Data Sheet

DISCRETE SEMICONDUCTORS
DATA SHEET
BFG94
NPN 6 GHz wideband transistor
Product specification
September 1995
NXP Semiconductors
Product specification
NPN 6 GHz wideband transistor
FEATURES
BFG94
PINNING
 High power gain
PIN
 Low noise figure
1
emitter
 Low intermodulation distortion
2
base
 Gold metallization ensures
excellent reliability.
3
emitter
4
collector
DESCRIPTION
4
lfpage
DESCRIPTION
1
NPN transistor mounted in a plastic
SOT223 envelope. It is primarily
intended for use in communication
and instrumentation systems.
2
3
Top view
MSB002 - 1
Fig.1 SOT223.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
VCBO
collector-base voltage
open emitter


15
V
VCEO
collector-emitter voltage
open base


12
V
IC
DC collector current


60
mA
Ptot
total power dissipation
up to Ts = 140 C (note 1)


700
mW
Cre
feedback capacitance
IC = 0; VCE = 10 V; f = 1 MHz


0.8
pF
fT
transition frequency
IC = 45 mA; VCE = 10 V; f = 1 GHz;
Tamb = 25 C
4
6

GHz
GUM
maximum unilateral power gain
IC = 45 mA; VCE = 10 V; f = 1 GHz;
Tamb = 25 C
11.5
13.5

dB
VO
output voltage
IC = 45 mA; VCE = 10 V;
dim = 60 dB; RL = 75 ;
f = 800 MHz; Tamb = 25 C

500

mV
PL1
output power at 1 dB gain
compression
IC = 45 mA; VCE = 10 V; f = 1 GHz;
Tamb = 25 C

21.5

dBm
Note
1. Ts is the temperature at the soldering point of the collector tab.
September 1995
2
NXP Semiconductors
Product specification
NPN 6 GHz wideband transistor
BFG94
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter

15
V
VCEO
collector-emitter voltage
open base

12
V
VEBO
emitter-base voltage
open collector
IC
DC collector current
Ptot
total power dissipation
Tstg
Tj

2
V

60
mA

700
mW
storage temperature
65
150
C
junction temperature

175
C
up to Ts = 140 C (note 1)
THERMAL RESISTANCE
SYMBOL
Rth j-s
PARAMETER
thermal resistance from junction to
soldering point
CONDITIONS
up to Ts = 140 C (note 1)
Note
1. Ts is the temperature at the soldering point of the collector tab.
September 1995
3
THERMAL RESISTANCE
50 K/W
NXP Semiconductors
Product specification
NPN 6 GHz wideband transistor
BFG94
CHARACTERISTICS
Tj = 25 C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX.
ICBO
collector cut-off current
IE = 0; VCB = 10 V


100
hFE
DC current gain
IC = 30 mA; VCE = 5 V
45
90

IC = 45 mA; VCE = 10 V

100

UNIT
nA
Cc
collector capacitance
IE = ie = 0; VCB = 10 V; f = 1 MHz

0.9
2
pF
Ce
emitter capacitance
IC = ie = 0; VEB = 0.5 V; f = 1 MHz

2.9
4.5
pF
Cre
feedback capacitance
IC = ic = 0; VCE = 10 V; f = 1 MHz

0.5
0.8
pF
fT
transition frequency
IC = 45 mA; VCE = 10 V; f = 1 GHz;
Tamb = 25 C
4


GHz
IC = 30 mA; VCE = 5 V; f = 1 GHz;
Tamb = 25 C
4
6

GHz
GUM
maximum unilateral power gain
(note1)
IC = 45 mA; VCE = 10 V; f = 1 GHz;
Tamb = 25 C
11.5
13.5

dB
F
minimum noise figure
s = opt; IC = 45 mA; VCE = 10 V;
f = 500 MHz

2.7

dB
s = opt; IC = 45 mA; VCE = 10 V;
f = 1 GHz

3

dB
VO
output voltage
note 2

500

mV
d2
second order intermodulation
distortion
note 3

51

dB
PL1
output power at 1 dB gain
compression
IC = 45 mA; VCE = 10 V; RL = 50 ; 
Tamb = 25 C; measured at f = 1 GHz
21.5

dBm
ITO
third order intercept point
note 4
34

dBm

Notes
1. GUM is the maximum unilateral power gain, assuming S12 is zero and
2
S 21
- dB.
G UM = 10 log --------------------------------------------------------2
2
 1 – S 11   1 – S 22 
2. dim = 60 dB (DIN 45004B, par 6.3: 3-tone); IC = 45 mA; VCE = 10 V; RL = 75 ; Tamb = 25 C;
Vp = VO at dim = 60 dB; fp = 795.25 MHz;
Vq = VO 6 dB; Vr = VO 6 dB;
fq = 803.25 MHz; fr = 805.25 MHz;
measured at f(p+qr) = 793.25 MHz.
3. IC = 45 mA; VCE = 10 V; RL = 75 ; Tamb = 25 C;
Vq = VO = 280 mV;
fp = 250 MHz; fq = 560 MHz;
measured at f(p+q) = 810 MHz.
4. IC = 45 mA; VCE = 10 V; RL = 50 ; Tamb = 25 C;
fp = 1000 MHz; fq = 1001 MHz;
measured at f(2pq) and f(2qp).
September 1995
4
NXP Semiconductors
Product specification
NPN 6 GHz wideband transistor
BFG94
+VCC
+VBB
L3
10 kΩ
L2
1 nF
1 nF
L1
247 Ω
1 nF
input
75 Ω
output
75 Ω
INPUT SLUG TUNER
BIAS
TEE
input
OUTPUT SLUG TUNER
BIAS
TEE
output
DUT
TEST
FIXTURE
DUT
2 pF
33 Ω
33 Ω
MBB789
MBB780
L1 = L3 = 5 H micro-choke.
L2 = 1 turn copper wire (0.4 mm), internal diameter 4 mm.
Fig.2
Test circuit for second and third order
intermodulation distortion.
Fig.3
Measurement set-up for third order
intercept point and 1 dB gain compression.
MBB790
800
MCD087
120
handbook, halfpage
handbook, halfpage
P tot
(mW)
h FE
600
80
400
40
200
0
0
50
100
150
0
200
0
Ts (°C)
10
20
IC (mA)
30
VCE = 10 V; Tj = 25 C
Fig.4 Power derating curve.
September 1995
Fig.5
5
DC current gain as a function of collector
current.
NXP Semiconductors
Product specification
NPN 6 GHz wideband transistor
BFG94
MBB791
1
MCD089
8
handbook, halfpage
handbook, halfpage
C re
(pF)
fT
(GHz)
0.8
6
0.6
4
0.4
2
0.2
0
0
0
4
8
12
16
V CE (V)
0
10
20
30
40
I C (mA)
IC = ic = 0; f = 1 MHz.
VCE = 10 V; f = 1 GHz.
Fig.6
Fig.7
Feedback capacitance as a function of
collector-emitter voltage.
Transition frequency as a function of
collector current.
MBB792
MBB793
60
40
handbook, halfpage
handbook, halfpage
G UM
G UM
(dB)
(dB)
30
40
20
20
10
0
40
0
400
f (MHz)
4000
10
Ic = 45 mA; VCE = 10 V.
Ic = 20 mA; VCE = 8 V.
Fig.8
Fig.9
Maximum unilateral power gain as a
function of frequency.
September 1995
6
102
103
f (MHz)
104
Maximum unilateral power gain as a
function of frequency.
NXP Semiconductors
Product specification
NPN 6 GHz wideband transistor
BFG94
MBB794
MBB795
30
20
handbook, halfpage
handbook, halfpage
G max
gain
(dB)
(dB)
15
20
G max
10
G UM
10
5
0
10
10
2
103
f (MHz)
10
0
4
0
20
50
40
I C (mA)
30
VCE = 8 V; f = 1 GHz.
Gmax = maximum available stable gain.
GUM = maximum unilateral power gain.
Ic = 20 mA; VCE = 8 V.
Fig.10 Maximum available stable gain as a
function of frequency.
Fig.11 Gain as a function of collector current.
MBB782
20
MBB781
20
handbook, halfpage
handbook, halfpage
d2
(dB)
d3
(dB)
40
40
60
60
80
10
10
30
50
I C (mA)
80
70
10
30
50
I C (mA)
70
Ic = 45 mA; VCE = 10 V; f(pq) = 810 MHz.
See test circuit, Fig.2
Ic = 45 mA; VCE = 10 V; f(pqr) = 793.25 MHz.
See test circuit, Fig.2
Fig.12 Second order intermodulation distortion as
a function of collector current.
Fig.13 Third order intermodulation distortion as a
function of collector current.
September 1995
7
NXP Semiconductors
Product specification
NPN 6 GHz wideband transistor
BFG94
MCD094
4
handbook, halfpage
F
(dB)
f = 2 GHz
3
1 GHz
500 MHz
2
1
0
1
10
I C (mA)
10 2
VCE = 8 V.
Fig.14 Minimum noise figure as a function of
collector current.
September 1995
8
NXP Semiconductors
Product specification
NPN 6 GHz wideband transistor
handbook, full pagewidth
BFG94
stability
circle
1
0.5
uns
tab
le r
e
gion
2
0.2
5
+j
0
0.2
0.5
F min
B
80 d
T
OP
10
= 1.
2
5
10
∞
1
−j
B
2d
10
dB
2.5
B
3d
0.2
5
B
4d
B
5d
2
0.5
MBB788
1
Ic = 15 mA; VCE = 10 V; f = 500 MHz.
Fig.15 Noise circle.
1
handbook, full pagewidth
0.5
2
0.2
5
25
dB
0
0.2
10
2.
T 1
2
OP
5
10
∞
5
d
dB B
10
3.
3
dB
2.
5
−j
in
Fm
0.5
=
dB
+j
dB
5
5
4
0.2
2
0.5
1
Ic = 15 mA; VCE = 10 V; f =1 GHz.
Fig.16 Noise circle.
September 1995
9
MBB787
NXP Semiconductors
Product specification
NPN 6 GHz wideband transistor
BFG94
50
handbook, full pagewidth
25
100
3 GHz
10
250
+j
10
0
25
50
100
250
∞
–j
40 MHz
10
250
100
25
MBB784
50
IC = 45 mA; VCE = 10 V.
ZO = 50 .
Fig.17 Common emitter input reflection coefficient (S11).
90°
handbook, full pagewidth
120°
60°
150°
30°
3 GHz
+ϕ
180°
0.5
0.4
0.3
0.2
0.1
0°
40 MHz
−ϕ
30°
150°
60°
120°
90°
MBB786
IC = 45 mA; VCE = 10 V.
Fig.18 Common emitter forward transmission coefficient (S21).
September 1995
10
NXP Semiconductors
Product specification
NPN 6 GHz wideband transistor
BFG94
90°
handbook, full pagewidth
120°
60°
150°
30°
40 MHz
+ϕ
50
180°
40
30
20
10
0°
3 GHz
−ϕ
30°
150°
60°
120°
MBB785
90°
IC = 45 mA; VCE = 10 V.
Fig.19 Common emitter reverse transmission coefficient (S12).
50
handbook, full pagewidth
25
100
10
250
+j
0
10
25
3 GHz
50
100
250
∞
–j
40 MHz
250
10
100
25
50
MBB783
IC = 45 mA; VCE = 10 V.
ZO = 50 .
Fig.20 Common emitter output reflection coefficient (S22).
September 1995
11
NXP Semiconductors
Product specification
NPN 6 GHz wideband transistor
BFG94
PACKAGE OUTLINE
Plastic surface-mounted package with increased heatsink; 4 leads
D
SOT223
E
B
A
X
c
y
HE
v M A
b1
4
Q
A
A1
1
2
3
Lp
bp
e1
w M B
detail X
e
0
2
4 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
bp
b1
c
D
E
e
e1
HE
Lp
Q
v
w
y
mm
1.8
1.5
0.10
0.01
0.80
0.60
3.1
2.9
0.32
0.22
6.7
6.3
3.7
3.3
4.6
2.3
7.3
6.7
1.1
0.7
0.95
0.85
0.2
0.1
0.1
OUTLINE
VERSION
SOT223
September 1995
REFERENCES
IEC
JEDEC
JEITA
SC-73
12
EUROPEAN
PROJECTION
ISSUE DATE
04-11-10
06-03-16
NXP Semiconductors
Product specification
NPN 6 GHz wideband transistor
BFG94
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Qualification
This document contains data from the preliminary specification.
Product data sheet
Production
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
Right to make changes  NXP Semiconductors
reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
DEFINITIONS
Product specification  The information and data
provided in a Product data sheet shall define the
specification of the product as agreed between NXP
Semiconductors and its customer, unless NXP
Semiconductors and customer have explicitly agreed
otherwise in writing. In no event however, shall an
agreement be valid in which the NXP Semiconductors
product is deemed to offer functions and qualities beyond
those described in the Product data sheet.
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not designed, authorized or warranted to be suitable for
use in life support, life-critical or safety-critical systems or
equipment, nor in applications where failure or malfunction
of an NXP Semiconductors product can reasonably be
expected to result in personal injury, death or severe
property or environmental damage. NXP Semiconductors
accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at
the customer’s own risk.
DISCLAIMERS
Limited warranty and liability  Information in this
document is believed to be accurate and reliable.
However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to
the accuracy or completeness of such information and
shall have no liability for the consequences of use of such
information.
Applications  Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
In no event shall NXP Semiconductors be liable for any
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Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or
customer product design. It is customer’s sole
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Semiconductors product is suitable and fit for the
customer’s applications and products planned, as well as
for the planned application and use of customer’s third
party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks
associated with their applications and products.
Notwithstanding any damages that customer might incur
for any reason whatsoever, NXP Semiconductors’
aggregate and cumulative liability towards customer for
the products described herein shall be limited in
accordance with the Terms and conditions of commercial
sale of NXP Semiconductors.
September 1995
13
NXP Semiconductors
Product specification
NPN 6 GHz wideband transistor
BFG94
Export control  This document as well as the item(s)
described herein may be subject to export control
regulations. Export might require a prior authorization from
national authorities.
NXP Semiconductors does not accept any liability related
to any default, damage, costs or problem which is based
on any weakness or default in the customer’s applications
or products, or the application or use by customer’s third
party customer(s). Customer is responsible for doing all
necessary testing for the customer’s applications and
products using NXP Semiconductors products in order to
avoid a default of the applications and the products or of
the application or use by customer’s third party
customer(s). NXP does not accept any liability in this
respect.
Quick reference data  The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Non-automotive qualified products  Unless this data
sheet expressly states that this specific NXP
Semiconductors product is automotive qualified, the
product is not suitable for automotive use. It is neither
qualified nor tested in accordance with automotive testing
or application requirements. NXP Semiconductors accepts
no liability for inclusion and/or use of non-automotive
qualified products in automotive equipment or
applications.
Limiting values  Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) will cause permanent damage to
the device. Limiting values are stress ratings only and
(proper) operation of the device at these or any other
conditions above those given in the Recommended
operating conditions section (if present) or the
Characteristics sections of this document is not warranted.
Constant or repeated exposure to limiting values will
permanently and irreversibly affect the quality and
reliability of the device.
In the event that customer uses the product for design-in
and use in automotive applications to automotive
specifications and standards, customer (a) shall use the
product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and
specifications, and (b) whenever customer uses the
product for automotive applications beyond NXP
Semiconductors’ specifications such use shall be solely at
customer’s own risk, and (c) customer fully indemnifies
NXP Semiconductors for any liability, damages or failed
product claims resulting from customer design and use of
the product for automotive applications beyond NXP
Semiconductors’ standard warranty and NXP
Semiconductors’ product specifications.
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Semiconductors products are sold subject to the general
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http://www.nxp.com/profile/terms, unless otherwise
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Semiconductors hereby expressly objects to applying the
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purchase of NXP Semiconductors products by customer.
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may be interpreted or construed as an offer to sell products
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implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
September 1995
14
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Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
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Printed in The Netherlands
R77/02/pp15
Date of release: September 1995