Si1040X Vishay Siliconix Load Switch with Level-Shift FEATURES PRODUCT SUMMARY VDS2 (V) RDS(on) (Ω) ID (A) 0.625 at VIN = 4.5 V ± 0.43 1.8 to 8 0.890 at VIN = 2.5 V ± 0.36 1.25 at VIN = 1.8 V ± 0.3 Si1040X 4 2, 3 S2 Halogen-free Option Available TrenchFET® Power MOSFET 1.8 to 8 V Input RoHS COMPLIANT 1.5 to 8 V Logic Level Control ® Smallest LITTLE FOOT Package: 1.6 mm x 1.6 mm 2000 V ESD Protection On Input Switch, VON/OFF Adjustable Slew-Rate D2 Q2 DESCRIPTION The Si1040X includes a P- and N-Channel MOSFET in a single SC89-6 package. The low on-resistance P-Channel TrenchFET is tailored for use as a load switch. The N-Channel, with an external resistor, can be used as a level-shift to drive the P-Channel load-switch. The N-Channel MOSFET has internal ESD protection and can be driven by logic signals as low as 1.5 V. The Si1040X operates on supply lines from 1.8 V to 8 V, and can drive loads up to 0.43 A. 6 R1, C1 Q1 5 • • • • • • • ON/OFF 1 R2 SC89-6 Top View R2 D2 1 6 R1, C1 2 5 ON/OFF Marking Code P WL Lot Traceability and Date Code D2 3 4 S2 Part Number Code Ordering Information: Si1040X-T1-E3 (Lead (Pb)-free) Si1040X-T1-GE3 (Lead (Pb)-free and Halogen-free) TYPICAL APPLICATION CIRCUIT Si1040X 20 Switching Variation R2 at V IN = 2.5 V, R1 = 20 kΩ 2, 3 4 VOUT VIN tf 16 Q2 R1 C1 6 Time (µs) 6 5 ON/OFF Co IL = 0.36 A VON/OFF = 3 V Ci = 10 µF Co = 1 µF 12 8 tr LOAD Q1 td(off) 4 td(on) Ci 0 1 0 R2 R2 Document Number: 71809 S-80641-Rev. C, 24-Mar-08 GND 2 4 6 8 10 R2 (kΩ) Note: For R2 switching variations with other VIN/R1 combinations See Typical Characteristics www.vishay.com 1 Si1040X Vishay Siliconix The Si1040X is ideally suited for high-side load switching in portable applications. The integrated N-Channel level-shift device saves space by reducing external components. The slew rate is set externally so that rise-times can be tailored to different load types. COMPONENTS R1 Pull-Up Resistor Typical 10 kΩ to 1 mΩa R2 Optional Slew-Rate Control Typical 0 to 100 kΩa C1 Optional Slew-Rate Control Typical 1000 pF Notes: a. Minimum R1 value should be at least 10 x R2 to ensure Q1 turnon. ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit VIN 8 VON/OFF 8 Input Voltage ON/OFF Voltage Continuousa, b Load Current Pulsedb, c Continuous Intrinsic Diode Conduction a a Maximum Power Dissipation Operating Junction and Storage Temperature Range ESD Rating, MIL-STD-883D Human Body Model (100 pF, 1500 Ω) Unit V ± 0.43 IL A ± 1.0 IS - 0.15 PD 0.174 TJ, Tstg - 55 to 150 °C ESD 2 kV W THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Maximum Junction-to-Ambient (Continuous Current) RthJA 600 720 Maximum Junction-to-Foot (Q2) RthJC 450 540 a Unit °C/W Notes: a. Surface Mounted on 1" x 1" FR4 board. SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Reverse Leakage Current IFL VIN = 8 V, VON/OFF = 0 V Diode Forward Voltage VSD IS = - 0.15 A Min. Typ. Max. Unit 1 µA 0.85 1.2 V 8 V VON/OFF = 1.5 V, VIN = 4.5 V, ID = 0.43 A 0.500 0.625 VON/OFF = 1.5 V, VIN = 2.5 V, ID = 0.36 A 0.710 0.890 VON/OFF = 1.5 V, VIN = 1.8 V, ID = 0.3 A 1.0 1.25 OFF Characteristics ON Characteristics Input Voltage Range On-Resistance (P-Channel) at 1 A On-State (P-Channel) Drain Current VIN RDS(on) ID(on) 1.8 VIN-OUT ≤ 0.2 V, VIN = 5 V, VON/OFF = 1.5 V 1 VIN-OUT ≤ 0.3 V, VIN = 3 V, VON/OFF = 1.5 V 0.8 Ω A Notes: a. Surface Mounted on FR4 board. b. VIN = 8 V, VON/OFF = 8 V, TA = 25 °C. c. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 71809 S-80641-Rev. C, 24-Mar-08 Si1040X Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1.4 1.0 VON/OFF = 1.5 to 8 V VON/OFF = 1.5 to 8 V 1.2 0.8 0.6 V DROP (V) V DROP (V) 1.0 TJ = 125 °C 0.4 TJ = 25 °C 0.8 TJ = 125 °C 0.6 TJ = 25 °C 0.4 0.2 0.2 0.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0.0 0.0 2.0 0.2 0.4 0.6 0.8 1.4 1.6 1.8 VDROP vs. IL at VIN = 2.5 V 1.6 0.8 VON/OFF = 1.5 to 8 V VON/OFF = 1.5 to 8 V 0.7 1.2 0.6 1.0 V DROP (V) VDROP (V) 1.2 I L - (A) I L - (A) VDROP vs. IL at VIN = 4.5 V 1.4 1.0 TJ = 125 °C 0.8 TJ = 25 °C 0.6 0.5 TJ = 125 °C 0.4 0.3 TJ = 25 °C 0.4 0.2 0.2 0.1 0.0 0.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 4 VIN (V) VDROP vs. IL at VIN = 0.5 V 5 1.6 IL = 0.3 A VON/OFF = 1.8 to 8 V IL = 0.3 A VON/OFF = 1.5 to 8 V 1.4 R SS(on) - On-Resistance (Ω) VDROP Variance (V) 3 I L - (A) 0.10 VIN = 1.8 V 0.05 VIN = 4.5 V 0.00 - 0.05 - 0.10 - 0.15 - 50 2 VDROP vs. IL at VIN = 1.8 V 0.20 0.15 1 1.2 1.0 TJ = 125 °C 0.8 0.6 TJ = 25 °C 0.4 0.2 0.0 - 25 0 25 50 75 100 125 150 0 1 2 3 4 TJ - Junction Temperature (°C) VIN (V) VDROP Variance vs. Junction Temperature On-Resistance vs. Input Voltage Document Number: 71809 S-80641-Rev. C, 24-Mar-08 5 www.vishay.com 3 Si1040X Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1.6 20 IL = 0.3 A VON/OFF = 1.5 to 8 V 1.4 VIN = 1.8 V tf 1.2 IL = 0.36 A VON/OFF = 3 V Ci = 10 µF Co = 1 µF VIN = 4.5 V 1.0 Time (µs) (Normalized) R DS(on) - On-Resistance 16 0.8 0.6 12 8 td(off) tr 0.4 4 0.2 td(on) 0.0 - 50 0 - 25 0 25 50 75 100 125 150 0 2 4 6 8 TJ - Junction Temperature (°C) R2 (kΩ) Normalized On-Resistance vs. Junction Temperature Switching Variation R2 at VIN = 4.5 V, R1 = 20 kΩ 20 10 20 tf tf 16 16 12 Time (µs) Time (µs) tr IL = 0.36 A VON/OFF = 3 V Ci = 10 µF Co = 1 µF tr 8 8 td(off) 4 IL = 0.36 A VON/OFF = 3 V Ci = 10 µF Co = 1 µF 12 td(off) 4 td(on) td(on) 0 0 0 2 4 6 8 10 0 2 4 R2 (kΩ) 8 10 R2 (kΩ) Switching Variation R2 at VIN = 2.5 V, R1 = 20 kΩ Switching Variation R2 at VIN = 1.8 V, R1 = 20 kΩ 80 80 IL = 0.36 A VON/OFF = 3 V Ci = 10 µF Co = 1 µF td(off) tf 60 Time (µF) 60 Time (µs) 6 IL = 0.36 A VON/OFF = 3 V Ci = 10 µF Co = 1 µF 40 20 tf td(off) 40 tr 20 td(on) tr td(on) 0 0 www.vishay.com 4 20 40 60 80 0 100 0 20 40 60 80 R2 (kΩ) R2 (kΩ) Switching Variation R2 at VIN = 4.5 V, R1 = 300 kΩ Switching Variation R2 at VIN = 2.5 V, R1 = 300 kΩ 100 Document Number: 71809 S-80641-Rev. C, 24-Mar-08 Si1040X Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 80 tf Time (µs) 60 td(off) IL = 0.36 A VON/OFF = 3 V Ci = 10 µF Co = 1 µF 40 tr td(on) 20 0 0 20 40 60 80 100 R2 (kΩ) Switching Variation R2 at VIN = 1.8 V, R1 = 300 kΩ 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 720 °C/W 0.02 3. TJM - TA = PDMZthJA(t) Single Pulse 0.01 10 -4 10 -3 4. Surface Mounted 10 -2 10 -1 1 10 100 600 Square Wave Pulse Dureation (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?71809. Document Number: 71809 S-80641-Rev. C, 24-Mar-08 www.vishay.com 5 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1