UNISONIC TECHNOLOGIES CO., LTD 12N80 Power MOSFET 12A, 800V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 12N80 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is specialized in allowing a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode. The UTC 12N80 is universally applied in high efficiency switch mode power supply. FEATURES * RDS(on) < 1.0 Ω @ VGS=10V * High switching speed * Improved dv/dt capability * 100% avalanche tested SYMBOL ORDERING INFORMATION Ordering Number Lead Free Halogen Free 12N80L-T47-T 12N80G-T47-T 12N80L-T3P-T 12N80G-T3P-T 12N80L-TC3-T 12N80G-TC3-T 12N80L-TF2-T 12N80G-TF2-T Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-247 TO-3P TO-230 TO-220F2 Pin Assignment 1 2 3 G D S G D S G D S G D S Packing Tube Tube Tube Tube MARKING www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd 1 of 6 QW-R502-594.G 12N80 Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 800 V Gate-Source Voltage VGSS ±30 V ID 12 A Continuous (TC=25°C) Drain Current Pulsed (Note 2) IDM 48 A Avalanche Current (Note 2) IAR 12 A TO-247 360 W TO-3P 390 W Power Dissipation PD TO-230 167 W TO-220F2 51 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55~+150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating: Pulse width limited by maximum junction temperature. THERMAL DATA PARAMETER TO-247 Junction to Ambient TO-3P TO-220F2/TO-230 TO-247 TO-3P Junction to Case TO-230 TO-220F2 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw SYMBOL θJA θJC RATINGS 50 40 62.5 0.35 0.32 0.75 2.43 UNIT °C/W °C/W °C/W °C/W °C/W °C/W °C/W 2 of 6 QW-R502-594.G 12N80 Power MOSFET ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS ID=250µA, VGS=0V Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ID=250µA, Referenced to 25°C VDS=800V, VGS=0V Drain-Source Leakage Current IDSS VDS=640V, TC=125°C Forward VGS=+30V, VDS=0V Gate- Source Leakage Current IGSS Reverse VGS=-30V, VDS=0V ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=6A DYNAMIC PARAMETERS Input Capacitance CISS VGS=0V, VDS=25V, f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Total Gate Charge QG VGS=10V, VDS=640V, ID=12A Gate to Source Charge QGS (Note 1, 2) Gate to Drain Charge QGD Turn-ON Delay Time tD(ON) Rise Time tR VDD=400V, ID=12A, RG=25Ω (Note 1, 2) Turn-OFF Delay Time tD(OFF) Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS Maximum Body-Diode Pulsed Current ISM Drain-Source Diode Forward Voltage VSD IS=12A, VGS=0V Body Diode Reverse Recovery Time trr VGS=0V, IS=12A, dIF/dt=100A/µs (Note 1) Body Diode Reverse Recovery Charge QRR Note: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2% 2. Essentially independent of operating temperature UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 800 V V/°C 1.0 10 100 100 -100 3.0 0.75 5.0 1.0 4200 315 90 123 27 49 100 198 340 180 1000 17.0 µA nA nA V Ω pF pF pF 155 45 80 120 220 360 200 nC nC nC ns ns ns ns 12 48 1.4 A A V ns µC 3 of 6 QW-R502-594.G 12N80 Power MOSFET TEST CIRCUITS AND WAVEFORMS VGS Same Type as DUT 12V QG 10V 200nF 50kΩ VDS 300nF QGS QGD VGS DUT 3mA Charge Gate Charge Test Circuit Gate Charge Waveforms Resistive Switching Test Circuit Resistive Switching Waveforms 2 EAS= 1 2 LIAS VDS RG BVDSS BVDSS-VDD BVDSS ID L IAS 10V ID(t) DUT tP VDD VDD VDS(t) tP Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Time Unclamped Inductive Switching Waveforms 4 of 6 QW-R502-594.G 12N80 Power MOSFET TEST CIRCUITS AND WAVEFORMS(Cont.) + DUT VDS RG L ISD VGS VDD Driver Same Type as DUT dv/dt controlled by RG ISD controlled by pulse period Peak Diode Recovery dv/dt Test Circuit & Waveforms VGS (Driver ) D= Gate Pulse Width Gate Pulse Period 10V IFM, Body Diode Forward Current ISD (DUT) di/dt IRM Body Diode Reverse Current VDS (DUT) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 6 QW-R502-594.G 12N80 TYPICAL CHARACTERISTICS Drain Current, ID (µA) 300 Drain Current vs. Drain-Source Breakdown Voltage Drain Current vs. Gate Threshold Voltage 300 250 250 Drain Current, ID (µA) Power MOSFET 200 150 100 50 200 150 100 50 0 0 0 0.7 1.4 3.5 4.2 2.1 2.8 Gate Threshold Voltage, VTH (V) Drain Current, ID (A) Drain Current, ID (A) 0 200 600 800 1000 400 Drain-Source Breakdown Voltage, BVDSS (V) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R502-594.G