VISHAY SI4802DY

Si4802DY
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
30
rDS(on) (W)
ID (A)
0.022 @ VGS = 10 V
8.4
0.030 @ VGS = 4.5 V
7.2
D
SO-8
S
1
8
D
S
2
7
D
S
3
6
D
G
4
5
D
G
Top View
S
Ordering Information: Si4802DY
Si4802DY-T1 (with Tape and Reel)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Drain-Source Voltage
VDS
30
Gate-Source Voltage
VGS
"20
Continuous Drain Current (TJ = 150_C)a
TA = 25_C
TA = 70_C
Pulsed Drain Current
ID
Continuous Source Current (Diode Conduction)a
IS
TA = 25_C
Maximum Power Dissipationa
TA = 70_C
Operating Junction and Storage Temperature Range
PD
V
8.4
6.1
6.7
4.9
IDM
A
20
2.1
1.1
2.5
1.3
1.6
0.8
TJ, Tstg
Unit
W
_C
- 55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Symbol
t v 10 sec
M i
Maximum
JJunction-to-Ambient
ti t A bi ta
Maximum Junction-to-Foot (Drain)
Steady State
Steady State
RthJA
RthJF
Typical
Maximum
40
50
80
95
20
25
Unit
_C/W
C/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71114
S-03951—Rev. B, 26-May-03
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2-1
Si4802DY
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
VGS(th)
VDS = VGS, ID = 250 mA
0.8
IGSS
VDS = 0 V, VGS = "20 V
"100
VDS = 24 V, VGS = 0 V
1
VDS = 24 V, VGS = 0 V, TJ = 55_C
5
Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
VDS w 5 V, VGS = 10 V
rDS(on)
Forward Transconductancea
Diode Forward Voltagea
V
nA
mA
20
A
VGS = 10 V, ID = 8.4 A
0.018
0.022
VGS = 4.5 V, ID = 7.2 A
0.024
0.030
gfs
VDS = 15 V, ID = 8.4 A
22
VSD
IS = 2.1 A, VGS = 0 V
0.8
1.2
13
20
W
S
V
Dynamicb
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Delay Time
2
nC
2.7
0.5
3.2
td(on)
8
16
tr
10
20
21
40
10
20
40
80
Rise Time
Turn-Off Delay Time
VDS = 15 V, VGS = 10 V, ID = 8.4 A
VDD = 15 V, RL = 15 W
ID ^ 1 A, VGEN = 10 V, RG = 6 W
td(off)
Fall Time
tf
Source-Drain Reverse Recovery Time
trr
IF = 2.1 A, di/dt = 100 A/ms
W
ns
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
20
20
3V
VGS = 10 thru 4 V
16
I D - Drain Current (A)
I D - Drain Current (A)
16
12
8
4
12
8
TC = 125_C
4
25_C
2V
- 55_C
0
0.0
0.5
1.0
1.5
2.0
2.5
VDS - Drain-to-Source Voltage (V)
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2-2
3.0
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
VGS - Gate-to-Source Voltage (V)
Document Number: 71114
S-03951—Rev. B, 26-May-03
Si4802DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Capacitance
1000
0.032
800
C - Capacitance (pF)
r DS(on) - On-Resistance ( W )
On-Resistance vs. Drain Current
0.040
VGS = 4.5 V
0.024
VGS = 10 V
0.016
0.008
Ciss
600
400
Coss
Crss
200
0.000
0
0
4
8
12
16
20
0
6
ID - Drain Current (A)
Gate Charge
24
30
On-Resistance vs. Junction Temperature
1.6
VDS = 15 V
ID = 8.4 A
r DS(on) - On-Resistance (W)
(Normalized)
V GS - Gate-to-Source Voltage (V)
18
VDS - Drain-to-Source Voltage (V)
10
8
6
4
2
VGS = 10 V
ID = 8.4 A
1.4
1.2
1.0
0.8
0
0
3
6
9
12
0.6
- 50
15
- 25
0
Qg - Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
50
75
100
125
150
On-Resistance vs. Gate-to-Source Voltage
0.04
r DS(on) - On-Resistance ( W )
TJ = 150_C
10
TJ = 25_C
1
0.0
25
TJ - Junction Temperature (_C)
20
I S - Source Current (A)
12
ID = 8.4 A
0.03
0.02
0.01
0.00
0.2
0.4
0.6
0.8
1.0
VSD - Source-to-Drain Voltage (V)
Document Number: 71114
S-03951—Rev. B, 26-May-03
1.2
0
2
4
6
8
10
VGS - Gate-to-Source Voltage (V)
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2-3
Si4802DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
Single Pulse Power
0.4
50
40
ID = 250 mA
- 0.0
Power (W)
V GS(th) Variance (V)
0.2
- 0.2
30
20
- 0.4
10
- 0.6
- 0.8
- 50
- 25
0
25
50
75
100
125
150
0
10 -3
10 -2
10 -1
TJ - Temperature (_C)
1
10
100
600
Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = RthJA = 80_C/W
3. TJM - TA = PDMZthJA(t)
4. Surface Mounted
Single Pulse
0.01
10 -4
10 -3
10 -2
10 -1
1
Square Wave Pulse Duration (sec)
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Foot
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 -4
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2-4
10 -3
10 -2
10 -1
Square Wave Pulse Duration (sec)
1
10
Document Number: 71114
S-03951—Rev. B, 26-May-03