Data Sheet

DISCRETE SEMICONDUCTORS
DATA SHEET
M3D173
BFR520T
NPN 9 GHz wideband transistor
Product specification
Supersedes data of 1999 Nov 02
2000 Apr 03
NXP Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFR520T
FEATURES
DESCRIPTION
 High power gain
Silicon NPN transistor encapsulated
in a plastic SOT416 (SC-75) package.
 Low noise figure
3
lfpage
 High transition frequency
 Gold metallization ensures
excellent reliability
PINNING
 SOT416 (SC-75) package.
APPLICATIONS
PIN
DESCRIPTION
1
base
2
emitter
3
collector
1
2
Top view
MBK090
Marking code: N2.
Wideband applications such as
satellite TV tuners, cellular phones,
cordless phones, pagers etc., with
signal frequencies up to 2 GHz.
Fig.1 SOT416.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VCBO
collector-base voltage
open emitter


20
V
VCES
collector-emitter voltage
RBE = 0


15
V
IC
DC collector current


70
mA
Ptot
total power dissipation
up to Ts = 75 C; note 1


150
mW
hFE
DC current gain
IC = 20 mA; VCE = 6 V; Tj = 25 C
60
120
250
fT
transition frequency
IC = 20 mA; VCE = 6 V; f = 1 GHz;
Tamb = 25 C

9

GHz
GUM
maximum unilateral power
gain
IC = 20 mA; VCE = 6 V; f = 900 MHz;
Tamb = 25 C

15

dB
F
noise figure
IC = 5 mA; VCE = 6 V; f = 900 MHz;
Tamb = 25 C

1.1
1.6
dB
Note
1. Ts is the temperature at the soldering point of the collector tab.
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter

20
V
VCES
collector-emitter voltage
RBE = 0

15
V
VEBO
emitter-base voltage
open collector

2.5
V

70
mA

150
mW
IC
DC collector current
Ptot
total power dissipation
Tstg
storage temperature
65
+150
C
Tj
junction temperature

150
C
up to Ts = 75 C; note 1
Note
1. Ts is the temperature at the soldering point of the collector tab.
2000 Apr 03
2
NXP Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFR520T
THERMAL CHARACTERISTICS
SYMBOL
Rth j-s
PARAMETER
thermal resistance from junction to soldering point
VALUE
UNIT
500
K/W
CHARACTERISTICS
Tj = 25 C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
nA
ICBO
collector cut-off current
IE = 0; VCE = 6 V


50
hFE
DC current gain
IC = 20 mA; VCE = 6 V
60
120
250
Ce
emitter capacitance
IC = ic = 0; VEB = 0.5 V; f = 1 MHz

1

pF
Cc
collector capacitance
IE = ie = 0; VCB = 6 V; f = 1 MHz

0.5

pF
Cre
feedback capacitance
IC = 0; VCB = 6 V; f = 1 MHz

0.4

pF
fT
transition frequency
IC = 20 mA; VCE = 6 V; f = 1 GHz;
Tamb = 25 C

9

GHz
GUM
maximum unilateral power
gain; note 1
IC = 20 mA; VCE = 6 V; f = 900 MHz;
Tamb = 25 C

15

dB
IC = 20 mA; VCE = 6 V; f = 2 GHz;
Tamb = 25 C

9

dB
s212
insertion power gain
IC = 20 mA; VCE = 6 V; f = 900 MHz;
Tamb = 25 C
13
14

dB
F
noise figure
s = opt; IC = 5 mA; VCE = 6 V;
f = 900 MHz; Tamb = 25 C

1.1
1.6
dB
s = opt; IC = 20 mA; VCE = 6 V;
f = 900 MHz; Tamb = 25 C

1.6
2.1
dB
s = opt; IC = 5 mA; VCE = 6 V;
f = 2 GHz; Tamb = 25 C

1.9

dB
PL1
output power at 1 dB gain
compression
IC = 20 mA; VCE = 6 V; RL = 50 ;
f = 900 MHz; Tamb = 25 C

17

dBm
ITO
third order intercept point
note 2

26

dBm
Notes
1. GUM is the maximum unilateral power gain, assuming s12 is zero and
2
G UM
s 21
- dB
= 10 log ------------------------------------------------------2
2
 1 – s 11   1 – s 22 
2. IC = 20 mA; VCE = 6 V; RL = 50 ; f = 900 MHz; Tamb = 25 C; fp = 900 MHz; fq = 902 MHz; measured at
f(2pq) = 898 MHz and at f(2qp) = 904 MHz.
2000 Apr 03
3
NXP Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFR520T
MGU068
200
MRC028
200
handbook, halfpage
Ptot
(mW)
h FE
150
150
100
100
50
50
0
0
50
100
150
0
10−2
200
Ts (°C)
10−1
1
102
10
I C (mA)
VCE = 6 V; Tj = 25 C.
Fig.3
DC current gain as a function of collector
current; typical values.
Fig.2 Power derating curve.
MRC021
MRC022
12
handbook,0.7
halfpage
C re
(pF)
handbook,
halfpage
f
T
(GHz)
10
0.6
VCE = 8 V
0.5
8
3V
0.4
6
0.3
4
0.2
2
0.1
0
0
0
2
4
6
8
10
VCB (V)
1
10
IC = 0; f = 1 MHz.
f = 1 GHz; Tamb = 25 C.
Fig.4
Fig.5
Feedback capacitance as a function of
collector-base voltage; typical values.
2000 Apr 03
4
I C (mA)
100
Transition frequency as a function of
collector current; typical values.
NXP Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFR520T
MRC027
20
MRC026
25
gain
(dB)
handbook, halfpage
handbook, halfpage
G UM
(dB)
18
20
MSG
16
G max
G UM
15
VCE = 6 V
3V
14
10
12
5
10
0
0
10
20
I C (mA)
30
0
10
20
30
I C (mA)
VCE = 6 V; f = 900 MHz; Tamb = 25 C.
GUM = maximum unilateral power gain.
MSG = maximum stable gain.
Gmax = maximum available gain.
VCE = 6 V; f = 2 GHz; Tamb = 25 C.
GUM = maximum unilateral power gain.
MSG = maximum stable gain.
Gmax = maximum available gain.
Fig.6
Fig.7
Maximum unilateral power gain as a
function of collector current; typical values.
Gain as a function of collector current;
typical values.
MRC024
50
gain
(dB)
40
MRC025
50
handbook, halfpage
handbook, halfpage
gain
(dB)
G UM
40
30
G UM
MSG
30
MSG
20
20
G max
10
G max
10
0
10−2
10−1
1
f (GHz)
10
0
10−2
10−1
IC = 5 mA; VCE = 6 V; Tamb = 25 C.
GUM = maximum unilateral power gain.
MSG = maximum stable gain.
Gmax = maximum available gain.
IC = 20 mA; VCE = 6 V; Tamb = 25 C.
GUM = maximum unilateral power gain.
MSG = maximum stable gain.
Gmax = maximum available gain.
Fig.8
Fig.9
Gain as a function of frequency;
typical values.
2000 Apr 03
5
1
f (GHz)
Gain as a function of frequency;
typical values.
10
NXP Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFR520T
MRC029
MRC023
4
handbook, halfpage
handbook, halfpage
F
(dB)
F
(dB)
4
3
3
I C = 20 mA
f = 2 GHz
5 mA
2
2
900 MHz
500 MHz
1
1
0
1
10
I C (mA)
0
10−1
102
1
f (GHz)
10
VCE = 6 V; Tamb = 25 C.
VCE = 6 V; Tamb = 25 C.
Fig.10 Minimum noise figure as a function of
collector current; typical values.
Fig.11 Minimum noise figure as a function of
frequency; typical values.
2000 Apr 03
6
NXP Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFR520T
stability
circle
handbook, full pagewidth
90°
1.0
1
135°
0.8
45°
2
0.5
pot. unst.
region
0.6
0.2
0.4
5
Fmin = 1. 1 dB
0.2
ΓOPT
180°
0.2
0
0.5
1
2
5
0°
0
F = 1.5 dB
F = 2 dB
0.2
5
F = 3 dB
0.5
2
−135°
−45°
1
MRC077
IC = 5 mA; VCE = 6 V;
f = 900 MHz; Zo = 50 .
1.0
−90°
Fig.12 Common emitter noise figure circles; typical values.
90°
handbook, full pagewidth
1.0
1
135°
0.8
45°
2
0.5
0.6
F = 3 dB
F = 2.5 dB
0.2
0.4
5
F = 2 dB
Fmin = 1. 9 dB
180°
0.2
0
ΓMS
Gmax = 9.1 dB
0.2
0.5
ΓOPT
1
0.2
2
5
G = 8,5 dB
G = 8 dB
0°
0
5
G = 7 dB
0.5
2
−135°
−45°
1
MRC078
IC = 5 mA; VCE = 6 V;
f = 2 GHz; Zo = 50 .
−90°
Fig.13 Common emitter noise figure circles; typical values.
2000 Apr 03
7
1.0
NXP Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFR520T
90°
handbook, full pagewidth
1.0
1
135°
0.8
45°
2
0.5
0.6
0.2
0.4
5
3 GHz
180°
0.2
0
0.5
0.2
1
2
5
0°
0
40 MHz
5
0.2
0.5
2
−135°
−45°
1
MRC066
1.0
−90°
IC = 20 mA; VCE = 6 V;
Zo = 50 .
Fig.14 Common emitter input reflection coefficient (s11); typical values.
90°
handbook, full pagewidth
135°
45°
40 MHz
3 GHz
180°
50
40
30
20
0°
10
−135°
−45°
−90°
MRC067
IC = 20 mA; VCE = 6 V.
Fig.15 Common emitter forward transmission coefficient (s21); typical values.
2000 Apr 03
8
NXP Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFR520T
90°
handbook, full pagewidth
135°
45°
3 GHz
40 MHz
180°
0.5
0.4
0.3
0.2
0°
0.1
−135°
−45°
−90°
MRC060
IC = 20 mA; VCE = 6 V.
Fig.16 Common emitter reverse transmission coefficient (s12); typical values.
90°
handbook, full pagewidth
1.0
1
135°
0.8
45°
2
0.5
0.6
0.2
0.4
5
0.2
180°
0.2
0
0.5
1
2
5
0°
0
40 MHz
3 GHz
5
0.2
0.5
2
−135°
−45°
1
MRC061
IC = 20 mA; VCE = 6 V;
Zo = 50 .
1.0
−90°
Fig.17 Common emitter output reflection coefficient (s22); typical values.
2000 Apr 03
9
NXP Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFR520T
PACKAGE OUTLINE
Plastic surface-mounted package; 3 leads
SOT416
D
E
B
A
X
HE
v M A
3
Q
A
1
A1
2
e1
c
bp
w M B
Lp
e
detail X
0
0.5
1 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max
bp
c
D
E
e
e1
HE
Lp
Q
v
w
mm
0.95
0.60
0.1
0.30
0.15
0.25
0.10
1.8
1.4
0.9
0.7
1
0.5
1.75
1.45
0.45
0.15
0.23
0.13
0.2
0.2
OUTLINE
VERSION
SOT416
2000 Apr 03
REFERENCES
IEC
JEDEC
JEITA
SC-75
10
EUROPEAN
PROJECTION
ISSUE DATE
04-11-04
06-03-16
NXP Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFR520T
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Qualification
This document contains data from the preliminary specification.
Product data sheet
Production
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
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reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
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Semiconductors and its customer, unless NXP
Semiconductors and customer have explicitly agreed
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However, NXP Semiconductors does not give any
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Semiconductors products, and NXP Semiconductors
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Semiconductors product is suitable and fit for the
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aggregate and cumulative liability towards customer for
the products described herein shall be limited in
accordance with the Terms and conditions of commercial
sale of NXP Semiconductors.
2000 Apr 03
11
NXP Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFR520T
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NXP Semiconductors does not accept any liability related
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Quick reference data  The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
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Non-automotive qualified products  Unless this data
sheet expressly states that this specific NXP
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qualified products in automotive equipment or
applications.
Limiting values  Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) will cause permanent damage to
the device. Limiting values are stress ratings only and
(proper) operation of the device at these or any other
conditions above those given in the Recommended
operating conditions section (if present) or the
Characteristics sections of this document is not warranted.
Constant or repeated exposure to limiting values will
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In the event that customer uses the product for design-in
and use in automotive applications to automotive
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2000 Apr 03
12
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This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
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Printed in The Netherlands
R77/02/pp13
Date of release: 2000 Apr 03