Datasheet

UNISONIC TECHNOLOGIES CO., LTD
2N90
Power MOSFET
2A, 900V N-CHANNEL
POWER MOSFET

DESCRIPTION
The UTC 2N90 is an N-channel mode power MOSFET
using UTC’s advanced technology to provide costumers with
planar stripe and DMOS technology. This technology
specialized in allowing a minimum on-state resistance and
superior switching performance. It also can withstand high
energy pulse in the avalanche and commutation mode.
The UTC 2N90 is universally applied in high efficiency
switch mode power supply.

FEATURES
* RDS(ON) < 7.2Ω @ VGS=10V, ID=1.1A
* High switching speed
* Improved dv/dt capability
* 100% avalanche tested

SYMBOL

ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
2N90L-TA3-T
2N90G-TA3-T
2N90L-TF3-T
2N90G-TF3-T
2N90L-TM3-T
2N90G-TM3-T
2N90L-TN3-R
2N90G-TN3-R
2N90L-TND-R
2N90G-TND-R
Note: Pin Assignment: G: Gate
D: Drain
S: Source
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Copyright © 2014 Unisonic Technologies Co., Ltd
Package
TO-220
TO-220F
TO-251
TO-252
TO-252D
1
G
G
G
G
G
Pin Assignment
2
3
D
S
D
S
D
S
D
S
D
S
Packing
Tube
Tube
Tube
Tape Reel
Tape Reel
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QW-R502-478.E
2N90

Power MOSFET
MARKING
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2N90

Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage (Note 2)
VDSS
900
V
Gate-Source Voltage
VGSS
±30
V
Continuous
ID
2.2
A
Drain Current
Pulsed (Note 2)
IDM
8.8
A
Avalanche Current (Note 2)
IAR
2.2
A
170
mJ
Single Pulsed (Note 3)
EAS
Avalanche Energy
Repetitive (Note 2)
EAR
8.5
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.0
V/ns
TO-220
85
TO-220F
25
Power Dissipation
PD
W
TO-251/ TO-252
43
TO-252D
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L = 65mH, IAS = 2.2A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
4. ISD ≤ 2.2A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C

THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
PACKAGE
TO-220/TO-220F
TO-251/ TO-252
TO-252D
TO-220
TO-220F
TO-251/ TO-252
TO-252D
SYMBOL
UNISONIC TECHNOLOGIES CO., LTD
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θJA
θJC
RATINGS
62.5
110
1.47
5
UNIT
°C/W
°C/W
2.85
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Power MOSFET
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Drain-Source Leakage Current
Gate- Source Leakage Current
Forward
Reverse
SYMBOL
TEST CONDITIONS
BVDSS
ID=250µA, VGS=0V
△BVDSS/△TJ Reference to 25°C, ID=250µA
VDS=900V, VGS=0V
IDSS
VDS=720V, TC=125°C
VGS=+30V, VDS=0V
IGSS
VGS=-30V, VDS=0V
MIN TYP MAX UNIT
900
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250µA
3.0
Static Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=1.1A
Forward Transconductance
gFS
VDS=50V, ID=1.1A (Note 1)
DYNAMIC PARAMETERS
Input Capacitance
CISS
VGS=0V, VDS=25V, f=1.0MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Turn-ON Delay Time
tD(ON)
VGS=10V, VDD=30V, ID=0.5A,
Rise Time
tR
RG=25Ω
Turn-OFF Delay Time
tD(OFF)
(Note 1,2)
Fall-Time
tF
Total Gate Charge
QG
VGS=10V, VDS=50V, ID=1.3A
Gate to Source Charge
QGS
IG=100µA (Note 1,2)
Gate to Drain Charge
QGD
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Continuous Drain-Source Diode
IS
Forward Current
Maximum Pulsed Drain-Source Diode
ISM
Forward Current
Drain-Source Diode Forward Voltage
VSD
IS=2.2A, VGS=0V
Reverse Recovery Time
trr
IS=2.2A,VGS=0V,dIF/dt=100A/µ
s (Note 1)
Reverse Recovery Charge
QRR
Notes: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%
2. Essentially independent of operating temperature
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
V
V/°C
1.0
10
µA
100
+100 nA
-100 nA
5.6
2.0
480
45
7
50
65
90
45
16
5.5
4.5
400
1.6
5.0
7.2
V
Ω
S
520
pF
pF
pF
26
ns
ns
ns
ns
nC
nC
nC
2.2
A
8.8
A
1.4
V
ns
µC
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Power MOSFET
TEST CIRCUITS AND WAVEFORMS
D.U.T.
+
VDS
-
+
-
L
RG
Driver
VGS
VDD
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Same Type
as D.U.T.
Peak Diode Recovery dv/dt Test Circuit
VGS
(Driver)
Period
D=
P.W.
P. W.
Period
VGS= 10V
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(D.U.T.)
VDD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
VDS
90%
VGS
10%
tD(ON)
tD(OFF)
tF
tR
Switching Test Circuit
Switching Waveforms
VGS
QG
10V
QGS
QGD
Charge
Gate Charge Test Circuit
Gate Charge Waveform
BVDSS
IAS
ID(t)
VDS(t)
VDD
tp
Unclamped Inductive Switching Test Circuit
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Time
Unclamped Inductive Switching Waveforms
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Power MOSFET
TYPICAL CHARACTERISTICS
Drain Current, ID (A)
Drain Current, ID (A)
Drain Current, ID (µA)
Drain Current, ID (µA)

UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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www.unisonic.com.tw
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