Si3590DV Vishay Siliconix New Product N- and P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 30 P-Channel - 30 rDS(on) (Ω) ID (A) 0.077 at VGS = 4.5 V 3 0.120 at VGS = 2.5 V 2 0.170 at VGS = - 4.5 V -2 0.300 at VGS = - 2.5 V - 1.2 • TrenchFET® Power MOSFET • Ultra Low rDS(on) N- and P-Channel for High Efficiency • Optimized for High-Side/Low-Side • Minimized Conduction Losses Pb-free Available RoHS* COMPLIANT APPLICATIONS • Portable Devices Including PDAs, Cellular Phones and Pagers D1 TSOP-6 Top View 3 mm G1 1 6 D1 S2 2 5 S1 G2 3 4 D2 S2 G2 G1 2.85 mm Ordering Information: Si3590DV-T1 Si3590DV-T1-E3 (Lead (Pb)-free) S1 D2 N-Channel MOSFET P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol N-Channel 10 sec P-Channel Steady State 10 sec Steady State Drain-Source Voltage VDS 30 - 30 Gate-Source Voltage VGS ± 12 ± 12 TA = 25 °C Continuous Drain Current (TJ = 150 °C)a TA = 70 °C 3 2.3 IDM Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa ID IS TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range PD 2.5 -2 2.0 - 1.6 V - 1.7 - 1.3 8 -8 1.05 0.75 - 1.05 - 0.75 1.15 0.83 1.15 0.83 0.70 0.53 0.70 0.53 TJ, Tstg Unit - 55 to 150 A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Symbol t ≤ 10 sec Steady State Steady State RthJA RthJF N-Channel P-Channel Typ Max Typ Max 93 110 93 110 130 150 130 150 75 90 75 90 Unit °C/W Notes: a. Surface Mounted on 1" x 1" FR4 Board. * Pb containing terminations are not RoHS compliant, exemptions may apply. Document Number: 72032 S-60422-Rev. B, 20-Mar-06 www.vishay.com 1 Si3590DV Vishay Siliconix New Product SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min Typ Max Unit Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS VDS = VGS, ID = 250 µA N-Ch 0.6 1.5 VDS = VGS, ID = - 250 µA P-Ch - 0.6 - 1.5 VDS = 0 V, VGS = ± 12 V N-Ch ± 100 P-Ch ± 100 VDS = 30 V, VGS = 0 V N-Ch 1 VDS = - 30 V, VGS = 0 V P-Ch -1 VDS = 30 V, VGS = 0 V, TJ = 55 °C N-Ch 5 VDS = - 30 V, VGS = 0 V, TJ = 55 °C P-Ch VDS ≥ 5 V, VGS = 4.5 V N-Ch 5 VDS ≤ - 5 V, VGS = - 4.5 V P-Ch -5 VGS = 4.5 V, ID = 3 A N-Ch 0.062 0.077 VGS = - 4.5 V, ID = - 2 A P-Ch 0.135 0.170 VGS = 2.5 V, ID = 2 A N-Ch 0.095 0.120 VGS = - 2.5 V, ID = - 1.2 A P-Ch 0.235 0.300 VDS = 5 V, ID = 3 A N-Ch 10 VDS = - 5 V, ID = - 2 A P-Ch 5 IS = 1.05 A, VGS = 0 V N-Ch 0.80 1.10 IS = - 1.05 A, VGS = 0 V P-Ch - 0.83 - 1.10 N-Ch 3 4.5 P-Ch N-Ch 3.8 0.6 6 P-Ch 0.6 ID(on) rDS(on) gfs VSD V nA µA -5 A Ω S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Delay Time td(on) Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time tr td(off) tf N-Channel VDS = 15 V, VGS = 4.5 V, ID = 2 A P-Channel VDS = - 15 V, VGS = - 4.5 V, ID = - 2 A N-Channel VDD = 15 V, RL = 15 Ω ID ≅ 1 A, VGEN = 10 V, RG = 6 Ω N-Ch 1.0 P-Ch 1.5 N-Ch 5 P-Ch 5 8 N-Ch P-Ch 12 15 23 23 8 N-Ch 13 23 P-Ch 20 30 N-Ch 7 12 P-Ch 20 30 IF = 1.05 A, di/dt = 100 A/µs N-Ch 15 25 IF = - 1.05 A, di/dt = 100 A/µs P-Ch 18 30 P-Channel VDD = - 15 V, RL = 15 Ω ID ≅ - 1 A, VGEN = - 10 V, RG = 6 Ω trr nC ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 72032 S-60422-Rev. B, 20-Mar-06 Si3590DV Vishay Siliconix New Product N-CHANNEL TYPICAL CHARACTERISTICS 25 °C unless noted 8 8 7 VGS = 5 thru 2.5 V 6 I D - Drain Current (A) I D - Drain Current (A) 7 5 4 3 2V 2 6 5 4 3 TC = 125 °C 2 1 25 °C 1 - 55 °C 1.5 V 0 0 1 2 3 4 0 0.0 5 0.5 VDS - Drain-to-Source Voltage (V) 1.0 2.5 3.0 Transfer Characteristics 0.5 450 0.4 360 C - Capacitance (pF) r DS(on) - On-Resistance (Ω) 2.0 VGS - Gate-to-Source Voltage (V) Output Characteristics 0.3 0.2 Ciss 270 180 VGS = 2.5 V 0.1 90 Coss VGS = 4.5 V 0.0 Crss 0 0 2 4 6 8 10 0 6 12 18 24 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 6 30 1.8 VDS = 15 V ID = 2 A 5 VGS = 4.5 V ID = 3 A 1.6 r DS(on) - On-Resistance (Normalized) V GS - Gate-to-Source Voltage (V) 1.5 4 3 2 1 1.4 1.2 1.0 0.8 0 0 1 2 3 Qg - Total Gate Charge (nC) Gate Charge Document Number: 72032 S-60422-Rev. B, 20-Mar-06 4 5 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature www.vishay.com 3 Si3590DV Vishay Siliconix New Product N-CHANNEL TYPICAL CHARACTERISTICS 25 °C unless noted 0.25 10 r DS(on)- On-Resistance (Ω) I S - Source Current (A) 0.20 TJ = 150 °C 1 TJ = 25 °C 0.1 ID = 3 A 0.15 0.10 0.05 0.00 0.00 0.3 0.6 0.9 1.2 0 1.5 1 VSD - Source-to-Drain Voltage (V) 2 3 4 5 VGS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage Source-Drain Diode Forward Voltage 0.4 8 ID = 250 µA 6 Power (W) V GS(th) Variance (V) 0.2 0.0 - 0.2 4 2 - 0.4 - 0.6 - 50 0 - 25 0 25 50 75 100 125 150 0.1 0.01 TJ - Temperature (°C) 1 10 30 Time (sec) Threshold Voltage Single Pulse Power, Junction-to-Ambient 100 IDM Limited I D - Drain Current (A) 10 rDS(on) Limited 100 µs 1 1 ms ID(on) Limited 0.1 10 ms 10 s, 1 s dc BVDSS Limited 0.01 0.1 100 ms TC = 25 °C Single Pulse 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which rDS(on) is specified Safe Operating Area, Junction-to-Case www.vishay.com 4 Document Number: 72032 S-60422-Rev. B, 20-Mar-06 Si3590DV Vishay Siliconix New Product N-CHANNEL TYPICAL CHARACTERISTICS 25 °C unless noted 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.1 0.2 Notes: 0.1 PDM t1 0.05 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 87 °C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10-4 10-3 10-2 10-1 1 100 10 600 Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (sec) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Document Number: 72032 S-60422-Rev. B, 20-Mar-06 www.vishay.com 5 Si3590DV Vishay Siliconix New Product P-CHANNEL TYPICAL CHARACTERISTICS 25 °C unless noted 8 8 VGS = 5 thru 3.5 V TC = - 55 °C 7 7 25 °C I D - Drain Current (A) I D - Drain Current (A) 3V 6 5 4 2.5 V 3 6 5 125 °C 4 3 2 2 2V 1 1 1.5 V 0 0.0 0 0 1 2 3 4 5 0.5 1.0 2.0 2.5 3.0 3.5 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.75 500 0.60 400 C - Capacitance (pF) r DS(on) - On-Resistance (Ω) 1.5 0.45 VGS = 2.5 V 0.30 VGS = 4.5 V Ciss 300 200 0.15 100 0.00 0 Coss Crss 0 1 2 3 4 5 6 7 0 8 12 18 24 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 30 1.8 6 VDS = 15 V ID = 2 A 5 VGS = 4.5 V ID = 2 A 1.6 r DS(on) - On-Resistance (Normalized) V GS - Gate-to-Source Voltage (V) 6 4 3 2 1.4 1.2 1.0 0.8 1 0 0 1 2 3 Qg - Total Gate Charge (nC) Gate Charge www.vishay.com 6 4 5 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature Document Number: 72032 S-60422-Rev. B, 20-Mar-06 Si3590DV Vishay Siliconix New Product P-CHANNEL TYPICAL CHARACTERISTICS 25 °C unless noted 0.5 10 r DS(on) - On-Resistance (Ω) I S - Source Current (A) 0.4 TJ = 150 °C 1 TJ = 25 °C 0.3 ID = 2 A 0.2 0.1 0.0 0.1 0.00 0.3 0.6 0.9 1.2 0 1.5 1 2 3 4 5 6 7 VGS - Gate-to-Source Voltage (V) VSD - Source-to-Drain Voltage (V) On-Resistance vs. Gate-to-Source Voltage Source-Drain Diode Forward Voltage 0.4 8 ID = 250 µA 0.3 Power (W) V GS(th) Variance (V) 6 0.2 0.1 4 0.0 2 - 0.1 - 0.2 - 50 0 - 25 0 25 50 75 100 125 150 0.1 0.01 TJ - Temperature (°C) 1 10 30 Time (sec) Single Pulse Power, Junction-to-Ambient Threshold Voltage 100 IDM Limited I D - Drain Current (A) 10 rDS(on) Limited 100 µs 1 1 ms ID(on) Limited 0.1 10 ms TC = 25 °C Single Pulse 100 ms 10 s, 1 s dc 0.01 0.1 BVDSS Limited 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which rDS(on) is specified Safe Operating Area, Junction-to-Case Document Number: 72032 S-60422-Rev. B, 20-Mar-06 www.vishay.com 7 Si3590DV Vishay Siliconix New Product P-CHANNEL TYPICAL CHARACTERISTICS 25 °C unless noted 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.1 0.2 Notes: 0.1 PDM t1 0.05 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 87 °C/W 0.02 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10-4 10-3 10-2 10-1 1 100 10 600 Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (sec) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?72032. www.vishay.com 8 Document Number: 72032 S-60422-Rev. B, 20-Mar-06 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1