SSFN6816 30V Dual N-Channel MOSFET DESCRIPTION The SSFN6816 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V while retaining a 12V VGS(MAX) rating. It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load switch, facilitated by its common-drain configuration. Schematic diagram GENERAL FEATURES ● VDS = 30V,ID = 8A RDS(ON) < 30mΩ @ VGS=2.5V RDS(ON) < 24mΩ @ VGS=3.1V RDS(ON) < 22mΩ @ VGS=4.0V RDS(ON) < 20mΩ @ VGS=4.5V RDS(ON) < 17mΩ @ VGS=10V Marking and Pin Assignment ESD Rating：2000V HBM ● High Power and current handing capability ● Lead free product ● Surface Mount Package DFN2×5-6L Top View PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Device Package SSFN6816 SSFN6816 DFN2×5-6L Reel Size Tape Width Quantity 3000 units ABSOLUTE MAXIMUM RATINGS (T A=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage V DS 30 V Gate-Source Voltage V GS ±12 V ID 8 A IDM 45 A PD 1.7 W TJ,TSTG -55 To 150 ℃ R θJA 40 ℃/W Drain Current-Continuous@ Current-Pulsed (Note 1) Maximum Power Dissipation Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS Thermal Resistance,Junction-to-Ambient (Note 2) ELECTRICAL CHARACTERISTICS (T A=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA Zero Gate Voltage Drain Current IDSS V DS=30V,VGS=0V www.goodark.com Page 1 of 4 30 V 1 μA Rev.1.1 SSFN6816 30V Dual N-Channel MOSFET Gate-Body Leakage Current Gate-Source Breakdown Voltage IGSS VGS=±10V,VDS=0V 10 BVGSO VDS=0V, IG=±250uA ±12 VGS(th) VDS=VGS,ID=250μA 0.6 uA V ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Drain-Source On-State Resistance Forward Transconductance RDS(ON) gFS 1 1.5 V VGS=10V, ID=8A 14 17 VGS=4.5V, ID=6A 17 20 VGS=4.0V, ID=4A 18 22 VGS=3.1V, ID=4A 20 24 VGS=2.5V, ID=3A 23 30 V DS=5V,ID=8A 17 S 870 PF 130 PF 100 PF 1.5 Ω 4 nS 10 nS 28 nS mΩ DYNAMIC CHARACTERISTICS (Note4) Input Capacitance Clss Output Capacitance Coss Reverse Transfer Capacitance Crss Gate resistance Rg V DS=15V,VGS=0V, F=1.0MHz VDS=0V,VGS=0V, F=1.0MHz SWITCHING CHARACTERISTICS (Note 4) Turn-on Delay Time td(on) Turn-on Rise Time tr Turn-Off Delay Time td(off) VDD=15V,V GS=10V, RGEN=3Ω，RL=1.25Ω Turn-Off Fall Time tf 7 nS Total Gate Charge Qg 10.5 nC Gate-Source Charge Qgs 1.9 nC Gate-Drain Charge Qgd 4.1 nC VDS=15V,ID=8A,VGS=4.5V DRAIN-SOURCE DIODE CHARACTERISTICS Diode Forward Voltage (Note 3) VSD Diode Forward Current (Note 2) IS VGS=0V,IS=1A 0.76 0.9 V 4.5 A NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production testing. www.goodark.com Page 2 of 4 Rev.1.1 SSFN6816 30V Dual N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS ton tr Vdd td(on) Rl Vin Vgs Rgen D 90% Vout toff tf td(off) VOUT 90% INVERTED 10% 10% G 90% VIN S 50% 50% 10% PULSE WIDTH Figure 2:Switching Waveforms Normalized Effective Transient Thermal Impedance Figure 1: Switching Test Circuit Square Wave Pluse Duration(sec) Figure 3: Normalized Maximum Transient Thermal Impedance www.goodark.com Page 3 of 4 Rev.1.1 SSFN6816 30V Dual N-Channel MOSFET DFN2×5-6L PACKAGE INFORMATION Dimensions in Millimeters (UNIT: mm) COMMON DIMENSIONS(MM) PKG. REF. A A1 A3 D E D2 E2 L b e W:VERY VERY THIN MIN. 0.70 0.00 1.95 4.95 1.35 2.75 0.40 0.20 NOM. 0.75 — 0.2 REF. 2.00 5.00 1.50 2.90 0.50 0.25 0.5 BCS. MAX. 0.80 0.05 2.05 5.05 1.60 3.00 0.60 0.30 NOTES 1. All dimensions are in millimeters. 2. Tolerance ±0.10mm (4 mil) unless otherwise specified 3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 5 mils. 4. Dimension L is measured in gauge plane. 5. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact www.goodark.com Page 4 of 4 Rev.1.1