DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D088 BFR540 NPN 9 GHz wideband transistor Product specification Supersedes data of 1999 Aug 23 2000 May 30 Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFR540 FEATURES DESCRIPTION • High power gain NPN silicon planar epitaxial transistor in a SOT23 plastic package. • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. APPLICATIONS RF front end wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT, etc.), radar detectors, satellite TV tuners (SATV), MATV/CATV amplifiers and repeater amplifiers in fibre-optic systems. 3 fpage PINNING PIN DESCRIPTION 1 base 2 emitter 3 1 2 Top view collector MSB003 Marking code: N29. Fig.1 SOT23. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VCBO collector-base voltage open emitter − − 20 V RBE = 0 − − 15 V − − 120 mA − − 500 mW VCES collector-emitter voltage IC DC collector current Ptot total power dissipation Ts ≤ 70 °C; note 1 hFE DC current gain IC = 40 mA; VCE = 8 V 100 120 250 Cre feedback capacitance IC = ic = 0; VCB = 8 V; f = 1 MHz − 0.6 − pF fT transition frequency IC = 40 mA; VCE = 8 V; f = 1 GHz − 9 − GHz GUM maximum unilateral power gain IC = 40 mA; VCE = 8 V; Tamb = 25 °C; f = 900 MHz − 14 − dB IC = 40 mA; VCE = 8 V; Tamb = 25 °C; f = 2 GHz − 7 − dB s212 insertion power gain IC = 40 mA; VCE = 8 V; Tamb = 25 °C; f = 900 MHz 12 13 − dB F noise figure Γs = Γopt; IC = 10 mA; VCE = 8 V; Tamb = 25 °C; f = 900 MHz − 1.3 1.8 dB Γs = Γopt; IC = 40 mA; VCE = 8 V; Tamb = 25 °C; f = 900 MHz − 1.9 2.4 dB Γs = Γopt; IC = 10 mA; VCE = 8 V; Tamb = 25 °C; f = 2 GHz − 2.1 − dB Note 1. Ts is the temperature at the soldering point of the collector tab. 2000 May 30 2 Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFR540 LIMITING VALUES In accordance with the Absolute Maximum System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 20 V VCES collector-emitter voltage RBE = 0 − 15 V VEBO emitter-base voltage open collector − 2.5 V IC DC collector current − 120 mA Ptot total power dissipation − 500 mW Tstg storage temperature −65 150 °C Tj junction temperature − 175 °C Ts ≤ 70 °C; note 1 Note 1. Ts is the temperature at the soldering point of the collector tab. THERMAL CHARACTERISTICS SYMBOL Rth j-s PARAMETER from junction to soldering point CONDITIONS see note 1 Note 1. Ts is the temperature at the soldering point of the collector tab. 2000 May 30 3 VALUE UNIT 260 K/W Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFR540 CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT ICBO collector cut-off current IE = 0; VCB = 8 V − − 50 hFE DC current gain IC = 40 mA; VCE = 8 V 100 120 250 Ce emitter capacitance IC = ic = 0; VEB = 0.5 V; f = 1 MHz − 2 − Cc collector capacitance IE = ie = 0; VCB = 8 V; f = 1 MHz − 0.9 − pF Cre feedback capacitance IC = 0; VCB = 8 V; f = 1 MHz − 0.6 − pF fT transition frequency IC = 40 mA; VCE = 8 V; f = 1 GHz − 9 − GHz GUM maximum unilateral power gain; note 1 IC = 40 mA; VCE = 8 V; Tamb = 25 °C; f = 900 MHz − 14 − dB IC = 40 mA; VCE = 8 V; Tamb = 25 °C; f = 2 GHz − 7 − dB nA pF |s21|2 insertion power gain IC = 40 mA; VCE = 8 V; Tamb = 25 °C; f = 900 MHz 12 13 − dB F noise figure Γs = Γopt; IC = 10 mA; VCE = 8 V; Tamb = 25 °C; f = 900 MHz − 1.3 1.8 dB Γs = Γopt; IC = 40 mA; VCE = 8 V; Tamb = 25 °C; f = 900 MHz − 1.9 2.4 dB Γs = Γopt; IC = 10 mA; VCE = 8 V; Tamb = 25 °C; f = 2 GHz − 2.1 − dB PL1 output power at 1 dB gain compression IC = 40 mA; VCE = 8 V; RL = 50 Ω; Tamb = 25 °C; f = 900 MHz − 21 − dBm ITO third order intercept point note 2 − 34 − dBm Vo output voltage; note 3 IC = 40 mA; VCE = 8 V; ZL = ZS = 75 Ω; Tamb = 25 °C − 550 − mV Notes 1. GUM is the maximum unilateral power gain, assuming s12 is zero and 2 s 21 G UM = 10 log ------------------------------------------------------- dB. 2 2 ( 1 – s 11 ) ( 1 – s 22 ) 2. IC = 40 mA; VCE = 8 V; RL = 50 Ω; Tamb = 25 °C; f = 900 MHz; fp = 900 MHz; fq = 902 MHz; measured at f(2p−q) = 898 MHz and f(2q−p) = 904 MHz. 3. dim = −60 dB (DIN 45004B); Vp = VO; Vq = VO −6 dB; f p = 795.25 MHz; VR = VO −6 dB; fq = 803.25 MHz; fr = 805.25 MHz; measured at f(p+q-r) = 793.25 MHz; preliminary data. 2000 May 30 4 Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFR540 MRA687 MEA398 - 1 600 1/2 page (Datasheet) 250 handbook, halfpage hFE 22 mm P tot (mW) 200 400 150 100 200 50 0 0 50 150 100 Ts 0 10−2 200 ( o C) 10−1 10 I (mA) 102 C 1 VCE = 8 V. Fig.3 Fig.2 Power derating curve. MRA688 1.0 Cre (pF) DC current gain as a function of collector current. MRA689 12 handbook, halfpage handbook, halfpage fT (GHz) 0.8 VCE = 8V 8 0.6 VCE = 4V 0.4 4 0.2 0 0 4 8 VCB (V) 0 10−1 12 1 IC = 0; f = 1 MHz. Tamb = 25 °C; f = 1 GHz. Fig.4 Fig.5 Feedback capacitance as a function of collector-base voltage. 2000 May 30 5 10 IC (mA) 102 Transition frequency as a function of collector current. Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFR540 In Figs 6 to 9, GUM = maximum unilateral power gain; MSG = maximum stable gain; Gmax = maximum available gain. MRA690 25 MRA691 25 handbook, halfpage handbook, halfpage gain (dB) gain (dB) 20 20 Gmax MSG 15 15 GUM 10 10 5 5 0 Gmax GUM 0 0 20 40 IC (mA) 60 0 VCE = 8 V; f = 900 MHz. 20 40 IC (mA) VCE = 8 V; f = 2 GHz. Fig.6 Gain as a function of collector current. Fig.7 Gain as a function of collector current. MRA692 MRA693 50 50 handbook, halfpage handbook, halfpage gain (dB) gain (dB) GUM 40 GUM 40 MSG MSG 30 60 30 20 20 Gmax 10 0 10 102 103 f (MHz) 0 10 104 VCE = 8 V; Ic = 10 mA. 102 103 f (MHz) 104 VCE = 8 V; Ic = 40 mA. Fig.8 Gain as a function of frequency. 2000 May 30 Gmax 10 Fig.9 Gain as a function of frequency. 6 Philips Semiconductors Product specification NPN 9 GHz wideband transistor MRA698 BFR540 MRA699 Fmin 20 Gass handbook, halfpage (dB) 4 (dB) 15 (dB) 4 5 handbook, halfpage f = 900 MHz 5 Fmin Gass 40 mA 20 Gass (dB) 15 Gass 1000 MHz 2000 MHz 10 3 IC = 10 mA 10 3 2000 MHz 5 2 1000 MHz 900 MHz 500 MHz 1 40 mA 0 10 1 −5 102 0 1 5 2 Fmin IC (mA) 10 mA Fmin 0 0 102 VCE = 8 V. 103 −5 104 VCE = 8 V. Fig.10 Minimum noise figure and associated available gain as functions of collector current. Fig.11 Minimum noise figure and associated available gain as functions of frequency. 90° handbook, full pagewidth 1.0 1 135° 0.8 45° 2 0.5 0.6 pot. unst. region Fmin = 1.3 dB 0.2 0.4 5 ΓOPT 180° 0.2 0 0.5 0.2 1 2 5 0° F = 1.5 dB stability circle 0 F = 2 dB 5 0.2 F = 3 dB −135° 0.5 2 −45° 1 MRA700 Zo = 50 Ω. VCE = 8 V; IC = 10 mA; f = 900 MHz. −90° Fig.12 Noise circle figure. 2000 May 30 f (MHz) 7 1.0 Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFR540 90° handbook, full pagewidth 1.0 1 135° 0.8 45° 2 0.5 0.6 G = 5 dB Gmax = 7.8 dB G = 7 dB G = 6 dB 0.4 5 Γ MS 180° 0.2 0.2 0 0.5 1 2 5 0° 0 Fmin = 2.1 dB Γ OPT 0.2 5 F = 2.5 dB F = 3 dB −135° 0.5 F = 4 dB 2 −45° 1 MRA701 Zo = 50 Ω. VCE = 8 V; IC = 10 mA; f = 2000 MHz. −90° Fig.13 Noise circle figure. 2000 May 30 8 1.0 Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFR540 90° handbook, full pagewidth 1.0 1 135° 0.8 45° 2 0.5 0.6 0.2 0.4 5 3 GHz 0.2 180° 0.2 0 0.5 1 2 0.2 5 0° 5 40 MHz 0.5 −135° 2 0 −45° 1 MRA694 −90° VCE = 8 V; IC = 40 mA. Zo = 50 Ω. Fig.14 Common emitter input reflection coefficient (s11). 90° handbook, full pagewidth 135° 45° 40 MHz 3 GHz 180° 50 40 30 20 0° 10 −135° −45° −90° MRA695 VCE = 8 V; IC = 40 mA. Fig.15 Common emitter forward transmission coefficient (s21). 2000 May 30 9 1.0 Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFR540 90° handbook, full pagewidth 135° 45° 3 GHz 40 MHz 180° 0.5 0.4 0.3 0.2 0° 0.1 −135° −45° −90° MRA696 VCE = 8 V; IC = 40 mA. Fig.16 Common emitter reverse transmission coefficient (s12). 90° handbook, full pagewidth 1.0 1 135° 0.8 45° 2 0.5 0.6 0.2 0.4 5 0.2 180° 0.2 0 0.5 1 2 5 0° 0 3 GHz 40 MHz 0.2 −135° 0.5 2 5 −45° 1 MRA697 VCE = 8 V; IC = 40 mA. Zo = 50 Ω. −90° Fig.17 Common emitter output reflection coefficient (s22). 2000 May 30 10 1.0 Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFR540 PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT23 D E B A X HE v M A 3 Q A A1 1 2 e1 bp c w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp c D E e e1 HE Lp Q v w mm 1.1 0.9 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 1.9 0.95 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.1 OUTLINE VERSION SOT23 2000 May 30 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 97-02-28 99-09-13 TO-236AB 11 Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFR540 DATA SHEET STATUS DATA SHEET STATUS PRODUCT STATUS DEFINITIONS (1) Objective specification Development This data sheet contains the design target or goal specifications for product development. Specification may change in any manner without notice. Preliminary specification Qualification This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. Product specification Production This data sheet contains final specifications. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. Note 1. Please consult the most recently issued data sheet before initiating or completing a design. DEFINITIONS DISCLAIMERS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Right to make changes Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 2000 May 30 12 Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFR540 NOTES 2000 May 30 13 Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFR540 NOTES 2000 May 30 14 Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFR540 NOTES 2000 May 30 15 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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