DISCRETE SEMICONDUCTORS DATA SHEET BFG97 NPN 5 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 5 GHz wideband transistor DESCRIPTION BFG97 PINNING NPN planar epitaxial transistor mounted in a plastic SOT223 envelope. It features excellent output voltage capabilities, and is primarily intended for use in MATV applications. PIN DESCRIPTION 1 emitter 2 base 3 emitter 4 collector 4 age PNP complement is the BFG31. 1 2 3 Top view MSB002 - 1 Fig.1 SOT223. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VCBO collector-base voltage open emitter − − 20 V VCEO collector-emitter voltage open base − − 15 V IC DC collector current − − 100 mA Ptot total power dissipation up to Ts = 125 °C (note 1) − − 1 W hFE DC current gain IC = 70 mA; VCE = 10 V; Tj = 25 °C 25 80 − fT transition frequency IC = 70 mA; VCE = 10 V; f = 500 MHz; Tamb = 25 °C − 5.5 − GHz GUM maximum unilateral power gain IC = 70 mA; VCE = 10 V; f = 500 MHz; Tamb = 25 °C − 16 − dB IC = 70 mA; VCE = 10 V; f = 800 MHz; Tamb = 25 °C − 12 − dB IC = 70 mA; VCE = 10 V; dim = −60 dB; RL = 75 Ω; f(p+q−r) = 793.25 MHz; Tamb = 25 °C − 700 − mV MAX. UNIT Vo output voltage LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. VCBO collector-base voltage open emitter − 20 V VCEO collector-emitter voltage open base − 15 V VEBO emitter-base voltage open collector − 3 V IC DC collector current − 100 mA Ptot total power dissipation up to Ts = 125 °C (note 1) − 1 W Tstg storage temperature −65 150 °C Tj junction temperature − 175 °C Note 1. Ts is the temperature at the soldering point of the collector tab. September 1995 2 Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFG97 THERMAL RESISTANCE SYMBOL Rth j-s PARAMETER CONDITIONS thermal resistance from junction to soldering point THERMAL RESISTANCE up to Ts = 125 °C (note 1) 50 K/W Note 1. Ts is the temperature at the soldering point of the collector tab. CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT ICBO collector cut-off current IE = 0; VCB = 10 V − − 100 hFE DC current gain IC = 70 mA; VCE = 10 V 25 80 − fT transition frequency IC = 70 mA; VCE = 10 V; f = 500 MHz; Tamb = 25 °C − 5.5 − GHz Cc collector capacitance IE = ie = 0; VCB = 10 V; f = 1 MHz − 1.5 − pF Ce emitter capacitance IC = ic = 0; VEB = 0.5 V; f = 1 MHz − 6.5 − pF Cre feedback capacitance IC = 0; VCE = 10 V; f = 1 MHz − 1 − pF GUM maximum unilateral power gain (note 1) IC = 70 mA; VCE = 10 V; f = 500 MHz; Tamb = 25 °C − 16 − dB IC = 70 mA; VCE = 10 V; f = 800 MHz; Tamb = 25 °C − 12 − dB note 2 − 750 − mV note 3 − 700 − mV note 4 − −56 − dB note 5 − −53 − dB Vo output voltage d2 second order intermodulation distortion Notes 1. GUM is the maximum unilateral power gain, assuming S12 is zero and 2 G UM S 21 - dB. = 10 log ------------------------------------------------------------2 2 1 – S 11 1 – S 22 2. dim = −60 dB (DIN 45004B); IC = 70 mA; VCE = 10 V; RL = 75 Ω; Tamb = 25 °C Vp = Vo at dim = −60 dB; Vq = Vo −6 dB; fp = 445.25 MHz; Vr = Vo −6 dB; fq = 453.25 MHz; fr = 455.25 MHz; measured at f(p+q−r) = 443.25 MHz. 3. dim = −60 dB (DIN 45004B); IC = 70 mA; VCE = 10 V; RL = 75 Ω; Tamb = 25 °C Vp = Vo at dim = −60 dB; Vq = Vo −6 dB; fp = 795.25 MHz; Vr = Vo −6 dB; fq = 803.25 MHz; fr = 805.25 MHz; measured at f(p+q−r) = 793.25 MHz. 4. IC = 70 mA; VCE = 10 V; RL = 75 Ω; Tamb = 25 °C; Vp = Vq = Vo = 50 dBmV; f(p+q) = 450 MHz; fp = 50 MHz; fq = 400 MHz. 5. IC = 70 mA; VCE = 10 V; RL = 75 Ω; Tamb = 25 °C; Vp = Vq = Vo = 50 dBmV; f(p+q) = 810 MHz; fp = 250 MHz; fq = 560 MHz. September 1995 3 nA Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFG97 , VCC handbook, full pagewidth L2 VBB C4 R1 C1 L4 L6 L5 C3 input 75 Ω C7 L1 C8 R2 output 75 Ω L3 DUT C5 C2 C6 R3 R4 MBB807 Fig.2 Intermodulation distortion and second order intermodulation distortion test circuit. List of components (see test circuit) DESIGNATION DESCRIPTION VALUE DIMENSIONS CATALOGUE NO. C2, C3, C7, C8 multilayer ceramic capacitor 10 nF 2222 590 08627 C1, C4, C6 multilayer ceramic capacitor 1.2 pF 2222 851 12128 C5 (note 1) miniature ceramic plate capacitor 10 nF 2222 629 08103 L1 (note 1) 0.5 turns 0.4 mm copper wire L2 microstripline 75 Ω length 14 mm; width 2.5 mm L3 microstripline 75 Ω length 8 mm; width 2.5 mm L4, L5 (note 1) 1.5 turns 0.4 mm copper wire L6 microstripline 75 Ω L7 Ferroxcube choke 5 µH 3122 108 20153 R1 metal film resistor 10 kΩ 2322 180 73103 R2 (note 1) metal film resistor 220 Ω 2322 180 73221 R3, R4 metal film resistor 30 Ω 2322 180 73309 int. dia. 3 mm int. dia. 3 mm; winding pitch 1 mm length 19 mm; width 2.5 mm Notes The circuit has been built on a double copper-clad printed circuit board with PTFE dielectric (εr = 2.2); thickness 1⁄16 inch; thickness of copper sheet 2 × 35 µm. 1. Components C5, L1, L4, L5, and R2 are mounted on the underside of the PCB. September 1995 4 Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFG97 handbook, full pagewidth VBB VCC C3 C7 R1 C2 75 Ω input L1 C1 L7 R3 C8 L5 L2 L3 L6 C4 75 Ω output C6 R4 C5 R2 L4 MEA971 80 mm handbook, full pagewidth 60 mm MEA969 80 mm handbook, full pagewidth 60 mm mounting screws M 2.5 (8x) MEA970 Fig.3 Intermodulation distortion and second order intermodulation distortion printed circuit board. September 1995 5 Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFG97 MBB797 MBB774 1.2 120 handbook, halfpage P handbook, halfpage tot (W) h FE 1.0 0.8 80 0.6 0.4 40 0.2 0 0 0 50 100 150 200 ( o C) Ts 0 40 80 120 I C (mA) VCE = 10 V; Tj = 25 °C. Fig.4 Power derating curve. Fig.5 MBB798 3 DC current gain as a function of collector current. MBB773 8 handbook, halfpage handbook, halfpage fT (GHz) C re (pF) 6 2 4 1 2 0 0 0 10 VCE (V) 20 0 40 IE = 0; f = 1 MHz; Tj = 25 °C. VCE = 10 V; f = 500 MHz; Tj = 25 °C. Fig.6 Fig.7 Feedback capacitance as a function of collector-emitter voltage. September 1995 6 80 I C (mA) 120 Transition frequency as a function of collector current. Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFG97 MBB799 45 handbook, halfpage d im (dB) d im (dB) 50 50 55 55 60 60 65 65 70 20 MBB796 45 handbook, halfpage 40 60 80 70 20 100 120 I C (mA) 40 60 80 VCE = 10 V; Vo = 750 mV; f(p+q−r) = 443.25 MHz; Tamb = 25 °C. VCE = 10 V; Vo = 700 mV; f(p+q−r) = 793.25 MHz; Tamb = 25 °C. Fig.8 Fig.9 Intermodulation distortion as a function of collector current. MBB800 45 MBB801 handbook, halfpage d2 (dB) d2 (dB) 50 50 55 55 60 60 65 65 70 20 Intermodulation distortion as a function of collector current. 45 handbook, halfpage 100 120 I C (mA) 40 60 80 70 20 100 120 I C (mA) VCE = 10 V; Vo = 50 dBmV; f(p+q) = 450 MHz; Tamb = 25 °C. 60 80 100 120 I C (mA) VCE = 10 V; Vo = 50 dBmV; f(p+q) = 810 MHz; Tamb = 25 °C. Fig.10 Second order intermodulation distortion as a function of collector current. September 1995 40 Fig.11 Second order intermodulation distortion as a function of collector current. 7 Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFG97 MEA963 60 MEA964 60 handbook, Z halfpage handbook, Z halfpage L (Ω) 50 L (Ω) 50 RL RL 40 40 30 30 20 20 10 10 0 0 –10 XL –20 0 0.25 0.50 0.75 –10 1 POUT (W) XL 0 0.25 0.50 0.75 1 POUT (W) VCE = 6 V; f = 900 MHz. VCE = 7.5 V; f = 900 MHz. Fig.12 Load impedance as a function of output power. Fig.13 Load impedance as a function of output power. MEA965 60 handbook, Z halfpage L (Ω) RL 50 40 30 20 10 0 –10 XL 0 0.25 0.50 0.75 1 POUT (W) VCE = 10 V; f = 900 MHz. Fig.14 Load impedance as a function of output power. September 1995 8 Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFG97 MEA957 MEA958 20 20 handbook, halfpage handbook, halfpage Zi (Ω) Zi (Ω) 15 15 xi 10 10 ri ri xi 5 5 0 0 –5 0 0.25 0.50 0.75 –5 1 POUT (W) 0 0.25 0.50 0.75 1 POUT (W) VCE = 6 V; f = 900 MHz. VCE = 7.5 V; f = 900 MHz. Fig.15 Input impedance as a function of output power. Fig.16 Input impedance as a function of output power. MEA959 20 handbook, halfpage Zi (Ω) 15 ri 10 xi 5 0 5 –10 0 0.25 0.50 0.75 1 POUT (W) VCE = 10 V; f = 900 MHz. Fig.17 Input impedance as a function of output power. September 1995 9 Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFG97 MEA961 MEA962 80 1.5 handbook, halfpage handbook, halfpage η (%) P OUT (W) 70 V CE = 10 V 1 V CE = 6 V 60 7.5 V 6V 7.5 V 0.5 10 V 50 40 0 0.5 1 0 POUT (W) 1.5 0 100 200 300 P IN (mW) f = 900 MHz. f = 900 MHz. Fig.18 Efficiency as a function of output power. Fig.19 Output power as a function of input power. MEA960 MBB802 10 50 handbook, halfpage handbook, halfpage G UM Gp (dB) (dB) 40 8 V CE = 10 V 6 30 7.5 V 20 4 6V 10 2 0 0 0 0.5 1 POUT (W) 1.5 10 103 f (MHz) 104 IC = 70 mA; VCE = 10 V; Tamb = 25 °C. f = 900 MHz. Fig.20 Power gain as a function of output power. September 1995 102 Fig.21 Maximum unilateral power gain as a function of frequency. 10 Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFG97 50 handbook, full pagewidth 25 100 40 MHz 10 250 +j 10 0 25 50 100 250 –j 250 2 GHz 10 100 25 MBB803 50 IC = 70 mA; VCE = 10 V; Tamb = 25 °C. Zo = 50 Ω. Fig.22 Common emitter input reflection coefficient (S11). 90 o handbook, full pagewidth 60 o 120 o 150 o 30 o 2 GHz ϕ 100 180 o 80 60 40 20 0o 40 MHz ϕ 30 o 150 o 60 o 120 o 90 o MBB806 IC = 70 mA; VCE = 10 V; Tamb = 25 °C. Fig.23 Common emitter forward transmission coefficient (S21). September 1995 11 Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFG97 90 o handbook, full pagewidth 60 o 120 o 150 o 30 o 2 GHz ϕ 180 o 0.5 0.4 0.3 0.2 0.1 0o 40 MHz ϕ 30 o 150 o 60 o 120 o 90 o MBB805 IC = 70 mA; VCE = 10 V; Tamb = 25 °C. Fig.24 Common emitter reverse transmission coefficient (S12). 50 handbook, full pagewidth 25 100 10 250 2 GHz +j 0 10 25 50 100 250 –j 250 10 40 MHz 100 25 50 MBB804 IC = 70 mA; VCE = 10 V; Tamb = 25 °C. Zo = 50 Ω. Fig.25 Common emitter output reflection coefficient (S22). September 1995 12 Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFG97 PACKAGE OUTLINE Plastic surface mounted package; collector pad for good heat transfer; 4 leads D SOT223 E B A X c y HE v M A b1 4 Q A A1 1 2 3 Lp bp e1 w M B detail X e 0 2 4 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 bp b1 c D E e e1 HE Lp Q v w y mm 1.8 1.5 0.10 0.01 0.80 0.60 3.1 2.9 0.32 0.22 6.7 6.3 3.7 3.3 4.6 2.3 7.3 6.7 1.1 0.7 0.95 0.85 0.2 0.1 0.1 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 96-11-11 97-02-28 SOT223 September 1995 EUROPEAN PROJECTION 13 Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFG97 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 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