
NXP Semiconductors
Product specification
Silicon MMIC amplifier
BGA2001
handbook, full pagewidth
90°
unstable region
source
1.0
+1
135°
45°
+2
+ 0.5
unstable
region load
0.8
0.6
+ 0.2
(1)
180°
0.2
0
0.4
+5
0.5
(2)
Γopt
1
0.2
2
5
0°
(4)
(3)
0
(5)
f = 900 MHz; VVS-OUT = 2.5 V;
IVS-OUT = 4 mA; Zo = 50 .
(1)
(2)
(3)
(4)
(5)
(6)
− 0.2
G = 22 dB
G = 21 dB
G = 20 dB
NF = 1.3 dB
NF = 1.5 dB
NF = 1.7 dB.
−5
(6)
− 0.5
−135°
−2
− 45°
−1
1.0
− 90°
MGS613
Fig.10 Noise, stability and gain circles; typical values.
handbook, full pagewidth
90°
unstable region
source
135°
unstable
region load
1.0
+1
+ 0.5
45°
+2
0.8
0.6
Γopt
(1)
+ 0.2
0.4
+5
(2)
180°
0.2
0
(3)
0.2
0.5
1
(4)
2
5
0°
0
(5)
(6)
f = 1800 MHz; VVS-OUT = 2.5 V;
IVS-OUT = 4 mA; Zo = 50 .
− 0.2
(1)
(2)
(3)
(4)
(5)
(6)
−135°
G = 19 dB
G = 18 dB
G = 17 dB
NF = 1.3 dB
NF = 1.5 dB
NF = 1.7 dB.
−5
− 0.5
−2
− 45°
−1
1.0
− 90°
MGS614
Fig.11 Noise, stability and gain circles; typical values.
1999 Aug 11
6
NXP Semiconductors
Product specification
Silicon MMIC amplifier
BGA2001
90°
handbook, full pagewidth
1.0
+1
135°
45°
+2
+0.5
0.8
0.6
+0.2
0.4
+5
0.2
180°
0.2
0
0.5
1
2
5
0°
0
100 MHz
3 GHz
200 MHz
−0.2
500 MHz
1.8 GHz
1 GHz
900 MHz
−2
−0.5
−135°
−5
−45°
−1
1.0
−90°
VVS-OUT = 2.5 V; IVS-OUT = 4 mA; Zo = 50 .
MGS615
Fig.12 Common emitter input reflection coefficient (s11); typical values.
90°
handbook, full pagewidth
135°
45°
900 MHz
1.8 GHz
1 GHz
500 MHz
3 GHz
200 MHz
100 MHz
180°
10
8
6
4
0°
2
−135°
VVS-OUT = 2.5 V; IVS-OUT = 4 mA; Zo = 50 .
− 45°
− 90°
MGS616
Fig.13 Common emitter forward transmission coefficient (s21); typical values.
1999 Aug 11
7
NXP Semiconductors
Product specification
Silicon MMIC amplifier
BGA2001
90°
handbook, full pagewidth
135°
180°
0.5
0.4
45°
0.3
0.2
3 GHz
0.1
0°
100 MHz
−135°
− 45°
− 90°
MGS617
VVS-OUT = 2.5 V; IVS-OUT = 4 mA; Zo = 50 .
Fig.14 Common emitter reverse transmission coefficient (s12); typical values.
90°
handbook, full pagewidth
1.0
+1
135°
45°
+2
+0.5
0.8
0.6
+0.2
0.4
+5
0.2
180°
0.2
0
0.5
1
2
5
0°
0
100 MHz
200 MHz
−0.2
3 GHz
1.8 GHz
−135°
−0.5
500 MHz
900 MHz
−5
1 GHz
−2
−45°
−1
1.0
−90°
MGS618
VVS-OUT = 2.5 V; IVS-OUT = 4 mA; Zo = 50 .
Fig.15 Common emitter output reflection coefficient (s22); typical values.
1999 Aug 11
8
NXP Semiconductors
Product specification
Silicon MMIC amplifier
BGA2001
PACKAGE OUTLINE
Plastic surface-mounted package; reverse pinning; 4 leads
D
SOT343R
E
B
A
X
HE
y
v M A
e
3
4
Q
A
A1
c
2
w M B
1
bp
Lp
b1
e1
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max
bp
b1
c
D
E
e
e1
HE
Lp
Q
v
w
y
mm
1.1
0.8
0.1
0.4
0.3
0.7
0.5
0.25
0.10
2.2
1.8
1.35
1.15
1.3
1.15
2.2
2.0
0.45
0.15
0.23
0.13
0.2
0.2
0.1
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
ISSUE DATE
97-05-21
06-03-16
SOT343R
1999 Aug 11
EUROPEAN
PROJECTION
9
NXP Semiconductors
Product specification
Silicon MMIC amplifier
BGA2001
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Qualification
This document contains data from the preliminary specification.
Product data sheet
Production
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
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reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
DEFINITIONS
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provided in a Product data sheet shall define the
specification of the product as agreed between NXP
Semiconductors and its customer, unless NXP
Semiconductors and customer have explicitly agreed
otherwise in writing. In no event however, shall an
agreement be valid in which the NXP Semiconductors
product is deemed to offer functions and qualities beyond
those described in the Product data sheet.
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DISCLAIMERS
Limited warranty and liability  Information in this
document is believed to be accurate and reliable.
However, NXP Semiconductors does not give any
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shall have no liability for the consequences of use of such
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Applications  Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
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In no event shall NXP Semiconductors be liable for any
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Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or
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Semiconductors product is suitable and fit for the
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associated with their applications and products.
Notwithstanding any damages that customer might incur
for any reason whatsoever, NXP Semiconductors’
aggregate and cumulative liability towards customer for
the products described herein shall be limited in
accordance with the Terms and conditions of commercial
sale of NXP Semiconductors.
1999 Aug 11
10
NXP Semiconductors
Product specification
Silicon MMIC amplifier
BGA2001
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described herein may be subject to export control
regulations. Export might require a prior authorization from
national authorities.
NXP Semiconductors does not accept any liability related
to any default, damage, costs or problem which is based
on any weakness or default in the customer’s applications
or products, or the application or use by customer’s third
party customer(s). Customer is responsible for doing all
necessary testing for the customer’s applications and
products using NXP Semiconductors products in order to
avoid a default of the applications and the products or of
the application or use by customer’s third party
customer(s). NXP does not accept any liability in this
respect.
Quick reference data  The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Non-automotive qualified products  Unless this data
sheet expressly states that this specific NXP
Semiconductors product is automotive qualified, the
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or application requirements. NXP Semiconductors accepts
no liability for inclusion and/or use of non-automotive
qualified products in automotive equipment or
applications.
Limiting values  Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) will cause permanent damage to
the device. Limiting values are stress ratings only and
(proper) operation of the device at these or any other
conditions above those given in the Recommended
operating conditions section (if present) or the
Characteristics sections of this document is not warranted.
Constant or repeated exposure to limiting values will
permanently and irreversibly affect the quality and
reliability of the device.
In the event that customer uses the product for design-in
and use in automotive applications to automotive
specifications and standards, customer (a) shall use the
product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and
specifications, and (b) whenever customer uses the
product for automotive applications beyond NXP
Semiconductors’ specifications such use shall be solely at
customer’s own risk, and (c) customer fully indemnifies
NXP Semiconductors for any liability, damages or failed
product claims resulting from customer design and use of
the product for automotive applications beyond NXP
Semiconductors’ standard warranty and NXP
Semiconductors’ product specifications.
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Semiconductors products are sold subject to the general
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1999 Aug 11
11
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Printed in The Netherlands
R77/06/pp12
Date of release: 1999 Aug 11