DISCRETE SEMICONDUCTORS DATA SHEET BFR93AW NPN 5 GHz wideband transistor Product specification Supersedes data of November 1992 File under Discrete Semiconductors, SC14 1995 Sep 18 Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR93AW FEATURES DESCRIPTION • High power gain Silicon NPN transistor encapsulated in a plastic SOT323 (S-mini) package. The BFR93AW uses the same crystal as the SOT23 version, BFR93A. • Gold metallization ensures excellent reliability • SOT323 (S-mini) package. handbook, 2 columns PINNING APPLICATIONS It is designed for use in RF amplifiers, mixers and oscillators with signal frequencies up to 1 GHz. PIN DESCRIPTION 1 base 2 emitter 3 collector 3 1 2 Top view MBC870 Marking code: R2. Fig.1 SOT323 QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VCBO collector-base voltage open emitter − − 15 V VCEO collector-emitter voltage open base − − 12 V IC collector current (DC) − − 35 mA Ptot total power dissipation up to Ts = 93 °C; note 1 − − 300 mW hFE DC current gain IC = 30 mA; VCE = 5 V 40 90 − Cre feedback capacitance IC = 0; VCE = 5 V; f = 1 MHz; Tamb = 25 °C − 0.6 − pF fT transition frequency IC = 30 mA; VCE = 5 V; f = 500 MHz 4 5 − GHz GUM maximum unilateral power gain IC = 30 mA; VCE = 8 V; f = 1 GHz; Tamb = 25 °C − 13 − dB IC = 30 mA; VCE = 8 V; f = 2 GHz; Tamb = 25 °C − 8 − dB IC = 5 mA; VCE = 8 V; f = 1 GHz; Γs = Γopt − 1.5 − dB − − 150 °C F noise figure Tj junction temperature Note 1. Ts is the temperature at the soldering point of the collector pin. 1995 Sep 18 2 Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR93AW LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITION MIN. MAX. UNIT VCBO collector-base voltage open emitter − 15 V VCEO collector-emitter voltage open base − 12 V VEBO emitter-base voltage open collector − 2 V IC collector current (DC) − 35 mA Ptot total power dissipation − 300 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C up to Ts = 93 °C; see Fig.2; note 1 THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITION thermal resistance from junction to soldering point Rth j-s up to Ts = 93 °C; note 1 Note to the Limiting values and Thermal characteristics 1. Ts is the temperature at the soldering point of the collector pin. MLB540 400 P tot (mW) 300 200 100 0 0 50 100 150 200 T s ( o C) Fig.2 Power derating curve. 1995 Sep 18 3 VALUE UNIT 190 K/W Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR93AW CHARACTERISTICS Tj = 25 °C (unless otherwise specified). SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. ICBO collector leakage current IE = 0; VCB = 5 V − − 50 UNIT nA hFE DC current gain IC = 30 mA; VCE = 5 V 40 90 − Cc collector capacitance IE = ie = 0; VCB = 5 V; f = 1 MHz − 0.7 − pF Ce emitter capacitance IC = ic = 0; VEB = 0.5 V; f = 1 MHz − 2.3 − pF Cre feedback capacitance IC = 0; VCE = 5 V; f = 1 MHz − 0.6 − pF fT transition frequency IC = 30 mA; VCE = 5 V; f = 500 MHz 4 5 − GHz GUM maximum unilateral power gain; note 1 IC = 30 mA; VCE = 8 V; f = 1 GHz; Tamb = 25 °C − 13 − dB IC = 30 mA; VCE = 8 V; f = 2 GHz; Tamb = 25 °C − 8 − dB IC = 5 mA; VCE = 8 V; f = 1 GHz; Γs = Γopt − 1.5 − dB IC = 5 mA; VCE = 8 V; f = 2 GHz; Γs = Γopt − 2.1 − dB F noise figure Note s 21 2 dB. 1. GUM is the maximum unilateral power gain, assuming s12 is zero and G UM = 10 log -----------------------------------------------------------( 1 – s 11 2 ) ( 1 – s 22 2 ) 1995 Sep 18 4 Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR93AW MCD087 120 MBG203 1 handbook, halfpage Cre (pF) h FE 0.8 80 0.6 0.4 40 0.2 0 0 0 10 20 IC (mA) 8 12 VCB (V) 16 IC = 0; f = 1 MHz. VCE = 5 V. Fig.3 4 0 30 DC current gain as a function of collector current; typical values. Fig.4 MBG204 6 fT (GHz) 4 2 0 1 10 IC (mA) 10 2 VCE = 5 V; f = 500 MHz; Tamb = 25 °C. Fig.5 1995 Sep 18 Transition frequency as a function of collector current; typical values. 5 Feedback capacitance as a function of collector-base voltage; typical values. Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR93AW MBG202 30 MBG201 30 gain (dB) gain (dB) MSG 20 20 GUM MSG 10 GUM 10 0 10 0 20 0 30 IC (mA) VCE = 8 V; f = 500 MHz. Fig.6 Gain as a function of collector current; typical values. Fig.7 MBG200 50 40 30 20 IC (mA) 30 VCE = 8 V; f = 1 GHz. Gain as a function of collector current; typical values. MGB207 50 handbook, halfpage gain (dB) 10 0 handbook, halfpage gain (dB) GUM 40 30 MSG 20 GUM MSG 20 10 10 Gmax Gmax 0 0 10 10 2 10 3 f (MHz) 10 4 10 10 VCE = 8 V; IC = 10 mA. VCE = 8 V; IC = 30 mA. Fig.8 Fig.9 1995 Sep 18 Gain as a function of frequency; typical values. 6 2 10 3 f (MHz) 10 Gain as a function of frequency; typical values. 4 Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR93AW MGC901 6 MGC900 6 handbook, halfpage handbook, halfpage F (dB) F (dB) 4 4 f = 2 GHz IC = 30 mA 1 GHz 10 mA 500 MHz 2 0 1 10 0 10 2 10 2 IC (mA) 5 mA 2 VCE = 8 V. 10 3 10 4 VCE = 8 V. Fig.10 Minimum noise figure as a function of collector current; typical values. Fig.11 Minimum noise figure as a function of collector current; typical values. 90 o 1.0 handbook, full pagewidth 1 135 o 45 o 2 0.5 0.8 0.6 0.2 180 o 0.2 0 0.5 1 0.4 5 F min = 1.4 dB Γ opt 0.2 2 5 F = 2 dB 0.2 0o 0 5 F = 3 dB F = 4 dB 0.5 135 o 2 45 o 1 MGC879 90 o f = 500 MHz; VCE = 8 V; IC = 10 mA; Zo = 50 Ω. Fig.12 Common emitter noise figure circles; typical values. 1995 Sep 18 f (MHz) 7 1.0 Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR93AW 90 o handbook, full pagewidth 1.0 1 135 o 45 o 2 0.5 0.8 0.6 0.2 G max = 13.8 dB Γ ms 180 o F min = 2 dB Γ opt 0.5 1 0.2 0 0.4 5 0.2 2 5 0o 0 G = 13 dB F = 2.5 dB 0.2 G = 12 dB 5 F = 3 dB G = 11 dB F = 4 dB 0.5 2 135 o 45 o 1 MGC880 1.0 90 o f = 1 GHz; VCE = 8 V; IC = 10 mA; Zo = 50 Ω. Fig.13 Common emitter noise figure circles; typical values. 90 o handbook, full pagewidth 1.0 1 135 o 45 o 2 0.5 0.8 0.6 (4) 0.2 0.4 5 0.2 (3) 180 o (2) 0.5 0.2 0 (5) 1 2 5 5 (6) Γopt; Fmin = 3 dB. F = 3.5 dB. F = 4 dB. F = 5 dB. (7) (8) 0.5 2 135 o (5) Γms; Gmax = 8.1 dB. (6) G = 7 dB. 45 o 1 MGC881 (7) G = 6 dB. (8) G = 5 dB. f = 2 GHz; VCE = 8 V; IC = 10 mA; Zo = 50 Ω. 90 o Fig.14 Common emitter noise figure circles; typical values. 1995 Sep 18 0 (1) 0.2 (1) (2) (3) (4) 0o 8 1.0 Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR93AW 90 o handbook, full pagewidth 1.0 1 135 o 45 o 2 0.5 0.8 0.6 0.2 0.4 5 3 GHz 0.2 180 o 0.2 0 0.5 1 2 5 0o 0 40 MHz 5 0.2 0.5 2 135 o 45 o 1 MGC878 1.0 90 o VCE = 8 V; IC = 30 mA; Zo = 50 Ω. Fig.15 Common emitter input reflection coefficient (s11); typical values. 90 o handbook, full pagewidth 135 o 180 o 45 o 3 GHz 40 MHz 50 40 30 20 0o 10 135 o 45 o 90 o MGC898 VCE = 8 V; IC = 30 mA. Fig.16 Common emitter forward transmission coefficient (s21); typical values. 1995 Sep 18 9 Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR93AW 90 o handbook, full pagewidth 135 o 45 o 3 GHz 180 o 40 MHz 0.5 0.4 0.3 0.2 0o 0.1 135 o 45 o 90 o MGC899 VCE = 8 V; IC = 30 mA. Fig.17 Common emitter reverse transmission coefficient (s12); typical values. 90 o 1.0 handbook, full pagewidth 1 135 o 45 o 2 0.5 0.8 0.6 0.2 0.4 5 0.2 180 o 0.2 0 0.5 1 2 5 0o 0 40 MHz 3 GHz 0.2 0.5 5 2 135 o 45 o 1 MGC877 1.0 90 o VCE = 8 V; IC = 30 mA; Zo = 50 Ω. Fig.18 Common emitter output reflection coefficient (s22); typical values. 1995 Sep 18 10 Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR93AW PACKAGE OUTLINE 2.2 1.8 handbook, full pagewidth 1.35 1.15 A B X 0.25 0.10 2.2 2.0 0.2 M B 3 0.2 1.0 0.8 0.1 0.0 0.40 0.30 1 2 0.2 M A 0.65 detail X 1.3 Dimensions in mm. Fig.19 SOT323. 1995 Sep 18 1.1 max 11 0.3 0.1 MBC871 Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR93AW DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1995 Sep 18 12