Si3865DV New Product Vishay Siliconix Load Switch with Level-Shift VDS2 (V) 1 8 to 8 1.8 rDS(on) () ID (A) 0.080 @ VIN = 4.5 V 2.7 0.110 @ VIN = 2.5 V 2.2 0.175 @ VIN = 1.8 V 1.7 Low Profile, Small Footprint TSOP-6 Package 3000-V ESD Protection On Input Switch, VON/OFF Adjustable Slew-Rate 80-m Low rDS(on) TrenchFET 1.8 to 8-V Input 1.5 to 8-V Logic Level Control The Si3865DV includes a p- and n-channel MOSFET in a single TSOP-6 package. The low on-resistance p-channel TrenchFET is tailored for use as a load switch. The n-channel, with an external resistor, can be used as a level-shift to drive the p-channel load-switch. The n-channel MOSFET has internal ESD protection and can be driven by logic signals as low as 1.5-V. The Si3865DV operates on supply lines from 1.8 to 8-V, and can drive loads up to 2.7 A. Switching Variation R2 @ VIN = V, R1 = k Si3865DV 40 IL = 1 A VON/OFF = 3 V Ci = 10 F Co = 1 F 2, 3 4 VOUT VIN 32 Q2 td(off) R1 C1 tf 6 Time ( S) 6 5 ON/OFF Co 24 16 LOAD Q1 tr td(on) 8 Ci 0 1 0 R2 2 4 6 8 R2 (k) GND R2 R1 Pull-Up Resistor Typical 10 k to 1 m* R2 Optional Slew-Rate Control Typical 0 to 100 k* C1 Optional Slew-Rate Control Typical 1000 pF Note: For R2 switching variations with other VIN/R1 combinations See Typical Characteristics The Si3865DV is ideally suited for high-side load switching in portable applications. The integrated n-channel level-shift device saves space by reducing external components. The slew rate is set externally so that rise-times can be tailored to different load types. *Minimum R1 value should be at least 10 x R2 to ensure Q1 turn-on. Document Number: 70867 S-60515—Rev. A, 05-Apr-99 www.vishay.com FaxBack 408-970-5600 2-1 Si3865DV New Product Vishay Siliconix Si3865DV TSOP-6 4 Top View 2, 3 D2 S2 Q2 R2 1 6 R1, C1 6 R1, C1 D2 2 5 ON/OFF D2 3 4 S2 Q1 5 ON/OFF 1 R2 Parameter Input Voltage ON/OFF Voltage Continuousa, b Load Current Pulsedb, c Continuous Intrinsic Diode Conductiona Symbol Limit VIN 8 VON/OFF 8 Operating Junction and Storage Temperature Range ESD Rating, MIL-STD-883D Human Body Model (100 pF, 1500 ) V "2.7 IL "6 IS Maximum Power Dissipationa Unit A –1 PD 0.83 W TJ, Tstg –55 to 150 C ESD 3 kV Parameter Symbol Typical Maximum Maximum Junction-to-Ambient (continuous current)a RthJA 120 150 Maximum Junction-to-Foot (Q2) RthJC 35 50 Unit C/W Parameter Symbol Test Condition Reverse Leakage Current IFL VIN = 8 V, VON/OFF = 0 V Diode Forward Voltage VSD IS = –1 A Min Typ Max Unit 1 A –0.7 –1 V 8 V VIN = 4.5 V 0.064 0.080 VIN = 2.5 V 0.092 0.110 VIN = 1.8 V 0.135 0.175 OFF Characteristics ON Characteristics Input Voltage Range On-Resistance (p-channel) O R i ( h l) @ 1 A On-State (p-channel) Drain-Current VIN rDS(on) ID(on) 1.8 VON/OFF = 1 1.5 5V ID = 1 A VIN-OUT v 0.2 V, VIN = 5 V, VON/OFF = 1.5 V 1 VIN-OUT v 0.3 V, VIN = 3 V, VON/OFF = 1.5 V 1 A Notes a. Surface Mounted on FR4 Board. b. VIN = 8 V, VON/OFF = 8 V, TA = 25C. c. Pulse test: pulse width v300 s, duty cycle v2%. www.vishay.com FaxBack 408-970-5600 2-2 Document Number: 70867 S-60515—Rev. A, 05-Apr-99 Si3865DV New Product Vishay Siliconix VDROP vs. IL @ VIN = V VDROP vs. IL @ VIN = V 0.5 VON/OFF = 1.5 to 8 V VON/OFF = 1.5 to 8 V V DROP (V) V DROP (V) 0.4 0.3 TJ = 125C 0.2 TJ = 25C TJ = 125C TJ = 25C 0.1 0 0 1 2 3 4 5 IL – (A) IL – (A) VDROP vs. IL @ VIN = 1.8 V VDROP vs. VIN @ IL = 1 A 0.40 0.5 IL = 1 A VON/OFF = 1.5 to 8 V VON/OFF = 1.5 to 8 V 0.32 V DROP (V) 0.4 V DROP (V) 0.3 TJ = 125C 0.2 TJ = 25C 0.24 0.16 TJ = 125C 0.1 0.08 0 0 TJ = 25C 0 0.4 0.8 1.2 1.6 0 2.0 2 4 IL – (A) 6 8 VIN (V) VDROP Variance vs. Junction Temperature On-Resistance vs. Input Voltage 0.4 0.06 IL = 1 A VON/OFF = 1.5 to 8 V IL = 1 A VON/OFF = 1.5 to 8 V r SS(on) – On-Resistance ( ) V DROP Variance (V) 0.04 VIN = 5 V 0.02 VIN = 1.8 V 0.00 –0.02 0.3 0.2 TJ = 125C 0.1 TJ = 25C –0.04 –50 0 –25 0 25 50 75 100 TJ – Junction Temperature (C) Document Number: 70867 S-60515—Rev. A, 05-Apr-99 125 150 0 2 4 6 8 VIN (V) www.vishay.com FaxBack 408-970-5600 2-3 Si3865DV New Product Vishay Siliconix Normalized On-Resistance vs. Junction Temperature Switching Variation R2 @ VIN = V, R1 = k 50 1.4 td(off) 40 1.2 tf VIN = 5 V VIN = 1.8 V Time ( S) r DS(on) – On-Resistance () (Normalized) IL = 1 A VON/OFF = 1.5 to 8 V 1.0 30 IL = 1 A VON/OFF = 3 V Ci = 10 F Co = 1 F 20 tr 0.8 10 0.6 –50 td(on) 0 –25 0 25 50 75 100 125 0 150 2 4 TJ – Junction Temperature (C) Switching Variation R2 @ VIN = V, R1 = k 40 td(off) IL = 1 A VON/OFF = 3 V Ci = 10 F Co = 1 F 40 tr Time ( S) Time ( S) tf 24 16 tr 30 tf 20 td(on) td(on) 10 8 td(off) 0 0 0 1000 2 4 6 0 8 1 2 3 4 5 R2 (k) R2 (k) Switching Variation R2 @ VIN = V, R1 = k Switching Variation R2 @ VIN = V, R1 = k 500 IL = 1 A VON/OFF = 3 V Ci = 10 F Co = 1 F 800 400 td(off) 600 Time ( S) Time ( S) 8 Switching Variation R2 @ VIN = 1.8 V, R1 = k 50 IL = 1 A VON/OFF = 3 V Ci = 10 F Co = 1 F 32 6 R2 (k) tf 400 6 tf td(off) 300 IL = 1 A VON/OFF = 3 V Ci = 10 F Co = 1 F 200 tr 200 100 td(on) tr td(on) 0 0 20 40 R2 (k) www.vishay.com FaxBack 408-970-5600 2-4 60 0 80 0 20 40 60 80 R2 (k) Document Number: 70867 S-60515—Rev. A, 05-Apr-99 Si3865DV New Product Vishay Siliconix Switching Variation R2 @ VIN = 1.8 V, R1 = k 400 tf Time ( S) 320 240 td(off) IL = 1 A VON/OFF = 3 V Ci = 10 F Co = 1 F 160 td(on) 80 tr 0 0 10 20 30 40 50 60 R2 (k) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 150C/W 0.02 3. TJM – TA = PDMZthJA(t) Single Pulse 0.01 10–4 10–3 10–2 4. Surface Mounted 10–1 1 10 100 600 Square Wave Pulse Dureation (sec) Document Number: 70867 S-60515—Rev. A, 05-Apr-99 www.vishay.com FaxBack 408-970-5600 2-5