Si3853DV Vishay Siliconix P-Channel 20-V (D-S) MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.200 at VGS = - 4.5 V ± 1.8 0.340 at VGS = - 2.5 V ± 1.3 • Halogen-free According to IEC 61249-2-21 Definition • LITTLE FOOT® Plus • Compliant to RoHS Directive 2002/95/EC SCHOTTKY PRODUCT SUMMARY VKA (V) VF (V) Diode Forward Voltage IF (A) 20 0.48 V at 0.5 A 0.5 TSOP-6 Top View 3 mm A 1 6 K S 2 5 N/C G 3 4 D S K D A G 2.85 mm Ordering Information: Si3853DV-T1-E3 (Lead (Pb)-free) Si3853DV-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 5s Steady State VDS - 20 Reverse Voltage (Schottky) VKA 20 Gate-Source Voltage (MOSFET) VGS Drain-Source Voltage (MOSFET and Schottky) Continuous Drain Current (TJ = 150 °C) (MOSFET)a TA = 25 °C TA = 70 °C Continuous Source Current (MOSFET Diode Conduction)a ± 12 ± 1.6 ± 1.5 TA = 25 °C TA = 70 °C TA = 25 °C PD TA = 70 °C TJ, Tstg ± 1.2 ±7 - 1.05 - 0.75 A 0.5 IFM Pulsed Foward Current (Schottky) Operating Junction and Storage Temperature Range ± 12 IF Average Forward Current (Schottky) Maximum Power Dissipation (Schottky)a IS V ± 1.8 IDM Pulsed Drain Current (MOSFET) Maximum Power Dissipation (MOSFET)a ID Unit 7 1.15 0.83 0.73 0.53 1.0 0.76 0.64 0.48 - 55 to 150 W °C Notes: a. Surface mounted on 1" x 1" FR4 board. Document Number: 70979 S09-2276-Rev. B, 02-Nov-09 www.vishay.com 1 Si3853DV Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter Device t≤5s Junction-to-Ambienta Steady State Junction-to-Foot Steady State Symbol Typical Maximum MOSFET 93 110 Schottky 103 125 130 150 140 165 MOSFET RthJA Schottky MOSFET MOSFET RthJF 75 90 80 95 Unit °C/W Notes: a. Surface mounted on 1" x 1" FR4 board. MOSFET SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. VGS(th) VDS = VGS, ID = - 250 µA - 0.5 IGSS VDS = 0 V, VGS = ± 12 V ± 100 VDS = - 16 V, VGS = 0 V -1 VDS = - 16 V, VGS = 0 V, TJ = 75 °C - 10 Unit Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea VDS ≥ - 5 V, VGS = - 4.5 V V -5 µA A VGS = - 4.5 V, ID = - 1.8 A 0.160 0.200 VGS = - 2.5 V, ID = - 1.0 A 0.280 0.340 gfs VDS = - 5 V, ID = - 1.8 A 3.6 VSD IS = - 1.05 V, VGS = 0 V - 0.83 - 1.10 2.7 4.0 VDS = - 10 V, VGS = - 4.5 V, ID = - 1.8 A 0.4 RDS(on) nA Ω S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd 0.6 Turn-On Delay Time td(on) 11 Rise Time Turn-Off DelayTime tr td(off) Fall Time tf Body Diode Reverse Recovery Time trr VDD = - 10 V, RL = 10 Ω ID ≅ - 1 A, VGEN = - 4.5 V, Rg = 6 Ω IF = - 1.05 A, dI/dt = 100 A/µs nC 17 34 50 19 30 24 36 20 40 Typ. Max. ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. SCHOTTKY SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Forward Voltage Drop Maximum Reverse Leakage Current Junction Capacitance Symbol VF Irm CT Test Conditions Min. IF = 0.5 A 0.42 0.48 IF = 0.5 A, TJ = 125 °C 0.33 0.4 VR = 20 V 0.002 0.100 VR = 20 V, TJ = 75 °C 0.06 1 VR = 20 V, TJ = 125 °C 1.5 10 VR = 10 V 31 Unit V mA pF Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 70979 S09-2276-Rev. B, 02-Nov-09 Si3853DV Vishay Siliconix MOSFET TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 10 8 VGS = 4.5 V thru 4 V 3.5 V TC = - 55 °C 8 I D - Drain Current (A) I D - Drain Current (A) 6 3V 6 4 2.5 V 2 2V 25 °C 125 °C 4 2 1.5 V 0 0 0 1 2 3 4 5 0 0.5 VDS - Drain-to-Source Voltage (V) 1.0 2.0 2.5 3.0 3.5 4.0 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 450 0.6 0.5 360 VGS = 2.5 V C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 1.5 0.4 0.3 VGS = 3.6 V 0.2 Ciss 270 180 Coss VGS = 4.5 V 90 0.1 Crss 0 0 0 1 2 3 4 5 6 0 7 4 8 16 20 VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) Capacitance On-Resistance vs. Drain Current 4.5 1.8 VDS = 10 V ID = 1.8 A 1.6 3.6 RDS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 12 2.7 1.8 VGS = 10 V ID = 1.8 A 1.4 1.2 1.0 0.8 0.9 0.6 0 0 0.6 1.2 1.8 Qg - Total Gate Charge (nC) Gate Charge Document Number: 70979 S09-2276-Rev. B, 02-Nov-09 2.4 3.0 0.4 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature www.vishay.com 3 Si3853DV Vishay Siliconix MOSFET TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 0.6 10 ID = 1.8 A RDS(on) - On-Resistance (Ω) I S - Source Current (A) 0.5 TJ = 150 °C 1 TJ = 25 °C ID = 1.2 A 0.4 0.3 0.2 0.1 0 0.1 0 0.3 0.6 0.9 1.2 0 1.5 2 3 4 5 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 8 0.6 0.4 ID = 250 µA 6 0.2 Power (W) VGS(th) Variance (V) 1 0.0 4 2 - 0.2 - 0.4 - 50 0 - 25 0 25 50 75 100 125 150 0.01 1 0.1 TJ - Temperature (°C) 10 30 Time (s) Single Pulse Power, Junction-to-Ambient Threshold Voltage 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 Notes: 0.2 PDM 0.1 0.1 t1 0.05 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 130 °C/W 0.02 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 100 600 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient www.vishay.com 4 Document Number: 70979 S09-2276-Rev. B, 02-Nov-09 Si3853DV Vishay Siliconix MOSFET TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot SCHOTTKY TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 5 1 I F - Forward Current (A) I R - Reverse Current (mA) 20 10 0.1 10 V 20 V 0.01 TJ = 150 °C 1 TJ = 25 °C 0.001 0.1 0.0001 0 25 50 75 100 125 0 150 0.2 0.4 0.6 0.8 1.0 VF - Forward Voltage Drop (V) TJ - Junction Temperature (°C) Forward Voltage Drop Reverse Current vs. Junction Temperature CT - Junction Capacitance (pF) 150 120 90 60 30 0 0 4 8 12 16 20 VKA - Reverse Voltage (V) Capacitance Document Number: 70979 S09-2276-Rev. B, 02-Nov-09 www.vishay.com 5 Si3853DV Vishay Siliconix SCHOTTKY TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 Notes: 0.2 PDM 0.1 0.1 t1 0.05 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 140 °C/W 0.02 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10-4 10-3 10-2 10-1 1 100 10 600 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?70979. www.vishay.com 6 Document Number: 70979 S09-2276-Rev. B, 02-Nov-09 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000