DATA SHEET book, halfpage M3D071 BFG93A; BFG93A/X NPN 6 GHz wideband transistors Product specification Supersedes data of 1995 Sep 25 1998 Sep 23 Philips Semiconductors Product specification NPN 6 GHz wideband transistors FEATURES BFG93A; BFG93A/X PINNING • High power gain PIN • Low noise figure • Gold metallization ensures excellent reliability. APPLICATIONS Wideband applications in the UHF and microwave range. DESCRIPTION NPN transistor in a 4-pin, dual-emitter SOT143B plastic package. DESCRIPTION handbook, 2 columns 4 3 BFG93A 1 collector 2 base 3 emitter 4 emitter 1 2 Top view BFG93A/X MSB014 Fig.1 SOT143B. 1 collector 2 emitter 3 base 4 emitter MARKING TYPE NUMBER CODE BFG93A R8 BFG93A/X V15 QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VCBO collector-base voltage open emitter − − 15 V VCEO collector-emitter voltage open base − − 12 V IC collector current (DC) − − 35 mA Ptot total power dissipation Ts ≤ 85 °C − − 300 mW Cre feedback capacitance IC = ic = 0; VCB = 5 V; f = 1 MHz − 0.6 − pF fT transition frequency IC = 30 mA; VCE = 5 V; f = 500 MHz 4.5 6 − GHz GUM maximum unilateral power gain IC = 30 mA; VCE = 8 V; Tamb = 25 °C; f = 1 GHz − 16 − dB IC = 30 mA; VCE = 8 V; Tamb = 25 °C; f = 2 GHz − 10 − dB Γs = Γopt; IC = 5 mA; VCE = 8 V; Tamb = 25 °C; f = 1 GHz − 1.7 − dB F 1998 Sep 23 noise figure 2 Philips Semiconductors Product specification NPN 6 GHz wideband transistors BFG93A; BFG93A/X LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 15 V VCEO collector-emitter voltage open base − 12 V VEBO emitter-base voltage open collector − 2 V IC collector current (DC) − 35 mA Ptot total power dissipation Ts ≤ 85 °C; note 1 − 300 mW Tstg storage temperature range −65 +150 °C Tj junction operating temperature − 175 °C Note 1. Ts is the temperature at the soldering point of the collector pin. THERMAL CHARACTERISTICS SYMBOL Rth j-s PARAMETER CONDITIONS thermal resistance from junction to soldering point note 1 VALUE UNIT 290 K/W Note 1. Ts is the temperature at the soldering point of the collector pin. CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT ICBO collector leakage current IE = 0; VCB = 5 V − − 50 hFE DC current gain IC = 30 mA; VCE = 5 V 40 90 − Cc collector capacitance IE = ie = 0; VCB = 5 V; f = 1 MHz − 0.9 − pF nA Ce emitter capacitance IC = ic = 0; VEB = 5 V; f = 1 MHz − 1.9 − pF Cre feedback capacitance IC = ic = 0; VCB = 5 V; f = 1 MHz − 0.6 − pF fT transition frequency IC = 30 mA; VCE = 5 V; f = 500 MHz 4.5 6 − GHz GUM maximum unilateral power gain; note 1 IC = 30 mA; VCE = 8 V; Tamb = 25 °C; f = 1 GHz − 16 − dB IC = 30 mA; VCE = 8 V; Tamb = 25 °C; f = 2 GHz − 10 − dB Γs = Γopt; IC = 5 mA; VCE = 8 V; Tamb = 25 °C; f = 1 GHz − 1.7 − dB Γs = Γopt; IC = 5 mA; VCE = 8 V; Tamb = 25 °C; f = 2 GHz − 2.3 − dB F noise figure Note S 21 2 dB. 1. GUM is the maximum unilateral power gain, assuming S12 is zero and G UM = 10 log -------------------------------------------------------------( 1 – S 11 2 ) ( 1 – S 22 2 ) 1998 Sep 23 3 Philips Semiconductors Product specification NPN 6 GHz wideband transistors BFG93A; BFG93A/X MBG245 MCD087 120 400 handbook, halfpage handbook, halfpage P tot (mW) h FE 300 80 200 40 100 0 0 0 50 100 150 0 200 10 20 Ts ( o C) IC (mA) 30 VCE = 5 V. Fig.3 Fig.2 Power derating curve. MCD088 1.0 DC current gain as a function of collector current; typical values. MCD089 8 handbook, halfpage handbook, halfpage C re fT (GHz) (pF) 0.8 6 0.6 4 0.4 2 0.2 0 0 0 4 8 12 0 16 10 20 1998 Sep 23 40 VCE = 5 V; Tamb = 25 °C; f = 500 MHz. IC = ic = 0; f = 1 MHz. Fig.4 30 I C (mA) VCB (V) Feedback capacitance as a function of collector-base voltage; typical values. Fig.5 4 Transition frequency as a function of collector current; typical values. Philips Semiconductors Product specification NPN 6 GHz wideband transistors BFG93A; BFG93A/X MCD090 30 MCD091 30 handbook, halfpage handbook, halfpage gain gain MSG (dB) (dB) G UM 20 MSG 20 G UM 10 10 0 0 10 20 30 0 40 0 10 20 30 I C (mA) VCE = 8 V; f = 500 MHz. VCE = 8 V; f = 1 GHz. Fig.6 Fig.7 Gain as a function of collector current; typical values. MCD092 50 40 I C (mA) Gain as a function of collector current; typical values. MCD093 50 handbook, halfpage handbook, halfpage gain gain (dB) (dB) G UM 40 40 G UM MSG 30 30 MSG 20 20 G max G max 10 0 10 10 2 10 3 f (MHz) 10 10 0 4 10 10 VCE = 8 V; IC = 10 mA. VCE = 8 V; IC = 30 mA. Fig.8 Fig.9 Gain as a function of frequency; typical values. 1998 Sep 23 5 2 10 3 f (MHz) 10 4 Gain as a function of frequency; typical values. Philips Semiconductors Product specification NPN 6 GHz wideband transistors BFG93A; BFG93A/X MCD094 4 MCD095 4 handbook, halfpage handbook, halfpage F (dB) F (dB) f = 2 GHz 3 3 1 GHz 500 MHz 2 2 1 1 0 1 10 10 mA 5 mA 0 10 2 10 2 I C (mA) I C = 30 mA 10 3 f (MHz) 10 4 VCE = 8 V. VCE = 8 V. Fig.10 Minimum noise figure as a function of collector current; typical values. Fig.11 Minimum noise figure as a function of frequency; typical values. stability circle 1 handbook, full pagewidth 0.5 un re sta gio ble n 2 0.2 5 OPT –j 10 * +j F min = 1.4 dB MSG 0.2 22.2 dB 0.5 1 2 5 ∞ 10 10 2 dB 5 0.2 3 dB 4 dB 2 0.5 Zo = 50 Ω. Maximum stable gain = 22.2 dB. 1 MCD096 Fig.12 Common emitter noise figure circles; typical values. 1998 Sep 23 6 Philips Semiconductors Product specification NPN 6 GHz wideband transistors BFG93A; BFG93A/X 1 handbook, full pagewidth 0.5 2 stability circle 0.2 5 unstable region OPT * 10 F min = 2 dB +j 0 MSG 0.2 10.4 dB –j 1 0.5 2 5 ∞ 10 2.5 dB 10 5 0.2 4 dB 6 dB 2 0.5 MCD097 1 Zo = 50 Ω. Maximum stable gain = 10.4 dB. Fig.13 Common emitter noise figure circles; typical values. 1 handbook, full pagewidth 0.5 2 5 dB 0.2 5 4 dB 3.5 dB 10 +j OPT 0.2 –j 0.2 * 0.5 F min = 3 dB 1 2 5 ∞ 10 10 * G max = 9 dB 5 8 dB 7 dB 2 0.5 1 MCD098 Zo = 50 Ω. Fig.14 Common emitter noise figure circles; typical values. 1998 Sep 23 7 Philips Semiconductors Product specification NPN 6 GHz wideband transistors BFG93A; BFG93A/X 1 handbook, full pagewidth 0.5 2 3 GHz 0.2 5 10 +j 0.2 0 0.5 1 2 5 10 ∞ –j 10 40 MHz 5 0.2 2 0.5 1 MCD099 VCE = 8 V; IC = 30 mA; Zo = 50 Ω. Fig.15 Common emitter input reflection coefficient (S11). 90 o handbook, full pagewidth 45 o 135 o 40 MHz 180 o 50 40 20 10 0o 3 GHz _ VCE = 8 V; IC = 30 mA; Rmax = 50 Ω. 30 _ 45 o 135 o _ 90 o MCD100 Fig.16 Common emitter forward transmission coefficient (S21). 1998 Sep 23 8 Philips Semiconductors Product specification NPN 6 GHz wideband transistors BFG93A; BFG93A/X 90 o handbook, full pagewidth 135 o 45 o 3 GHz 40 MHz 180 o 0.04 0.08 0.12 0.16 0.20 0o _ 45 o _ 135 o _ 90 o VCE = 8 V; IC = 30 mA; Rmax = 0.2 Ω. MCD102 Fig.17 Common emitter reverse transmission coefficient (S12). 1 handbook, full pagewidth 0.5 2 0.2 5 10 +j 0 0.2 0.5 1 2 5 10 ∞ –j 10 40 MHz 3 GHz 5 0.2 2 0.5 1 MCD101 VCE = 10 V; IC = 15 mA; Zo = 50 Ω. Fig.18 Common emitter output reflection coefficient (S22). 1998 Sep 23 9 Philips Semiconductors Product specification NPN 6 GHz wideband transistors BFG93A; BFG93A/X SPICE parameters for BFR91A(/X) die SEQUENCE No. PARAMETER VALUE SEQUENCE No. UNIT PARAMETER VALUE UNIT 1 IS 1.328 fA 36 (note 1) VJS 750.0 mV 2 BF 102.0 − 37 (note 1) MJS 0.000 − 3 NF 1.000 − 38 FC 800.0 m 4 VAF 51.90 V Note 5 IKF 8.155 A 6 ISE 13.90 fA 1. These parameters have not been extracted, the default values are shown. 7 NE 15.12 − 8 BR 17.69 − 9 NR 994.0 m 10 VAR 3.280 V 11 IKR 10.00 A 12 ISC 1.043 aA 13 NC 1.189 − 14 RB 10.00 Ω 15 IRB 1.000 µA 16 RBM 10.00 Ω 17 RE 763.6 mΩ 18 RC 9.000 Ω 19 (note 1) XTB 0.000 − 20 (note 1) EG 1.110 EV 21 (note 1) XTI 3.000 − 22 CJE 2.032 pF 23 VJE 600.0 mV 24 MJE 290.0 m 25 TF 6.557 ps 26 XTF 38.97 − 27 VTF 10.93 V 28 ITF 521.0 mA Cbe 84 fF 29 PTF 0.000 deg Ccb 17 fF 30 CJC 1.003 pF Cce 191 fF 31 VJC 340.8 mV L1 0.12 nH 32 MJC 194.2 m L2 0.21 nH 33 XCJC 120.0 m L3 0.06 nH 34 TR 3.073 ns LB 0.95 nH 35 (note 1) CJS 0.000 F LE 0.40 nH 1998 Sep 23 C cb handbook, halfpage L1 LB B L2 B' C' C E' C be Cce LE MBC964 L3 E QLB = 50; QLE = 50. QLB,E (f) = QLB,E √ (f/fc). fc = scaling frequency = 1000 MHz. Fig.19 Package equivalent circuit SOT143B. List of components (see Fig.19) DESIGNATION 10 VALUE UNIT Philips Semiconductors Product specification NPN 6 GHz wideband transistors BFG93A; BFG93A/X PACKAGE OUTLINES Plastic surface mounted package; 4 leads SOT143B D B E A X y HE v M A e bp w M B 4 3 Q A A1 c 1 2 Lp b1 e1 detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp b1 c D E e e1 HE Lp Q v w y mm 1.1 0.9 0.1 0.48 0.38 0.88 0.78 0.15 0.09 3.0 2.8 1.4 1.2 1.9 1.7 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.1 0.1 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 97-02-28 SOT143B 1998 Sep 23 EUROPEAN PROJECTION 11 Philips Semiconductors Product specification NPN 6 GHz wideband transistors BFG93A; BFG93A/X DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1998 Sep 23 12 Philips Semiconductors Product specification NPN 6 GHz wideband transistors BFG93A; BFG93A/X NOTES 1998 Sep 23 13 Philips Semiconductors Product specification NPN 6 GHz wideband transistors BFG93A; BFG93A/X NOTES 1998 Sep 23 14 Philips Semiconductors Product specification NPN 6 GHz wideband transistors BFG93A; BFG93A/X NOTES 1998 Sep 23 15 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 125104/00/04/pp16 Date of release: 1998 Sep 23 Document order number: 9397 750 04351