DISCRETE SEMICONDUCTORS DATA SHEET M3D173 BFR93AT NPN 5 GHz wideband transistor Product specification Supersedes data of 1999 Nov 02 2000 Mar 09 Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR93AT FEATURES DESCRIPTION • High power gain Silicon NPN transistor encapsulated in a plastic SOT416 (SC-75) package. The BFR93AT uses the same die as the SOT23 version: BFR93A. • Gold metallization ensures excellent reliability • SOT416 (SC-75) package. 3 fpage 1 PINNING APPLICATIONS Designed for use in RF amplifiers, mixers and oscillators with signal frequencies up to 1 GHz. 2 Top view PIN MBK090 DESCRIPTION Marking code: R2. 1 base 2 emitter 3 collector Fig.1 SOT416. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VCBO collector-base voltage open emitter − − 15 V VCEO collector-emitter voltage open base − − 12 V IC collector current (DC) − − 35 mA Ptot total power dissipation Ts ≤ 75 °C; note 1 − − 150 mW hFE DC current gain IC = 30 mA; VCE = 5 V 40 90 − Cre feedback capacitance IC = 0; VCE = 5 V; f = 1 MHz; Tamb = 25 °C − 0.6 − pF fT transition frequency IC = 30 mA; VCE = 5 V; f = 500 MHz 4 5 − GHz GUM maximum unilateral power gain IC = 30 mA; VCE = 8 V; Tamb = 25 °C; f = 1 GHz − 13 − dB f = 2 GHz − 8 − dB − 1.5 − dB − − 150 °C F noise figure Tj junction temperature IC = 5 mA; VCE = 8 V; f = 1 GHz; Γs = Γopt Note 1. Ts is the temperature at the soldering point of the collector pin. 2000 Mar 09 2 Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR93AT LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITION MIN. MAX. UNIT VCBO collector-base voltage open emitter − 15 V VCEO collector-emitter voltage open base − 12 V VEBO emitter-base voltage open collector − 2 V IC DC collector current − 35 mA Ptot total power dissipation − 150 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Ts ≤ 75 °C; see Fig.2 THERMAL CHARACTERISTICS SYMBOL PARAMETER thermal resistance from junction to soldering point Rth j-s MGU068 200 Ptot (mW) 150 100 50 0 0 50 100 150 200 Ts (°C) Fig.2 Power derating curve. 2000 Mar 09 3 VALUE UNIT 500 K/W Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR93AT CHARACTERISTICS Tj = 25 °C; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. ICBO collector cut-off current IE = 0; VCB = 5 V − − 50 hFE DC current gain IC = 30 mA; VCE = 5 V 40 90 − Cc collector capacitance IE = ie = 0; VCB = 5 V; f = 1 MHz − 0.7 − UNIT nA pF Ce emitter capacitance IC = ic = 0; VEB = 0.5 V; f = 1 MHz − 2.3 − pF Cre feedback capacitance IC = 0; VCE = 5 V; f = 1 MHz − 0.6 − pF fT transition frequency IC = 30 mA; VCE = 5 V; f = 500 MHz 4 5 − GHz GUM maximum unilateral power gain IC = 30 mA; VCE = 8 V; Tamb = 25 °C; note 1; f = 1 GHz − 13 − dB f = 2 GHz − 8 − dB f = 1 GHz − 1.5 − dB f = 2 GHz − 2.1 − dB F noise figure IC = 5 mA; VCE = 8 V; Γs = Γopt; Note S 21 2 1. GUM is the maximum unilateral power gain, assuming s12 is zero and G UM = 10 log ---------------------------------------------------------- dB ( 1 – S 11 2 ) ( 1 – S 22 2 ) 2000 Mar 09 4 Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR93AT MCD087 120 MBG203 1 handbook, halfpage Cre (pF) h FE 0.8 80 0.6 0.4 40 0.2 0 0 0 10 20 0 30 IC (mA) 4 VCE = 5 V. IC = 0; f = 1 MHz. Fig.3 Fig.4 DC current gain as a function of collector current; typical values. MBG204 6 fT (GHz) 4 2 0 1 10 IC (mA) 10 2 VCE = 5 V; f = 500 MHz; Tamb = 25 °C. Fig.5 Transition frequency as a function of collector current; typical values. 2000 Mar 09 5 8 12 VCB (V) 16 Feedback capacitance as a function of collector-base voltage; typical values. Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR93AT MBG202 30 MBG201 30 gain (dB) gain (dB) MSG 20 20 GUM MSG 10 0 GUM 10 0 10 20 IC (mA) 0 30 0 10 VCE = 8 V; f = 500 MHz. VCE = 8 V; f = 1 GHz. Fig.6 Fig.7 Gain as a function of collector current; typical values. MBG200 50 40 30 IC (mA) 30 Gain as a function of collector current; typical values. MBG207 50 handbook, halfpage handbook, halfpage gain (dB) 20 gain (dB) GUM GUM 40 30 MSG MSG 20 20 10 10 Gmax Gmax 0 0 10 10 2 10 3 f (MHz) 10 4 10 VCE = 8 V; IC = 10 mA. VCE = 8 V; IC = 30 mA. Fig.8 Fig.9 Gain as a function of frequency; typical values. 2000 Mar 09 6 102 103 f (MHz) 104 Gain as a function of frequency; typical values. Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR93AT MGC901 6 MGC900 6 handbook, halfpage handbook, halfpage F (dB) F (dB) 4 4 f = 2 GHz IC = 30 mA 1 GHz 10 mA 500 MHz 2 0 1 10 0 10 2 10 2 IC (mA) 5 mA 2 10 3 f (MHz) 10 4 VCE = 8 V. VCE = 8 V. Fig.10 Minimum noise figure as a function of collector current; typical values. Fig.11 Minimum noise figure as a function of collector current; typical values. 90 o 1.0 handbook, full pagewidth 1 135 o 45 o 2 0.5 0.8 0.6 0.2 180 o 0.2 0 0.5 1 0.2 2 5 F = 2 dB 0.2 0.4 5 F min = 1.4 dB Γ opt 0o 0 5 F = 3 dB F = 4 dB 0.5 135 o 2 45 o 1 MGC879 90 o f = 500 MHz; VCE = 8 V; IC = 10 mA; Zo = 50 Ω. Fig.12 Common emitter noise figure circles; typical values. 2000 Mar 09 7 1.0 Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR93AT 90 o handbook, full pagewidth 1.0 1 135 o 45 o 2 0.5 0.8 0.6 0.2 G max = 13.8 dB Γ ms 180 o F min = 2 dB Γ opt 0.5 1 0.2 0 0.4 5 0.2 2 5 0o 0 G = 13 dB F = 2.5 dB 0.2 G = 12 dB 5 F = 3 dB G = 11 dB F = 4 dB 0.5 2 135 o 45 o 1 MGC880 1.0 90 o f = 1 GHz; VCE = 8 V; IC = 10 mA; Zo = 50 Ω. Fig.13 Common emitter noise figure circles; typical values. 90 o handbook, full pagewidth 1.0 1 135 o 45 o 2 0.5 0.8 0.6 (4) 0.2 0.4 5 0.2 (3) 180 o (2) 0.5 0.2 0 (5) (1) Γopt; Fmin = 3 dB. (2) F = 3.5 dB. (3) F = 4 dB. (4) F = 5 dB. (5) Γms; Gmax = 8.1 dB. (6) G = 7 dB. (7) G = 6 dB. (8) G = 5 dB. f = 2 GHz; VCE = 8 V; IC = 10 mA; Zo = 50 Ω. 1 2 5 0o (1) 5 0.2 (6) (7) (8) 0.5 2 135 o 45 o 1 MGC881 90 o Fig.14 Common emitter noise figure circles; typical values. 2000 Mar 09 0 8 1.0 Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR93AT 90 o handbook, full pagewidth 1.0 1 135 o 45 o 2 0.5 0.8 0.6 0.2 0.4 5 3 GHz 0.2 180 o 0.2 0 0.5 1 2 5 0o 0 40 MHz 5 0.2 0.5 2 135 o 45 o 1 MGC878 1.0 90 o VCE = 8 V; IC = 30 mA; Zo = 50 Ω. Fig.15 Common emitter input reflection coefficient (S11); typical values. 90 o handbook, full pagewidth 135 o 180 o 45 o 3 GHz 40 MHz 50 40 30 20 0o 10 135 o 45 o 90 o MGC898 VCE = 8 V; IC = 30 mA. Fig.16 Common emitter forward transmission coefficient (S21); typical values. 2000 Mar 09 9 Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR93AT 90 o handbook, full pagewidth 135 o 45 o 3 GHz 180 o 40 MHz 0.5 0.4 0.3 0.2 0o 0.1 135 o 45 o 90 o MGC899 VCE = 8 V; IC = 30 mA. Fig.17 Common emitter reverse transmission coefficient (S12); typical values. 90 o 1.0 handbook, full pagewidth 1 135 o 45 o 2 0.5 0.8 0.6 0.2 0.4 5 0.2 180 o 0.2 0 0.5 1 2 5 0o 0 40 MHz 3 GHz 0.2 0.5 5 2 135 o 45 o 1 MGC877 1.0 90 o VCE = 8 V; IC = 30 mA; Zo = 50 Ω. Fig.18 Common emitter output reflection coefficient (S22); typical values. 2000 Mar 09 10 Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR93AT PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT416 D E B A X HE v M A 3 Q A 1 A1 2 e1 c bp w M B Lp e detail X 0 0.5 1 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp c D E e e1 HE Lp Q v w mm 0.95 0.60 0.1 0.30 0.15 0.25 0.10 1.8 1.4 0.9 0.7 1 0.5 1.75 1.45 0.45 0.15 0.23 0.13 0.2 0.2 OUTLINE VERSION SOT416 2000 Mar 09 REFERENCES IEC JEDEC EIAJ SC-75 11 EUROPEAN PROJECTION ISSUE DATE 97-02-28 Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR93AT DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 2000 Mar 09 12 Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR93AT NOTES 2000 Mar 09 13 Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR93AT NOTES 2000 Mar 09 14 Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR93AT NOTES 2000 Mar 09 15 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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