Data Sheet

DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D102
BFS540
NPN 9 GHz wideband transistor
Product specification
Supersedes data of 1997 Dec 05
2000 May 30
NXP Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFS540
FEATURES
DESCRIPTION
 High power gain
NPN transistor in a SOT323 plastic
package.
 Low noise figure
 Gold metallization ensures
excellent reliability
3
handbook, 2 columns
 High transition frequency
PINNING
PIN
 SOT323 package.
1
APPLICATIONS
DESCRIPTION
1
base
2
Top view
2
emitter
3
collector
RF wideband amplifier applications
such as satellite TV systems and RF
portable communication equipment
with signal frequencies up to 2 GHz.
MBC870
Marking code: N4.
Fig.1 SOT323.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
VCBO
collector-base voltage
open emitter


20
open base


15
V


120
mA
mW
VCEO
collector-emitter voltage
IC
DC collector current
Ptot
total power dissipation
Ts  80 C; note 1


500
hFE
DC current gain
IC = 40 mA; VCE = 8 V; Tj = 25 C
100
120
250
fT
transition frequency
IC = 40 mA; VCE = 8 V; f = 1 GHz;
Tamb = 25 C

9

GHz
GUM
maximum unilateral power gain
IC = 40 mA; VCE = 8 V; f = 900 MHz;
Tamb = 25 C

14

dB
F
noise figure
IC = 10 mA; VCE = 8 V; f = 900 MHz;
Tamb = 25 C

1.3
1.7
dB
Note
1. Ts is the temperature at the soldering point of the collector tab.
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter

20
V
VCES
collector-emitter voltage
RBE = 0

15
V
open collector

2.5
V

120
mA

500
mW
VEBO
emitter-base voltage
IC
DC collector current
Ptot
total power dissipation
Tstg
storage temperature
65
150
C
Tj
junction temperature

175
C
Ts  80 C; note 1
Note
1. Ts is the temperature at the soldering point of the collector tab.
2000 May 30
2
NXP Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFS540
THERMAL CHARACTERISTICS
SYMBOL
Rth j-s
PARAMETER
CONDITIONS
thermal resistance from junction to soldering point
VALUE
UNIT
190
K/W
Ts  80 C; note 1
Note
1. Ts is the temperature at the soldering point of the collector tab.
CHARACTERISTICS
Tj = 25 C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
ICBO
collector cut-off current
IE = 0; VCE = 8 V


50
hFE
DC current gain
IC = 40 mA; VCE = 8 V
100
120
250
Ce
emitter capacitance
IC = ic = 0; VEB = 0.5 V; f = 1 MHz

2

pF
nA
Cc
collector capacitance
IE = ie = 0; VCB = 8 V; f = 1 MHz

0.9

pF
Cre
feedback capacitance
IC = 0; VCB = 8 V; f = 1 MHz

0.6

pF
fT
transition frequency
IC = 40 mA; VCE = 8 V; f = 1 GHz;
Tamb = 25 C

9

GHz
GUM
maximum unilateral power
gain (note 1)
IC = 40 mA; VCE = 8 V; f = 900 MHz;
Tamb = 25 C

14

dB
IC = 40 mA; VCE = 8 V; f = 2 GHz;
Tamb = 25 C

8

dB
s212
insertion power gain
IC = 40 mA; VCE = 8 V; f = 900 MHz;
Tamb = 25 C
12
13

dB
F
noise figure
s = opt; IC = 10 mA; VCE = 8 V;
f = 900 MHz; Tamb = 25 C

1.3
1.8
dB
s = opt; IC = 40 mA; VCE = 8 V;
f = 900 MHz; Tamb = 25 C

1.9
2.4
dB
s = opt; IC = 10 mA; VCE = 8 V;
f = 2 GHz; Tamb = 25 C

2.1

dB
PL1
output power at 1 dB gain
compression
Ic = 40 mA; VCE = 8 V; RL = 50 ;
f = 900 MHz; Tamb = 25 C

21

dBm
ITO
third order intercept point
note 2

34

dBm
Notes
1. GUM is the maximum unilateral power gain, assuming s12 is zero and
2
s 21
- dB.
G UM = 10 log ------------------------------------------------------2
2
 1 – s 11   1 – s 22 
2. IC = 40 mA; VCE = 8 V; RL = 50 ; f = 900 MHz; Tamb = 25 C;
fp = 900 MHz; fq = 902 MHz; measured at f(2pq) = 898 MHz and at f(2qp) = 904 MHz.
2000 May 30
3
NXP Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFS540
MRC008 - 1
400
handbook,
halfpage
MRC010
200
handbook, halfpage
P
tot
(mW)
h FE
300
150
200
100
100
50
0
0
50
100
150
0
10−2
200
T ( o C)
10−1
1
10
s
IC (mA)
102
VCE = 8 V; Tj = 25 C.
VCE  10 V.
Fig.3
DC current gain as a function of collector
current.
Fig.2 Power derating curve.
MRC001
1
MRC002
12
handbook, halfpage
handbook, halfpage
Cre
(pF)
fT
(GHz)
0.8
VCE = 8 V
8
0.6
4V
0.4
4
0.2
0
0
2
4
6
8
0
10
12
VCB (V)
1
10
IC = 0; f = 1 MHz.
f = 1 GHz; Tamb = 25 C.
Fig.4
Fig.5
Feedback capacitance as a function of
collector-base voltage.
2000 May 30
4
I C (mA)
102
Transition frequency as a function of
collector current.
NXP Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFS540
In Figs 6 to 9, GUM = maximum unilateral power gain;
MSG = maximum stable gain; Gmax = maximum available
gain.
MRC007
20
GUM
(dB)
MRC006
15
handbook, halfpage
handbook, halfpage
gain
(dB)
16
VCE = 8 V
4V
10
G max
12
GUM
8
5
4
0
0
10
20
30
0
40
50
IC (mA)
f = 900 MHz; Tamb = 25 C.
0
20
40
IC (mA)
60
VCE = 8 V; f = 2 GHz; Tamb = 25 C.
Fig.6
Maximum unilateral power gain as a
function of collector current.
Fig.7 Gain as a function of collector current.
MRC004
50
MRC005
50
gain
(dB)
handbook, halfpage
handbook, halfpage
gain
(dB)
40
40
G UM
G UM
30
30
MSG
MSG
20
20
G max
G max
10
10
0
10−2
10−1
1
f (GHz)
0
10−2
10
IC = 10 mA; VCE = 8 V; Tamb = 25 C.
1
f (GHz)
10
IC = 40 mA; VCE = 8 V; Tamb = 25 C.
Fig.8 Gain as a function of frequency.
2000 May 30
10−1
Fig.9 Gain as a function of frequency.
5
NXP Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFS540
MRC009
4
MRC003
4
handbook, halfpage
handbook, halfpage
F
(dB)
F
(dB)
IC =
40 mA
3
3
10 mA
f=
2 GHz
2
2
900 MHz
1
0
1
500 MHz
1
10
IC (mA)
0
10−1
102
1
f (GHz)
10
VCE = 8 V; Tamb = 25 C.
VCE = 8 V; Tamb = 25 C.
Fig.10 Minimum noise figure as a function of
collector current.
Fig.11 Minimum noise figure as a function of
frequency.
2000 May 30
6
NXP Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFS540
handbook, full pagewidth
90°
1.0
1
135°
pot. unst.
region
0.8
45°
2
0.5
0.6
0.2
0.4
5
Fmin = 1. 3 dB
0.2
ΓOPT
180°
0.2
0
0.5
1
2
5
0°
F = 1.5 dB
0
F = 2 dB
stability
circle
5
0.2
F = 3 dB
0.5
2
−135°
−45°
1
MRC079
IC = 10 mA; VCE = 8 V;
f = 900 MHz; Zo = 50 .
1.0
−90°
Fig.12 Noise circle.
90°
handbook, full pagewidth
1.0
1
135°
0.8
45°
2
0.5
0.6
0.2
F = 4 dB
0.4
5
F = 3 dB
180°
F = 2.5 dB
0.5
1
0.2
0
0.2
2
5
0°
0
ΓMS
Gmax = 8.7 dB
Fmin = 2. 1 dB
G = 8 dB ΓOPT
0.2
5
G = 7 dB
G = 6 dB
0.5
2
−135°
−45°
1
MRC080
IC = 10 mA; VCE = 8 V;
f = 2 GHz; Zo = 50 .
−90°
Fig.13 Noise circle.
2000 May 30
7
1.0
NXP Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFS540
90°
handbook, full pagewidth
1.0
1
135°
0.8
45°
2
0.5
0.6
3 GHz
0.2
0.4
5
0.2
180°
0.2
0
0.5
1
2
0.2
5
0°
5
40 MHz
0.5
2
−135°
0
−45°
1
MRC062
−90°
IC = 40 mA; VCE = 8 V;
Zo = 50 .
Fig.14 Common emitter input reflection coefficient (s11).
90°
handbook, full pagewidth
135°
45°
40 MHz
3 GHz
180°
50
40
30
20
0°
10
−135°
−45°
−90°
MRC063
IC = 40 mA; VCE = 8 V.
Fig.15 Common emitter forward transmission coefficient (s21).
2000 May 30
8
1.0
NXP Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFS540
90°
handbook, full pagewidth
135°
45°
3 GHz
40 MHz
180°
0.5
0.4
0.3
0.2
0°
0.1
−135°
−45°
−90°
MRC064
IC = 40 mA; VCE = 8 V.
Fig.16 Common emitter reverse transmission coefficient (s12).
90°
handbook, full pagewidth
1.0
1
135°
0.8
45°
2
0.5
0.6
0.2
0.4
5
0.2
180°
0.2
0
0.5
1
2
5
0°
0
3 GHz
40 MHz
5
0.2
0.5
2
−135°
−45°
1
MRC065
IC = 40 mA; VCE = 8 V;
Zo = 50 .
−90°
Fig.17 Common emitter output reflection coefficient (s22).
2000 May 30
9
1.0
NXP Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFS540
PACKAGE OUTLINE
Plastic surface-mounted package; 3 leads
SOT323
D
E
B
A
X
HE
y
v M A
3
Q
A
A1
c
1
2
e1
bp
Lp
w M B
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max
bp
c
D
E
e
e1
HE
Lp
Q
v
w
mm
1.1
0.8
0.1
0.4
0.3
0.25
0.10
2.2
1.8
1.35
1.15
1.3
0.65
2.2
2.0
0.45
0.15
0.23
0.13
0.2
0.2
OUTLINE
VERSION
SOT323
2000 May 30
REFERENCES
IEC
JEDEC
JEITA
SC-70
10
EUROPEAN
PROJECTION
ISSUE DATE
04-11-04
06-03-16
NXP Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFS540
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Qualification
This document contains data from the preliminary specification.
Product data sheet
Production
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
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reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
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provided in a Product data sheet shall define the
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Semiconductors and its customer, unless NXP
Semiconductors and customer have explicitly agreed
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However, NXP Semiconductors does not give any
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Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or
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Semiconductors product is suitable and fit for the
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associated with their applications and products.
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for any reason whatsoever, NXP Semiconductors’
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the products described herein shall be limited in
accordance with the Terms and conditions of commercial
sale of NXP Semiconductors.
2000 May 30
11
NXP Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFS540
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NXP Semiconductors does not accept any liability related
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Quick reference data  The Quick reference data is an
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Characteristics sections of this document, and as such is
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Non-automotive qualified products  Unless this data
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applications.
Limiting values  Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) will cause permanent damage to
the device. Limiting values are stress ratings only and
(proper) operation of the device at these or any other
conditions above those given in the Recommended
operating conditions section (if present) or the
Characteristics sections of this document is not warranted.
Constant or repeated exposure to limiting values will
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and use in automotive applications to automotive
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2000 May 30
12
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Printed in The Netherlands
R77/04/pp13
Date of release: 2000 May 30