DISCRETE SEMICONDUCTORS DATA SHEET BFG541 NPN 9 GHz wideband transistor Product specification September 1995 NXP Semiconductors Product specification NPN 9 GHz wideband transistor FEATURES BFG541 PINNING High power gain PIN Low noise figure 1 emitter High transition frequency 2 base Gold metallization ensures excellent reliability. 3 emitter 4 collector DESCRIPTION 4 lfpage DESCRIPTION NPN silicon planar epitaxial transistor, intended for wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT, etc.), radar detectors, satellite TV tuners (SATV), MATV/CATV amplifiers and repeater amplifiers in fibre-optic systems. 1 Fig.1 SOT223. The transistors are mounted in a plastic SOT223 envelope. September 1995 2 Top view 2 3 MSB002 - 1 NXP Semiconductors Product specification NPN 9 GHz wideband transistor BFG541 QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VCBO collector-base voltage open emitter 20 V VCES collector-emitter voltage RBE = 0 15 V IC DC collector current 120 mA mW Ptot total power dissipation up to Ts = 140 C; note 1 650 hFE DC current gain IC = 40 mA; VCE = 8 V; Tj = 25 C 60 120 250 Cre feedback capacitance IC = 0; VCB = 8 V; f = 1 MHz 0.7 pF fT transition frequency IC = 40 mA; VCE = 8 V; f = 1 GHz; Tamb = 25 C 9 GHz GUM maximum unilateral power gain IC = 40 mA; VCE = 8 V; f = 900 MHz; Tamb = 25 C 15 dB IC = 40 mA; VCE = 8 V; f = 2 GHz; Tamb = 25 C 9 dB S212 insertion power gain IC = 40 mA; VCE = 8 V; f = 900 MHz; Tamb = 25 C 13 14 dB F noise figure s = opt; IC = 10 mA; VCE = 8 V; f = 900 MHz; Tamb = 25 C 1.3 1.8 dB PL1 output power at 1 dB gain compression IC = 40 mA; VCE = 8 V; RL = 50 f = 900 MHz; Tamb = 25 C 21 dBm ITO third order intercept point IC = 40 mA; VCE = 8 V; RL = 50 f = 900 MHz; Tamb = 25 C 34 dBm LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter 20 V VCES collector-emitter voltage RBE = 0 15 V VEBO emitter-base voltage open collector 2.5 V IC DC collector current 120 mA Ptot total power dissipation up to Ts = 140 C; note 1 650 mW Tstg storage temperature 65 150 C Tj junction temperature 175 C THERMAL RESISTANCE SYMBOL Rth j-s PARAMETER thermal resistance from junction to soldering point CONDITIONS up to Ts = 140 C; note 1 Note 1. Ts is the temperature at the soldering point of the collector tab. September 1995 3 THERMAL RESISTANCE 55 K/W NXP Semiconductors Product specification NPN 9 GHz wideband transistor BFG541 CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT ICBO collector cut-off current IE = 0; VCB = 8 V 50 hFE DC current gain IC = 40 mA; VCE = 8 V 60 120 250 Ce emitter capacitance IC = ic = 0; VEB = 0.5 V; f = 1 MHz 2 pF nA Cc collector capacitance IE = ie = 0; VCB = 8 V; f = 1 MHz 1 pF Cre feedback capacitance IC = 0; VCB = 8 V; f = 1 MHz 0.7 pF fT transition frequency IC = 40 mA; VCE = 8 V; f = 1 GHz; Tamb = 25 C 9 GHz GUM maximum unilateral power gain (note 1) IC = 40 mA; VCE = 8 V; f = 900 MHz; Tamb = 25 C 15 dB IC = 40 mA; VCE = 8 V; f = 2 GHz; Tamb = 25 C 9 dB S212 insertion power gain Ic = 40 mA; VCE = 8 V; f = 900 MHz; Tamb = 25 C 13 14 dB F noise figure s = opt; IC = 10 mA; VCE = 8 V; f = 900 MHz; Tamb = 25 C 1.3 1.8 dB s = opt; IC = 40 mA; VCE = 8 V; f = 900 MHz; Tamb = 25 C 1.9 2.4 dB s = opt; IC = 10 mA; VCE = 8 V; f = 2 GHz; Tamb = 25 C 2.1 dB PL1 output power at 1 dB gain compression Ic = 40 mA; VCE = 8 V; RL = 50 f = 900 MHz; Tamb = 25 C 21 dBm ITO third order intercept point note 2 34 dBm Vo output voltage note 3 500 mV d2 second order intermodulation distortion note 4 50 dB Notes 1. GUM is the maximum unilateral power gain, assuming S12 is zero and 2 G UM 2. S 21 - dB. = 10 log --------------------------------------------------------2 2 1 – S 11 1 – S 22 IC = 40 mA; VCE = 8 V; RL = 50 ; f = 900 MHz; Tamb = 25 C; fp = 900 MHz; fq = 902 MHz; measured at f(2pq) = 898 MHz and at f(2pq) = 904 MHz. 3. dim = 60 dB (DIN 45004B); IC = 40 mA; VCE = 8 V; ZL = Zs = 75 ; Tamb = 25 C; Vp = Vo; Vq = Vo 6 dB; Vr = Vo 6 dB; fp = 795.25 MHz; fq = 803.25 MHz; fr = 805.25 MHz; measured at f(pqr) = 793.25 MHz 4. IC = 40 mA; VCE = 8 V; Vo = 325 mV; Tamb = 25 C; fp = 250 MHz; fq = 560 MHz; measured at f(pq) = 810 MHz September 1995 4 NXP Semiconductors Product specification NPN 9 GHz wideband transistor BFG541 MRA654 - 1 1000 Ptot MRA655 250 handbook, halfpage handbook, halfpage hFE (mW) 800 200 600 150 400 100 200 50 0 10−2 0 0 50 100 150 200 10−1 1 102 10 IC (mA) T ( o C) s VCE 10 V. VCE = 8 V; Tj = 25 C. Fig.2 Power derating curve. Fig.3 MRA656 1.0 DC current gain as a function of collector current. MRA657 12 handbook, halfpage handbook, halfpage Cre (pF) fT (GHz) 0.8 VCE = 8 V 8 4V 0.6 0.4 4 0.2 0 10−1 0 0 4 8 VCB (V) 12 IC = 0; f = 1 MHz. f = 1 GHz; Tamb = 25 C. Fig.4 Fig.5 Feedback capacitance as a function of collector-base voltage. September 1995 5 1 10 IC (mA) 102 Transition frequency as a function of collector current. NXP Semiconductors Product specification NPN 9 GHz wideband transistor BFG541 In Figs 6 to 9, GUM = maximum power gain; MSG = maximum stable gain; Gmax = maximum available gain. MRA658 25 MRA659 25 handbook, halfpage handbook, halfpage gain (dB) gain (dB) 20 20 Gmax MSG 15 15 GUM 10 Gmax 10 GUM 5 5 0 0 20 40 0 80 60 0 IC (mA) 20 40 80 60 IC (mA) VCE = 8 V; f = 900 MHz. VCE = 8 V; f = 2 GHz. Fig.7 Gain as a function of collector current. Fig.6 Gain as a function of collector current. MRA660 50 MRA661 50 handbook, halfpage handbook, halfpage gain (dB) gain (dB) 40 40 GUM MSG GUM 30 30 MSG 20 20 Gmax Gmax 10 10 0 10 102 103 f (MHz) 0 10 104 IC = 10 mA; VCE = 8 V. 103 f (MHz) 104 IC = 40 mA; VCE = 8 V. Fig.8 Gain as a function of frequency. September 1995 102 Fig.9 Gain as a function of frequency. 6 NXP Semiconductors Product specification NPN 9 GHz wideband transistor BFG541 MEA977 MEA976 –20 –20 handbook, halfpage handbook, halfpage d im (dB) –30 d2 (dB) –30 –40 –40 –50 –50 –60 –60 –70 20 10 30 40 –70 50 60 I C (mA) Fig.10 Intermodulation distortion as a function of collector current. MRA666 5 handbook, halfpage Fmin 4 30 20 Gass 2000 MHz 2 C =10 mA Fmin 4 10 3 5 2 20 Gass (dB) 15 (dB) Gass 10 0 IC (mA) Fmin 1 10 mA 0 10 5 40 mA 1000 MHz 900 MHz 500 MHz 1 40 mA 2000 MHz Fmin 1 50 60 I C (mA) MRA667 5 handbook, halfpageI 1000 MHz 3 40 Fig.11 Second order intermodulation distortion as a function of collector current. Gass (dB) f = 900 MHz 15 (dB) 20 10 −5 100 0 102 0 103 f (MHz) −5 104 VCE = 8 V. VCE = 8 V. Fig.12 Minimum noise figure and associated available gain as functions of collector current. Fig.13 Minimum noise figure and associated available gain as functions of frequency. September 1995 7 NXP Semiconductors Product specification NPN 9 GHz wideband transistor BFG541 90° handbook, full pagewidth 1.0 1 135° 0.8 45° 2 0.5 0.6 G = 13 dB 0.2 G = 14 dB G = 15 dB Γ0.2 MS 180° 0 Gmax = 15.3 dB Fmin = 1.3 dB ΓOPT 0.5 1 0.4 5 0.2 2 5 0° 0 F = 1.5 dB 0.2 5 F = 2 dB F = 3 dB 0.5 2 −135° −45° 1 MRA668 1.0 −90° IC = 10 mA; VCE = 8 V; Zo = 50 ; f = 900 MHz. Fig.14 Noise circle figure. 90° handbook, full pagewidth 1.0 1 135° 0.8 45° 2 0.5 G = 7 dB G = 6 dB ΓMS G = 8 dB Gmax = 8.5 dB 0.6 0.2 0.4 5 0.2 180° 0.2 0 0.5 1 2 5 0° 0 ΓOPT 0.2 Fmin = 2.1 dB 5 F = 2.5 dB F = 3 dB 0.5 F = 4 dB −135° 2 −45° 1 MRA669 −90° IC = 10 mA; VCE = 8 V; Zo = 50 ; f = 2 GHz. Fig.15 Noise circle figure. September 1995 8 1.0 NXP Semiconductors Product specification NPN 9 GHz wideband transistor BFG541 90° handbook, full pagewidth 1.0 1 135° 0.8 45° 2 0.5 0.6 3 GHz 0.2 0.4 5 0.2 180° 0.2 0 0.5 1 2 5 0° 40 MHz 0.2 0.5 5 2 −135° 0 −45° 1 MRA662 −90° IC = 40 mA; VCE = 8 V. Zo = 50 . Fig.16 Common emitter input reflection coefficient (S11). 90° handbook, full pagewidth 45° 135° 40 MHz 180° 3 GHz 50 40 30 20 0° 10 −135° −45° −90° MRA663 IC = 40 mA; VCE = 8 V. Fig.17 Common emitter forward transmission coefficient (S21). September 1995 9 1.0 NXP Semiconductors Product specification NPN 9 GHz wideband transistor BFG541 90° handbook, full pagewidth 135° 45° 3 GHz 0.5 0.4 0.3 0.2 0.1 40 MHz 180° 0° −135° −45° −90° MRA664 IC = 40 mA; VCE = 8 V. Fig.18 Common emitter reverse transmission coefficient (S12). 90° handbook, full pagewidth 1.0 1 135° 0.8 45° 2 0.5 0.6 0.2 0.4 5 0.2 3 GHz 180° 0.2 0 0.5 1 2 5 0° 0 5 0.2 40 MHz 0.5 2 −135° −45° 1 MRA665 IC = 40 mA; VCE = 8 V. Zo = 50 . −90° Fig.19 Common emitter output reflection coefficient (S22). September 1995 10 1.0 NXP Semiconductors Product specification NPN 9 GHz wideband transistor BFG541 PACKAGE OUTLINE Plastic surface-mounted package with increased heatsink; 4 leads D SOT223 E B A X c y HE v M A b1 4 Q A A1 1 2 3 Lp bp e1 w M B detail X e 0 2 4 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 bp b1 c D E e e1 HE Lp Q v w y mm 1.8 1.5 0.10 0.01 0.80 0.60 3.1 2.9 0.32 0.22 6.7 6.3 3.7 3.3 4.6 2.3 7.3 6.7 1.1 0.7 0.95 0.85 0.2 0.1 0.1 OUTLINE VERSION SOT223 September 1995 REFERENCES IEC JEDEC JEITA SC-73 11 EUROPEAN PROJECTION ISSUE DATE 04-11-10 06-03-16 NXP Semiconductors Product specification NPN 9 GHz wideband transistor BFG541 DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. Right to make changes NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. DEFINITIONS Product specification The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet. Suitability for use NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. DISCLAIMERS Limited warranty and liability Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Applications Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. September 1995 12 NXP Semiconductors Product specification NPN 9 GHz wideband transistor BFG541 Export control This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Quick reference data The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Non-automotive qualified products Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. Limiting values Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications. Terms and conditions of commercial sale NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. No offer to sell or license Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. September 1995 13 NXP Semiconductors provides High Performance Mixed Signal and Standard Product solutions that leverage its leading RF, Analog, Power Management, Interface, Security and Digital Processing expertise Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: [email protected] © NXP B.V. 2010 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands R77/03/pp14 Date of release: September 1995