UNISONIC TECHNOLOGIES CO., LTD UTD36N03 Power MOSFET N-CHANNEL ENHANCEMENT MODE FEATURES * RDS(ON) < 17mΩ @VGS = 10 V * Low capacitance * Optimized gate charge * Fast switching capability * Avalanche energy specified SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Ordering Number Lead Free Halogen Free UTD36N03L-TA3-T UTD36N03G-TA3-T UTD36N03L-TN3-T UTD36N03G-TN3-T UTD36N03L-TN3-R UTD36N03G-TN3-R www.unisonic.com.tw Copyright © 2013 Unisonic Technologies Co., Ltd Package TO-220 TO-252 TO-252 Pin Assignment 1 2 3 G D S G D S G D S Packing Tube Tube Tape Reel 1 of 5 QW-R502-179.B UTD36N03 Power MOSFET ABSOLUTE MAXIMUM RATINGS (TJ=25°C, unless otherwise specified) PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) RATINGS UNIT 30 V ±20 V 43.4 A 173.6 A TO-220 1.9 W Power Dissipation PD TO-252 1.6 W Junction Temperature TJ +175 °С Storage Temperature TSTG -55 ~ +175 °С Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. SYMBOL VDSS VGSS ID IDM THERMAL DATA PARAMETER Junction-to-Ambient SYMBOL TO-220 TO-252 θJA RATINGS 62.5 75 UNIT °С/W °С/W ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current ON CHARACTERISTICS Gate-Threshold Voltage SYMBOL Drain-Source On-State Resistance RDS(ON) TEST CONDITIONS BVDSS IDSS IGSS VGS =0V, ID =250 µA VDS =24V, VGS =0V VGS = ±20V, VGS =0V 30 VGS(TH) VDS=VGS, ID=250 µA VGS =4.5V, ID =12A VGS=10 V, ID =25 A 1 DYNAMIC CHARACTERISTICS Input Capacitance CISS VDS =25 V, VGS =0V, f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Turn-ON Delay Time tD(ON) Turn-ON Rise Time tR VDS =15 V, VGS =10V, RG =10Ω, RL =0.6 Ω Turn-OFF Delay Time tD(OFF) Turn-OFF Fall-Time tF Total Gate Charge QG Gate-Source Charge QGS VDS =15V,VGS =10V,ID =36 A Gate-Drain Charge QGD SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD IS=25A, VGS=0V Maximum Continuous Drain-Source IS Diode Forward Current Maximum Pulsed Drain-Source Diode ISM Forward Current Reverse Recovery Time tRR VR=15V,IF=IS, dIF/dt=100A/μs Reverse Recovery Charge QRR Notes: 1. Pulse width limited by TJ(MAX) 2. Pulse width ≤300us, duty cycle ≤2%. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 0.05 10 1 100 1.5 18 14 2 22 17 V mΩ 690 160 110 pF 6 10 33 19 18.5 4.2 2.9 0.97 V µA nA ns nC 1.2 V 43.4 A 173.6 15 2 18 3 ns nC 2 of 5 QW-R502-179.B UTD36N03 TYPICAL CHARACTERISTICS Drain Current,ID (A) Gate Threshold Voltage,VGS(TH) (V) Ider (％) Pder (％) Drain Current,ID (A) Drain Current,ID (A) Power MOSFET UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 5 QW-R502-179.B Capacitance,C (pF) Gate to Source Voltage,VGS (V) Reverse Drain Current,IS (A) Drain to Source OnResistance,RDS(ON) (mΩ) Drain Current,ID (A) Drain Current,ID (A) UTD36N03 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Power MOSFET TYPICAL CHARACTERISTICS(Cont.) QW-R502-179.B 4 of 5 UTD36N03 TYPICAL CHARACTERISTICS(Cont.) ZthJmb (K/W) Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 5 QW-R502-179.B