DISCRETE SEMICONDUCTORS DATA SHEET M3D173 BFR520T NPN 9 GHz wideband transistor Product specification Supersedes data of 1999 Nov 02 2000 Apr 03 NXP Semiconductors Product specification NPN 9 GHz wideband transistor BFR520T FEATURES DESCRIPTION High power gain Silicon NPN transistor encapsulated in a plastic SOT416 (SC-75) package. Low noise figure 3 lfpage High transition frequency Gold metallization ensures excellent reliability PINNING SOT416 (SC-75) package. APPLICATIONS PIN DESCRIPTION 1 base 2 emitter 3 collector 1 2 Top view MBK090 Marking code: N2. Wideband applications such as satellite TV tuners, cellular phones, cordless phones, pagers etc., with signal frequencies up to 2 GHz. Fig.1 SOT416. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VCBO collector-base voltage open emitter 20 V VCES collector-emitter voltage RBE = 0 15 V IC DC collector current 70 mA Ptot total power dissipation up to Ts = 75 C; note 1 150 mW hFE DC current gain IC = 20 mA; VCE = 6 V; Tj = 25 C 60 120 250 fT transition frequency IC = 20 mA; VCE = 6 V; f = 1 GHz; Tamb = 25 C 9 GHz GUM maximum unilateral power gain IC = 20 mA; VCE = 6 V; f = 900 MHz; Tamb = 25 C 15 dB F noise figure IC = 5 mA; VCE = 6 V; f = 900 MHz; Tamb = 25 C 1.1 1.6 dB Note 1. Ts is the temperature at the soldering point of the collector tab. LIMITING VALUES In accordance with the Absolute Maximum System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter 20 V VCES collector-emitter voltage RBE = 0 15 V VEBO emitter-base voltage open collector 2.5 V 70 mA 150 mW IC DC collector current Ptot total power dissipation Tstg storage temperature 65 +150 C Tj junction temperature 150 C up to Ts = 75 C; note 1 Note 1. Ts is the temperature at the soldering point of the collector tab. 2000 Apr 03 2 NXP Semiconductors Product specification NPN 9 GHz wideband transistor BFR520T THERMAL CHARACTERISTICS SYMBOL Rth j-s PARAMETER thermal resistance from junction to soldering point VALUE UNIT 500 K/W CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT nA ICBO collector cut-off current IE = 0; VCE = 6 V 50 hFE DC current gain IC = 20 mA; VCE = 6 V 60 120 250 Ce emitter capacitance IC = ic = 0; VEB = 0.5 V; f = 1 MHz 1 pF Cc collector capacitance IE = ie = 0; VCB = 6 V; f = 1 MHz 0.5 pF Cre feedback capacitance IC = 0; VCB = 6 V; f = 1 MHz 0.4 pF fT transition frequency IC = 20 mA; VCE = 6 V; f = 1 GHz; Tamb = 25 C 9 GHz GUM maximum unilateral power gain; note 1 IC = 20 mA; VCE = 6 V; f = 900 MHz; Tamb = 25 C 15 dB IC = 20 mA; VCE = 6 V; f = 2 GHz; Tamb = 25 C 9 dB s212 insertion power gain IC = 20 mA; VCE = 6 V; f = 900 MHz; Tamb = 25 C 13 14 dB F noise figure s = opt; IC = 5 mA; VCE = 6 V; f = 900 MHz; Tamb = 25 C 1.1 1.6 dB s = opt; IC = 20 mA; VCE = 6 V; f = 900 MHz; Tamb = 25 C 1.6 2.1 dB s = opt; IC = 5 mA; VCE = 6 V; f = 2 GHz; Tamb = 25 C 1.9 dB PL1 output power at 1 dB gain compression IC = 20 mA; VCE = 6 V; RL = 50 ; f = 900 MHz; Tamb = 25 C 17 dBm ITO third order intercept point note 2 26 dBm Notes 1. GUM is the maximum unilateral power gain, assuming s12 is zero and 2 G UM s 21 - dB = 10 log ------------------------------------------------------2 2 1 – s 11 1 – s 22 2. IC = 20 mA; VCE = 6 V; RL = 50 ; f = 900 MHz; Tamb = 25 C; fp = 900 MHz; fq = 902 MHz; measured at f(2pq) = 898 MHz and at f(2qp) = 904 MHz. 2000 Apr 03 3 NXP Semiconductors Product specification NPN 9 GHz wideband transistor BFR520T MGU068 200 MRC028 200 handbook, halfpage Ptot (mW) h FE 150 150 100 100 50 50 0 0 50 100 150 0 10−2 200 Ts (°C) 10−1 1 102 10 I C (mA) VCE = 6 V; Tj = 25 C. Fig.3 DC current gain as a function of collector current; typical values. Fig.2 Power derating curve. MRC021 MRC022 12 handbook,0.7 halfpage C re (pF) handbook, halfpage f T (GHz) 10 0.6 VCE = 8 V 0.5 8 3V 0.4 6 0.3 4 0.2 2 0.1 0 0 0 2 4 6 8 10 VCB (V) 1 10 IC = 0; f = 1 MHz. f = 1 GHz; Tamb = 25 C. Fig.4 Fig.5 Feedback capacitance as a function of collector-base voltage; typical values. 2000 Apr 03 4 I C (mA) 100 Transition frequency as a function of collector current; typical values. NXP Semiconductors Product specification NPN 9 GHz wideband transistor BFR520T MRC027 20 MRC026 25 gain (dB) handbook, halfpage handbook, halfpage G UM (dB) 18 20 MSG 16 G max G UM 15 VCE = 6 V 3V 14 10 12 5 10 0 0 10 20 I C (mA) 30 0 10 20 30 I C (mA) VCE = 6 V; f = 900 MHz; Tamb = 25 C. GUM = maximum unilateral power gain. MSG = maximum stable gain. Gmax = maximum available gain. VCE = 6 V; f = 2 GHz; Tamb = 25 C. GUM = maximum unilateral power gain. MSG = maximum stable gain. Gmax = maximum available gain. Fig.6 Fig.7 Maximum unilateral power gain as a function of collector current; typical values. Gain as a function of collector current; typical values. MRC024 50 gain (dB) 40 MRC025 50 handbook, halfpage handbook, halfpage gain (dB) G UM 40 30 G UM MSG 30 MSG 20 20 G max 10 G max 10 0 10−2 10−1 1 f (GHz) 10 0 10−2 10−1 IC = 5 mA; VCE = 6 V; Tamb = 25 C. GUM = maximum unilateral power gain. MSG = maximum stable gain. Gmax = maximum available gain. IC = 20 mA; VCE = 6 V; Tamb = 25 C. GUM = maximum unilateral power gain. MSG = maximum stable gain. Gmax = maximum available gain. Fig.8 Fig.9 Gain as a function of frequency; typical values. 2000 Apr 03 5 1 f (GHz) Gain as a function of frequency; typical values. 10 NXP Semiconductors Product specification NPN 9 GHz wideband transistor BFR520T MRC029 MRC023 4 handbook, halfpage handbook, halfpage F (dB) F (dB) 4 3 3 I C = 20 mA f = 2 GHz 5 mA 2 2 900 MHz 500 MHz 1 1 0 1 10 I C (mA) 0 10−1 102 1 f (GHz) 10 VCE = 6 V; Tamb = 25 C. VCE = 6 V; Tamb = 25 C. Fig.10 Minimum noise figure as a function of collector current; typical values. Fig.11 Minimum noise figure as a function of frequency; typical values. 2000 Apr 03 6 NXP Semiconductors Product specification NPN 9 GHz wideband transistor BFR520T stability circle handbook, full pagewidth 90° 1.0 1 135° 0.8 45° 2 0.5 pot. unst. region 0.6 0.2 0.4 5 Fmin = 1. 1 dB 0.2 ΓOPT 180° 0.2 0 0.5 1 2 5 0° 0 F = 1.5 dB F = 2 dB 0.2 5 F = 3 dB 0.5 2 −135° −45° 1 MRC077 IC = 5 mA; VCE = 6 V; f = 900 MHz; Zo = 50 . 1.0 −90° Fig.12 Common emitter noise figure circles; typical values. 90° handbook, full pagewidth 1.0 1 135° 0.8 45° 2 0.5 0.6 F = 3 dB F = 2.5 dB 0.2 0.4 5 F = 2 dB Fmin = 1. 9 dB 180° 0.2 0 ΓMS Gmax = 9.1 dB 0.2 0.5 ΓOPT 1 0.2 2 5 G = 8,5 dB G = 8 dB 0° 0 5 G = 7 dB 0.5 2 −135° −45° 1 MRC078 IC = 5 mA; VCE = 6 V; f = 2 GHz; Zo = 50 . −90° Fig.13 Common emitter noise figure circles; typical values. 2000 Apr 03 7 1.0 NXP Semiconductors Product specification NPN 9 GHz wideband transistor BFR520T 90° handbook, full pagewidth 1.0 1 135° 0.8 45° 2 0.5 0.6 0.2 0.4 5 3 GHz 180° 0.2 0 0.5 0.2 1 2 5 0° 0 40 MHz 5 0.2 0.5 2 −135° −45° 1 MRC066 1.0 −90° IC = 20 mA; VCE = 6 V; Zo = 50 . Fig.14 Common emitter input reflection coefficient (s11); typical values. 90° handbook, full pagewidth 135° 45° 40 MHz 3 GHz 180° 50 40 30 20 0° 10 −135° −45° −90° MRC067 IC = 20 mA; VCE = 6 V. Fig.15 Common emitter forward transmission coefficient (s21); typical values. 2000 Apr 03 8 NXP Semiconductors Product specification NPN 9 GHz wideband transistor BFR520T 90° handbook, full pagewidth 135° 45° 3 GHz 40 MHz 180° 0.5 0.4 0.3 0.2 0° 0.1 −135° −45° −90° MRC060 IC = 20 mA; VCE = 6 V. Fig.16 Common emitter reverse transmission coefficient (s12); typical values. 90° handbook, full pagewidth 1.0 1 135° 0.8 45° 2 0.5 0.6 0.2 0.4 5 0.2 180° 0.2 0 0.5 1 2 5 0° 0 40 MHz 3 GHz 5 0.2 0.5 2 −135° −45° 1 MRC061 IC = 20 mA; VCE = 6 V; Zo = 50 . 1.0 −90° Fig.17 Common emitter output reflection coefficient (s22); typical values. 2000 Apr 03 9 NXP Semiconductors Product specification NPN 9 GHz wideband transistor BFR520T PACKAGE OUTLINE Plastic surface-mounted package; 3 leads SOT416 D E B A X HE v M A 3 Q A 1 A1 2 e1 c bp w M B Lp e detail X 0 0.5 1 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp c D E e e1 HE Lp Q v w mm 0.95 0.60 0.1 0.30 0.15 0.25 0.10 1.8 1.4 0.9 0.7 1 0.5 1.75 1.45 0.45 0.15 0.23 0.13 0.2 0.2 OUTLINE VERSION SOT416 2000 Apr 03 REFERENCES IEC JEDEC JEITA SC-75 10 EUROPEAN PROJECTION ISSUE DATE 04-11-04 06-03-16 NXP Semiconductors Product specification NPN 9 GHz wideband transistor BFR520T DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. Right to make changes NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. DEFINITIONS Product specification The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet. Suitability for use NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. DISCLAIMERS Limited warranty and liability Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Applications Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 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Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. 2000 Apr 03 11 NXP Semiconductors Product specification NPN 9 GHz wideband transistor BFR520T Export control This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). 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Limiting values Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. 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No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: [email protected] © NXP B.V. 2010 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands R77/02/pp13 Date of release: 2000 Apr 03