PHILIPS BFS540

DISCRETE SEMICONDUCTORS
DATA SHEET
BFS540
NPN 9 GHz wideband transistor
Product specification
File under Discrete Semiconductors, SC14
November 1992
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
FEATURES
BFS540
PINNING
• High power gain
PIN
DESCRIPTION
handbook, 2 columns
• Low noise figure
3
Code: N4
• High transition frequency
1
base
• Gold metallization ensures
excellent reliability
2
emitter
3
collector
• SOT323 envelope.
DESCRIPTION
1
2
Top view
MBC870
NPN transistor in a plastic SOT323
envelope.
Fig.1 SOT323.
It is intended for RF wideband
amplifier applications such as satellite
TV systems and RF portable
communication equipment with signal
frequencies up to 2 GHz.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
−
20
V
VCEO
collector-emitter voltage
open base
−
−
15
V
IC
DC collector current
−
−
120
mA
Ptot
total power dissipation
−
−
500
mW
up to Ts = 80 °C; note 1
hFE
DC current gain
IC = 40 mA; VCE = 8 V; Tj = 25 °C
60
120
250
fT
transition frequency
IC = 40 mA; VCE = 8 V; f = 1 GHz;
Tamb = 25 °C
−
9
−
GHz
GUM
maximum unilateral power gain
IC = 40 mA; VCE = 8 V; f = 900 MHz;
Tamb = 25 °C
−
14
−
dB
F
noise figure
IC = 10 mA; VCE = 8 V; f = 900 MHz;
Tamb = 25 °C
−
1.3
1.7
dB
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
−
MAX.
VCBO
collector-base voltage
open emitter
VCES
collector-emitter voltage
RBE = 0
−
15
V
VEBO
emitter-base voltage
open collector
−
2.5
V
IC
DC collector current
−
120
mA
Ptot
total power dissipation
−
500
mW
Tstg
storage temperature
−65
150
°C
Tj
junction temperature
−
175
°C
up to Ts = 80 °C; note 1
Note
1. Ts is the temperature at the soldering point of the collector tab.
November 1992
2
20
UNIT
V
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFS540
THERMAL RESISTANCE
SYMBOL
Rth j-s
PARAMETER
THERMAL
RESISTANCE
CONDITIONS
thermal resistance from junction to
soldering point
up to Ts = 80 °C; note 1
190 K/W
Note
1. Ts is the temperature at the soldering point of the collector tab.
CHARACTERISTICS
Tj = 25 °C, unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
ICBO
collector cut-off current
IE = 0; VCE = 8 V
−
−
50
hFE
DC current gain
IC = 40 mA; VCE = 8 V
60
120
250
Ce
emitter capacitance
IC = ic = 0; VEB = 0.5 V; f = 1 MHz
−
2
−
pF
Cc
collector capacitance
IE = ie = 0; VCB = 8 V; f = 1 MHz
−
0.9
−
pF
Cre
feedback capacitance
IC = 0; VCB = 8 V; f = 1 MHz
−
0.6
−
pF
fT
transition frequency
IC = 40 mA; VCE = 8 V; f = 1 GHz;
Tamb = 25 °C
−
9
−
GHz
GUM
maximum unilateral power gain IC = 40 mA; VCE = 8 V; f = 900 MHz;
(note 1)
Tamb = 25 °C
−
14
−
dB
IC = 40 mA; VCE = 8 V; f = 2 GHz;
Tamb = 25 °C
−
8
−
dB
nA
S212
insertion power gain
IC = 40 mA; VCE = 8 V; f = 900 MHz;
Tamb = 25 °C
12
13
−
dB
F
noise figure
Γs = Γopt; IC = 10 mA; VCE = 8 V;
f = 900 MHz; Tamb = 25 °C
−
1.3
1.8
dB
Γs = Γopt; IC = 40 mA; VCE = 8 V;
f = 900 MHz; Tamb = 25 °C
−
1.9
2.4
dB
Γs = Γopt; IC = 10 mA; VCE = 8 V;
f = 2 GHz; Tamb = 25 °C
−
2.1
−
dB
PL1
output power at 1 dB gain
compression
Ic = 40 mA; VCE = 8 V; RL = 50 Ω;
f = 900 MHz; Tamb = 25 °C
−
21
−
dBm
ITO
third order intercept point
note 2
−
34
−
dBm
Notes
1. GUM is the maximum unilateral power gain, assuming S12 is zero and
2
S 21
- dB.
G UM = 10 log ------------------------------------------------------------2 
2

 1 – S 11   1 – S 22 
2. IC = 40 mA; VCE = 8 V; RL = 50 Ω; f = 900 MHz; Tamb = 25 °C;
fp = 900 MHz; fq = 902 MHz; measured at f(2p−q) = 898 MHz and at f(2q−p) = 904 MHz.
November 1992
3
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFS540
MRC008 - 1
400
handbook,
halfpage
MRC010
200
handbook, halfpage
P
tot
(mW)
h FE
300
150
200
100
100
50
0
0
50
100
150
0
10−2
200
T ( o C)
10−1
1
10
s
IC (mA)
102
VCE = 8 V; Tj = 25 °C.
VCE ≤ 10 V.
Fig.2 Power derating curve.
Fig.3
MRC001
1
DC current gain as a function of collector
current.
MRC002
12
handbook, halfpage
handbook, halfpage
Cre
(pF)
fT
(GHz)
0.8
V
=8V
CE
8
0.6
4V
0.4
4
0.2
0
0
2
4
6
8
0
10
12
VCB (V)
1
10
IC = 0; f = 1 MHz.
f = 1 GHz; Tamb = 25 °C.
Fig.4
Fig.5
Feedback capacitance as a function of
collector-base voltage.
November 1992
4
I C (mA)
102
Transition frequency as a function of
collector current.
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFS540
In Figs 6 to 9, GUM = maximum unilateral power gain;
MSG = maximum stable gain; Gmax = maximum available
gain.
MRC006
15
handbook, halfpage
MRC007
20
GUM
(dB)
gain
(dB)
handbook, halfpage
16
10
VCE = 8 V
G max
4V
12
GUM
5
8
4
0
0
0
0
10
20
30
40
50
IC (mA)
20
40
IC (mA)
60
VCE = 8 V; f = 2 GHz; Tamb = 25 °C.
f = 900 MHz; Tamb = 25 °C.
Fig.6
Maximum unilateral power gain as a
function of collector current.
Fig.7 Gain as a function of collector current.
MRC004
50
MRC005
50
handbook, halfpage
handbook, halfpage
gain
(dB)
40
gain
(dB)
40
G UM
G UM
30
30
MSG
MSG
20
20
G max
G max
10
10
0
10−2
10−1
1
f (GHz)
0
10−2
10
1
f (GHz)
10
IC = 40 mA; VCE = 8 V; Tamb = 25 °C.
IC = 10 mA; VCE = 8 V; Tamb = 25 °C.
Fig.8 Gain as a function of frequency.
November 1992
10−1
Fig.9 Gain as a function of frequency.
5
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFS540
MRC009
4
MRC003
4
handbook, halfpage
handbook, halfpage
F
F
(dB)
(dB)
IC =
40 mA
3
3
10 mA
f=
2 GHz
2
2
900 MHz
1
0
1
500 MHz
1
10
IC (mA)
0
10−1
102
1
f (GHz)
10
VCE = 8 V; Tamb = 25 °C.
VCE = 8 V; Tamb = 25 °C.
Fig.10 Minimum noise figure as a function of
collector current.
Fig.11 Minimum noise figure as a function of
frequency.
November 1992
6
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFS540
handbook, full pagewidth
90°
1.0
1
135°
0.8
45°
2
0.5
pot. unst.
region
0.6
0.2
0.4
5
Fmin = 1. 3 dB
0.2
ΓOPT
180°
0.2
0
0.5
1
2
5
0°
F = 1.5 dB
0
F = 2 dB
stability
circle
5
0.2
F = 3 dB
0.5
−135°
2
−45°
1
MRC079
1.0
−90°
IC = 10 mA; VCE = 8 V;
f = 900 MHz; Zo = 50 Ω.
Fig.12 Noise circle.
90°
handbook, full pagewidth
1.0
1
135°
0.8
45°
2
0.5
0.6
0.2
180°
F = 4 dB
F = 3 dB
F = 2.5 dB
0.5
1
0.2
0
0.4
5
0.2
2
5
0°
0
ΓMS
Gmax = 8.7 dB
Fmin = 2. 1 dB
G = 8 dB ΓOPT
0.2
5
G = 7 dB
G = 6 dB
−135°
0.5
2
−45°
1
MRC080
−90°
IC = 10 mA; VCE = 8 V;
f = 2 GHz; Zo = 50 Ω.
Fig.13 Noise circle.
November 1992
7
1.0
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFS540
90°
handbook, full pagewidth
1.0
1
135°
0.8
45°
2
0.5
0.6
3 GHz
0.2
0.4
5
0.2
180°
0.2
0
0.5
1
2
0.2
5
0°
5
40 MHz
0.5
−135°
2
0
−45°
1
MRC062
−90°
IC = 40 mA; VCE = 8 V;
Zo = 50 Ω.
Fig.14 Common emitter input reflection coefficient (S11).
90°
handbook, full pagewidth
135°
45°
40 MHz
3 GHz
180°
50
40
30
20
0°
10
−135°
−45°
−90°
MRC063
IC = 40 mA; VCE = 8 V.
Fig.15 Common emitter forward transmission coefficient (S21).
November 1992
8
1.0
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFS540
90°
handbook, full pagewidth
135°
45°
3 GHz
40 MHz
180°
0.5
0.4
0.3
0.2
0°
0.1
−135°
−45°
−90°
MRC064
IC = 40 mA; VCE = 8 V.
Fig.16 Common emitter reverse transmission coefficient (S12).
90°
handbook, full pagewidth
1.0
1
135°
0.8
45°
2
0.5
0.6
0.2
0.4
5
0.2
180°
0.2
0
0.5
1
2
5
0°
0
3 GHz
40 MHz
5
0.2
−135°
0.5
2
−45°
1
MRC065
−90°
IC = 40 mA; VCE = 8 V;
Zo = 50 Ω.
November 1992
Fig.17 Common emitter output reflection coefficient (S22).
9
1.0
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFS540
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT323
D
E
B
A
X
HE
y
v M A
3
Q
A
A1
c
1
2
e1
bp
Lp
w M B
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max
bp
c
D
E
e
e1
HE
Lp
Q
v
w
mm
1.1
0.8
0.1
0.4
0.3
0.25
0.10
2.2
1.8
1.35
1.15
1.3
0.65
2.2
2.0
0.45
0.15
0.23
0.13
0.2
0.2
OUTLINE
VERSION
SOT323
November 1992
REFERENCES
IEC
JEDEC
EIAJ
SC-70
10
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFS540
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
November 1992
11