DISCRETE SEMICONDUCTORS DATA SHEET BFQ19 NPN 5 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 5 GHz wideband transistor DESCRIPTION BFQ19 PINNING NPN transistor in a SOT89 plastic envelope intended for application in thick and thin-film circuits. It is primarily intended for use in UHF and microwave amplifiers such as in aerial amplifiers, radar systems, oscilloscopes, spectrum analyzers etc. PIN DESCRIPTION Code: FB 1 emitter 2 collector 3 base page 1 The transistor features very low intermodulation distortion and high power gain. Due to its very high transition frequency, it also has excellent wideband properties and low noise up to high frequencies. 2 Bottom view 3 MBK514 Fig.1 SOT89. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT open base − − 100 mA total power dissipation up to Ts = 145 °C (note 1) − 1 W fT transition frequency Ic = 50 mA; VCE = 10 V; f = 500 MHz; Tj = 25 °C 5.5 − GHz Cre feedback capacitance Ic = 10 mA; VCE = 10 V; f = 1 MHz; Tamb = 25 °C 1.3 − pF F noise figure Ic = 50 mA; VCE = 10 V; Zs = opt.; f = 500 MHz; Tamb = 25 °C 3.3 − dB VCEO collector-emitter voltage IC DC collector current Ptot 15 V LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 20 V VCEO collector-emitter voltage open base − 15 V VEBO emitter-base voltage open collector − 3.3 V IC DC collector current − 100 mA ICM peak collector current f > 1 MHz − 150 mA Ptot total power dissipation up to Ts = 145 °C (note 1) − 1 W Tstg storage temperature −65 150 °C Tj junction temperature − 175 °C Note 1. Ts is the temperature at the soldering point of the collector tab. September 1995 2 Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFQ19 THERMAL RESISTANCE SYMBOL Rth j-s PARAMETER CONDITIONS thermal resistance from junction to soldering point THERMAL RESISTANCE up to Ts = 145 °C (note 1) 30 K/W Note 1. Ts is the temperature at the soldering point of the collector tab. CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. − − 100 UNIT ICBO collector cut-off current hFE DC current gain IC = 70 mA; VCE = 10 V 25 80 − Cc collector capacitance IE = ie = 0; VCB = 10 V; f = 1 MHz − 1.6 − pF Ce emitter capacitance IC = ic = 0; VEB = 0.5 V; f = 1 MHz − 5 − pF Cre feedback capacitance IC = 10 mA; VCE = 10 V; f = 1 MHz; Tamb = 25 °C − 1.3 − pF fT transition frequency IC = 70 mA; VCE = 10 V; f = 500 MHz 4.4 5.5 − GHz GUM maximum unilateral power gain (note 1) IC = 50 mA; VCE = 10 V; f = 500 MHz; Tamb = 25 °C − 11.5 − dB IC = 50 mA; VCE = 10 V; f = 800 MHz; Tamb = 25 °C − 7.5 − dB IC = 50 mA; VCE = 10 V; Zs = opt.; f = 500 MHz; Tamb = 25 °C − 3.3 − dB F noise figure IE = 0; VCB = 10 V Note 1. GUM is the maximum unilateral power gain, assuming S12 is zero and 2 S 21 - dB. G UM = 10 log ------------------------------------------------------------2 2 1 – S 11 1 – S 22 September 1995 3 nA Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFQ19 MBB774 MBB830 120 5 handbook, halfpage handbook, halfpage Cc (pF) h FE 4 80 3 2 40 1 0 0 0 40 80 120 0 5 I C (mA) IE = ie = 0; f = 1 MHz; Tj = 25 °C. Fig.2 Fig.3 DC current gain as a function of collector current. MBB773 handbook, halfpage fT (GHz) 6 4 2 0 0 40 80 I C (mA) 120 VCE = 10 V; f = 500 MHz; Tj = 25 °C. Fig.4 Transition frequency as a function of collector current. September 1995 15 20 V CB (V) VCE = 10 V; Tj = 25 °C. 8 10 4 Collector capacitance as a function of collector-base voltage. Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFQ19 PACKAGE OUTLINE Plastic surface mounted package; collector pad for good heat transfer; 3 leads SOT89 B D A b3 E HE L 1 2 3 c b2 w M b1 e1 e 0 2 4 mm scale DIMENSIONS (mm are the original dimensions) UNIT A b1 b2 b3 c D E e e1 HE L min. w mm 1.6 1.4 0.48 0.35 0.53 0.40 1.8 1.4 0.44 0.37 4.6 4.4 2.6 2.4 3.0 1.5 4.25 3.75 0.8 0.13 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ SOT89 September 1995 EUROPEAN PROJECTION ISSUE DATE 97-02-28 5 Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFQ19 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 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