UNISONIC TECHNOLOGIES CO., LTD 2N80 Power MOSFET 2.4A, 800V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N80 is an N-channel mode power MOSFET using UTC’s advanced technology to provide costumers planar stripe and DMOS technology. This technology is specialized in allowing a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode. The UTC 2N80 is universally applied in high efficiency switch mode power supply. FEATURES * RDS(on) < 6.3Ω @ VGS=10V, ID=1.2A * High switching speed SYMBOL ORDERING INFORMATION Ordering Number Lead Free Halogen Free 2N80L-TA3-T 2N80G-TA3-T 2N80L-TF1-T 2N80G-TF1-T 2N80L-TF2-T 2N80G-TF2-T 2N80L-TF3-T 2N80G-TF3-T 2N80L-TM3-R 2N80G-TM3-R 2N80L-TN3-R 2N80G-TN3-R 2N80L-TND-R 2N80G-TND-R Note: Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw Copyright © 2016 Unisonic Technologies Co., Ltd Package TO-220 TO-220F1 TO-220F2 TO-220F TO-251 TO-252 TO-252D Pin Assignment 1 2 3 G D S G D S G D S G D S G D S G D S G D S Packing Tube Tube Tube Tube Tube Tape Reel Tape Reel 1 of 7 QW-R502-480.F 2N80 Power MOSFET MARKING UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 7 QW-R502-480.F 2N80 Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 800 V Gate-Source Voltage VGSS ±30 V Avalanche Current (Note 2) IAR 2.4 A Continuous ID 2.4 A Drain Current 9.6 A Pulsed (Note 2) IDM Single Pulsed (Note 3) EAS 180 mJ Avalanche Energy 8.5 mJ Repetitive (Note 2) EAR Peak Diode Recovery dv/dt (Note 4) dv/dt 4.0 V/ns TO-220 85 TO-220F/TO-220F1 24 Power Dissipation PD W TO-220F2 TO-251/TO-252 43 TO-252D Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating: Pulse width limited by maximum junction temperature 3. L = 59mH, IAS = 2.4A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 4. ISD ≤ 2.4A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C THERMAL DATA PARAMETER TO-220/ TO-220F TO-220F1/TO-220F2 Junction to Ambient TO-251/TO-252 TO-252D TO-220 TO-220F/TO-220F1 Junction to Case TO-220F2 TO-251/TO-252 TO-252D SYMBOL UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw RATINGS UNIT 62.5 θJA °C/W 110 1.47 θJC 5.2 °C/W 2.85 3 of 7 QW-R502-480.F 2N80 Power MOSFET ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain-Source Leakage Current Gate- Source Leakage Current SYMBOL BVDSS △BVDSS/△TJ IDSS Forward Reverse IGSS TEST CONDITIONS ID=250µA, VGS=0V Reference to 25°C, ID=250µA VDS=800V, VGS=0V VDS=640V, TC=125°C VGS=+30V, VDS=0V VGS=-30V, VDS=0V ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=1.2A Forward Transconductance (Note 1) gFS VDS=50V, ID=1.2A DYNAMIC PARAMETERS Input Capacitance CISS VGS=0V, VDS=25V, Output Capacitance COSS f=1.0MHz Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Turn-ON Delay Time tD(ON) VGS=10V VDD=30V, Rise Time tR ID=0.5A, RG=25Ω Turn-OFF Delay Time tD(OFF) (Note 1,2) Fall-Time tF Total Gate Charge QG VGS=10V, VDS=50V, ID=1.3A, IG=100µA Gate to Source Charge QGS (Note 1,2) Gate to Drain Charge QGD SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Continuous Drain-Source Diode IS Forward Current Maximum Pulsed Drain-Source Diode ISM Forward Current Drain-Source Diode Forward Voltage VSD IS=2.4A, VGS=0V Reverse Recovery Time (Note 1) tRR IS=2.4A, VGS=0V, dIF/dt=100A/µs Reverse Recovery Charge (Note 1) QRR Notes: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2% 2. Essentially independent of operating temperature UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 800 V 0.9 V/°C 10 100 +100 -100 3.0 4.8 2.65 550 45 7 50 60 80 40 18 6 5 480 2.0 µA nA nA 5.0 6.3 V Ω S 650 60 9 pF pF pF 28 ns ns ns ns nC nC nC 2.4 A 9.6 A 1.4 V ns µC 4 of 7 QW-R502-480.F 2N80 Power MOSFET TEST CIRCUITS AND WAVEFORMS + DUT VDS RG L ISD VGS VDD Driver Same Type as DUT dv/dt controlled by RG ISD controlled by pulse period Peak Diode Recovery dv/dt Test Circuit & Waveforms VGS (Driver ) D= Gate Pulse Width Gate Pulse Period 10V IFM, Body Diode Forward Current ISD (DUT) di/dt IRM Body Diode Reverse Current VDS (DUT) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 7 QW-R502-480.F 2N80 Power MOSFET TEST CIRCUITS AND WAVEFORMS(Cont.) VGS Same Type as DUT 12V QG 10V 200nF 50kΩ VDS 300nF QGS QGD VGS DUT 3mA Charge Gate Charge Test Circuit Gate Charge Waveforms Resistive Switching Test Circuit Resistive Switching Waveforms 2 EAS= 1 2 LIAS VDS RG BVDSS BVDSS-VDD BVDSS ID L IAS 10V ID(t) DUT tP VDD VDD VDS(t) tP Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Time Unclamped Inductive Switching Waveforms 6 of 7 QW-R502-480.F 2N80 Power MOSFET TYPICAL CHARACTERISTICS Drain Current, ID (A) Drain Current, ID (µA) Drain Current, ID (µA) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 7 of 7 QW-R502-480.F