Si7384DP Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.0085 at VGS = 10 V 18 0.0125 at VGS = 4.5 V 14 S RoHS COMPLIANT • High-Side DC/DC Conversion - Notebook - Desktop - Server 5.15 mm 1 Halogen-free available TrenchFET® Gen II Power MOSFET PWM Optimized for High Efficiency New Low Thermal Resistance PowerPAK® Package with Low 1.07 mm Profile • 100 % Rg Tested APPLICATIONS PowerPAK SO-8 6.15 mm • • • • S 2 S 3 G D 4 D 8 D 7 D 6 D G 5 Bottom View S Ordering Information: Si7384DP-T1-E3 (Lead (Pb)-free) Si7384DP-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Symbol VDS VGS TA = 25 °C TA = 70 °C Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Current a Continuous Source Current (Diode Conduction) Avalanche Current Single Pulse Avalanche Energy L = 0.1 mH TA = 25 °C TA = 70 °C Maximum Power Dissipationa IDM IS IAS EAS PD TJ, Tstg Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) ID b, c 10 s 18 14 4.1 5 3.2 Steady State 30 ± 20 11 8 ± 50 1.5 25 32 1.8 1.1 - 55 to 150 260 Unit V A mJ W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient (MOSFET) Maximum Junction-to-Case (Drain) Symbol a t ≤ 10 s Steady State Steady State RthJA RthJC Typical 21 56 2.4 Maximum 25 70 3.0 Unit °C/W Notes: a. Surface Mounted on 1” x 1” FR4 board. b. See Solder Profile ( http://www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. Document Number: 72656 S-80439-Rev. C, 03-Mar-08 www.vishay.com 1 Si7384DP Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. 1.0 Typ. Max. Unit Static VGS(th) VDS = VGS, ID = 250 µA Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Gate Threshold Voltage Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltage a V nA VDS = 30 V, VGS = 0 V 1 VDS = 30 V, VGS = 0 V, TJ = 70 °C 15 VDS ≥ 5 V, VGS = 10 V RDS(on) 3.0 ± 100 µA 40 A VGS = 10 V, ID = 18 A 0.007 0.0085 VGS = 4.5 V, ID = 14 A 0.0105 0.0125 gfs VDS = 15 V, ID = 18 A 56 VSD IS = 4.1 A, VGS = 0 V 0.78 1.1 12 18 Ω S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg VDS = 15 V, VGS = 4.5 V, ID = 18 A 0.8 1.7 td(on) Turn-On Delay Time VDD = 15 V, RL = 15 Ω ID ≅ 1 A, VGEN = 10 V, RG = 6 Ω tr Rise Time td(off) Turn-Off Delay Time Fall Time tf Source-Drain Reverse Recovery Time trr nC 5.9 4.0 IF = 2.8 A, di/dt = 100 A/µs Ω 2.5 10 15 13 20 45 70 13 20 25 50 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 50 50 VGS = 10 thru 5 V 40 4V I D - Drain Current (A) I D - Drain Current (A) 40 30 20 10 30 20 TC = 125 °C 10 25 °C - 55 °C 0 0 1 2 3 4 VDS - Drain-to-Source Voltage (V) Output Characteristics www.vishay.com 2 5 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 VGS - Gate-to-Source Voltage (V) Transfer Characteristics Document Number: 72656 S-80439-Rev. C, 03-Mar-08 Si7384DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.020 2200 0.016 1760 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) Ciss 0.012 VGS = 4.5 V VGS = 10 V 0.008 1320 880 0.004 440 0.000 0 Coss Crss 0 10 20 30 40 0 50 4 8 20 Capacitance 1.8 6 VDS = 15 V ID = 18 A VGS = 10 V ID = 18 A 1.6 4 3 2 1.4 (Normalized) 5 R DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 16 VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) On-Resistance vs. Drain Current 1.2 1.0 0.8 1 0.6 - 50 0 0 3 6 9 12 15 0 25 50 75 100 125 TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature 150 0.030 R DS(on) - On-Resistance (Ω) TJ = 150 °C 10 TJ = 25 °C 1 0.00 - 25 Qg - Total Gate Charge (nC) 60 I S - Source Current (A) 12 0.024 0.018 ID = 18 A 0.012 0.006 0.000 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage Document Number: 72656 S-80439-Rev. C, 03-Mar-08 10 www.vishay.com 3 Si7384DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.4 50 ID = 250 µA 0.2 0.0 Power (W) VGS(th) Variance (V) 40 - 0.2 - 0.4 30 20 - 0.6 10 - 0.8 - 1.0 - 50 0 - 25 0 25 50 75 100 125 150 0.01 1 0.1 TJ - Temperature (°C) 10 100 600 Time (s) Threshold Voltage Single Pulse Power 100 IDM Limited Limited by R DS(on)* I D - Drain Current (A) 10 ID(on) Limited 10 ms 1 100 ms 1s 10 s 0.1 TC = 25 °C Single Pulse DC BVDSS Limited 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum V GS at which R DS(on) is specified Safe Operating Area 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = R thJA = 67 °C/W 3. T JM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10- 4 10- 3 10- 2 10- 1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient www.vishay.com 4 Document Number: 72656 S-80439-Rev. C, 03-Mar-08 Si7384DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 4 10- 3 10- 2 Square Wave Pulse Duration (s) 10- 1 1 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?72656. Document Number: 72656 S-80439-Rev. 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Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1