UNISONIC TECHNOLOGIES CO., LTD ULB124 NPN SILICON TRANSISTOR NPN EPITAXIAL PLANAR TRANSISTOR 1 TO-126 DESCRIPTION The UTC ULB124 is designed for high voltage, high speed switching inductive circuits, and amplifier applications. FEATURES 1 * High Speed Switching * Low Saturation Voltage * High Reliability TO- 251 1 TO-220 ORDERING INFORMATION Ordering Number Lead Free Halogen Free ULB124L-xx-TA3-T ULB124G-xx-TA3-T ULB124L-xx-TM3-T ULB124G-xx-TM3-T ULB124L-xx-T60-K ULB124G-xx-T60-K www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd Package TO-220 TO-251 TO-126 Pin Assignment 1 2 3 B C E B C E B C E Packing Tube Tube Bulk 1 of 4 QW-R213-013.G ULB124 NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATING (TA=25°C) PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage RATINGS UNIT 600 V 400 V 8 V DC 2 A Collector Current IC Pulse 4 A DC 1 A Base Current IB Pulse 2 A TO-220 35 Power Dissipation (TC=25°C) TO-251 PD 20 W TO-126 1.4 Junction Temperature TJ 150 °C Storage Temperature TSTG -40 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. SYMBOL VCBO VCEO VEBO ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified.) PARAMETER OFF CHARACTERISTICS Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current ON CHARACTERISTICS SYMBOL BVCBO BVCEO BVEBO ICBO IEBO hFE1 hFE2 hFE3 DC Current Gain(Note) Collector-Emitter Saturation Voltage (Note) VCE(SAT) Base-Emitter Saturation Voltage (Note) VBE(SAT) TEST CONDITIONS IC=1mA IC=10mA IE=1mA VCB=600V VEB=9V, IC=0 600 400 8 VCE= 5V, IC=0.3A VCE= 5V, IC=0.5A VCE= 5V, IC=1A IC=0.1A, IB=10mA IC=0.3A, IB=30mA IC=0.1A, IB=10mA IC=0.3A, IB=30mA 10 10 6 SWITCHING CHARACTERISTICS Gain-Bandwidth Product fT VCE=10V, IC=0.3A, f=1MHz Note: Pulse Test : Pulse Width≤380µs, Duty Cycle≤2% MIN TYP MAX UNIT 10 10 V V V µA µA 40 0.3 0.8 0.9 1.2 15 V V V V MHz CLASSIFICATION OF hFE1 RANK Range B1 10 ~ 17 B2 13 ~ 22 B3 18 ~ 27 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw B4 23 ~ 32 B5 28 ~ 37 B6 33 ~ 40 2 of 4 QW-R213-013.G ULB124 NPN SILICON TRANSISTOR TYPICAL CHARACTERISTICS Saturation Voltage vs. Collector Current 10000 On Voltage vs. Collector Current 1000 VCE = 5V 1000 100 VBE(SAT) @IC = 10IB 1 1000 10 100 Collector Current, IC (mA) 10000 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 100 1 1000 10000 10 100 Collector Current (mA) 3 of 4 QW-R213-013.G ULB124 NPN SILICON TRANSISTOR TYPICAL CHARACTERISTICS(Cont.) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R213-013.G