Data Sheet

DISCRETE SEMICONDUCTORS
DATA SHEET
BFS520
NPN 9 GHz wideband transistor
Product specification
September 1995
NXP Semiconductors
Product specification
NPN 9 GHz wideband transistor
FEATURES
BFS520
 High transition frequency
It is intended for wideband
applications such as satellite TV
tuners, cellular phones, cordless
phones, pagers etc., with signal
frequencies up to 2 GHz.
 Gold metallization ensures
excellent reliability
PINNING
 High power gain
 Low noise figure
 SOT323 envelope.
PIN
DESCRIPTION
1
Code: N2
DESCRIPTION
NPN transistor in a plastic SOT323
envelope.
3
handbook, 2 columns
1
base
2
emitter
3
collector
2
Top view
MBC870
Fig.1 SOT323.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VCBO
collector-base voltage
open emitter


20
V
VCES
collector-emitter voltage
RBE = 0


15
V
IC
DC collector current


70
mA
Ptot
total power dissipation
up to Ts = 118 C; note 1


300
mW
hFE
DC current gain
IC = 20 mA; VCE = 6 V; Tj = 25 C
60
120
250
fT
transition frequency
IC = 20 mA; VCE = 6 V; f = 1 GHz;
Tamb = 25 C

9

GHz
GUM
maximum unilateral power gain
Ic = 20 mA; VCE = 6 V; f = 900 MHz;
Tamb = 25 C

15

dB
F
noise figure
Ic = 5 mA; VCE = 6 V; f = 900 MHz;
Tamb = 25 C

1.1
1.6
dB
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter

20
V
VCES
collector-emitter voltage
RBE = 0

15
V
VEBO
emitter-base voltage
open collector

2.5
V
IC
DC collector current

70
mA
Ptot
total power dissipation

300
mW
Tstg
storage temperature
65
150
C
Tj
junction temperature

175
C
up to Ts = 118 C; note 1
Note
1. Ts is the temperature at the soldering point of the collector tab.
September 1995
2
NXP Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFS520
THERMAL RESISTANCE
SYMBOL
Rth j-s
PARAMETER
CONDITIONS
thermal resistance from junction to
soldering point
THERMAL RESISTANCE
up to Ts = 118 C; note 1
190 K/W
Note
1. Ts is the temperature at the soldering point of the collector tab.
CHARACTERISTICS
Tj = 25 C, unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
ICBO
collector cut-off current
IE = 0; VCE = 6 V


50
hFE
DC current gain
IC = 20mA; VCE = 6 V
60
120
250
Ce
emitter capacitance
IC = ic = 0; VEB = 0.5 V; f = 1 MHz

1

pF
nA
Cc
collector capacitance
IE = ie = 0; VCB = 6 V; f = 1 MHz

0.5

pF
Cre
feedback capacitance
IC = 0; VCB = 6 V; f = 1 MHz

0.4

pF
fT
transition frequency
IC = 20 mA; VCE = 6 V; f = 1 GHz;
Tamb = 25 C

9

GHz
GUM
maximum unilateral power gain IC = 20 mA; VCE = 6 V; f = 900 MHz;
(note 1)
Tamb = 25 C

15

dB
IC = 20 mA; VCE = 6 V; f = 2 GHz;
Tamb = 25 C

9

dB
S212
insertion power gain
IC = 20 mA; VCE = 6 V; f = 900 MHz;
Tamb = 25 C
13
14

dB
F
noise figure
s = opt; IC = 5 mA; VCE = 6 V;
f = 900 MHz; Tamb = 25 C

1.1
1.6
dB
s = opt; IC = 20 mA; VCE = 6 V;
f = 900 MHz; Tamb = 25 C

1.6
2.1
dB
s = opt; IC = 5 mA; VCE = 6 V;
f = 2 GHz; Tamb = 25 C

1.9

dB
PL1
output power at 1 dB gain
compression
Ic = 20 mA; VCE = 6 V; RL = 50 ;
f = 900 MHz; Tamb = 25 C

17

dBm
ITO
third order intercept point
note 2

26

dBm
Notes
1. GUM is the maximum unilateral power gain, assuming S12 is zero and
2
S 21
- dB.
G UM = 10 log --------------------------------------------------------2
2
 1 – S 11   1 – S 22 
2. IC = 20 mA; VCE = 6 V; RL = 50 ; f = 900 MHz; Tamb = 25 C;
fp = 900 MHz; fq = 902 MHz; measured at f(2pq) = 898 MHz and at f(2qp) = 904 MHz.
September 1995
3
NXP Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFS520
MRC030 - 1
MRC028
200
400
handbook,
halfpage
handbook, halfpage
Ptot
(mW)
h FE
300
150
200
100
100
50
0
10−2
0
0
50
100
150
200
10−1
1
T ( o C)
s
102
10
I C (mA)
VCE = 6 V; Tj = 25 C.
Fig.2 Power derating curve.
Fig.3
DC current gain as a function of collector
current.
MRC021
MRC022
12
handbook,0.7
halfpage
C re
(pF)
handbook,
halfpage
f
T
(GHz)
10
0.6
VCE = 8 V
0.5
8
3V
0.4
6
0.3
4
0.2
2
0.1
0
0
0
2
4
6
8
10
VCB (V)
1
10
IC = 0; f = 1 MHz.
f = 1 GHz; Tamb = 25 C.
Fig.4
Fig.5
Feedback capacitance as a function of
collector-base voltage.
September 1995
4
I C (mA)
100
Transition frequency as a function of
collector current.
NXP Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFS520
In Figs 6 to 9, GUM = maximum unilateral power gain;
MSG = maximum stable gain; Gmax = maximum available
gain.
MRC026
25
gain
(dB)
handbook, halfpage
MRC027
20
handbook, halfpage
G UM
20
(dB)
MSG
18
G max
G UM
15
16
VCE = 6 V
10
3V
14
5
12
0
0
10
20
0
10
20
I C (mA)
30
VCE = 6 V; f = 2 GHz; Tamb = 25 C.
VCE = 6 V; f = 900 MHz; Tamb = 25 C.
Fig.6
30
I C (mA)
10
Maximum unilateral power gain as a
function of collector current.
Fig.7 Gain as a function of collector current.
MRC024
50
gain
(dB)
40
MRC025
50
handbook, halfpage
handbook, halfpage
gain
(dB)
G UM
40
30
G UM
MSG
30
MSG
20
20
G max
10
G max
10
0
10−2
10−1
1
f (GHz)
10
0
10−2
IC = 5 mA; VCE = 6 V; Tamb = 25 C.
1
f (GHz)
IC = 20 mA; VCE = 6 V; Tamb = 25 C.
Fig.8 Gain as a function of frequency.
September 1995
10−1
Fig.9 Gain as a function of frequency.
5
10
NXP Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFS520
MRC029
MRC023
4
handbook, halfpage
handbook, halfpage
F
(dB)
F
(dB)
4
3
3
I C = 20 mA
f = 2 GHz
5 mA
2
2
900 MHz
500 MHz
1
1
0
1
10
I C (mA)
0
10−1
102
1
f (GHz)
10
VCE = 6 V; Tamb = 25 C.
VCE = 6 V; Tamb = 25 C.
Fig.10 Minimum noise figure as a function of
collector current.
Fig.11 Minimum noise figure as a function of
frequency.
September 1995
6
NXP Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFS520
stability
circle
handbook, full pagewidth
90°
1.0
1
135°
0.8
45°
2
0.5
pot. unst.
region
0.6
0.2
0.4
5
Fmin = 1. 1 dB
0.2
ΓOPT
180°
0.2
0
0.5
1
2
5
0°
0
F = 1.5 dB
F = 2 dB
0.2
5
F = 3 dB
0.5
2
−135°
−45°
1
MRC077
1.0
−90°
IC = 5 mA; VCE = 6 V;
f = 900 MHz; Zo = 50 .
Fig.12 Noise circle.
90°
handbook, full pagewidth
1.0
1
135°
0.8
45°
2
0.5
0.6
F = 3 dB
F = 2.5 dB
0.2
0.4
5
F = 2 dB
Fmin = 1. 9 dB
180°
0.2
0
ΓMS
Gmax = 9.1 dB
0.2
0.5
ΓOPT
1
0.2
2
5
G = 8,5 dB
G = 8 dB
0°
0
5
G = 7 dB
0.5
2
−135°
−45°
1
MRC078
−90°
IC = 5 mA; VCE = 6 V;
f = 2 GHz; Zo = 50 .
Fig.13 Noise circle.
September 1995
7
1.0
NXP Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFS520
90°
handbook, full pagewidth
1.0
1
135°
0.8
45°
2
0.5
0.6
0.2
0.4
5
3 GHz
180°
0.2
0
0.5
0.2
1
2
5
0°
0
40 MHz
5
0.2
0.5
2
−135°
−45°
1
MRC066
−90°
IC = 20 mA; VCE = 6 V;
Zo = 50 .
Fig.14 Common emitter input reflection coefficient (S11).
90°
handbook, full pagewidth
135°
45°
40 MHz
3 GHz
180°
50
40
30
20
0°
10
−135°
−45°
−90°
MRC067
IC = 20 mA; VCE = 6 V.
Fig.15 Common emitter forward transmission coefficient (S21).
September 1995
8
1.0
NXP Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFS520
90°
handbook, full pagewidth
135°
45°
3 GHz
40 MHz
180°
0.5
0.4
0.3
0.2
0°
0.1
−135°
−45°
−90°
MRC060
IC = 20 mA; VCE = 6 V.
Fig.16 Common emitter reverse transmission coefficient (S12).
90°
handbook, full pagewidth
1.0
1
135°
0.8
45°
2
0.5
0.6
0.2
0.4
5
0.2
180°
0.2
0
0.5
1
2
5
0°
0
40 MHz
3 GHz
5
0.2
0.5
2
−135°
−45°
1
MRC061
IC = 20 mA; VCE = 6 V;
Zo = 50 .
−90°
Fig.17 Common emitter output reflection coefficient (S22).
September 1995
9
1.0
NXP Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFS520
PACKAGE OUTLINE
Plastic surface-mounted package; 3 leads
SOT323
D
E
B
A
X
HE
y
v M A
3
Q
A
A1
c
1
2
e1
bp
Lp
w M B
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max
bp
c
D
E
e
e1
HE
Lp
Q
v
w
mm
1.1
0.8
0.1
0.4
0.3
0.25
0.10
2.2
1.8
1.35
1.15
1.3
0.65
2.2
2.0
0.45
0.15
0.23
0.13
0.2
0.2
OUTLINE
VERSION
SOT323
September 1995
REFERENCES
IEC
JEDEC
JEITA
SC-70
10
EUROPEAN
PROJECTION
ISSUE DATE
04-11-04
06-03-16
NXP Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFS520
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Qualification
This document contains data from the preliminary specification.
Product data sheet
Production
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
Right to make changes  NXP Semiconductors
reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
DEFINITIONS
Product specification  The information and data
provided in a Product data sheet shall define the
specification of the product as agreed between NXP
Semiconductors and its customer, unless NXP
Semiconductors and customer have explicitly agreed
otherwise in writing. In no event however, shall an
agreement be valid in which the NXP Semiconductors
product is deemed to offer functions and qualities beyond
those described in the Product data sheet.
Suitability for use  NXP Semiconductors products are
not designed, authorized or warranted to be suitable for
use in life support, life-critical or safety-critical systems or
equipment, nor in applications where failure or malfunction
of an NXP Semiconductors product can reasonably be
expected to result in personal injury, death or severe
property or environmental damage. NXP Semiconductors
accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at
the customer’s own risk.
DISCLAIMERS
Limited warranty and liability  Information in this
document is believed to be accurate and reliable.
However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to
the accuracy or completeness of such information and
shall have no liability for the consequences of use of such
information.
Applications  Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
In no event shall NXP Semiconductors be liable for any
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charges) whether or not such damages are based on tort
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Customers are responsible for the design and operation of
their applications and products using NXP
Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or
customer product design. It is customer’s sole
responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the
customer’s applications and products planned, as well as
for the planned application and use of customer’s third
party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks
associated with their applications and products.
Notwithstanding any damages that customer might incur
for any reason whatsoever, NXP Semiconductors’
aggregate and cumulative liability towards customer for
the products described herein shall be limited in
accordance with the Terms and conditions of commercial
sale of NXP Semiconductors.
September 1995
11
NXP Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFS520
Export control  This document as well as the item(s)
described herein may be subject to export control
regulations. Export might require a prior authorization from
national authorities.
NXP Semiconductors does not accept any liability related
to any default, damage, costs or problem which is based
on any weakness or default in the customer’s applications
or products, or the application or use by customer’s third
party customer(s). Customer is responsible for doing all
necessary testing for the customer’s applications and
products using NXP Semiconductors products in order to
avoid a default of the applications and the products or of
the application or use by customer’s third party
customer(s). NXP does not accept any liability in this
respect.
Quick reference data  The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Non-automotive qualified products  Unless this data
sheet expressly states that this specific NXP
Semiconductors product is automotive qualified, the
product is not suitable for automotive use. It is neither
qualified nor tested in accordance with automotive testing
or application requirements. NXP Semiconductors accepts
no liability for inclusion and/or use of non-automotive
qualified products in automotive equipment or
applications.
Limiting values  Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) will cause permanent damage to
the device. Limiting values are stress ratings only and
(proper) operation of the device at these or any other
conditions above those given in the Recommended
operating conditions section (if present) or the
Characteristics sections of this document is not warranted.
Constant or repeated exposure to limiting values will
permanently and irreversibly affect the quality and
reliability of the device.
In the event that customer uses the product for design-in
and use in automotive applications to automotive
specifications and standards, customer (a) shall use the
product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and
specifications, and (b) whenever customer uses the
product for automotive applications beyond NXP
Semiconductors’ specifications such use shall be solely at
customer’s own risk, and (c) customer fully indemnifies
NXP Semiconductors for any liability, damages or failed
product claims resulting from customer design and use of
the product for automotive applications beyond NXP
Semiconductors’ standard warranty and NXP
Semiconductors’ product specifications.
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Semiconductors products are sold subject to the general
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http://www.nxp.com/profile/terms, unless otherwise
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Semiconductors hereby expressly objects to applying the
customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
No offer to sell or license  Nothing in this document
may be interpreted or construed as an offer to sell products
that is open for acceptance or the grant, conveyance or
implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
September 1995
12
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Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
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Printed in The Netherlands
R77/03/pp13
Date of release: September 1995