MEMS Oscillator, Low Power, LVCMOS/HCMOS Compatible, 1.000 MHz to 110.000 MHz Features: IM801 Series Typical Applications: MEMS Technology Direct pin to pin drop-in replacement for industry-standard packages LVCMOS/HCMOS Compatible Output Industry-standard package 2.0 x 1.6, 2.5 x 2.0, 3.2 x 2.5, 5.0 x 3.2 mm x mm Pb-free, Halogen-free, Antimony-free RoHS and REACH compliant Fast delivery times Fibre Channel Server and Storage GPON, EPON 100M / 1G /10G Ethernet Electrical Specifications: Frequency Range 1.000 MHz to 110.000MHz Frequency Stability See Part Number Guide Operating Temperature Supply Voltage (Vdd) 10% See Part Number Guide See Part Number Guide 3.8 mA typ./ 4.5 mA max 3.7 mA typ./ 4.2 mA max 3.5 mA typ./ 4.1 mA max 4.2 mA max 4.0 mA max 2.1 µA typ./ 4.3 µA max 1.1 µA typ. / 2.5 µA max 0.2 µA typ. / 1.3 µA max Current Consumption OE Disable Current Standby Current Waveform Output Symmetry Rise / Fall Time Logic “1” Logic “0” Input High Voltage Input Low Voltage Input Pull-up Impedance Startup Time Enable/Disable time Resume Time RMS Period Jitter Peak-to-peak Period Jitter RMS Phase Jitter (random) LVCMOS / HCMOS 45%/55% 1.0 nSec typ./ 2.0 nSec max 1.3 nSec typ./ 2.5 nSec max 90% of Vdd min 10% of Vdd max 70% of Vdd min 30% of Vdd max 50kΩ min / 87kΩ typ. 150kΩ max 2.0MΩ min 5.0 mSec max 130 nSec max 5.0 mSec max 1.8pSec typ./ 3.0pSec max 1.8pSec typ./ 3.0pSec max. 12.0 pSec typ./ 25.0 pSec max 14.0 pSec typ./ 30.0 pSec max 0.5pSec typ./ 0.9 pSec max 1.3pSec typ./ 2.0pSec max Inclusive of Initial Tolerance, Operating Temperature Range, Load, Voltage, and Aging No load condition, F = 20 MHz, Vdd = +2.8 V to +3.3 V No load condition, F = 20 MHz, Vdd = +2.5 V No load condition, F = 20 MHz, Vdd = +1.8 V Vdd = +2.5 V to +3.3 V, OE = GND, Output in high-Z state Vdd = +1.8 V, OE = GND, Output in high-Z state ST = GND, Vdd = +2.8 V to +3.3V ST = GND, Vdd = +2.5 V ST = GND, Vdd = +1.8 V 50% of waveform all Vdds Vdd = +2.5 V, +2.8 V, + 3.0 V or +3.3 V from 20% to 80% of waveform Vdd = +1.8 V from 20% to 80% of waveform Pin 1, OE or ST Pin 1, OE or ST Pin 1, OE logic high or logic low or ST logic high Pin 1, ST logic Low Measured from the time Vdd reaches its rated min value F = 110 Mhz. For other frequencies, T_oe =100 nSec = 3 cycles Measured from the time ST pin crosses 50% threshold F = 75 MHz, Vdd = +2.5 V, +2.8 V, + 3.0 V or +3.3 V F = 75 MHz, Vdd = +1.8 V F = 75 MHz, Vdd = +2.5 V, +2.8 V, + 3.0 V or +3.3 V F = 75 MHz, Vdd = +1.8 V F = 75 MHz, Integration Bandwidth = 900 kHz to 7.5 MHz F = 75 MHz, Integration Bandwidth = 12 kHz to 20.0 MHz Notes: All min and max limits are specified over temperature and rated operating voltage with 15pF output unless otherwise stated. Typical values are at +25ºC and nominal supply voltage. Absolute Maximum Limits Storage Temperature Supply Voltage (Vdd) Electrostatic Discharge Solder Temperature (follow standard Pb free soldering guidelines) Junction Temperature -65ºC to +150ºC -0.5 VDC to 4.0 VDC 2000 V max 260ºC max 150ºC max ILSI America Phone 775-851-8880 ● Fax 775-851-8882 ●email: [email protected] ● www.ilsiamerica.com Specifications subject to change without notice Rev: 01/30/16_A Page 1 of 9 MEMS Oscillator, Low Power, LVCMOS/HCMOS Compatible, 1.000 MHz to 110.000 MHz IM801 Series Ordering Information: Part Number Guide Packages IM801B – 5.0 x 3.2 IM801C – 3.2 x 2.5 IM801D – 2.5 x 2.0 IM801E – 2.0 x 1.6 Input Voltage Operating Temperature Output Drive Strength 1 = +1.8 V 6 = +2.5 V 2 = +2.8 V 7 = +3.0 V 3 = +3.3 V 1 = 0ºC to +70ºC 2 = -40ºC to +85ºC 3 = -20ºC to +70ºC - = Default (see tables 2 through 6) Stability (ppm) F = ±20 A = ±25 B = ±50 Select Function H = Tri-State S = Standby O = N/C Frequency - Frequency Sample Part Number: IM801C-62-FS-20.0000MHz This 20.0000 MHz oscillator in a 3.2 x 2.5 package with stability ±20 ppm from -40ºC to +85ºC using a supply voltage of +2.5 V. The Output Drive Strength (Rise and Fall Time) is the default value 1.0 nSec per Table 3 with 15 pF load. With Pin 1 function as Standby Sample Part Number: IM801D-71RAO-66.0000MHz This 66.0000 MHz oscillator in a 2.5 x 2.0 package with stability ±25 ppm from 0ºC to +70ºC using a supply voltage of +3.0 V. The Output Drive Strength (Rise and Fall Time) is the R drive strength is 4.54 nSec per Table 5 with 30 pF load. With Pin 1 function is not connected Notes: Not all options are available at all frequencies and temperatures ranges. Please consult with sales department for any other parameters or options. Oscillator specification subject to change without notice. Test Circuit Waveform ILSI America Phone 775-851-8880 ● Fax 775-851-8882 ●email: [email protected] ● www.ilsiamerica.com Specifications subject to change without notice Rev: 01/30/16_A Page 2 of 9 MEMS Oscillator, Low Power, LVCMOS/HCMOS Compatible, 1.000 MHz to 110.000 MHz IM801 Series Performance Plots: Figure 1: Idd vs Frequency Figure 2: Frequency vs Temperature Figure 3: RMS Period Jitter vs Frequency Figure 4: Duty Cycle vs Frequency Figure 5: 20% to 80% Rise Time vs Temperature Figure 6: 20% to 80% Fall Time vs Temperature ILSI America Phone 775-851-8880 ● Fax 775-851-8882 ●email: [email protected] ● www.ilsiamerica.com Specifications subject to change without notice Rev: 01/30/16_A Page 3 of 9 MEMS Oscillator, Low Power, LVCMOS/HCMOS Compatible, 1.000 MHz to 110.000 MHz IM801 Series Performance Plots (Cont.) Figure 7: RMS Integrated Phase Jitter Random (12 kHz to 20 MHz) vs Frequency Figure 8: RMS Integrated Phase Jitter Random (900 kHz to 20 MHz) vs Frequency Notes: All plots are measured with 15pF load at room temperature unless otherwise stated. Phase noise plots are measured with Agilent E5052B signal source analyzer integration range is up to 5 MHz for carrier frequencies below 40 MHz Environmental Specifications: Environmental Compliance Parameter Condition/Test Method MIL-STD-883F, Method 2002 MIL-STD-883F, Method 2007 JESD22, Method A104 MIL-STD-883F, Method 2003 MSL1 at +260ºC Mechanical Shock Mechanical Vibration Temperature Cycle Solderability Moisture Sensitivity Level Pb Free Solder Reflow Profile Units are backward compatible with +240ºC reflow processes Ts max to TL (Ramp-up Rate) Preheat Temperature min (Ts min) Temperature typ (Ts typ) Temperature max (Ts max) Time (Ts) Ramp-up Tate (TL to Tp Time Maintained Above Temperature (TL) Time (TL) Peak Temperature (Tp) Time within 5ºC to Peak Temperature (Tp) Ramp-down Rate Tune 25ºC to Peak Temperature Moisture Sensitivity Level (MSL) 3ºC / second max 150ºC 175ºC 200ºC 60 to180 seconds 3ºC / second max 217ºC 60 to 150 seconds 260ºC max for seconds 20 to 40 seconds 6ºC / second max 8 minute max Level 1 ILSI America Phone 775-851-8880 ● Fax 775-851-8882 ●email: [email protected] ● www.ilsiamerica.com Specifications subject to change without notice Rev: 01/30/16_A Page 4 of 9 MEMS Oscillator, Low Power, LVCMOS/HCMOS Compatible, 1.000 MHz to 110.000 MHz IM801 Series Pin Functionally Pin Description Pin Symbol 1 OE Tri-state ST Standby N/C No Connect Functionality High or Open = specified frequency output Low = Output is high impedance, only output is disabled. High or Open = specified frequency output. Low = Output is low. Device goes to sleep mode. Supply current reduces to standby current. Any voltage between 0.0 V to Vdd or Open = specified frequency output Pin 1 has no functiion Electrical ground Oscillator output Power supply voltage Pin Assignments OE ST 1 N/C Vdd 3 OUT Top View 2 GND Power 3 Out Output 4 Vdd Power Notes: 1. In OE or ST mode, a pull-up resistor of 10.0 kΩ or less is recommended if Pin 1 is not externally driven. If Pin 1 needs to be left floating, use the NC option. 2. A capacitor of value 0.1 µF or higher between Pin 4 (Vdd) and Pin 1 (GND) is required. Pin 1 Configuration Options (OE, or 4 GND 2 , or NC) Pin 1 of the IM801 can be factory-programmed to support three modes: Output Enable (OE), Standby (ST) or No Connect (NC). Output Enable (OE) Mode In the OE mode, applying logic Low to the OE pin only disables the output driver and puts it in Hi-Z mode. The core of the device continues to operate normally. Power consumption is reduced due to the inactivity of the output. When the OE pin is pulled High, the output is typically enabled in <1 µSec. Standby Mode In the ST mode, a device enters into the standby mode when Pin 1 pulled Low. All internal circuits of the device are turned off. The current is reduced to a standby current, typically in the range of a few µA. When ST is pulled High, the device goes through the “resume” process, which can take up to 5 mSec. No Connect (NC) Mode In the NC mode, the device always operates in its normal mode and outputs the specified frequency regardless of the logic level on Pin 1. Table 1 below summarizes the key relevant parameters in the operation of the device in OE, ST, or NC mode. Parameters Active current 20.0 MHz (max +1.80 VDC) OE disable current (max +1.80 VDC) Standby current (typical +1.80 VDC) OE enable time at 20.0 MHz (max) Resume time from standby (max, all frequency) Output driver in OE disable/standby mode Table 1 OE vs. OE 4.1 mA 4.0 mA N/A 200 nSec ST 4.1 mA N/A 0.6 µA N/A NC 4.1 mA N/A N/A N/A N/A 5 mSec N/A High Z vs. NC N/A ILSI America Phone 775-851-8880 ● Fax 775-851-8882 ●email: [email protected] ● www.ilsiamerica.com Specifications subject to change without notice Rev: 01/30/16_A Page 5 of 9 MEMS Oscillator, Low Power, LVCMOS/HCMOS Compatible, 1.000 MHz to 110.000 MHz IM801 Series Timing Diagrams: Figure 9: Startup Timing (OE/ST Mode) Figure 10: Standby Resume Timing (ST Mode Only) Figure 11: OE Enable Timing (OE Mode Only) Figure 12: OE Disable Timing (OE Mode Only) ILSI America Phone 775-851-8880 ● Fax 775-851-8882 ●email: [email protected] ● www.ilsiamerica.com Specifications subject to change without notice Rev: 01/30/16_A Page 6 of 9 MEMS Oscillator, Low Power, LVCMOS/HCMOS Compatible, 1.000 MHz to 110.000 MHz IM801 Series Selectable Drive Strength Options Rise/Fall Time (20% to 80%) vs CLOAD Tables Rise/Fall Time Typ (nSec) Drive Strength (CLOAD) L A R B T E U - = default Rise/Fall Time Typ (nSec) 5 pF 15 pF 30 pF 45 pF 60 pF 6.16 3.19 2.11 1.65 0.93 0.78 0.70 0.65 11.61 6.35 4.31 3.23 1.91 1.66 1.48 1.30 22.00 11.00 7.65 5.79 3.32 2.94 2.64 2.40 31.27 16.01 10.77 8.18 4.66 4.09 3.68 3.35 39.91 21.52 14.47 11.08 6.48 5.74 5.09 4.56 Table 2: Vdd = +1.8 V Rise / Fall time for Specific CLOAD Drive Strength (CLOAD) L A R B T - = default U F 15 pF 30 pF 45 pF 60 pF 4.13 2.11 1.45 1.09 0.62 0.54 0.43 0.34 8.25 4.27 2.81 2.20 1.28 1.00 0.96 0.88 12.82 7.64 5.16 3.88 2.27 2.01 1.81 1.64 21.45 11.20 7.65 5.86 3.51 3.10 2.79 2.54 27.79 14.49 9.88 7.57 4.45 4.01 3.65 3.32 Table 3: Vdd = +2.5 V Rise/Fall time for Specific CLOAD Rise/Fall Time Typ (nSec) Drive Strength (CLOAD) L A R B T - = default U F 5 pF Rise/Fall Time Typ (nSec) 5 pF 15 pF 30 pF 45 pF 60 pF 3.77 1.94 1.29 0.97 0.55 0.44 0.34 0.29 7.54 3.90 2.57 2.00 1.12 1.00 0.88 0.81 12.28 7.03 4.72 3.54 2.08 1.83 1.64 1.48 19.57 10.24 7.01 5.43 3.22 2.82 2.52 2.29 25.27 13.34 9.06 6.93 4.08 3.67 3.30 2.99 Table 4: Vdd = +2.8 V Rise/Fall time for Specific CLOAD Drive Strength (CLOAD) L A R B - = default E U F 5 pF 15 pF 30 pF 45 pF 60 pF 3.60 1.84 1.22 0.89 0.51 0.38 0.30 0.27 7.21 3.71 2.46 1.92 1.00 0.92 0.83 0.76 11.97 6.72 4.54 3.39 1.97 1.72 1.55 1.39 18.74 9.86 6.76 5.20 3.07 2.71 2.40 2.16 24.30 12.68 8.62 6.64 3.90 3.51 3.13 2.85 Table 5: Vdd = +3.0 V Rise/Fall time for Specific CLOAD Rise/Fall Time Typ (nSec) Drive Strength (CLOAD) L A R B - = default) E U F 5 pF 15 pF 30 pF 45 pF 60 pF 3.39 1.74 1.16 0.81 0.46 0.33 0.28 0.29 6.88 3.50 2.33 1.82 1.00 0.87 0.79 0.81 11.63 6.38 4.29 3.22 1.86 1.64 1.46 1.31 17.56 8.98 6.04 4.52 2.60 2.30 2.05 1.83 23.59 12.19 8.34 6.33 3.84 3.35 2.93 2.61 Table 6: Vdd = +3.3 V Rise/Fall time for Specific CLOAD ILSI America Phone 775-851-8880 ● Fax 775-851-8882 ●email: [email protected] ● www.ilsiamerica.com Specifications subject to change without notice Rev: 01/30/16_A Page 7 of 9 MEMS Oscillator, Low Power, LVCMOS/HCMOS Compatible, 1.000 MHz to 110.000 MHz IM801 Series Mechanical Detail Package Dimensions and Suggest Land Pattern Option E: 2.00 x 1.60 x 0.80 Package Suggested Land Pattern 2.00 ±0.05 1.23 3 Marking 1.60 ±0.05 0.93 1.50 4 Bottom View 1 2 0.80 max 0.48 1.20 0.8 0.68 0.9 Suggested Land Pattern Option D: 2.50 x 2.00 x 0.80 Package 1.00 2.50 ±0.05 1.90 3 Marking 2.00 ±0.05 1.10 4 Bottom View 2 0.80 max 1 0.5 1.50 1.0 0.75 1.1 Suggested Land Pattern Option C: 3.20 x 2.50 x 0.80 Package 3.20 ±0.05 2.1 2.20 3 Marking 2.50±0.05 0.90 4 Bottom View 1 2 0.80 max 0.7 1.90 1.2 0.9 1.4 Suggested Land Pattern Option B: 5.00 x 3.20 X 0.80 Package 5.00 ±0.05 2.39 3 Marking 3.20 ±0.05 0.80 4 Bottom View 2 0.80 max 2.54 1 1.1 2.20 1.6 1.15 1.5 Marking Line 1 = XXXXX (Lot Code) Dot to denote Pin 1 location Package Information Leadframe: C194 Plating: NiPdAu ILSI America Phone 775-851-8880 ● Fax 775-851-8882 ●email: [email protected] ● www.ilsiamerica.com Specifications subject to change without notice Rev: 01/30/16_A Page 8 of 9 MEMS Oscillator, Low Power, LVCMOS/HCMOS Compatible, 1.000 MHz to 110.000 MHz IM801 Series Tape and Reel Dimensions PITCH Q1 Q2 REEL DIA TAPE WIDTH Q3 Q4 DIRECTION OF FEED REF: EIA-481-E Part Number Size Pitch Tape Width Pin Orient. IM801B 5.0 x 3.2 8.0 ± 0.1 12.3 max Q1 IM801C IM801D IM801E 3.2 x 2.5 2.5 x 2.0 2.0 x 1.6 4.0 ± 0.1 4.0 ± 0.1 4.0 ± 0.1 8.3 max 8.3 max 8.3 max Q1 Q1 Q1 Reel Dia. 180 330 180 180 180 Cou nt 1000 3000 3000 3000 3000 Notes: All dimensions are in mm. Do not scale drawings. PROPRIETARY AND CONFIDENTIAL THIS DOCUMENT CONTAINS PROPRIETARY INFORMATION, AND SUCH INFORMATION MAY NOT BE DISCLOSED TO OTHERS FOR ANY PURPOSE NOR USED FOR MANUFACTURING PURPOSES WITHOUT WRITTEN PERMISSION FROM ILSI America. ILSI America Phone 775-851-8880 ● Fax 775-851-8882 ●email: [email protected] ● www.ilsiamerica.com Specifications subject to change without notice Rev: 01/30/16_A Page 9 of 9