Si1865DL New Product Vishay Siliconix Load Switch with Level-Shift PRODUCT SUMMARY VDS2 (V) 1.8 to 8 rDS(on) (W) ID (A) 0.215 @ VIN = 4.5 V "1.2 0.300 @ VIN = 2.5 V "1.0 0.440 @ VIN = 1.8 V "0.7 1.8ĆV Rated FEATURES D 215-mW Low rDS(on) TrenchFETR D 1.8 to 8-V Input D 1.5 to 8-V Logic Level Control D Low Profile, Small Footprint SC70-6 Package D 2000-V ESD Protection On Input Switch, VON/OFF D Adjustable Slew-Rate DESCRIPTION The Si1865DL includes a p- and n-channel MOSFET in a single SC70-6 package. The low on-resistance p-channel TrenchFET is tailored for use as a load switch. The n-channel, with an external resistor, can be used as a level-shift to drive the p-channel load-switch. The n-channel MOSFET has internal ESD protection and can be driven by logic signals as low as 1.5-V. The Si1865DL operates on supply lines from 1.8 to 8 V, and can drive loads up to 1.2 A. APPLICATION CIRCUITS Switching Variation R2 @ VIN = 2.5 V, R1 = 20 kW Si1865DL 20 IL = 1 A VON/OFF = 3 V Ci = 10 mF Co = 1 mF 2, 3 4 VOUT VIN 16 tr Q2 R1 C1 6 Time ( mS) 6 5 12 tf 8 td(off) ON/OFF Co LOAD Q1 4 td(on) Ci 0 1 0 R2 2 4 6 8 10 R2 (kW) GND R2 COMPONENTS R1 Pull-Up Resistor Typical 10 kW to 1 mW* R2 Optional Slew-Rate Control Typical 0 to 100 kW* C1 Optional Slew-Rate Control Typical 1000 pF Note: For R2 switching variations with other VIN/R1 combinations See Typical Characteristics The Si1865DL is ideally suited for high-side load switching in portable applications. The integrated n-channel level-shift device saves space by reducing external components. The slew rate is set externally so that rise-times can be tailored to different load types. *Minimum R1 value should be at least 10 x R2 to ensure Q1 turn-on. Document Number: 71297 S-02987—Rev. B, 29-Jan-01 www.vishay.com 1 Si1865DL New Product Vishay Siliconix FUNCTIONAL BLOCK DIAGRAM Si1865DL SC70-6 4 Top View 2, 3 D2 S2 Q2 R2 1 6 R1, C1 6 R1, C1 D2 2 5 ON/OFF D2 3 4 S2 Q1 5 ON/OFF 1 R2 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit VIN 8 VON/OFF 8 Input Voltage ON/OFF Voltage IL Pulsedb, c Continuous Intrinsic Diode Conductiona "3 IS Maximum Power Dissipationa Operating Junction and Storage Temperature Range ESD Rating, MIL-STD-883D Human Body Model (100 pF, 1500 W) V "1.2 Continuousa, b Load Current Unit A –0.4 PD 0.4 W TJ, Tstg –55 to 150 _C ESD 2 kV THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient (continuous Symbol Typical RthJA 260 320 RthJC 180 220 current)a Maximum Junction-to-Foot (Q2) Maximum Unit _ _C/W SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Reverse Leakage Current IFL VIN = 8 V, VON/OFF = 0 V Diode Forward Voltage VSD IS = –0.4 A Min Typ Max Unit 1 mA 0.85 1.1 V 8 V VON/OFF = 1.5 V, VIN = 4.5 V, ID = 1.2 A 0.180 0.215 VON/OFF = 1.5 V, VIN = 2.5 V, ID = 1.0 A 0.250 0.300 VON/OFF = 1.5 V, VIN = 1.8 V, ID = 0.7 A 0.367 0.440 OFF Characteristics ON Characteristics Input Voltage Range On-Resistance (p-channel) @ 1 A On-State (p-channel) Drain-Current VIN rDS(on) ID(on) 1.8 VIN-OUT v 0.2 V, VIN = 5 V, VON/OFF = 1.5 V 1 VIN-OUT v 0.3 V, VIN = 3 V, VON/OFF = 1.5 V 1 W A Notes a. Surface Mounted on FR4 Board. b. VIN = 8 V, VON/OFF = 8 V, TA = 25_C. c. Pulse test: pulse width v300 ms, duty cycle v2%. www.vishay.com 2 Document Number: 71297 S-02987—Rev. B, 29-Jan-01 Si1865DL New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) VDROP vs. IL @ VIN = 4.5 V VDROP vs. IL @ VIN = 2.5 V 1.0 0.8 VON/OFF = 1.5 to 8 V VON/OFF = 1.5 to 8 V 0.8 V DROP (V) V DROP (V) 0.6 TJ = 125_C 0.4 TJ = 25_C TJ = 125_C 0.4 TJ = 25_C 0.2 0.0 0.0 0.6 0.2 0.5 1.0 1.5 2.0 2.5 0.0 0.0 3.0 0.5 1.0 IL – (A) 1.5 2.0 2.5 IL – (A) VDROP vs. IL @ VIN = 1.8 V VDROP vs. VIN @ IL = 0.7 A 0.8 1.0 VON/OFF = 1.5 to 8 V VON/OFF = 1.5 to 8 V 0.6 V DROP (V) V DROP (V) 0.8 0.6 TJ = 125_C 0.4 0.4 TJ = 25_C TJ = 125_C 0.2 0.2 0.0 0.0 TJ = 25_C 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 1.6 1 2 IL – (A) VDROP Variance vs. Junction Temperature 5 6 On-Resistance vs. Input Voltage 1.0 IL = 0.7 A VON/OFF = 1.5 to 8 V 0.06 IL = 0.7 A VON/OFF = 1.5 to 8 V 0.8 VIN = 1.8 V r SS(on) – On-Resistance ( W ) V DROP Variance (V) 4 VIN (V) 0.10 0.02 VIN = 4.5 V –0.02 –0.06 –0.10 –50 3 0.6 0.4 TJ = 125_C 0.2 TJ = 25_C 0.0 –25 0 25 50 75 100 TJ – Junction Temperature (_C) Document Number: 71297 S-02987—Rev. B, 29-Jan-01 125 150 0 1 2 3 4 5 6 VIN (V) www.vishay.com 3 Si1865DL New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized On-Resistance vs. Junction Temperature Switching Variation R2 @ VIN = 4.5 V, R1 = 20 kW 20 1.5 IL = 1 A VON/OFF = 3 V Ci = 10 mF Co = 1 mF 16 1.3 1.1 Time ( mS) r DS(on) – On-Resistance (W) (Normalized) IL = 0.7 A VON/OFF = 1.5 to 8 V VIN = 1.8 V 0.9 tf td(off) 12 8 VIN = 4.5 V tr 4 0.7 td(on) 0 0.5 –50 –25 0 25 50 75 100 125 0 150 2 4 6 TJ – Junction Temperature (_C) Switching Variation R2 @ VIN = 2.5 V, R1 = 20 kW IL = 1 A VON/OFF = 3 V Ci = 10 mF Co = 1 mF Time ( mS) 16 10 Switching Variation R2 @ VIN = 1.8 V, R1 = 20 kW 30 12 tf 8 tr IL = 1 A VON/OFF = 3 V Ci = 10 mF Co = 1 mF 24 tr Time ( mS) 20 8 R2 (kW) 18 12 td(off) tf 6 4 td(off) td(on) td(on) 0 0 0 2 200 4 6 8 0 10 2 4 6 8 R2 (kW) R2 (kW) Switching Variation R2 @ VIN = 4.5 V, R1 = 300 kW Switching Variation R2 @ VIN = 2.5 V, R1 = 300 kW 150 td(off) 160 tf 120 tf Time ( mS) Time ( mS) td(off) 120 IL = 1 A VON/OFF = 3 V Ci = 10 mF Co = 1 mF 80 90 IL = 1 A VON/OFF = 3 V Ci = 10 mF Co = 1 mF 60 tr 40 td(on) 30 tr td(on) 0 0 0 20 40 60 R2 (kW) www.vishay.com 4 80 100 0 20 40 60 80 100 R2 (kW) Document Number: 71297 S-02987—Rev. B, 29-Jan-01 Si1865DL New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Switching Variation R2 @ VIN = 1.8 V, R1 = 300 kW 120 tf 90 Time ( mS) td(off) IL = 1 A VON/OFF = 3 V Ci = 10 mF Co = 1 mF 60 td(on) tr 30 0 0 20 40 60 80 R2 (kW) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 320_C/W 0.02 3. TJM – TA = PDMZthJA(t) Single Pulse 0.01 10–4 10–3 4. Surface Mounted 10–2 10–1 1 10 100 600 Square Wave Pulse Dureation (sec) Document Number: 71297 S-02987—Rev. B, 29-Jan-01 www.vishay.com 5