UNISONIC TECHNOLOGIES CO., LTD DTC115E NPN SILICON TRANSISTOR NPN DIGITAL TRANSISTOR (BUILT- IN BIAS RESISTORS) FEATURES * Built-in bias resistors that implies easy ON/OFF applications. * The bias resistors are thin-film resistors with complete isolation to allow negative input. EQUIVALENT CIRCUIT ORDERING INFORMATION Ordering Number DTC115EG-AE3-R DTC115EG-AL3-R DTC115EG-AN3-R Note: Pin Assignment: G: GND I: IN Package SOT-23 SOT-323 SOT-523 Pin Assignment 1 2 3 G I O G I O G I O Packing Tape Reel Tape Reel Tape Reel O: OUT MARKING www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd 1 of 4 QW-R206-055.D DTC115E NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATING (TA=25°C, unless otherwise specified) PARAMETER RATINGS UNIT 50 V -10 ~ +40 V 20 Output Current mA 100 SOT-23/SOT-323 200 mW Power Dissipation PC SOT-523 150 mW Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. Supply Voltage Input Voltage SYMBOL VCC VIN IOUT IOUT(MAX) ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified) PARAMETER SYMBOL VI(OFF) Input Voltage VI(ON) Output Voltage VOUT(ON) Input Current IIN Output Current IO(OFF) DC Current Gain hFE Input Resistance R1 Resistance Ratio R2/R1 Transition Frequency fT Note: Transition frequency of the device TEST CONDITIONS VCC=5V, IOUT=100μA VOUT=0.3V, IOUT=1mA IOUT=5mA, IIN=0.25mA VIN= 5V VCC=50V, VIN=0V VOUT= 5V, IOUT= 5mA VCE=10V, IE=-5mA, f=100MHz (Note) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN 3 82 70 0.8 TYP MAX UNIT 0.5 V 0.1 0.3 0.15 0.5 V mA μA 100 1 250 130 1.2 kΩ MHz 2 of 4 QW-R206-055.D DTC115E TYPICAL CHARACTERISTICS Output Currrn vs. Output-input Voltage 140 120 12 100 10 80 60 40 20 0 Output Currrn vs. Output Voltage 14 Output Current, IO (mA) Output Currrnt, IO(uA) NPN SILICON TRANSISTOR 8 6 4 2 0 20 140 40 60 80 100 120 140 0 160 0 15 30 45 60 75 90 105 Output-input Voltage, VOI( V) Output Voltage, VO (V) Output Current vs. GND - input Voltage DC Current Gain vs. Output Current 120 1000 100 DC Current Gain, GI Output Currrnt, IO(uA) 120 80 60 40 100 20 0 0 3 6 9 12 15 18 21 1 GND - input Voltage, VGI( V) 10 Output Current, IO (mA) 100 Output Current, IO (mA) Input Voltage, VI(ON) (V) VO=5V 10 24 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 4 QW-R206-055.D DTC115E NPN SILICON TRANSISTOR TYPICAL CHARACTERISTICS (Cont.) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R206-055.D