PHILIPS BFR54

DISCRETE SEMICONDUCTORS
DATA SHEET
BFR540
NPN 9 GHz wideband transistor
Product specification
Supersedes data of 1995 September
1999 Aug 23
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
FEATURES
BFR540
The transistor is encapsulated in a
plastic SOT23 envelope.
• High power gain
• Low noise figure
• High transition frequency
• Gold metallization ensures
excellent reliability.
DESCRIPTION
The BFR540 is an npn silicon planar
epitaxial transistor, intended for
applications in the RF frontend in
wideband applications in the GHz
range, such as analog and digital
cellular telephones, cordless
telephones (CT1, CT2, DECT, etc.),
radar detectors, satellite TV tuners
(SATV), MATV/CATV amplifiers and
repeater amplifiers in fibre-optic
systems.
PINNING
3
fpage
PIN
DESCRIPTION
Code: N29
1
base
2
emitter
1
collector
Top view
3
2
MSB003
Fig.1 SOT23.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
−
20
V
RBE = 0
−
−
15
V
−
−
120
mA
−
−
500
mW
VCES
collector-emitter voltage
IC
DC collector current
Ptot
total power dissipation
up to Ts = 70 °C; note 1
hFE
DC current gain
IC = 40 mA; VCE = 8 V
60
120
250
Cre
feedback capacitance
IC = ic = 0; VCB = 8 V; f = 1 MHz
−
0.6
−
pF
fT
transition frequency
IC = 40 mA; VCE = 8 V; f = 1 GHz
−
9
−
GHz
GUM
maximum unilateral
power gain
IC = 40 mA; VCE = 8 V;
Tamb = 25 °C; f = 900 MHz
−
14
−
dB
IC = 40 mA; VCE = 8 V;
Tamb = 25 °C; f = 2 GHz
−
7
−
dB
S212
insertion power gain
IC = 40 mA; VCE = 8 V;
Tamb = 25 °C; f = 900 MHz
12
13
−
dB
F
noise figure
Γs = Γopt; IC = 10 mA; VCE = 8 V;
Tamb = 25 °C; f = 900 MHz
−
1.3
1.8
dB
Γs = Γopt; IC = 40 mA; VCE = 8 V;
Tamb = 25 °C; f = 900 MHz
−
1.9
2.4
dB
Γs = Γopt; IC = 10 mA; VCE = 8 V;
Tamb = 25 °C; f = 2 GHz
−
2.1
−
dB
Note
1. Ts is the temperature at the soldering point of the collector tab.
1999 Aug 23
2
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFR540
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
20
V
VCES
collector-emitter voltage
RBE = 0
−
15
V
VEBO
emitter-base voltage
open collector
−
2.5
V
IC
DC collector current
−
120
mA
Ptot
total power dissipation
−
500
mW
Tstg
storage temperature
−65
150
°C
Tj
junction temperature
−
175
°C
up to Ts = 70 °C; note 1
THERMAL RESISTANCE
SYMBOL
Rth j-s
PARAMETER
from junction to soldering point
CONDITIONS
see note 1
Note
1. Ts is the temperature at the soldering point of the collector tab.
1999 Aug 23
3
THERMAL RESISTANCE
260 K/W
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFR540
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
ICBO
collector cut-off current
IE = 0; VCB = 8 V
−
−
50
hFE
DC current gain
IC = 40 mA; VCE = 8 V
60
120
250
Ce
emitter capacitance
IC = ic = 0; VEB = 0.5 V; f = 1 MHz
−
2
−
Cc
collector capacitance
IE = ie = 0; VCB = 8 V; f = 1 MHz
−
0.9
−
pF
Cre
feedback capacitance
IC = 0; VCB = 8 V; f = 1 MHz
−
0.6
−
pF
fT
transition frequency
IC = 40 mA; VCE = 8 V; f = 1 GHz
−
9
−
GHz
GUM
maximum unilateral
power gain (note 1)
IC = 40 mA; VCE = 8 V;
Tamb = 25 °C; f = 900 MHz
−
14
−
dB
IC = 40 mA; VCE = 8 V;
Tamb = 25 °C; f = 2 GHz
−
7
−
dB
nA
pF
S212
insertion power gain
IC = 40 mA; VCE = 8 V;
Tamb = 25 °C; f = 900 MHz
12
13
−
dB
F
noise figure
Γs = Γopt; IC = 10 mA; VCE = 8 V;
Tamb = 25 °C; f = 900 MHz
−
1.3
1.8
dB
Γs = Γopt; IC = 40 mA; VCE = 8 V;
Tamb = 25 °C; f = 900 MHz
−
1.9
2.4
dB
Γs = Γopt; IC = 10 mA; VCE = 8 V;
Tamb = 25 °C; f = 2 GHz
−
2.1
−
dB
PL1
output power at 1 dB gain
compression
IC = 40 mA; VCE = 8 V; RL = 50 Ω;
Tamb = 25 °C; f = 900 MHz
−
21
−
dBm
ITO
third order intercept point
note 2
−
34
−
dBm
Vo
output voltage (note 3)
IC = 40 mA; VCE = 8 V;
ZL = ZS = 75 Ω; Tamb = 25 °C
−
550
−
mV
Notes
1. GUM is the maximum unilateral power gain, assuming S12 is zero and
2
G UM
S 21
- dB.
= 10 log --------------------------------------------------------2
2
( 1 – S 11 ) ( 1 – S 22 )
2. IC = 40 mA; VCE = 8 V; RL = 50 Ω;
Tamb = 25 °C; f = 900 MHz;
fp = 900 MHz; fq = 902 MHz;
measured at f(2p−q) = 898 MHz and f(2q−p) = 904 MHz.
3. dim = −60 dB (DIN 45004B);
Vp = VO; Vq = VO −6 dB; f p = 795.25 MHz;
VR = VO −6 dB; fq = 803.25 MHz; fr = 805.25 MHz;
measured at f(p+q-r) = 793.25 MHz; preliminary data.
1999 Aug 23
4
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFR540
MRA687
MEA398 - 1
600
1/2 page (Datasheet)
250
handbook, halfpage
hFE
22 mm
P tot
(mW)
200
400
150
100
200
50
0
0
50
150
100
Ts
0
10−2
200
( o C)
10−1
10 I (mA) 102
C
1
VCE = 8 V.
Fig.3
Fig.2 Power derating curve.
MRA688
1.0
Cre
(pF)
DC current gain as a function of collector
current.
MRA689
12
handbook, halfpage
handbook, halfpage
fT
(GHz)
0.8
VCE = 8V
8
0.6
VCE = 4V
0.4
4
0.2
0
0
4
8
VCB (V)
0
10−1
12
1
IC = 0; f = 1 MHz.
Tamb = 25 °C; f = 1 GHz.
Fig.4
Fig.5
Feedback capacitance as a function of
collector-base voltage.
1999 Aug 23
5
10
IC (mA)
102
Transition frequency as a function of
collector current.
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFR540
In Figs 6 to 9, GUM = maximum unilateral power gain;
MSG = maximum stable gain; Gmax = maximum available
gain.
MRA690
25
MRA691
25
handbook, halfpage
handbook, halfpage
gain
(dB)
gain
(dB)
20
20
Gmax
MSG
15
15
GUM
10
10
5
5
0
0
20
40
IC (mA)
Gmax
GUM
0
60
0
VCE = 8 V; f = 900 MHz.
20
40
IC (mA)
VCE = 8 V; f = 2 GHz.
Fig.6 Gain as a function of collector current.
Fig.7 Gain as a function of collector current.
MRA692
MRA693
50
50
handbook, halfpage
handbook, halfpage
gain
(dB)
gain
(dB)
GUM
40
GUM
40
MSG
MSG
30
60
30
20
20
Gmax
10
0
10
102
103
f (MHz)
0
10
104
102
103
f (MHz)
104
VCE = 8 V; Ic = 40 mA.
VCE = 8 V; Ic = 10 mA.
Fig.8 Gain as a function of frequency.
1999 Aug 23
Gmax
10
Fig.9 Gain as a function of frequency.
6
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
MRA698
BFR540
MRA699
Fmin
20
Gass
handbook, halfpage
(dB)
4
(dB)
15
(dB)
4
5
handbook, halfpage
f = 900 MHz
5
Fmin
Gass
40 mA
20
Gass
(dB)
15
Gass
1000 MHz
2000 MHz 10
3
IC = 10 mA
10
3
2000 MHz
5
2
1000 MHz
900 MHz
500 MHz
1
40 mA
0
10
1
−5
102
0
1
5
2
Fmin
IC (mA)
10 mA
Fmin
0
0
102
103
f (MHz)
−5
104
VCE = 8 V.
VCE = 8 V.
Fig.10 Minimum noise figure and associated
available gain as functions of collector
current.
Fig.11 Minimum noise figure and associated
available gain as functions of frequency.
90°
handbook, full pagewidth
1.0
1
135°
0.8
45°
2
0.5
0.6
pot. unst.
region
Fmin = 1.3 dB
0.2
0.4
5
ΓOPT
180°
0.2
0
0.5
0.2
1
2
5
0°
F = 1.5 dB
stability
circle
0
F = 2 dB
5
0.2
F = 3 dB
−135°
0.5
2
−45°
1
MRA700
Zo = 50 Ω.
VCE = 8 V; IC = 10 mA; f = 900 MHz.
−90°
Fig.12 Noise circle figure.
1999 Aug 23
7
1.0
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFR540
90°
handbook, full pagewidth
1.0
1
135°
0.8
45°
2
0.5
0.6
G = 5 dB
Gmax = 7.8 dB
G = 7 dB
G = 6 dB
0.4
5
Γ MS
180°
0.2
0.2
0
0.5
1
2
5
0°
0
Fmin = 2.1 dB
Γ OPT
0.2
5
F = 2.5 dB
F = 3 dB
−135°
0.5
F = 4 dB
2
−45°
1
MRA701
−90°
Zo = 50 Ω.
VCE = 8 V; IC = 10 mA; f = 2000 MHz.
Fig.13 Noise circle figure.
1999 Aug 23
8
1.0
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFR540
90°
handbook, full pagewidth
1.0
1
135°
0.8
45°
2
0.5
0.6
0.2
0.4
5
3 GHz
0.2
180°
0.2
0
0.5
1
2
0.2
5
0°
5
40 MHz
0.5
−135°
2
0
−45°
1
MRA694
−90°
VCE = 8 V; IC = 40 mA.
Zo = 50 Ω.
Fig.14 Common emitter input reflection coefficient (S11).
90°
handbook, full pagewidth
135°
45°
40 MHz
3 GHz
180°
50
40
30
20
0°
10
−135°
−45°
−90°
MRA695
VCE = 8 V; IC = 40 mA.
Fig.15 Common emitter forward transmission coefficient (S21).
1999 Aug 23
9
1.0
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFR540
90°
handbook, full pagewidth
135°
45°
3 GHz
40 MHz
180°
0.5
0.4
0.3
0.2
0°
0.1
−135°
−45°
−90°
MRA696
VCE = 8 V; IC = 40 mA.
Fig.16 Common emitter reverse transmission coefficient (S12).
90°
handbook, full pagewidth
1.0
1
135°
0.8
45°
2
0.5
0.6
0.2
0.4
5
0.2
180°
0.2
0
0.5
1
2
5
0°
0
3 GHz
40 MHz
0.2
−135°
0.5
2
5
−45°
1
MRA697
VCE = 8 V; IC = 40 mA.
Zo = 50 Ω.
−90°
Fig.17 Common emitter output reflection coefficient (S22).
1999 Aug 23
10
1.0
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFR540
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT23
D
E
B
A
X
HE
v M A
3
Q
A
A1
1
2
e1
bp
c
w M B
Lp
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max.
bp
c
D
E
e
e1
HE
Lp
Q
v
w
mm
1.1
0.9
0.1
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
1.9
0.95
2.5
2.1
0.45
0.15
0.55
0.45
0.2
0.1
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
ISSUE DATE
97-02-28
SOT23
1999 Aug 23
EUROPEAN
PROJECTION
11
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFR540
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1999 Aug 23
12
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFR540
NOTES
1999 Aug 23
13
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFR540
NOTES
1999 Aug 23
14
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFR540
NOTES
1999 Aug 23
15
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SCA 67
© Philips Electronics N.V. 1999
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Printed in The Netherlands
125006/03/pp16
Date of release: 1999
Aug 23
Document order number:
9397 750 06338