Si3865BDV Vishay Siliconix Load Switch with Level-Shift FEATURES PRODUCT SUMMARY VDS2 (V) RDS(on) () ID (A) 0.060 at VIN = 4.5 V 2.9 1.8 to 8 0.100 at VIN = 2.5 V 2.2 0.175 at VIN = 1.8 V 1.7 DESCRIPTION The Si3865BDV includes a p- and n-channel MOSFET in a single TSOP-6 package. The low on-resistance p-channel TrenchFET® is tailored for use as a load switch. The n-channel, with an external resistor, can be used as a levelshift to drive the p-channel load-switch. The n-channel MOSFET has internal ESD protection and can be driven by logic signals as low as 1.5 V. The Si3865BDV operates on supply lines from 1.8 V to 8 V, and can drive loads up to 2.9 A. • Halogen-free According to IEC 61249-2-21 Definition • 60 m Low RDS(on) TrenchFET®: 1.8 V Rated • 1.8 V to 8 V Input • 1.5 V to 8 V Logic Level Control • Low Profile, Small Footprint TSOP-6 Package • 3000 V ESD Protection On Input Switch, VON/OFF • Adjustable Slew-Rate • Compliant to RoHS Directive 2002/95/EC APPLICATION CIRCUITS Si3865BDV 40 IL = 1 A VON/OFF = 3 V Ci = 10 µF Co = 1 µF 2, 3 4 32 VOUT VIN td(off) Q2 R1 tf C1 6 Time (µS) 6 24 16 5 ON/OFF Co tr LOAD Q1 td(on) 8 Ci 0 1 0 R2 4 6 8 R2 (k) GND R2 2 Note: For R2 switching variations with other VIN/R1 combinations See Typical Characteristics Switching Variation R2 at VIN = 2.5 V, R1 = 20 k COMPONENTS R1 Pull-Up Resistor Typical 10 k to 1 M* R2 Optional Slew-Rate Control Typical 0 to 100 k* C1 Optional Slew-Rate Control Typical 1000 pF The Si3865BDV is ideally suited for high-side load switching in portable applications. The integrated N-Channel level-shift device saves space by reducing external components. The slew rate is set externally so that rise-times can be tailored to different load types. * Minimum R1 value should be at least 10 x R2 to ensure Q1 turn-on. Document Number: 72848 S10-2142-Rev. D, 20-Sep-10 www.vishay.com 1 Si3865BDV Vishay Siliconix FUNCTIONAL BLOCK DIAGRAM Si3865BDV 4 TSOP-6 2, 3 D2 S2 Top View Q2 R2 1 6 R1, C1 D2 2 5 ON/OFF 6 R1, C1 Q1 5 ON/OFF D2 3 4 S2 1 Ordering Information: Si3865BDV-T1-E3 (Lead (Pb)-free) Si3865BDV-T1-GE3 (Lead (Pb)-free and Halogen-free) R2 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Input Voltage On/Off Voltage Symbol Limit VIN 8 VON/OFF 8 Continuousa, b Load Current V ± 2.9 IL Pulsedb, c Unit A ±6 Continuous Intrinsic Diode Conductiona IS Maximum Power Dissipationa PD 0.83 W TJ, Tstg - 55 to 150 °C ESD 3 kV Operating Junction and Storage Temperature Range ESD Rating, MIL-STD-883D Human Body Model (100 pF, 1500 ) -1 THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Maximum Junction-to-Ambient (continuous current)a RthJA 125 150 Maximum Junction-to-Foot (Q2) RthJC 40 55 Unit °C/W SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. Reverse Leakage Current IFL VIN = 8 V, VON/OFF = 0 V Diode Forward Voltage VSD IS = - 1 A Typ. Max. Unit 1 µA - 0.77 -1 V 8 V Off Characteristics OnN Characteristics Input Voltage Range On-Resistance (P-Channel) at 1 A On-State (P-Channel) Drain-Current VIN RDS(on) ID(on) 1.8 VON/OFF = 1.5 V, ID = 1 A VIN = 4.5 V 0.045 0.060 VIN = 2.5 V 0.075 0.100 VIN = 1.8 V 0.135 0.175 VIN-OUT 0.2 V, VIN = 5 V, VON/OFF = 1.5 V 1 VIN-OUT 0.3 V, VIN = 3 V, VON/OFF = 1.5 V 1 A Notes: a. Surface Mounted on FR4 board. b. VIN = 8 V, VON/OFF = 8 V, TA = 25 °C. c. Pulse test: pulse width 300 µs, duty cycle 2 %. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 72848 S10-2142-Rev. D, 20-Sep-10 Si3865BDV Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 6 0.40 VGS = 5 V thru 2 V VON/OFF = 1.5 V to 8 V 0.32 4 V DROP (V) ID - Drain Current (A) 5 3 0.24 TJ = 125 °C 0.16 TJ = 25 °C 1.5 V 2 0.08 1 0.00 0 0 1 2 3 4 0 5 1 2 3 VDS - Drain-to-Source Voltage (V) 4 5 6 IL - (A) VDROP vs. IL at VIN = 4.5 V Output Characteristics 1.0 0.6 VON/OFF = 1.5 V to 8 V 0.5 VON/OFF = 1.5 V to 8 V 0.8 V DROP (V) V DROP (V) 0.4 TJ = 125 °C 0.3 TJ = 25 °C 0.6 TJ = 125 °C TJ = 25 °C 0.4 0.2 0.2 0.1 0.0 0.0 0.0 0 1 2 3 4 5 6 0.5 1.0 1.5 2.0 2.5 3.0 IL - (A) IL - (A) VDROP vs. IL at VIN = 2.5 V VDROP vs. IL at VIN = 1.8 V 3.5 4.0 125 150 1.4 1.0 IL = 1 A VON/OFF = 1.5 V to 8 V 1.3 IL = 1 A VON/OFF = 1.5 V to 8 V 0.6 0.4 TJ = 125 °C 1.2 VIN = 5 V (Normalized) R DS(on) - On-Resistance VDROP (V) 0.8 1.1 VIN = 1.8 V 1.0 0.9 0.2 0.8 TJ = 25 °C 0.0 0 1 2 3 4 5 6 VIN (V) VDROP vs. VIN at IL = 1 A Document Number: 72848 S10-2142-Rev. D, 20-Sep-10 7 8 0.7 - 50 - 25 0 25 50 75 100 TJ - Junction Temperature (°C) Normalized On-Resistance vs. Junction Temperature www.vishay.com 3 Si3865BDV Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 0.5 60 0.4 I S - Source Current (A) R DS(on) - On-Resistance () IL = 1 A VON/OFF = 1.5 V to 8 V 0.3 0.2 TJ = 125 °C TJ = 150 °C TJ = 25 °C 1 0.1 TJ = 25 °C 0.0 0.1 0 1 2 3 4 5 6 7 8 0 0.2 0.4 VIN (V) 0.6 0.8 On-Resistance vs. Input Voltage 1.2 1.4 Source-Drain Diode Forward Voltage 40 25 td(off) 35 20 tf td(off) 30 Time (µs) 25 Time (µs) 1.0 VSD - Source-to-Drain Voltage (V) IL = 1 A VON/OFF = 3 V Ci = 10 µF Co = 1 µF 20 15 15 tr IL = 1 A VON/OFF = 3 V Ci = 10 µF Co = 1 µF 10 tf td(on) 10 5 tr 5 td(on) 0 0 0 2 4 6 8 10 0 2 4 6 8 R2 (k) R2 (k) Switching Variation R2 at VIN = 4.5 V, R1 = 20 k Switching Variation R2 at VIN = 2.5 V, R1 = 20 k 50 10 600 IL = 1 A VON/OFF = 3 V Ci = 10 µF Co = 1 µF 40 td(off) 500 tf Time (µs) Time (µs) 400 30 tf 20 200 td(off) tr 10 IL = 1 A VON/OFF = 3 V Ci = 10 µF Co = 1 µF 300 100 tr td(on) td(on) 0 0 0 1 2 3 4 5 6 R2 (k) Switching Variation R2 at VIN = 1.8 V, R1 = 20 k www.vishay.com 4 7 8 0 20 40 60 80 100 R2 (k) Switching Variation R2 at VIN = 4.5 V, R1 = 300 k Document Number: 72848 S10-2142-Rev. D, 20-Sep-10 Si3865BDV Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 350 400 350 tf 300 td(off) IL = 1 A VON/OFF = 3 V Ci = 10 µF Co = 1 µF 200 Time (µS) Time (µS) 250 150 300 tr 250 tf td(off) 200 IL = 1 A VON/OFF = 3 V Ci = 10 µF Co = 1 µF 150 tr td(on) 100 100 td(on) 50 50 0 0 0 20 40 60 80 100 0 Switching Variation R2 at VIN = 2.5 V, R1 = 300 k 20 40 60 80 100 Switching Variation R2 at VIN = 1.8 V, R1 = 300 k I D - Drain Current (A) 10 10 ms 1 Limited by RDS(on)* 100 ms 1s 10 s DC 0.1 TC = 25 °C Single Pulse 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Case 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 150 °C/W 0.02 3. T JM - TA = PDMZthJA(t) Single Pulse 0.01 10- 4 10- 3 4. Surface Mounted 10- 2 10- 1 1 Square Wave Pulse Dureation (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?72848. Document Number: 72848 S10-2142-Rev. D, 20-Sep-10 www.vishay.com 5 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000