Si6969BDQ New Product Vishay Siliconix Dual P-Channel 1.8-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) -12 rDS(on) (W) ID (A) 0.030 @ VGS = -4.5 V -4.6 0.040 @ VGS = -2.5 V - 3.8 0.055 @ VGS = -1.8 V - 3.0 S1 S2 TSSOP-8 D1 1 S1 2 S1 3 G1 4 D Si6969BDQ G1 8 D2 7 S2 G2 6 S2 5 G2 Top View D1 D2 P-Channel MOSFET P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 10 secs Steady State Drain-Source Voltage VDS -12 Gate-Source Voltage VGS "8 Continuous Drain Current (TJ = 150_C) _ a TA = 25_C TA = 70_C Pulsed Drain Current (10 ms Pulse Width) IS TA = 25_C TA = 70_C Operating Junction and Storage Temperature Range PD V - 4.6 -4.0 -3.8 -3.2 IDM Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa ID A -30 -1.0 -0.7 1.14 0.83 0.73 0.53 TJ, Tstg Unit W _C -55 to 150 THERMAL RESISTANCE RATINGS Parameter Symbol t v 10 sec Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Steady State Steady State RthJA RthJF Typical Maximum 88 110 120 150 65 80 Unit _C/W C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 72017 S-22051—Rev. B, 18-Nov-02 www.vishay.com 1 Si6969BDQ New Product Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min VGS(th) VDS = VGS, ID = -250 mA -0.45 Typ Max Unit -0.8 V "100 nA Static Gate Threshold Voltage Gate-Body Leakage IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward VDS = 0 V, VGS = "8 V Diode Forward Voltagea -1 -25 VDS -8 V, VGS = -4.5 V rDS(on) Transconductancea VDS = -9.6 V, VGS = 0 V VDS = -9.6 V, VGS = 0 V, TJ = 70_C m mA -30 A VGS = -4.5 V, ID = -4.6 A 0.024 0.030 VGS = -2.5 V, ID = -3.8 A 0.031 0.040 VGS = -1.8 V, ID = -3.0 A 0.044 0.055 gfs VDS = -8 V, ID = -4.6 A 18 VSD IS = -1.25 A, VGS = 0 V -0.68 -1.1 16.5 25 W S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs VDS = -6 V, VGS = -4.5 V, ID = -4.6 A 2 nC Gate-Drain Charge Qgd 4.7 Turn-On Delay Time td(on) 20 40 tr 35 60 110 180 90 150 100 200 Rise Time Turn-Off Delay Time VDD = -6 V, RL = 6 W ID ^ -1.0 A, VGEN = -4.5 V, RG = 6 W td(off) Fall Time tf Source-Drain Reverse Recovery Time trr IF = -1.25 A, di/dt = 100 A/ms ns Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 30 30 TC = -55_C VGS = 5 thru 2.5 V 24 25_C 24 I D - Drain Current (A) I D - Drain Current (A) 2V 18 12 1.5 V 6 12 6 0 0 1 2 3 4 VDS - Drain-to-Source Voltage (V) www.vishay.com 2 125_C 18 5 0 0.0 0.5 1.0 1.5 2.0 2.5 VGS - Gate-to-Source Voltage (V) Document Number: 72017 S-22051—Rev. B, 18-Nov-02 Si6969BDQ New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Capacitance 2500 0.08 2000 0.06 C - Capacitance (pF) r DS(on) - On-Resistance ( W ) On-Resistance vs. Drain Current 0.10 VGS = 1.8 V VGS = 2.5 V 0.04 Ciss 1500 1000 Coss 0.02 500 VGS = 4.5 V Crss 0.00 0 0 6 12 18 24 30 0 2 ID - Drain Current (A) Gate Charge 8 10 12 On-Resistance vs. Junction Temperature 1.6 r DS(on) - On-Resistance (W) (Normalized) VDS = 6 V ID = 4.6 A V GS - Gate-to-Source Voltage (V) 6 VDS - Drain-to-Source Voltage (V) 5 4 3 2 1 VGS = 4.5 V ID = 4.6 A 1.4 1.2 1.0 0.8 0 0 4 8 12 16 0.6 -50 20 -25 Qg - Total Gate Charge (nC) Source-Drain Diode Forward Voltage 25 50 75 100 125 150 On-Resistance vs. Gate-to-Source Voltage 0.10 r DS(on) - On-Resistance ( W ) TJ = 150_C 10 TJ = 25_C 1 0.0 0 TJ - Junction Temperature (_C) 30 I S - Source Current (A) 4 0.08 ID = 4.6 A 0.06 0.04 0.02 0.00 0.3 0.6 0.9 1.2 VSD - Source-to-Drain Voltage (V) Document Number: 72017 S-22051—Rev. B, 18-Nov-02 1.5 0 1 2 3 4 5 6 7 8 VGS - Gate-to-Source Voltage (V) www.vishay.com 3 Si6969BDQ New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage Single Pulse Power, Junction-to-Ambient 0.4 200 160 ID = 250 mA 120 Power (W) V GS(th) Variance (V) 0.2 0.0 80 -0.2 40 -0.4 -50 -25 0 25 50 75 100 125 0 10- 3 150 10- 2 TJ - Temperature (_C) 10- 1 1 10 Time (sec) Safe Operating Area, Junction-to-Case 100 Limited by rDS(on) 1 ms I D - Drain Current (A) 10 10 ms 1 100 ms 1s 0.1 TC = 25_C Single Pulse 10 s dc 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 120_C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10- 4 www.vishay.com 4 10- 3 10- 2 10- 1 1 Square Wave Pulse Duration (sec) 10 100 600 Document Number: 72017 S-22051—Rev. B, 18-Nov-02 Si6969BDQ New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Foot 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 4 Document Number: 72017 S-22051—Rev. B, 18-Nov-02 10- 3 10- 2 10- 1 Square Wave Pulse Duration (sec) 1 10 www.vishay.com 5