Si7902EDN Preliminary Information Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET, Common Drain FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.028 @ VGS = 4.5 V 8.3 0.030 @ VGS = 3.7 V 8.0 0.043 @ VGS = 2.5 V 6.7 D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKt Package with Low 1.07-mm Profile D 3000-V ESD Protection APPLICATIONS D Protection Switch for 1-2 Li-ion/LiP Batteries D D PowerPAKt 1212-8 S1 3.30 mm 3.30 mm 1 G1 2 1.8 kW S2 3 G2 4 1.8 kW G1 G2 D 8 D 7 D 6 D 5 S1 S2 N-Channel Bottom View N-Channel ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 10 secs Steady State Drain-Source Voltage VDS 30 Gate-Source Voltage VGS "12 Continuous Drain Current (TJ = 150_C) _ a TA = 25_C TA = 85_C Pulsed Drain Current ID Continuous Source Current (Diode Conduction)a IS TA = 25_C Maximum Power Dissipationa TA = 85_C Operating Junction and Storage Temperature Range PD V 8.3 5.6 6.0 4.0 IDM A 40 2.7 1.3 3.2 1.5 1.7 0.79 TJ, Tstg Unit W _C –55 to 150 THERMAL RESISTANCE RATINGS Parameter Symbol t v 10 sec Maximum Junction-to-Ambienta Maximum Junction-to-Case (Drain) Steady State Steady State RthJA RthJC Typical Maximum 30 38 65 82 1.9 2.4 Unit _C/W C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. This data sheet contains preliminary specifications that are subject to change. Document Number: 71801 S-05696—Rev. A, 18-Feb-02 www.vishay.com 1 Si7902EDN Preliminary Information Vishay Siliconix MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min VGS(th) VDS = VGS, ID = 250 mA 0.60 Typ Max Unit Static Gate Threshold Voltage Gate-Body Leakage IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea VDS = 0 V, VGS = "4.5 V "1 mA VDS = 0 V, VGS = "12 V "10 mA VDS = 24 V, VGS = 0 V 1 VDS = 24 V, VGS = 0 V, TJ = 85_C 20 VDS w 5 V, VGS = 4.5 V rDS(on) V 30 m mA A VGS = 4.5 V, ID = 8.3 A 0.023 0.028 VGS = 3.7 V, ID = 8.0 A 0.025 0.030 VGS = 2.5 V, ID = 3.0 A 0.035 0.043 gfs VDS = 15 V, ID = 8.3 A 26 VSD IS = 2.7 A, VGS = 0 V 0.75 1.2 10 15 VDS = 15 V, VGS = 4.5 V, ID = 8.3 A 2.3 W S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs nC Gate-Drain Charge Qgd 2.4 Turn-On Delay Time td(on) 0.9 1.5 1.5 2.5 2.5 4.0 2.5 4.0 Rise Time tr Turn-Off Delay Time VDD = 15 V, RL = 15 W ID ^ 1 A, VGEN = 4.5 V, RG = 6 W td(off) Fall Time tf m ms Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Gate-Current vs. Gate-Source Voltage Gate Current vs. Gate-Source Voltage 0.8 1000 I GSS – Gate Current (mA) I GSS – Gate Current (mA) 100 0.6 0.4 0.2 10 TJ = 150_C 1 TJ = 25_C 0.1 0.01 0.0 0.001 0 3 6 9 12 VGS – Gate-to-Source Voltage (V) www.vishay.com 2 15 0 3 6 9 12 15 VGS – Gate-to-Source Voltage (V) Document Number: 71801 S-05696—Rev. A, 18-Feb-02 Si7902EDN Preliminary Information Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 30 30 VGS = 5 thru 2 V 24 I D – Drain Current (A) I D – Drain Current (A) 24 2.5 V 18 12 2V 6 18 12 TC = 125_C 6 25_C –55_C 1.5 V 0 0 1 2 3 4 0 0.0 5 0.5 VDS – Drain-to-Source Voltage (V) 1.0 2.0 2.5 3.0 VGS – Gate-to-Source Voltage (V) On-Resistance vs. Drain Current Gate Charge 5 V GS – Gate-to-Source Voltage (V) 0.08 r DS(on) – On-Resistance ( W ) 1.5 0.06 0.04 VGS = 2.5 V VGS = 3.7 V 0.02 VGS = 4.5 V 0.00 VDS = 15 V ID = 8.3 A 4 3 2 1 0 0 6 12 18 24 30 0 2 4 6 8 10 Qg – Total Gate Charge (nC) ID – Drain Current (A) On-Resistance vs. Junction Temperature r DS(on) – On-Resistance (W) (Normalized) 1.8 1.6 VGS = 4.5 V ID = 8.3 A 1.4 1.2 1.0 0.8 0.6 –50 –25 0 25 50 75 100 125 150 TJ – Junction Temperature (_C) Document Number: 71801 S-05696—Rev. A, 18-Feb-02 www.vishay.com 3 Si7902EDN Preliminary Information Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.08 30 10 r DS(on) – On-Resistance ( W ) I S – Source Current (A) ID = 3 A TJ = 150_C TJ = 25_C 0.06 ID = 8.3 A 0.04 0.02 0.00 1 0 0.2 0.4 0.6 0.8 1.0 0 1.2 1 VSD – Source-to-Drain Voltage (V) 2 3 4 5 VGS – Gate-to-Source Voltage (V) Threshold Voltage Single Pulse Power, Juncion-To-Ambient 0.4 50 ID = 250 mA 40 Power (W) V GS(th) Variance (V) 0.2 –0.0 30 –0.2 20 –0.4 10 –0.6 –50 0 –25 0 25 50 75 100 125 150 0.01 0.1 1 TJ – Temperature (_C) 10 100 600 Time (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 65_C/W 3. TJM – TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10–4 www.vishay.com 4 10–3 10–2 10–1 1 Square Wave Pulse Duration (sec) 10 100 600 Document Number: 71801 S-05696—Rev. A, 18-Feb-02 Si7902EDN Preliminary Information Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Case 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 Single Pulse 0.05 0.02 0.01 10–4 Document Number: 71801 S-05696—Rev. A, 18-Feb-02 10–3 10–2 Square Wave Pulse Duration (sec) 10–1 1 www.vishay.com 5