Si1869DH Vishay Siliconix Load Switch with Level-Shift FEATURES PRODUCT SUMMARY VDS2 (V) rDS(on) (Ω) ID (A) 0.165 at VIN = 4.5 V ± 1.2 1.8 to 20 0.222 at VIN = 2.5 V ± 1.0 0.303 at VIN = 1.8 V ± 0.7 • TrenchFET® Power MOSFETS: 1.8 V Rated • ESD Protected: 2000 V On Input Switch, VON/OFF • 165 mΩ Low rDS(on) • 1.8 to 20 V Input • 1.5 to 8 V Logic Level Control • Low Profile, Small Footprint SC70-6 Package • Adjustable Slew-Rate RoHS COMPLIANT APPLICATIONS • Level Shift for Portable Devices DESCRIPTION The Si1869DH includes a P- and N-Channel MOSFET in a single SC70-6 package. The low on-resistance P-Channel TrenchFET is tailored for use as a load switch. The N-Channel, with an external resistor, can be used as a level-shift to drive the P-Channel load-switch. The N-Channel MOSFET has internal ESD protection and can be driven by logic signals as low as 1.5 V. The Si1869DH operates on supply lines from 1.8 to 20 V, and can drive loads up to 1.2 A. APPLICATION CIRCUITS 40 Si1869DH tf 35 2, 3 4 IL = 1 A VON/OFF = 3 V Ci = 10 µF Co = 1 µF 30 VOUT VIN Q2 C1 6 Time (µS) R1 6 25 20 td(off) 15 5 ON/OFF Co LOAD 10 Q1 5 tr td(on) 0 Ci 0 1 2 4 6 8 10 R2 (kΩ) R2 GND R2 Note: For R2 switching variations with other VIN/R1 combinations See Typical Characteristics Switching Variation R2 at VIN = 2.5 V, R1 = 20 kΩ COMPONENTS R1 Pull-Up Resistor Typical 10 kΩ to 1 MegaΩ* R2 Optional Slew-Rate Control Typical 0 to 100 kΩ* C1 Optional Slew-Rate Control Typical 1000 pF The Si1869DH is ideally suited for high-side load switching in portable applications. The integrated N-Channel level-shift device saves space by reducing external components. The slew rate is set externally so that rise-times can be tailored to different load types. *Minimum R1 value should be at least 10 x R2 to ensure Q1 turn-on. Document Number: 73449 S-61965-Rev. B, 09-Oct-06 www.vishay.com 1 Si1869DH Vishay Siliconix FUNCTIONAL BLOCK DIAGRAM Si1869DH SC70-6 4 Top View 2, 3 D2 S2 Q2 1 6 R1, C1 D2 2 5 ON/OFF 6 VC D2 3 XX 5 Lot Traceability and Date Code S2 4 R1, C1 Marking Code YY R2 Q1 ON/OFF Part # Code R2 Ordering Information: Si1869DH-T1-E3 (Lead (Pb)-free) 1 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Drain-Source Voltage (D2-S2) VDS - 20 Input Voltage VIN 20 VON/OFF 8 ON/OFF Voltage Continuousa, b Load Current Continuous Intrinsic Diode Conduction a A ±3 IS - 0.4 PD 1.0 TJ, Tstg - 55 to 150 °C ESD 2 kV a Maximum Power Dissipation Operating Junction and Storage Temperature Range V ± 1.2 IL Pulsedb, c Unit ESD Rating, MIL-STD-883D Human Body Model (100 pF, 1500 Ω) W THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient (continuous Symbol Typical Maximum RthJA 100 125 RthJF 44 55 current)a Maximum Junction-to-Foot (Q2) Unit °C/W SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Reverse Leakage Current IFL VIN = 8 V, VON/OFF = 0 V Diode Forward Voltage VSD IS = - 0.4 A Min Typ Max Unit 1 µA 1.1 V OFF Characteristics 0.4 0.6 ON Characteristics Input Voltage Range VIN Drain to Source Breakdown Voltage (P-Channel) VDS VGS = 0 V, ID = - 250 µA VON/OFF = 1.5 V, VIN = 4.5 V, ID = 1.2 A 0.132 0.165 rDS(on) VON/OFF = 1.5 V, VIN = 2.5 V, ID = 1.0 A 0.177 0.222 0.242 0.303 On-Resistance (P-Channel) at 1 A 1.8 ID(on) V - 20 VON/OFF = 1.5 V, VIN = 1.8 V, ID = 0.7 A On-State (P-Channel) Drain-Current 20 VIN-OUT ≤ 0.2 V, VIN = 5 V, VON/OFF = 1.5 V 1 VIN-OUT ≤ 0.3 V, VIN = 3 V, VON/OFF = 1.5 V 1 Ω A Notes: a. Surface Mounted on FR4 Board. b. VIN = 20 V, VON/OFF = 8 V, TA = 25 °C. c. Pulse test: pulse width ≤ 300 µs, duty cycle ≤ 2 %. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 73449 S-61965-Rev. B, 09-Oct-06 Si1869DH Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless noted 0.6 0.6 0.5 0.4 0.4 V DROP (V) V DROP (V) VON/OFF = 1.5 to 8 V 0.5 TJ = 125 °C 0.3 TJ = 25 °C VON/OFF = 1.5 to 8 V TJ = 125 °C 0.3 0.2 0.2 TJ = 25 °C 0.1 0.1 0.0 0.0 0.5 1.0 1.5 2.0 2.5 0.0 0.0 3.0 0.5 1.0 1.5 2.0 2.5 IL - (A) IL - (A) VDROP vs. IL at VIN = 2.5 V VDROP vs. IL at VIN = 4.5 V 0.5 0.6 VON/OFF = 1.5 to 8 V 0.4 0.4 V DROP (V) V DROP (V) 0.5 VON/OFF = 1.5 to 8 V TJ = 125 °C 0.3 TJ = 25 °C 0.2 0.3 0.2 TJ = 125 °C 0.1 0.1 0.0 0.0 TJ = 25 °C 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 1.6 1 2 3 6 VDROP vs. VIN at IL = 0.7 A 0.5 0.10 IL = 0.7 A VON/OFF = 1.5 to 8 V 0.06 IL = 0.7 A VON/OFF = 1.5 to 8 V 0.4 VIN = 1.8 V r SS(on) - On-Resistance (Ω) V DROP Variance (V) 5 VIN (V) IL - (A) VDROP vs. IL at VIN = 1.8 V 0.02 VIN = 4.5 V - 0.02 - 0.06 - 0.10 - 50 4 0.3 TJ = 125 °C 0.2 TJ = 25 °C 0.1 0.0 - 25 0 25 50 75 100 125 TJ - Junction Temperature (°C) VDROP Variance vs. Junction Temperature Document Number: 73449 S-61965-Rev. B, 09-Oct-06 150 0 1 2 3 4 5 6 VIN (V) On-Resistance vs. Input Voltage www.vishay.com 3 Si1869DH Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless noted 20 1.6 VIN = 4.5 V 1.4 IL = 1 A VON/OFF = 3 V Ci = 10 µF Co = 1 µF 16 td(off) tf VIN = 1.8 V 1.2 Time ( µS) rDS(on) - On-Resiistance (Normalized) IL = 0.7 A VON/OFF = 1.5 to 8 V 1.0 12 8 0.8 4 0.6 - 50 0 - 25 0 25 50 75 100 125 150 tr td(on) 0 2 4 6 8 TJ - Junction Temperature (°C) R2 (kΩ) Normalized On-Resistance vs. Junction Temperature Switching Variation R2 at VIN = 4.5 V, R1 = 20 kΩ 10 100 40 tf 35 IL = 1 A VON/OFF = 3 V Ci = 10 µF Co = 1 µF 25 20 td(off) 15 tf 80 Time ( µS) Time ( µS) 30 IL = 1 A VON/OFF = 3 V Ci = 10 µF Co = 1 µF 60 40 10 td(off) 20 5 tr td(on) tr 0 0 0 2 4 6 8 0 10 td(on) 2 4 R2 (kΩ) Switching Variation R2 at VIN = 2.5 V, R1 = 20 kΩ 8 10 Switching Variation R2 at VIN = 1.8 V, R1 = 20 kΩ 250 200 td(off) td(off) 200 150 Time ( µS) 150 Time ( µS) 6 R2 (kΩ) IL = 1 A VON/OFF = 3 V Ci = 10 µF Co = 1 µF 100 IL = 1 A VON/OFF = 3 V Ci = 10 µF Co = 1 µF 100 tf tf 50 50 tr td(on) 0 td(on) tr 0 0 20 40 60 80 R2 (kΩ) Switching Variation R2 at VIN = 4.5 V, R1 = 300 kΩ www.vishay.com 4 100 0 20 40 60 80 100 R2 (kΩ) Switching Variation R2 at VIN = 2.5 V, R1 = 300 kΩ Document Number: 73449 S-61965-Rev. B, 09-Oct-06 Si1869DH Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless noted 200 td(off) IL = 1 A VON/OFF = 3 V Ci = 10 µF Co = 1 µF Time ( µS) 150 100 tf 50 td(on) tr 0 0 20 40 60 80 100 R2 (kΩ) Switching Variation R2 at VIN = 1.8 V, R1 = 300 kΩ 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA =100 °C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10- 4 10- 3 10- 2 10- 1 1 Square Wave Pulse Duration (sec) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient Document Number: 73449 S-61965-Rev. B, 09-Oct-06 www.vishay.com 5 Si1869DH Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless noted Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 Square Wave Pulse Duration (sec) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?73449. www.vishay.com 6 Document Number: 73449 S-61965-Rev. B, 09-Oct-06 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. 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