EMT2 / UMT2N / IMT2A Transistors General purpose (dual transistors) EMT2 / UMT2N / IMT2A zExternal dimensions (Unit : mm) zFeatures 1) Two 2SA1037AK chips in a EMT or UMT or SMT package. zEquivalent circuits (3) (2) (6) (4) (2) (1) 1.2 1.6 (5) 0.5 IMT2A (1) (3) (5) 0.13 EMT2 / UMT2N (4) 0.5 0.5 1.0 1.6 0.22 EMT2 (6) Each lead has same dimensions ROHM : EMT6 Tr1 Tr2 Tr1 Tr2 UMT2N V −6 V −150 mA Collector power dissipation 150(TOTAL) PC mW 300(TOTAL) IMT2A Junction temperature Storage temperature Tj 150 °C Tstg −55 to +150 °C 0.1Min. Each lead has same dimensions ROHM : UMT6 EIAJ : SC-88 ∗1 ∗2 IMT2A (4) (3) (5) 0.3 ∗1 120mW per element must not be exceeded. ∗2 200mW per element must not be exceeded. 1.6 zPackage, marking, and packaging specifications IMT2A Package EMT6 UMT6 SMT6 Marking Code T2 T2 T2R TR T2 T108 8000 3000 3000 Basic ordering unit (pieces) 2.8 0.3Min. 0.8 UMT2N 0~0.1 EMT2 0.15 Type 1.1 IC EMT2 / UMT2N 0.9 −50 VEBO 0.7 VCEO Emitter-base voltage (1) Collector-emitter voltage 2.1 (2) V 0~0.1 Unit −60 (6) Limits VCBO 0.15 Symbol Collector current 1.3 1.25 Collector-base voltage 2.0 (3) (2) (1) (6) (5) 0.2 zAbsolute maximum ratings (Ta=25°C) Parameter 0.65 (1) 0.65 (3) (2) 0.95 0.95 1.9 2.9 (6) (4) (4) (5) Each lead has same dimensions ROHM : SMT6 EIAJ : SC-74 zElectrical characteristics (Ta=25°C) Symbol Min. Typ. Max. Unit Collector-base breakdown voltage Parameter BVCBO −60 − − V IC=−50µA Conditions Collector-emitter breakdown voltage BVCEO −50 − − V IC=−1mA Emitter-base breakdown voltage Collector cutoff current BVEBO ICBO −6 − − − − −0.1 V µA IE=−50µA VCB=−60V VEB=−6V IEBO − − −0.1 µA VCE(sat) − − −0.5 V IC/IB=−50mA/−5mA hFE 120 − 560 − VCE=−6V, IC=−1mA Transition frequency fT − 140 − MHz Output capacitance Cob − 4 5 pF Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio VCE=−12V, IE=2mA, f=100MHz ∗ VCE=−12V, IE=0A, f=1MHz ∗Transition frequency of the device. Rev.A 1/2 EMT2 / UMT2N / IMT2A Transistors zElectrical characteristics curves −5 −2 −1 −0.5 −0.2 −0.1 −0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4 −1.6 −24.5 −21.0 −6 −17.5 −14.0 −4 −10.5 −7.0 −2 −3.5µA −0.4 −0.8 −1.2 −1.6 DC CURRENT GAIN : hFE 25˚C 100 −40˚C 200 100 50 50 −250 −200 −150 −100 −20 −50µA IB=0 0 −1 −2 −3 −4 −5 COLLECTOR TO EMITTER VOLTAGE : VCE (V) −1 Ta=25˚C −0.5 −0.2 IC/IB=50 −0.1 20 10 −0.05 −2 −5 −10 −20 −0.2 −0.5 −1 −50 −100 1000 TRANSITION FREQUENCY : fT (MHz) −0.2 −0.1 Ta=100˚C 25˚C −40˚C −0.05 −0.2 −0.5 −1 −2 −5 −10 −20 −50 −100 COLLECTOR CURRENT : IC (mA) Fig.7 Collector-emitter saturation voltage vs. collector current (II) 500 200 100 50 0.5 1 2 5 10 20 50 −5 −10 −20 −50 −100 Fig.6 Collector-emitter saturation voltage vs. collector current (I) Ta=25˚C VCE= −12V lC/lB=10 −2 COLLECTOR CURRENT : IC (mA) Fig.5 DC current gain vs. collector current (II) Fig.4 DC current gain vs. collector current (I) −0.5 −0.2 −0.5 −1 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) −1 VCE= −6V −5 −10 −20 −50 −100 −2 100 EMITTER CURRENT : IE (mA) Fig.8 Gain bandwidth product vs. emitter current COLLECTOR OUTPUT CAPACITANCE : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF) −0.2 −0.5 −1 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) −500 −450 −400 −350 −300 Fig.3 Grounded emitter output characteristics (II) Ta=100˚C 200 Ta=25˚C −40 Fig.2 Grounded emitter output characteristics (I) VCE= −5V −3V −1V Ta=25˚C −60 IB=0 −2.0 500 500 −80 COLLECTOR TO MITTER VOLTAGE : VCE (V) Fig.1 Grounded emitter propagation characteristics DC CURRENT GAIN : hFE −28.0 −8 0 BASE TO EMITTER VOLTAGE : VBE (V) −100 −31.5 COLLECTOR CURRENT : IC (mA) −10 −35.0 Ta=25˚C COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) −20 −10 VCE= −6V Ta=100˚C 25˚C −40˚C COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : Ic (mA) −50 20 Ta=25˚C f=1MHz IE=0A IC=0A Cib 10 Co b 5 2 −0.5 −1 −2 −5 −10 −20 COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB (V) Fig.9 Collector output capacitance vs. collector-base voltage Emitter inputcapacitance vs. emitter-base voltage Rev.A 2/2 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. 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