DISCRETE SEMICONDUCTORS DATA SHEET BFR93AW NPN 5 GHz wideband transistor Product specification Supersedes data of November 1992 1995 Sep 18 NXP Semiconductors Product specification NPN 5 GHz wideband transistor BFR93AW FEATURES DESCRIPTION High power gain Silicon NPN transistor encapsulated in a plastic SOT323 (S-mini) package. The BFR93AW uses the same crystal as the SOT23 version, BFR93A. Gold metallization ensures excellent reliability SOT323 (S-mini) package. PINNING APPLICATIONS It is designed for use in RF amplifiers, mixers and oscillators with signal frequencies up to 1 GHz. 3 handbook, 2 columns 1 PIN DESCRIPTION 1 base 2 emitter 3 collector 2 Top view MBC870 Marking code: R2. Fig.1 SOT323 QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VCBO collector-base voltage open emitter 15 V VCEO collector-emitter voltage open base 12 V IC collector current (DC) 35 mA Ptot total power dissipation up to Ts = 93 C; note 1 300 mW hFE DC current gain IC = 30 mA; VCE = 5 V 40 90 Cre feedback capacitance IC = 0; VCE = 5 V; f = 1 MHz; Tamb = 25 C 0.6 fT transition frequency IC = 30 mA; VCE = 5 V; f = 500 MHz 4 5 GHz GUM maximum unilateral power gain IC = 30 mA; VCE = 8 V; f = 1 GHz; Tamb = 25 C 13 dB IC = 30 mA; VCE = 8 V; f = 2 GHz; Tamb = 25 C 8 dB IC = 5 mA; VCE = 8 V; f = 1 GHz; s = opt 1.5 dB 150 C F noise figure Tj junction temperature Note 1. Ts is the temperature at the soldering point of the collector pin. 1995 Sep 18 2 pF NXP Semiconductors Product specification NPN 5 GHz wideband transistor BFR93AW LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITION MIN. MAX. UNIT VCBO collector-base voltage open emitter 15 V VCEO collector-emitter voltage open base 12 V VEBO emitter-base voltage open collector 2 V IC collector current (DC) 35 mA Ptot total power dissipation 300 mW Tstg storage temperature 65 +150 C Tj junction temperature 150 C up to Ts = 93 C; see Fig.2; note 1 THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITION thermal resistance from junction to soldering point Rth j-s up to Ts = 93 C; note 1 Note to the Limiting values and Thermal characteristics 1. Ts is the temperature at the soldering point of the collector pin. MLB540 400 P tot (mW) 300 200 100 0 0 50 100 150 200 T s ( o C) Fig.2 Power derating curve. 1995 Sep 18 3 VALUE UNIT 190 K/W NXP Semiconductors Product specification NPN 5 GHz wideband transistor BFR93AW CHARACTERISTICS Tj = 25 C (unless otherwise specified). SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT ICBO collector leakage current IE = 0; VCB = 5 V 50 hFE DC current gain IC = 30 mA; VCE = 5 V 40 90 Cc collector capacitance IE = ie = 0; VCB = 5 V; f = 1 MHz 0.7 pF Ce emitter capacitance IC = ic = 0; VEB = 0.5 V; f = 1 MHz 2.3 pF Cre feedback capacitance IC = 0; VCE = 5 V; f = 1 MHz 0.6 pF fT transition frequency IC = 30 mA; VCE = 5 V; f = 500 MHz 4 5 GHz GUM maximum unilateral power gain; note 1 IC = 30 mA; VCE = 8 V; f = 1 GHz; Tamb = 25 C 13 dB IC = 30 mA; VCE = 8 V; f = 2 GHz; Tamb = 25 C 8 dB IC = 5 mA; VCE = 8 V; f = 1 GHz; s = opt 1.5 dB IC = 5 mA; VCE = 8 V; f = 2 GHz; s = opt 2.1 dB F noise figure Note nA s 21 2 1. GUM is the maximum unilateral power gain, assuming s12 is zero and G UM = 10 log -------------------------------------------------------dB. 1 – s 11 2 1 – s 22 2 1995 Sep 18 4 NXP Semiconductors Product specification NPN 5 GHz wideband transistor BFR93AW MBG203 MCD087 120 1 handbook, halfpage Cre (pF) h FE 0.8 80 0.6 0.4 40 0.2 0 0 0 10 20 IC (mA) 0 30 8 12 VCB (V) 16 IC = 0; f = 1 MHz. VCE = 5 V. Fig.3 4 DC current gain as a function of collector current; typical values. Fig.4 MBG204 6 fT (GHz) 4 2 0 1 10 IC (mA) 10 2 VCE = 5 V; f = 500 MHz; Tamb = 25 C. Fig.5 1995 Sep 18 Transition frequency as a function of collector current; typical values. 5 Feedback capacitance as a function of collector-base voltage; typical values. NXP Semiconductors Product specification NPN 5 GHz wideband transistor BFR93AW MBG202 30 MBG201 30 gain (dB) gain (dB) MSG 20 20 GUM MSG GUM 10 10 0 0 10 20 0 30 IC (mA) VCE = 8 V; f = 500 MHz. Fig.6 Gain as a function of collector current; typical values. Fig.7 MBG200 50 40 30 10 20 IC (mA) 30 VCE = 8 V; f = 1 GHz. Gain as a function of collector current; typical values. MBG207 50 handbook, halfpage handbook, halfpage gain (dB) 0 gain (dB) GUM 40 30 MSG GUM MSG 20 20 10 10 Gmax Gmax 0 0 10 10 2 10 3 f (MHz) 10 4 102 10 VCE = 8 V; IC = 10 mA. VCE = 8 V; IC = 30 mA. Fig.8 Fig.9 1995 Sep 18 Gain as a function of frequency; typical values. 6 103 f (MHz) 104 Gain as a function of frequency; typical values. NXP Semiconductors Product specification NPN 5 GHz wideband transistor BFR93AW MGC901 6 MGC900 6 handbook, halfpage handbook, halfpage F (dB) F (dB) 4 4 f = 2 GHz IC = 30 mA 1 GHz 10 mA 500 MHz 2 0 1 10 0 10 2 10 2 IC (mA) 5 mA 2 VCE = 8 V. 10 3 10 4 VCE = 8 V. Fig.10 Minimum noise figure as a function of collector current; typical values. Fig.11 Minimum noise figure as a function of collector current; typical values. 90 o 1.0 handbook, full pagewidth 1 135 o 45 o 2 0.5 0.8 0.6 0.2 180 o 0.2 0 0.5 1 0.4 5 F min = 1.4 dB Γ opt 0.2 2 5 F = 2 dB 0.2 0o 0 5 F = 3 dB F = 4 dB 0.5 135 o 2 45 o 1 MGC879 90 o f = 500 MHz; VCE = 8 V; IC = 10 mA; Zo = 50 Fig.12 Common emitter noise figure circles; typical values. 1995 Sep 18 f (MHz) 7 1.0 NXP Semiconductors Product specification NPN 5 GHz wideband transistor BFR93AW 90 o handbook, full pagewidth 1.0 1 135 o 45 o 2 0.5 0.8 0.6 0.2 G max = 13.8 dB Γ ms 180 o F min = 2 dB Γ opt 0.5 1 0.2 0 0.4 5 0.2 2 5 0o 0 G = 13 dB F = 2.5 dB 0.2 G = 12 dB 5 F = 3 dB G = 11 dB F = 4 dB 0.5 2 135 o 45 o 1 MGC880 1.0 90 o f = 1 GHz; VCE = 8 V; IC = 10 mA; Zo = 50 Fig.13 Common emitter noise figure circles; typical values. 90 o handbook, full pagewidth 1.0 1 135 o 45 o 2 0.5 0.8 0.6 (4) 0.2 0.4 5 0.2 (3) 180 o (2) 0.5 0.2 0 (5) 1 2 5 opt; Fmin = 3 dB. F = 3.5 dB. F = 4 dB. F = 5 dB. ms; Gmax = 8.1 dB. G = 7 dB. G = 6 dB. G = 5 dB. 5 (6) (7) (8) 0.5 2 135 o 45 o 1 MGC881 90 o f = 2 GHz; VCE = 8 V; IC = 10 mA; Zo = 50 Fig.14 Common emitter noise figure circles; typical values. 1995 Sep 18 0 (1) 0.2 (1) (2) (3) (4) (5) (6) (7) (8) 0o 8 1.0 NXP Semiconductors Product specification NPN 5 GHz wideband transistor BFR93AW 90 o handbook, full pagewidth 1.0 1 135 o 45 o 2 0.5 0.8 0.6 0.2 0.4 5 3 GHz 0.2 180 o 0.2 0 0.5 1 2 5 0o 0 40 MHz 5 0.2 0.5 2 135 o 45 o 1 MGC878 1.0 90 o VCE = 8 V; IC = 30 mA; Zo = 50 . Fig.15 Common emitter input reflection coefficient (s11); typical values. 90 o handbook, full pagewidth 135 180 o o 45 3 GHz 40 MHz 50 40 135 30 20 o 0o 10 o 45 90 o o MGC898 VCE = 8 V; IC = 30 mA. Fig.16 Common emitter forward transmission coefficient (s21); typical values. 1995 Sep 18 9 NXP Semiconductors Product specification NPN 5 GHz wideband transistor BFR93AW 90 o handbook, full pagewidth 135 o 45 o 3 GHz 180 o 40 MHz 0.5 0.4 0.3 0.2 0o 0.1 135 o 45 o 90 o MGC899 VCE = 8 V; IC = 30 mA. Fig.17 Common emitter reverse transmission coefficient (s12); typical values. 90 o 1.0 handbook, full pagewidth 1 135 o 45 o 2 0.5 0.8 0.6 0.2 0.4 5 0.2 180 o 0.2 0 0.5 1 2 5 0o 0 40 MHz 3 GHz 0.2 0.5 5 2 135 o 45 o 1 MGC877 1.0 90 o VCE = 8 V; IC = 30 mA; Zo = 50 . Fig.18 Common emitter output reflection coefficient (s22); typical values. 1995 Sep 18 10 NXP Semiconductors Product specification NPN 5 GHz wideband transistor BFR93AW PACKAGE OUTLINE Plastic surface-mounted package; 3 leads SOT323 D E B A X HE y v M A 3 Q A A1 c 1 2 e1 bp Lp w M B e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp c D E e e1 HE Lp Q v w mm 1.1 0.8 0.1 0.4 0.3 0.25 0.10 2.2 1.8 1.35 1.15 1.3 0.65 2.2 2.0 0.45 0.15 0.23 0.13 0.2 0.2 OUTLINE VERSION SOT323 1995 Sep 18 REFERENCES IEC JEDEC JEITA SC-70 11 EUROPEAN PROJECTION ISSUE DATE 04-11-04 06-03-16 NXP Semiconductors Product specification NPN 5 GHz wideband transistor BFR93AW DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. Right to make changes NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. DEFINITIONS Product specification The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet. Suitability for use NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. DISCLAIMERS Limited warranty and liability Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Applications Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. 1995 Sep 18 12 NXP Semiconductors Product specification NPN 5 GHz wideband transistor BFR93AW Export control This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). 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Limiting values Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. 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In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. No offer to sell or license Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 1995 Sep 18 13 NXP Semiconductors provides High Performance Mixed Signal and Standard Product solutions that leverage its leading RF, Analog, Power Management, Interface, Security and Digital Processing expertise Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: [email protected] © NXP B.V. 2010 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands R77/02/pp14 Date of release: 1995 Sep 18