UNISONIC TECHNOLOGIES CO., LTD BC847BS NPN EPITAXIAL SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER DESCRIPTION The UTC BC847BS is a dual NPN transistors; it uses UTC’s advanced technology to provide customers high DC current gain, low power dissipation and low collector-emitter saturation voltage. The UTC BC847BS is suitable for a high gain, low noise and general purpose amplifier. FEATURES * Low saturation voltage * High DC current gain ORDERING INFORMATION Ordering Number Package BC847BSG-AL6-R Note: Pin Assignment: E: Emitter SOT-363 B: Base C: Collector 1 E1 Pin Assignment 2 3 4 5 B1 C2 E2 B2 6 C1 Packing Tape Reel MARKING 6 5 4 8BBG 1 2 3 www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd 1 of 3 Ver.a UNISONIC TECHNOLOGIES CO., LTD BC847BS NPN EPITAXIAL SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise noted) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCES 50 V Collector-Emitter Voltage VCEO 45 V Emitter-Base Voltage VEBO 6.0 V Continuous Collector Current IC 100 mA 325 mW Power Dissipation PD Derate above 25°C 2.8 mW/°C Junction Temperature TJ -55~+150 °C Storage Temperature Range TSTG -55~+150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER Junction to Ambient SYMBOL θJA RATINGS 357 UNIT °C/W ELECTRICAL CHARACTERISTICS (TA =25°C, unless otherwise noted) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Turn-On Voltage DC Current Gain Transition Frequency Output Capacitance Noise Figure SYMBOL TEST CONDITIONS BVCES IC=10µA, IE=0 BVCEO IC=10mA, IB=0 BVEBO IE=10µA, IC=0 VCB=30V ICBO VCB=30V, TA=150°C IC=10mA, IB=0.5mA VCE(sat) IC=100mA, IB=5.0mA IC=2.0mA, VCE=5.0V VBE(on) IC=10mA, VCE=5.0V hFE IC=2.0mA, VCE=5.0V fT IC=10mA, VCE=5.0V, f=100MHz Cobo VCB=10V, f=1.0MHz IC=0.2mA, VCE=5.0V, RS=2.0kΩ, NF f=1.0kHz, BW=200Hz UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX 50 45 6.0 15 5.0 0.25 0.6 0.58 0.70 0.77 200 450 100 4.5 10 UNIT V V V nA μA V V V V MHz pF dB 2 of 3 Ver.a BC847BS Preliminary NPN EPITAXIAL SILICON TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 3 Ver.a