AP50L02S/P
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low Gate Charge
D
▼ Simple Drive Requirement
▼ Fast Switching
BVDSS
25V
RDS(ON)
17mΩ
ID
G
40A
S
Description
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
G D
S
TO-263(S)
The TO-263 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage
applications such as DC/DC converters. The through-hole version
(AP50L02P) is available for low-profile applications.
G
Absolute Maximum Ratings
Symbol
Parameter
D
TO-220(P)
S
Rating
Units
VDS
Drain-Source Voltage
25
V
VGS
Gate-Source Voltage
± 20
V
ID@TC=25℃
Continuous Drain Current, VGS @ 10V
40
A
ID@TC=100℃
Continuous Drain Current, VGS @ 10V
27
A
1
IDM
Pulsed Drain Current
140
A
PD@TC=25℃
Total Power Dissipation
44.6
W
Linear Derating Factor
0.36
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Value
Unit
Rthj-case
Thermal Resistance Junction-case
Max.
2.8
℃/W
Rthj-amb
Thermal Resistance Junction-ambient
Max.
62
℃/W
Data & specifications subject to change without notice
200218032
AP50L02S/P
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
25
-
-
V
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
-
0.037
-
V/℃
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=20A
-
-
17
mΩ
VGS=4.5V, ID=10A
-
-
35
mΩ
VDS=VGS, ID=250uA
1
-
3
V
VDS=10V, ID=20A
-
10
-
S
VDS=25V, VGS=0V
-
-
1
uA
Drain-Source Leakage Current (Tj=150 C)
VDS=20V, VGS=0V
-
-
25
uA
Gate-Source Leakage
VGS= ± 20V
-
-
±100
nA
ID=20A
-
11.5
-
nC
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
VGS=0V, ID=250uA
o
IDSS
Drain-Source Leakage Current (Tj=25 C)
o
IGSS
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=20V
-
2.1
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=5V
-
8.4
-
nC
VDS=15V
-
7
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=20A
-
60
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
17
-
ns
tf
Fall Time
RD=0.75Ω
-
9
-
ns
Ciss
Input Capacitance
VGS=0V
-
390
-
pF
Coss
Output Capacitance
VDS=25V
-
245
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
100
-
pF
Min.
Typ.
-
-
40
A
-
-
140
A
-
-
1.26
V
Source-Drain Diode
Symbol
IS
ISM
VSD
Parameter
Test Conditions
VD=VG=0V , VS=1.26V
Continuous Source Current ( Body Diode )
Pulsed Source Current ( Body Diode )
2
Forward On Voltage
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.
1
Tj=25℃, IS=40A, VGS=0V
Max. Units
AP50L02S/P
160
120
o
T C =25 C
140
V G =10V
T C =150 o C
V G =10V
100
V G =8.0V
ID , Drain Current (A)
ID , Drain Current (A)
120
V G =8.0V
100
80
V G =6.0V
60
80
60
V G =6.0V
40
40
20
V G =4.0V
20
V G =4.0V
0
0
0
1
2
3
4
5
6
0
7
2
3
4
5
6
7
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.8
34
I D =20A
I D =10A
T c =25 ℃
V G =10V
1.6
Normalized R DS(ON)
30
26
RDS(ON) (mΩ )
1
22
18
1.4
1.2
1
0.8
14
0.6
10
-50
2
3
4
5
6
7
8
9
10
V GS (V)
Fig 3. On-Resistance v.s. Gate Voltage
0
50
100
11
T j , Junction Temperature ( o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
150
50
50
40
40
30
30
PD (W)
ID , Drain Current (A)
AP50L02S/P
20
20
10
10
0
0
25
50
75
100
125
150
0
50
100
150
T c ,Case Temperature ( o C)
T c , Case Temperature ( o C)
Fig 5. Maximum Drain Current v.s.
Fig 6. Typical Power Dissipation
Case Temperature
1000
1
Normalized Thermal Response (R thjc)
DUTY=0.5
100
ID (A)
10us
100us
10
1ms
10ms
T c =25 o C
Single Pulse
0.2
0.1
0.1
0.05
PDM
0.02
SINGLE PULSE
t
0.01
T
Duty factor = t/T
Peak Tj = P DM x Rthjc + TC
100ms
1
1
10
V DS (V)
Fig 7. Maximum Safe Operating Area
100
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Pulse Width (s)
Fig 8. Effective Transient Thermal Impedance
AP50L02S/P
f=1.0MHz
16
10000
I D =20A
VGS , Gate to Source Voltage (V)
14
V DS =12V
V DS =16V
V DS =20V
12
1000
10
Ciss
C (pF)
8
Coss
6
100
Crss
4
2
0
0
5
10
15
20
25
30
10
1
6
11
Q G , Total Gate Charge (nC)
16
21
26
V DS (V)
Fig 9. Gate Charge Characteristics
Fig 10. Typical Capacitance Characteristics
100
3
10
2
VGS(th) (V)
T j =150 o C
IS(A)
T j =25 o C
1
1
0
0.1
0.1
0.3
0.5
0.7
0.9
1.1
1.3
V SD (V)
Fig 11. Forward Characteristic of
Reverse Diode
1.5
-50
0
50
100
o
T j , Junction Temperature( C)
Fig 12. Gate Threshold Voltage v.s.
Junction Temperature
150
AP50L02S/P
VDS
90%
RD
VDS
D
RG
TO THE
OSCILLOSCOPE
0.6 x RATED VDS
G
+
10%
VGS
S
10 V
VGS
-
td(on)
Fig 13. Switching Time Circuit
td(off) tf
tr
Fig 14. Switching Time Waveform
VG
VDS
5V
0.8 x RATED VDS
G
S
QG
TO THE
OSCILLOSCOPE
D
QGS
QGD
VGS
+
1~ 3 mA
IG
ID
Charge
Fig 15. Gate Charge Circuit
Fig 16. Gate Charge Waveform
Q