Data Sheet

DISCRETE SEMICONDUCTORS
DATA SHEET
BFR106
NPN 5 GHz wideband transistor
Product specification
September 1995
NXP Semiconductors
Product specification
NPN 5 GHz wideband transistor
DESCRIPTION
BFR106
PINNING
NPN silicon planar epitaxial transistor
in a plastic SOT23 envelope. It is
primarily intended for low noise,
general RF applications.
PIN
DESCRIPTION
1
base
2
emitter
3
collector
3
lfpage
Code: R7p
1
2
Top view
MSB003
Fig.1 SOT23.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VCBO
collector-base voltage
open emitter


20
V
VCEO
collector-emitter voltage
open base


15
V
IC
DC collector current


100
mA
Ptot
total power dissipation
up to Ts = 70 C; note 1


500
mW
hFE
DC current gain
IC = 50 mA; VCE = 9 V; Tamb = 25 C
25
80

fT
transition frequency
IC = 50 mA; VCE = 9 V; f = 500 MHz;
Tamb = 25 C

5

GHz
GUM
maximum unilateral power gain
IC = 30 mA; VCE = 6 V; f = 800 MHz;
Tamb = 25 C

11.5

dB
Vo
output voltage
IC = 50 mA; VCE = 9 V; RL = 75 ;
Tamb = 25 C; dim = 60 dB;
f(pqr) = 793.25 MHz

350

mV
MAX.
UNIT
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
VCBO
collector-base voltage
open emitter

20
V
VCEO
collector-emitter voltage
open base

15
V
VEBO
emitter-base voltage
open collector

3
V
IC
DC collector current

100
mA
Ptot
total power dissipation

500
mW
Tstg
storage temperature
65
150
C
Tj
junction temperature

175
C
up to Ts = 70 C; note 1
Note
1. Ts is the temperature at the soldering point of the collector tab.
September 1995
2
NXP Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR106
THERMAL RESISTANCE
SYMBOL
Rth j-s
PARAMETER
CONDITIONS
thermal resistance from junction to
soldering point
THERMAL RESISTANCE
up to Ts = 70 C; note 1
210 K/W
Note
1. Ts is the temperature at the soldering point of the collector tab.
CHARACTERISTICS
Tj = 25 C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
ICBO
collector cut-off current
IE = 0; VCB = 10 V


100
hFE
DC current gain
IC = 50 mA; VCE = 9 V
25
80

fT
transition frequency
IC = 50 mA; VCE = 9 V; f = 500 MHz;
Tamb = 25 C

5

GHz
nA
Cc
collector capacitance
IE = ie = 0; VCB = 10 V; f = 1 MHz

1.5

pF
Ce
emitter capacitance
IC = ic = 0; VEB = 0.5 V; f = 1 MHz

4.5

pF
Cre
feedback capacitance
IC = 0; VCE = 10 V; f = 1 MHz

1.2

pF
GUM
maximum unilateral power gain
(note 1)
IC = 30 mA; VCE = 6 V; f = 800 MHz;
Tamb = 25 C

11.5

dB
F
noise figure
IC = 30 mA; VCE = 6 V; f = 800 MHz;
Tamb = 25 C

3.5

dB
d2
second order intermodulation
distortion
note 2

50

dB
Vo
output voltage
note 3

350

mV
Notes
1. GUM is the maximum unilateral power gain, assuming S12 is zero and
2
S 21
- dB.
G UM = 10 log --------------------------------------------------------2
2
 1 – S 11   1 – S 22 
2. IC = 30 mA; VCE = 6 V; RL = 75 ; Tamb = 25 C;
f(pq) = 810 MHz; Vo = 100 mV.
3. dim = 60 dB (DIN 45004B); IC = 50 mA; VCE = 9 V; RL = 75 ; Tamb = 25 C; f(pqr) = 793.25 MHz.
September 1995
3
NXP Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR106
MBB774
MEA398 - 1
600
1/2 page (Datasheet)
120
handbook, halfpage
22 mm
P tot
h FE
(mW)
400
80
200
40
0
0
0
50
150
100
Ts
0
200
( o C)
40
80
120
I C (mA)
VCE = 9 V; Tamb = 25 C.
Fig.2 Power derating curve.
Fig.3
DC current gain as a function of collector
current.
MBB773
8
MEA399
40
handbook, halfpage
handbook, halfpage
fT
G UM
(GHz)
(dB)
6
30
4
20
2
10
0
0
40
80
I C (mA)
0
120
10
VCE = 9 V; f = 500 MHz; Tj = 25 C.
Fig.4
2
103
f (MHz)
10
IC = 30 mA; VCE = 6 V; Tamb = 25 C.
Fig.5
Transition frequency as a function of
collector current.
September 1995
10
4
Maximum unilateral power gain as a
function of frequency.
4
NXP Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR106
1
handbook, full pagewidth
0.5
2
0.2
2000 MHz
1200
1000
+j
0.2
0
–j
5
1500
10
800
0.5
500
1
2
5
10
∞
200
10
100
0.2
5
40 MHz
2
0.5
MEA400
1
IC = 30 mA; VCE = 6 V; Tamb = 25 C.
Zo = 50 .
Fig.6 Common emitter input reflection coefficient (S11).
90°
handbook, full pagewidth
120°
150°
60°
30°
40 MHz
100
200
180°
50
40
30
20
10
500
800
1000
1200
1500
+ϕ
0°
2000 MHz
−ϕ
30°
150°
60°
120°
90°
MEA403
IC = 30 mA; VCE = 6 V; Tamb = 25 C.
Fig.7 Common emitter forward transmission coefficient (S21).
September 1995
5
NXP Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR106
90°
handbook, full pagewidth
120°
60°
2000 MHz
150°
30°
1500
1200
1000
800
0.5
180°
0.4
0.3
0.2
0.1
500
200
+ϕ
100
40 MHz
0°
−ϕ
30°
150°
60°
120°
MEA402
90°
IC = 30 mA; VCE = 6 V; Tamb = 25 C.
Fig.8 Common emitter reverse transmission coefficient (S12).
1
handbook, full pagewidth
0.5
2
0.2
5
+j
0
0.2
–j
10
800 MHz
0.5
1
2
5
10
∞
500
10
200
5
0.2
100
2
0.5
IC = 30 mA; VCE = 6 V; Tamb = 25 C.
Zo = 50 .
40 MHz
1
MEA401
Fig.9 Common emitter output reflection coefficient (S22).
September 1995
6
NXP Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR106
PACKAGE OUTLINE
Plastic surface-mounted package; 3 leads
SOT23
D
E
B
A
X
HE
v M A
3
Q
A
A1
1
2
e1
bp
c
w M B
Lp
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max.
bp
c
D
E
e
e1
HE
Lp
Q
v
w
mm
1.1
0.9
0.1
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
1.9
0.95
2.5
2.1
0.45
0.15
0.55
0.45
0.2
0.1
OUTLINE
VERSION
SOT23
September 1995
REFERENCES
IEC
JEDEC
JEITA
EUROPEAN
PROJECTION
ISSUE DATE
04-11-04
06-03-16
TO-236AB
7
NXP Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR106
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Qualification
This document contains data from the preliminary specification.
Product data sheet
Production
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
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reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
DEFINITIONS
Product specification  The information and data
provided in a Product data sheet shall define the
specification of the product as agreed between NXP
Semiconductors and its customer, unless NXP
Semiconductors and customer have explicitly agreed
otherwise in writing. In no event however, shall an
agreement be valid in which the NXP Semiconductors
product is deemed to offer functions and qualities beyond
those described in the Product data sheet.
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not designed, authorized or warranted to be suitable for
use in life support, life-critical or safety-critical systems or
equipment, nor in applications where failure or malfunction
of an NXP Semiconductors product can reasonably be
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accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at
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DISCLAIMERS
Limited warranty and liability  Information in this
document is believed to be accurate and reliable.
However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to
the accuracy or completeness of such information and
shall have no liability for the consequences of use of such
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any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
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specified use without further testing or modification.
In no event shall NXP Semiconductors be liable for any
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Semiconductors products, and NXP Semiconductors
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Semiconductors product is suitable and fit for the
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associated with their applications and products.
Notwithstanding any damages that customer might incur
for any reason whatsoever, NXP Semiconductors’
aggregate and cumulative liability towards customer for
the products described herein shall be limited in
accordance with the Terms and conditions of commercial
sale of NXP Semiconductors.
September 1995
8
NXP Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR106
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described herein may be subject to export control
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NXP Semiconductors does not accept any liability related
to any default, damage, costs or problem which is based
on any weakness or default in the customer’s applications
or products, or the application or use by customer’s third
party customer(s). Customer is responsible for doing all
necessary testing for the customer’s applications and
products using NXP Semiconductors products in order to
avoid a default of the applications and the products or of
the application or use by customer’s third party
customer(s). NXP does not accept any liability in this
respect.
Quick reference data  The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Non-automotive qualified products  Unless this data
sheet expressly states that this specific NXP
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product is not suitable for automotive use. It is neither
qualified nor tested in accordance with automotive testing
or application requirements. NXP Semiconductors accepts
no liability for inclusion and/or use of non-automotive
qualified products in automotive equipment or
applications.
Limiting values  Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) will cause permanent damage to
the device. Limiting values are stress ratings only and
(proper) operation of the device at these or any other
conditions above those given in the Recommended
operating conditions section (if present) or the
Characteristics sections of this document is not warranted.
Constant or repeated exposure to limiting values will
permanently and irreversibly affect the quality and
reliability of the device.
In the event that customer uses the product for design-in
and use in automotive applications to automotive
specifications and standards, customer (a) shall use the
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product for such automotive applications, use and
specifications, and (b) whenever customer uses the
product for automotive applications beyond NXP
Semiconductors’ specifications such use shall be solely at
customer’s own risk, and (c) customer fully indemnifies
NXP Semiconductors for any liability, damages or failed
product claims resulting from customer design and use of
the product for automotive applications beyond NXP
Semiconductors’ standard warranty and NXP
Semiconductors’ product specifications.
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Semiconductors hereby expressly objects to applying the
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September 1995
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Printed in The Netherlands
R77/02/pp10
Date of release: September 1995