PHILIPS BFR93

DISCRETE SEMICONDUCTORS
DATA SHEET
BFR93
NPN 5 GHz wideband transistor
Product specification
Supersedes data of September 1995
File under discrete semiconductors, SC14
1997 Oct 29
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR93
FEATURES
DESCRIPTION
• Very low intermodulation distortion
NPN wideband transistor in a plastic
SOT23 package.
PNP complement: BFT93.
• High power gain
• Excellent wideband properties and
low noise up to high frequencies
due to its very high transition
frequency.
3
page
1
PINNING
PIN
APPLICATIONS
• RF wideband amplifiers and
oscillators.
2
Top view
DESCRIPTION
MSB003
Marking code: R1p.
1
base
2
emitter
3
collector
Fig.1 SOT23.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
15
V
VCEO
collector-emitter voltage
open base
−
12
V
IC
collector current (DC)
−
35
mA
Ptot
total power dissipation
Ts ≤ 95 °C
−
300
mW
Cre
feedback capacitance
IC = 2 mA; VCE = 5 V; f = 1 MHz
0.8
−
pF
fT
transition frequency
IC = 30 mA; VCE = 5 V; f = 500 MHz;
Tj = 25 °C
5
−
GHz
GUM
maximum unilateral power gain
IC = 30 mA; VCE = 5 V; f = 500 MHz;
Tamb = 25 °C
16.5
−
dB
F
noise figure
IC = 2 mA; VCE = 5 V; f = 500 MHz;
Tamb = 25 °C
1.9
−
dB
dim
intermodulation distortion
IC = 30 mA; VCE = 5 V; RL = 75 Ω;
VO = 300 mV; fp + fq − fr = 493.25 MHz;
Tamb = 25 °C
−60
−
dB
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
15
V
VCEO
collector-emitter voltage
open base
−
12
V
VEBO
emitter-base voltage
open collector
−
2
V
IC
collector current (DC)
−
35
mA
Ptot
total power dissipation
−
300
mW
Tstg
storage temperature
Ts ≤ 95 °C; note 1
−65
+150
°C
Tj
junction temperature
−
175
°C
Note
1. Ts is the temperature at the soldering point of the collector pin.
1997 Oct 29
2
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR93
THERMAL CHARACTERISTICS
SYMBOL
Rth j-s
PARAMETER
CONDITIONS
thermal resistance from junction to soldering point Ts ≤ 95 °C; note 1
VALUE
UNIT
260
K/W
Note
1. Ts is the temperature at the soldering point of the collector pin.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX. UNIT
50
ICBO
collector cut-off current
IE = 0; VCB = 10 V
−
−
hFE
DC current gain
IC = 30 mA; VCE = 5 V
40
90
−
Cc
collector capacitance
IE = ie = 0; VCB = 10 V; f = 1 MHz
−
0.7
−
pF
Ce
emitter capacitance
IC = ic = 0; VEB = 0.5 V; f = 1 MHz
−
1.8
−
pF
Cre
feedback capacitance
IC = 2 mA; VCE = 5 V; f = 1 MHz;
Tamb = 25 °C
−
0.8
−
pF
fT
transition frequency
IC = 30 mA; VCE = 5 V; f = 500 MHz
−
5
−
GHz
GUM
maximum unilateral power gain
(note 1)
IC = 30 mA; VCE = 5 V; f = 500 MHz;
Tamb = 25 °C
−
16.5
−
dB
F
noise figure (note 2)
IC = 2 mA; VCE = 5 V; f = 500 MHz;
ZS = opt.; Tamb = 25 °C
−
1.9
−
dB
dim
intermodulation distortion
note 3
−
−60
−
dB
nA
Notes
2
1. GUM is the maximum unilateral power gain, assuming S12 is zero and G UM
2. Die mounted in a SOT37 package (BFR91).
3. IC = 30 mA; VCE = 5 V; RL = 75 Ω; VSWR < 2; Tamb = 25 °C;
Vp = VO = 300 mV at fp = 495.25 MHz;
Vq = VO −6 dB at fq = 503.25 MHz;
Vr = VO −6 dB at fr = 505.25 MHz;
measured at fp + fq − fr = 493.25 MHz.
1997 Oct 29
3
S 21
= 10 log ------------------------------------------------------------- dB
2 
2

 1 – S 11   1 – S 22 
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR93
MBG246
400
handbook,
halfpage
+24 V
handbook, halfpage
L3
390 Ω
Ptot
(mW)
560 Ω
1.2 kΩ
300
240 Ω
L2
680 pF
680 pF
L1
75 Ω
input
75 Ω
output
200
680 pF
DUT
100
16 Ω
MEA454
0
0
50
100
150
200
Ts ( o C)
L2 = L3 = 5 µH Ferroxcube choke, catalogue number
3122 108 20150.
L1 = 4 turns 0.35 mm copper wire; winding pitch 1 mm; internal
diameter 4 mm.
Fig.2 Intermodulation distortion test circuit.
Fig.3 Power derating curve.
MCD087
120
MEA450
1
handbook, halfpage
handbook, halfpage
Cc
(pF)
h FE
0.8
80
0.6
0.4
40
0.2
0
0
0
10
20
IC (mA)
30
0
VCE = 5 V; Tj = 25 °C.
Fig.4
1997 Oct 29
4
8
12
16
20
VCB (V)
IE = ie = 0; f = 1 MHz; Tj = 25 °C.
DC current gain as a function of
collector current; typical values.
Fig.5
4
Collector capacitance as a function of
collector-base voltage; typical values.
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR93
MEA419
MEA449
30
6
handbook, halfpage
handbook, halfpage
fT
(GHz)
gain
(dB)
4
20
2
10
G UM
I S12 I 2
0
2
10
0
0
10
20
30
I C (mA)
40
VCE = 5 V; f = 500 MHz; Tj = 25 °C.
Fig.6
10 3
104
f (MHz)
IC = 30 mA; VCE = 5 V; Tamb = 25 °C.
Transition frequency as a function of
collector current; typical values.
Fig.7
MEA453
Gain as a function of frequency;
typical values.
MEA452
10
10
handbook, halfpage
handbook, halfpage
F
(dB)
8
F
(dB)
6
5
4
2
0
0
10
20
30
0
10 –1
40
I C (mA)
VCE = 5 V; f = 500 MHz; ZS = opt.; Tamb = 25 °C.
Fig.8
1997 Oct 29
1
f (GHz)
10
IC = 2 mA; VCE = 5 V; ZS = opt.; Tamb = 25 °C.
Minimum noise figure as a function of
collector current; typical values.
Fig.9
5
Minimum noise figure as a function of
frequency; typical values.
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR93
MEA418
60
handbook,
halfpage
B
S
(mS)
40
F = 4.5 dB
20
4
3.5
3
0
2.5
1.9
20
40
60
0
20
40
60
80
100
120
G S (mS)
IC = 2 mA; VCE = 5 V; f = 500 MHz; Tamb = 25 °C.
Fig.10 Circles of constant noise figure;
typical values.
1997 Oct 29
6
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR93
1
handbook, full pagewidth
0.5
2
0.2
5
10
1000 MHz
+j
0.2
0
0.5
–j
800 1
500
2
5
∞
10
200
10
5
0.2
2
0.5
MEA420
1
IC = 30 mA; VCE = 5 V; Zo = 50 Ω; Tamb = 25 °C.
Fig.11 Common emitter input reflection coefficient (S11); typical values.
90 o
handbook, full pagewidth
60 o
120 o
200 MHz
150 o
30 o
500
800
180 o
20
ϕ
1000
10
0o
ϕ
30 o
150 o
60 o
120 o
90 o
MEA422
IC = 30 mA; VCE = 5 V; Tamb = 25 °C.
Fig.12 Common emitter forward transmission coefficient (S21); typical values.
1997 Oct 29
7
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR93
90 o
handbook, full pagewidth
60 o
120 o
1000 MHz
150 o
30 o
800
500
200
ϕ
0.20
0.10
180 o
0o
ϕ
30 o
150 o
60 o
120 o
90 o
MEA423
IC = 30 mA; VCE = 5 V; Tamb = 25 °C.
Fig.13 Common emitter reverse transmission coefficient (S12); typical values.
1
handbook, full pagewidth
0.5
2
0.2
5
10
+j
0
0.2
0.5
1
2
5
∞
10
800
–j
500
10
1000 MHz
200
5
0.2
2
0.5
1
MEA421
IC = 30 mA; VCE = 5 V; Zo = 50 Ω; Tamb = 25 °C.
Fig.14 Common emitter output reflection coefficient (S22); typical values.
1997 Oct 29
8
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR93
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT23
D
E
B
A
X
HE
v M A
3
Q
A
A1
1
2
e1
bp
c
w M B
Lp
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max.
bp
c
D
E
e
e1
HE
Lp
Q
v
w
mm
1.1
0.9
0.1
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
1.9
0.95
2.5
2.1
0.45
0.15
0.55
0.45
0.2
0.1
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
ISSUE DATE
97-02-28
SOT23
1997 Oct 29
EUROPEAN
PROJECTION
9
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR93
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1997 Oct 29
10
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR93
NOTES
1997 Oct 29
11
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© Philips Electronics N.V. 1997
SCA55
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Printed in The Netherlands
127127/00/02/pp12
Date of release: 1997 Oct 29
Document order number:
9397 750 02765