PHILIPS BFR93AW

DISCRETE SEMICONDUCTORS
DATA SHEET
BFR93AW
NPN 5 GHz wideband transistor
Product specification
Supersedes data of November 1992
File under Discrete Semiconductors, SC14
1995 Sep 18
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR93AW
FEATURES
DESCRIPTION
• High power gain
Silicon NPN transistor encapsulated
in a plastic SOT323 (S-mini) package.
The BFR93AW uses the same crystal
as the SOT23 version, BFR93A.
• Gold metallization ensures
excellent reliability
• SOT323 (S-mini) package.
handbook, 2 columns
PINNING
APPLICATIONS
It is designed for use in RF amplifiers,
mixers and oscillators with signal
frequencies up to 1 GHz.
PIN
DESCRIPTION
1
base
2
emitter
3
collector
3
1
2
Top view
MBC870
Marking code: R2.
Fig.1 SOT323
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
−
15
V
VCEO
collector-emitter voltage
open base
−
−
12
V
IC
collector current (DC)
−
−
35
mA
Ptot
total power dissipation
up to Ts = 93 °C; note 1
−
−
300
mW
hFE
DC current gain
IC = 30 mA; VCE = 5 V
40
90
−
Cre
feedback capacitance
IC = 0; VCE = 5 V; f = 1 MHz;
Tamb = 25 °C
−
0.6
−
pF
fT
transition frequency
IC = 30 mA; VCE = 5 V; f = 500 MHz
4
5
−
GHz
GUM
maximum unilateral power
gain
IC = 30 mA; VCE = 8 V; f = 1 GHz;
Tamb = 25 °C
−
13
−
dB
IC = 30 mA; VCE = 8 V; f = 2 GHz;
Tamb = 25 °C
−
8
−
dB
IC = 5 mA; VCE = 8 V; f = 1 GHz;
Γs = Γopt
−
1.5
−
dB
−
−
150
°C
F
noise figure
Tj
junction temperature
Note
1. Ts is the temperature at the soldering point of the collector pin.
1995 Sep 18
2
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR93AW
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITION
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
15
V
VCEO
collector-emitter voltage
open base
−
12
V
VEBO
emitter-base voltage
open collector
−
2
V
IC
collector current (DC)
−
35
mA
Ptot
total power dissipation
−
300
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
up to Ts = 93 °C; see Fig.2; note 1
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITION
thermal resistance from junction to
soldering point
Rth j-s
up to Ts = 93 °C; note 1
Note to the Limiting values and Thermal characteristics
1. Ts is the temperature at the soldering point of the collector pin.
MLB540
400
P tot
(mW)
300
200
100
0
0
50
100
150
200
T s ( o C)
Fig.2 Power derating curve.
1995 Sep 18
3
VALUE
UNIT
190
K/W
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR93AW
CHARACTERISTICS
Tj = 25 °C (unless otherwise specified).
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
ICBO
collector leakage current
IE = 0; VCB = 5 V
−
−
50
UNIT
nA
hFE
DC current gain
IC = 30 mA; VCE = 5 V
40
90
−
Cc
collector capacitance
IE = ie = 0; VCB = 5 V; f = 1 MHz
−
0.7
−
pF
Ce
emitter capacitance
IC = ic = 0; VEB = 0.5 V;
f = 1 MHz
−
2.3
−
pF
Cre
feedback capacitance
IC = 0; VCE = 5 V; f = 1 MHz
−
0.6
−
pF
fT
transition frequency
IC = 30 mA; VCE = 5 V;
f = 500 MHz
4
5
−
GHz
GUM
maximum unilateral power
gain; note 1
IC = 30 mA; VCE = 8 V;
f = 1 GHz; Tamb = 25 °C
−
13
−
dB
IC = 30 mA; VCE = 8 V;
f = 2 GHz; Tamb = 25 °C
−
8
−
dB
IC = 5 mA; VCE = 8 V;
f = 1 GHz; Γs = Γopt
−
1.5
−
dB
IC = 5 mA; VCE = 8 V;
f = 2 GHz; Γs = Γopt
−
2.1
−
dB
F
noise figure
Note
s 21 2
dB.
1. GUM is the maximum unilateral power gain, assuming s12 is zero and G UM = 10 log -----------------------------------------------------------( 1 – s 11 2 ) ( 1 – s 22 2 )
1995 Sep 18
4
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR93AW
MCD087
120
MBG203
1
handbook, halfpage
Cre
(pF)
h FE
0.8
80
0.6
0.4
40
0.2
0
0
0
10
20
IC (mA)
8
12
VCB (V)
16
IC = 0; f = 1 MHz.
VCE = 5 V.
Fig.3
4
0
30
DC current gain as a function of collector
current; typical values.
Fig.4
MBG204
6
fT
(GHz)
4
2
0
1
10
IC (mA)
10 2
VCE = 5 V; f = 500 MHz; Tamb = 25 °C.
Fig.5
1995 Sep 18
Transition frequency as a function
of collector current; typical values.
5
Feedback capacitance as a function of
collector-base voltage; typical values.
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR93AW
MBG202
30
MBG201
30
gain
(dB)
gain
(dB)
MSG
20
20
GUM
MSG
10
GUM
10
0
10
0
20
0
30
IC (mA)
VCE = 8 V; f = 500 MHz.
Fig.6
Gain as a function of collector current;
typical values.
Fig.7
MBG200
50
40
30
20
IC (mA)
30
VCE = 8 V; f = 1 GHz.
Gain as a function of collector current;
typical values.
MGB207
50
handbook, halfpage
gain
(dB)
10
0
handbook, halfpage
gain
(dB)
GUM
40
30
MSG
20
GUM
MSG
20
10
10
Gmax
Gmax
0
0
10
10
2
10
3
f (MHz)
10
4
10
10
VCE = 8 V; IC = 10 mA.
VCE = 8 V; IC = 30 mA.
Fig.8
Fig.9
1995 Sep 18
Gain as a function of frequency;
typical values.
6
2
10
3
f (MHz)
10
Gain as a function of frequency;
typical values.
4
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR93AW
MGC901
6
MGC900
6
handbook, halfpage
handbook, halfpage
F
(dB)
F
(dB)
4
4
f = 2 GHz
IC = 30 mA
1 GHz
10 mA
500 MHz
2
0
1
10
0
10 2
10 2
IC (mA)
5 mA
2
VCE = 8 V.
10 3
10 4
VCE = 8 V.
Fig.10 Minimum noise figure as a function of
collector current; typical values.
Fig.11 Minimum noise figure as a function of
collector current; typical values.
90 o
1.0
handbook, full pagewidth
1
135 o
45 o
2
0.5
0.8
0.6
0.2
180 o
0.2
0
0.5
1
0.4
5
F min = 1.4 dB
Γ opt
0.2
2
5
F = 2 dB
0.2
0o
0
5
F = 3 dB
F = 4 dB
0.5
135 o
2
45 o
1
MGC879
90 o
f = 500 MHz; VCE = 8 V; IC = 10 mA; Zo = 50 Ω.
Fig.12 Common emitter noise figure circles; typical values.
1995 Sep 18
f (MHz)
7
1.0
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR93AW
90 o
handbook, full pagewidth
1.0
1
135 o
45 o
2
0.5
0.8
0.6
0.2
G max = 13.8 dB
Γ ms
180 o
F min = 2 dB
Γ opt
0.5
1
0.2
0
0.4
5
0.2
2
5
0o
0
G = 13 dB
F = 2.5 dB
0.2
G = 12 dB
5
F = 3 dB
G = 11 dB
F = 4 dB
0.5
2
135 o
45 o
1
MGC880
1.0
90 o
f = 1 GHz; VCE = 8 V; IC = 10 mA; Zo = 50 Ω.
Fig.13 Common emitter noise figure circles; typical values.
90 o
handbook, full pagewidth
1.0
1
135 o
45 o
2
0.5
0.8
0.6
(4)
0.2
0.4
5
0.2
(3)
180 o
(2) 0.5
0.2
0
(5)
1
2
5
5
(6)
Γopt; Fmin = 3 dB.
F = 3.5 dB.
F = 4 dB.
F = 5 dB.
(7)
(8)
0.5
2
135 o
(5) Γms; Gmax = 8.1 dB.
(6) G = 7 dB.
45 o
1
MGC881
(7) G = 6 dB.
(8) G = 5 dB.
f = 2 GHz; VCE = 8 V; IC = 10 mA; Zo = 50 Ω.
90 o
Fig.14 Common emitter noise figure circles; typical values.
1995 Sep 18
0
(1)
0.2
(1)
(2)
(3)
(4)
0o
8
1.0
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR93AW
90 o
handbook, full pagewidth
1.0
1
135 o
45 o
2
0.5
0.8
0.6
0.2
0.4
5
3 GHz
0.2
180 o
0.2
0
0.5
1
2
5
0o
0
40 MHz
5
0.2
0.5
2
135 o
45 o
1
MGC878
1.0
90 o
VCE = 8 V; IC = 30 mA; Zo = 50 Ω.
Fig.15 Common emitter input reflection coefficient (s11); typical values.
90 o
handbook, full pagewidth
135 o
180 o
45 o
3 GHz
40 MHz
50
40
30
20
0o
10
135 o
45 o
90 o
MGC898
VCE = 8 V; IC = 30 mA.
Fig.16 Common emitter forward transmission coefficient (s21); typical values.
1995 Sep 18
9
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR93AW
90 o
handbook, full pagewidth
135 o
45 o
3 GHz
180 o
40 MHz
0.5
0.4
0.3
0.2
0o
0.1
135 o
45 o
90 o
MGC899
VCE = 8 V; IC = 30 mA.
Fig.17 Common emitter reverse transmission coefficient (s12); typical values.
90 o
1.0
handbook, full pagewidth
1
135 o
45 o
2
0.5
0.8
0.6
0.2
0.4
5
0.2
180 o
0.2
0
0.5
1
2
5
0o
0
40 MHz
3 GHz
0.2
0.5
5
2
135 o
45 o
1
MGC877
1.0
90 o
VCE = 8 V; IC = 30 mA; Zo = 50 Ω.
Fig.18 Common emitter output reflection coefficient (s22); typical values.
1995 Sep 18
10
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR93AW
PACKAGE OUTLINE
2.2
1.8
handbook, full pagewidth
1.35
1.15
A
B
X
0.25
0.10
2.2
2.0
0.2 M B
3
0.2
1.0
0.8 0.1
0.0
0.40
0.30
1
2
0.2 M A
0.65
detail X
1.3
Dimensions in mm.
Fig.19 SOT323.
1995 Sep 18
1.1
max
11
0.3
0.1
MBC871
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR93AW
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1995 Sep 18
12