VISHAY SI7403BDN

Si7403BDN
New Product
Vishay Siliconix
P-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
−20
FEATURES
rDS(on) (W)
ID (A)
0.074 @ VGS = −4.5 V
−8c
0.110 @ VGS = −2.5 V
−7.4
Qg (Typ)
5 6 nC
5.6
D TrenchFETr Power MOSFET: 2.5-V Rated
D RoHS Compliant
D New PowerPAKr Package
− Low Thermal Resistance
− Low 1.07-mm Profile
Product Is
Completely
Pb-free
APPLICATIONS
D Load Switching
D PA Switching
PowerPAK 1212-8
S
S
3.30 mm
1
2
3.30 mm
S
3
S
4
G
G
D
8
7
D
6
D
5
D
D
Bottom View
P-Channel MOSFET
Ordering Information: Si7403BDN-T1—E3
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Symbol
Limit
Drain-Source Voltage
Parameter
VDS
−20
Gate-Source Voltage
VGS
"8
Continuous Drain Current (TJ = 150_C)a, b
TC = 25_C
−8c
TC = 70_C
−7.2
TA = 25_C
ID
Pulsed Drain Current
Continuous Source-Drain
Source Drain Diode Currenta, b
IDM
TC = 25_C
TA = 25_C
IS
Maximum Power Dissipationa, b
TA = 25_C
PD
Soldering Recommendations (Peak Temperature)c, d
−8
−2.6a, b
6.1
3.1a, b
W
2a, b
TA = 70_C
Operating Junction and Storage Temperature Range
A
−20
9.6
TC = 25_C
TC = 70_C
V
−5.1a, b,
−4.1a, b
TA = 70_C
Unit
TJ, Tstg
−55 to 150
260
_C
Notes:
a. Surface Mounted on 1” x 1” FR4 Board.
b. t = 5 sec
c. Package limited.
d. See Solder Profile (http://www.vishay.com/doc?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed copper (not
plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure
adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 73333
S-50519—Rev. A, 21-Mar-05
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Si7403BDN
New Product
Vishay Siliconix
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
t p 10 sec
RthJA
32
40
Steady State
RthJC
11
13
Maximum Junction-to-Ambienta, b
Maximum Junction-to-Case (Drain)
Unit
_C/W
Notes:
a. Surface Mounted on 1” x 1” FR4 Board.
b. Maximum under steady state conditions is 81 _C/W.
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
VDS
VGS = 0 V, ID = −250 mA
−20
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
DVDS/TJ
VGS(th) Temperature Coefficient
DVGS(th)/TJ
Gate Source Threshold Voltage
Gate-Source
VGS(th)
Gate-Source Leakage
IGSS
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
Forward Transconductancea
rDS(on)
gfs
ID = −250 mA
VDS = VGS, ID = −250 mA
V
14
mV/_C
−2
−0.45
VDS = VGS, ID = −5 mA
−1.0
−0.77
VDS = 0 V, VGS = −8 V
−100
VDS = −20 V, VGS = 0 V
−1
VDS = −20 V, VGS = 0 V, TJ = 55_C
−10
VDS v 5 V, VGS = −4.5 V
−20
V
ns
mA
A
VGS = −4.5 V, ID = −5.1 A
0.059
0.074
VGS = −2.5 V, ID = −4.2 A
0.080
0.110
VDS = −10 V, ID = −5.1 A
10
W
S
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
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2
Rg
430
VDS = −10 V, VGS = 0 V, f = 1 MHz
85
VDS = −10 V, VGS = −8 V, ID = −5.1 A
9.7
15
5.6
8.5
55
VDS = −10 V, VGS = −4.5 V, ID= −5.1 A
td(off)
0.95
f = 1 MHz
VDD = −10
10 V, RL = 2.4 W
ID ^ −4.1 A, VGEN = −4.5 V, Rg = 1 W
10
W
5
10
51
75
33
50
tf
60
90
td(on)
4
8
40
60
30
45
40
60
tr
td(off)
tf
nC
1.4
td(on)
tr
pF
VDD = −10
10 V, RL = 2.4 W
ID ^ −4.1 A, VGEN = −8 V, Rg = 1 W
ns
Document Number: 73333
S-50519—Rev. A, 21-Mar-05
Si7403BDN
New Product
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulse Diode Forward Current
ISM
Body Diode Voltage
VSD
TC = 25_C
−8
−20
IS = −2.6 A, VGS = 0 V
−0.7
−1.2
A
V
Body Diode Reverse Recovery Time
trr
20
40
ns
Body Diode Reverse Recovery Charge
Qrr
8
16
nC
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
IF = −4.1
41A
A, di/dt = 100 A/ms
A/ms, TJ = 25_C
12
8
ns
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Document Number: 73333
S-50519—Rev. A, 21-Mar-05
www.vishay.com
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Si7403BDN
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
10
VGS = 5 thru 3 V
TC = −55_C
16
2.5 V
I D − Drain Current (A)
I D − Drain Current (A)
20
12
2V
8
1.5 V
4
8
125_C
6
4
25_C
2
1V
0
0.0
0.5
1.0
1.5
2.0
2.5
0
0.0
3.0
0.5
VDS − Drain-to-Source Voltage (V)
800
0.16
700
0.14
600
C − Capacitance (pF)
rDS(on) − On-Resistance (mW)
On-Resistance vs. Drain Current and Gate Voltage
0.12
VGS = 2.5 V
0.08
VGS = 4.5 V
100
0.02
0
12
16
Ciss
300
0.04
8
20
Coss
Crss
0
4
ID − Drain Current (A)
16
20
On-Resistance vs. Junction Temperature
VGS = 2.5 V
1.4
6
5
VDS = 10 V
4
VDS = 14 V
3
2
VGS = 4.5 V
1.2
1.0
0.8
1
0
0
2
4
6
Qg − Total Gate Charge (nC)
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4
12
ID = 5.1 A
rDS(on) − On-Resiistance
(Normalized)
V GS − Gate-to-Source Voltage (V)
1.6
ID = 5.1 A
7
8
VDS − Drain-to-Source Voltage (V)
Gate Charge
8
2.5
400
200
4
2.0
Capacitance
500
0.06
0
1.5
VGS − Gate-to-Source Voltage (V)
0.18
0.10
1.0
8
10
0.6
−50
−25
0
25
50
75
100
125
150
TJ − Junction Temperature (_C)
Document Number: 73333
S-50519—Rev. A, 21-Mar-05
Si7403BDN
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
rDS(on) − Drain-to-Source On-Resistance (mW)
20
I S − Source Current (A)
TJ = 150_C
10
TJ = 25_C
ID = 5.1 A
0.25
0.20
0.15
TA = 125_C
0.10
TA = 25_C
0.05
0.00
1
0.0
0.30
0.2
0.4
0.6
0.8
1.0
1.2
0
1.4
1
VSD − Source-to-Drain Voltage (V)
Threshold Voltage
4
5
Single Pulse Power, Junction-to-Ambient
30
25
0.7
ID = 250 mA
Power (W)
VGS(th) (V)
3
VGS − Gate-to-Source Voltage (V)
0.8
0.6
0.5
0.4
0.3
−50
2
20
15
5
−25
0
25
50
75
100
125
0
0.001
150
0.01
0.1
TJ − Temperature (_C)
1
10
100
1000
Time (sec)
100
Safe Operating Area, Junction-to-Ambient
*Limited by rDS(on)
I D − Drain Current (A)
10
100 us
1 ms
1
0.1
10 ms
100 ms
1s
10 s
dc
TA = 25_C
Single Pulse
0.01
0.1
1
10
100
VDS − Drain-to-Source Voltage (V)
*VGS u minimum VGS at which rDS(on) is specified
Document Number: 73333
S-50519—Rev. A, 21-Mar-05
www.vishay.com
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Si7403BDN
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Current De-Rating*
12
10
8
8
Power Dissipation (W)
ID − Drain Current (A)
Power De-Rating
10
Package Limited
6
4
6
4
2
2
0
0
0
25
50
75
100
TC − Case Temperature (_C)
125
150
25
50
75
100
125
150
TC − Case Temperature (_C)
*The power dissipation PD is based on TJ(max) = 175_C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for
cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit.
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Document Number: 73333
S-50519—Rev. A, 21-Mar-05
Si7403BDN
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
PDM
0.05
t1
0.02
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 65_C/W
3. TJM − TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10−4
10−3
10−1
1
Square Wave Pulse Duration (sec)
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Case
2
Normalized Effective Transient
Thermal Impedance
10−2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10−4
10−3
10−2
Square Wave Pulse Duration (sec)
10−1
1
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and
Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see
http://www.vishay.com/ppg?73333.
Document Number: 73333
S-50519—Rev. A, 21-Mar-05
www.vishay.com
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Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
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