UNISONIC TECHNOLOGIES CO., LTD 11N90 Power MOSFET 11 Amps, 900 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 11N90 is an N-channel enhancement mode Power FET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode. The UTC 11N90 is universally applied in high efficiency switch mode power supply, FEATURES * RDS(on) < 1.1Ω @ VGS = 10V, ID = 5.5A * High switching speed * Improved dv/dt capability * 100% avalanche tested SYMBOL ORDERING INFORMATION Ordering Number Package Lead Free Halogen Free 11N90L-TA3-T 11N90G-TA3-T TO-220 11N90L-TF1-T 11N90G-TF1-T TO-220F1 11N90L-TF2-T 11N90G-TF2-T TO-220F2 TO-3P 11N90L-T3P-T 11N90G-T3P-T TO-3PN 11N90L-T3N-T 11N90G-T3N-T Note: Pin Assignment: G: Gate D: Drain S: Source 11N90L-TA3-T Pin Assignment 1 2 3 G D S G D S G D S G D S G D S Packing Tube Tube Tube Tube Tube (1) T: Tube (1) Packing Type (2) Package Type (3) Green Package www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd (2) TA3: TO-220, TF1: TO-220F1, TF2: TO-220F2 T3P: TO-3P, T3N: TO-3PN (3) L: Lead Free, G: Halogen Free and Lead Free 1 of 7 QW-R502-497.E 11N90 Power MOSFET MARKING UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 7 QW-R502-497.E 11N90 Power MOSFET ABSOLUTE MAXIMUM RATINGS(TC=25°C, unless otherwise specified) PARAMETER RATINGS UNIT 900 V ±30 V Continuous 11 A Drain Current Pulsed (Note 1) 44 A Avalanche Energy Single Pulsed (Note 2) 1000 mJ Peak Diode Recovery dv/dt (Note 3) 4.0 V/ns TO-220 160 W Power Dissipation TO-220F1/TO-220F2 PD 50 W TO-3P/TO-3PN 215 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55~+150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. Drain-Source Voltage Gate-Source Voltage SYMBOL VDSS VGSS ID IDM EAS dv/dt THERMAL CHARACTERISTICS Junction to Ambient Junction to Case PARAMETER TO-220/TO-220F1 TO-220F2 TO-3P/TO-3PN TO-220 TO-220F1/TO-220F2 TO-3P/TO-3PN UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw SYMBOL θJA θJC RATINGS UNIT 62.5 °C/W 40 0.78 2.48 0.58 °C/W °C/W °C/W °C/W 3 of 7 QW-R502-497.E 11N90 Power MOSFET ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise noted) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain-Source Leakage Current Gate- Source Leakage Current SYMBOL BVDSS ID=250µA, VGS=0V IGSS UNISONIC TECHNOLOGIES CO., LTD TYP MAX UNIT 900 V 1.0 VDS=900V, VGS=0V VDS=720V, TC=125°C VGS=+30V, VDS=0V VGS=-30V, VDS=0V ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=5.5A DYNAMIC PARAMETERS Input Capacitance CISS Output Capacitance COSS VGS=0V, VDS=25V, f=1.0MHz Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Total Gate Charge QG VGS=10V, VDS=50V, ID=1.3A Gate to Source Charge QGS (Note 4, 5) Gate to Drain Charge QGD Turn-ON Delay Time tD(ON) Rise Time tR VDD=30V, ID=0.5A, RG=25Ω (Note 4, 5) Turn-OFF Delay Time tD(OFF) Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS Maximum Body-Diode Pulsed Current ISM (Note1) Drain-Source Diode Forward Voltage VSD IS=11A, VGS=0V (Note 4) Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. L = 15mH, IAS = 11A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 11.0A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature www.unisonic.com.tw MIN △BVDSS/△TJ ID=250µA, Referenced to 25°C IDSS Forward Reverse TEST CONDITIONS V/°C 10 100 100 -100 3.0 µA nA nA 0.91 5.0 1.1 V Ω 980 170 18 1380 280 25 pF pF pF 60 14 22 125 260 340 220 80 140 320 380 270 nC nC nC ns ns ns ns 11 A 44 A 1.4 V 4 of 7 QW-R502-497.E 11N90 Power MOSFET TEST CIRCUITS AND WAVEFORMS Gate Charge Test Circuit Gate Charge Waveforms VGS Same Type as DUT 12V QG 10V 200nF 50kΩ VDS 300nF QGS QGD VGS DUT 3mA Charge Unclamped Inductive Switching Waveforms Unclamped Inductive Switching Test Circuit 2 EAS= 1 2 LIAS VDS RG BVDSS BVDSS-VDD BVDSS ID L IAS 10V ID(t) DUT tP VDD VDD VDS(t) tP UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Time 5 of 7 QW-R502-497.E 11N90 Power MOSFET TEST CIRCUITS AND WAVEFORMS Peak Diode Recovery dv/dt Test Circuit & Waveforms + DUT VDS RG L ISD VGS VDD Driver Same Type as DUT dv/dt controlled by RG ISD controlled by pulse period VGS (Driver ) D= Gate Pulse Width Gate Pulse Period 10V IFM, Body Diode Forward Current ISD (DUT) di/dt IRM Body Diode Reverse Current VDS (DUT) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 7 QW-R502-497.E 11N90 Power MOSFET TYPICAL CHARACTERISTICS Drain Current vs. Drain-Source Breakdown Voltage 250 250 Drain Current, ID (µA) Drain Current, ID (µA) 300 Drain Current vs. Gate Threshold Voltage 300 200 150 100 200 150 100 50 50 0 0 0 0 300 600 900 1200 Drain-Source Breakdown Voltage, BVDSS (V) VGS=10V, ID=5.5A 4 3 2 1 0 0 1 2 3 4 5 6 Drain to Source Voltage, VDS (V) Body-Diode Continuous Current, IS (A) Drain Current, ID (A) 5 6 Body-Diode Continuous Current vs. Source to Drain Voltage Drain-Source On-State Resistance Characteristics 6 1 2 3 4 5 Gate Threshold Voltage, VTH (V) 25 20 15 10 5 0 0 0.2 0.4 0.6 0.8 1.0 Source to Drain Voltage, VSD (V) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 7 of 7 QW-R502-497.E