UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT75N08 Power MOSFET 75A, 80V N-CHANNEL POWERTRENCH MOSFET 1 TO-220 DESCRIPTION The UTC UTT75N08 is an N-channel enhancement MOSFET, it uses UTC’s advanced technology to provide the customers with perfect RDS(ON), high switching speed, high current capacity and low gate charge. The UTC UTT75N08 is suitable for DC-DC converters, Off-Line UPS, High Voltage Synchronous Rectifier, Primary Switch for 48V and 24V Systems, etc. 1 TO-220F1 FEATURES 1 TO - 252 * RDS(ON＜21mΩ @ VGS=10V, ID=75A * High Switching Speed * High Current Capacity SYMBOL ORDERING INFORMATION Ordering Number Lead Free Halogen Free UTT75N08L-TA3-T UTT75N08G-TA3-T UTT75N08L-TF1-T UTT75N08G-TF1-T UTT75N08L-TN3-R UTT75N08G-TN3-R Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220 TO-220F1 TO-252 1 G G G Pin Assignment 2 3 D S D S D S Packing Tube Tube Tape Reel MARKING www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 3 QW-R502-769.e UTT75N08 Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise noted) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 80 V Gate-Source Voltage VGSS ±20 V Continuous ID 75 A Drain Current Pulsed (Note 1) IDM 300 A Single Pulsed Avalanche Energy (Note 2) EAS 85 mJ TO-220 125 W Power Dissipation TO-220F1 PD 40 W TO-252 50 W Junction Temperature TJ 150 °C Storage Temperature Range TSTG -55~150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL CHARACTERISTICS PARAMETER TO-220/TO-220F1 Junction to Ambient TO-252 TO-220 Junction to Case TO-220F1 TO-252 SYMBOL θJA θJC RATINGS 62.5 110 1 3.2 2.5 UNIT °C/W °C/W °C/W ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS ID=250µA, VGS=0V Drain-Source Leakage Current IDSS VDS=80V, VGS=0V Forward VGS=+20V, VDS=0V Gate-Source Leakage Current IGSS Reverse VGS=-20V, VDS=0V ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=75A DYNAMIC PARAMETERS Input Capacitance CISS VGS=0V, VDS=25V, f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Total Gate Charge QG VGS=10V, VDD=50V, Gate to Source Charge QGS ID=1.3A, IG=100µA Gate to Drain Charge QGD Turn-ON Delay Time tD(ON) Rise Time tR VDD=30V, ID=0.5A, VGS=10V, RGS=25Ω Turn-OFF Delay Time tD(OFF) Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD ISD=75A Notes: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2% 2. L = 0.03mH, IAS = 75A, VDD = 80V, RG = 25Ω, Starting TJ = 25°C UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 80 1.4 1 +100 -100 V µA nA nA 3 21 V mΩ 3100 250 195 pF pF pF 150 12 31.6 80 115 685 190 nC nC nC ns ns ns ns 1.25 V 2 of 3 QW-R502-769.e UTT75N08 Preliminary Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 3 QW-R502-769.e