DTM4459 www.din-tek.jp P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () ID (A)d 0.005 at VGS = - 10 V - 29 0.00775 at VGS = - 4.5 V - 23 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC Qg (Typ.) 61 nC APPLICATIONS • Adaptor Switch • Notebook SO-8 S S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Symbol VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Limit - 30 ± 20 - 29 - 23.5 - 19.7a, b - 15.6a, b - 70 - 6.5 ID IDM Pulsed Drain Current Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C IS Avalanche Current Single-Pulse Avalanche Energy L = 0.1 mH IAS EAS Maximum Power Dissipation TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C PD - 2.9a, b - 30 45 7.8 5 3.5a, b 2.2a, b - 55 to 150 TJ, Tstg Operating Junction and Storage Temperature Range Unit V A mJ W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta, c Maximum Junction-to-Foot t 10 s Steady State Symbol RthJA RthJF Typical 29 13 Maximum 35 16 Unit °C/W Notes: a. Surface mounted on 1" x 1" FR4 board. b. t = 10 s. c. Maximum under steady state conditions is 80 °C/W. d. Based on TC = 25 °C. 1 DTM4459 www.din-tek.jp SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = - 250 µA - 30 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VDS/TJ V - 31 VGS(th) Temperature Coefficient VGS(th)/TJ ID = - 250 µA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA IGSS VDS = 0 V, VGS = ± 20 V ± 100 VDS = - 30 V, VGS = 0 V - 100 VDS = - 20 V, VGS = 0 V - 75 VDS = - 30 V, VGS = 0 V, TJ = 75 °C - 10 VDS = - 20 V, VGS = 0 V, TJ = 75 °C -3 Gate-Source Leakage IDSS Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea ID(on) RDS(on) Forward Transconductancea gfs Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off DelayTime Fall Time Turn-On Delay Time Rise Time Turn-Off DelayTime Fall Time VDS - 10 V, VGS = - 10 V VGS = - 10 V, ID = - 15 A tr -1 - 2.5 - 30 0.005 VGS = - 4.5 V, ID = - 10 A 0.0062 0.00775 VDS = - 10 V, ID = - 15 A 24 µA 6000 VDS = - 15 V, VGS = 0 V, f = 1 MHz 860 pF 790 VDS = - 15 V, VGS = - 10 V, ID = - 20 A VDS = - 15 V, VGS = - 4.5 V, ID = - 20 A 129 195 61 95 16.5 nC 23.5 f = 1 MHz VDD = - 15 V, RL = 1.5 ID - 10 A, VGEN = - 10 V, Rg = 1 0.6 3 6 16 30 16 30 80 150 tf 20 40 75 150 130 260 60 120 40 80 tr nA S td(on) td(off) V A 0.0039 td(on) td(off) mV/°C 5.3 VDD = - 15 V, RL = 1.5 ID - 10 A, VGEN = - 4.5 V, Rg = 1 tf ns Drain-Source Body Diode Characteristics Continous Source-Drain Diode Current IS Pulse Diode Forward Current ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb TC = 25 °C - 29 - 70 IS = - 3 A, VGS = 0 V IF = - 5 A, dI/dt = 100 A/µs, TJ = 25 °C A - 0.71 - 1.2 V 67 130 ns 74 150 nC 22 45 ns Notes: a. Pulse test; pulse width 300 µs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 2 DTM4459 www.din-tek.jp TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 4.0 70 VGS = 10 thru 4 V 3.2 I D - Drain Current (A) I D - Drain Current (A) 56 42 28 VGS = 3 V 2.4 TC = 125 °C 1.6 TC = 25 °C 0.8 14 TC = - 55 °C 0.0 0.0 0 0 1 2 3 4 VDS - Drain-to-Source Voltage (V) 5 2.4 3.2 4.0 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 9000 0.008 7200 0.007 VGS = 4.5 V C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 1.6 0.8 0.006 0.005 Ciss 5400 3600 VGS = 10 V 1800 0.004 Coss Crss 0 0.003 0 14 28 42 ID - Drain Current (A) 56 0 70 6 12 18 24 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 1.6 10 VDS = 10 V R DS(on) - On-Resistance (Normalized) ID = 20 A VGS - Gate-to-Source Voltage (V) 30 8 VDS = 15 V VDS = 20 V 6 4 2 0 0 30 60 90 120 150 ID = 15 A 1.4 VGS = 10 V 1.2 VGS = 4.5 V 1.0 0.8 0.6 - 50 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature 3 DTM4459 www.din-tek.jp TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 0.030 100 ID = 15 A TJ = 150 °C R DS(on) - On-Resistance (Ω) I S - Source Current (A) 10 TJ = 25 °C 1 0.1 0.01 0.024 0.018 0.012 TJ = 125 °C 0.006 TJ = 25 °C 0.001 0.0 0.000 0.2 0.4 0.6 0.8 1.0 1.2 0 2 VSD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage 8 10 200 0.6 160 ID = 250 µA 0.4 Power (W) V GS(th) Variance (V) 6 On-Resistance vs. Gate-to-Source Voltage 0.8 ID = 5 mA 0.2 120 80 0.0 40 - 0.2 - 0.4 - 50 - 25 0 25 50 75 100 125 0 0.001 150 0.01 TJ - Temperature (°C) 0.1 Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 100 Limited by R DS(on)* 1 ms I D - Drain Current (A) 10 10 ms 1 100 ms 1s 10 s 0.1 DC TA = 25 °C Single Pulse BVDSS 0.01 0.01 100 0.1 1 10 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which R DS(on) is specified Safe Operating Area 4 4 VGS - Gate-to-Source Voltage (V) 1 10 DTM4459 www.din-tek.jp TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 35 I D - Drain Current (A) 28 21 14 7 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) 10 2.0 8 1.6 Power (W) Power (W) Current Derating* 6 4 1.2 0.8 0.4 2 0.0 0 0 25 50 75 100 TC - Case Temperature (°C) Power, Junction-to-Foot 125 150 0 25 50 75 100 125 150 TC - Case Temperature (°C) Power Derating, Junction-to-Ambient * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. 5 DTM4459 www.din-tek.jp TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 80 °C/W 0.02 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) 10 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 10 -4 Single Pulse 10 -3 10 -2 10 -1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot 6 1 10 Package Information www.din-tek.jp SOIC (NARROW): 8-LEAD JEDEC Part Number: MS-012 8 6 7 5 E 1 3 2 H 4 S h x 45 D C 0.25 mm (Gage Plane) A e B All Leads q A1 L 0.004" MILLIMETERS INCHES DIM Min Max Min Max A 1.35 1.75 0.053 0.069 A1 0.10 0.20 0.004 0.008 B 0.35 0.51 0.014 0.020 C 0.19 0.25 0.0075 0.010 D 4.80 5.00 0.189 0.196 E 3.80 4.00 0.150 e 0.101 mm 1.27 BSC 0.157 0.050 BSC H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 L 0.50 0.93 0.020 0.037 q 0° 8° 0° 8° S 0.44 0.64 0.018 0.026 ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498 1 Application Note www.din-tek.jp RECOMMENDED MINIMUM PADS FOR SO-8 0.172 (4.369) 0.028 0.022 0.050 (0.559) (1.270) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index APPLICATION NOTE Return to Index 1 0.152 (3.861) 0.047 (1.194) 0.246 (6.248) (0.711) Legal Disclaimer Notice Disclaimer www.din-tek.jp ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Din-Tek Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Din-Tek”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Din-Tek makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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