High Voltage MOSFET IXTA 2N80 IXTP 2N80 VDSS ID25 RDS(on) N-Channel Enhancement Mode Avalanche Energy Rated = 800 V = 2 A = 6.2 Ω Preliminary Data Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 800 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 800 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C 2 A IDM TC = 25°C, pulse width limited by TJM 8 A 2 A IAR EAR TC = 25°C 6 mJ EAS TC = 25°C 200 mJ dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 18 Ω PD TC = 25°C 5 V/ns 54 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C TJ Md Mounting torque 1.13/10 Nm/lb.in. Weight 4 Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s g °C 300 TO-220AB (IXTP) GD D (TAB) S TO-263 AA (IXTA) G G = Gate, S = Source, S D (TAB) D = Drain, TAB = Drain Features y International standard packages y Low RDS (on) HDMOSTM process y Rugged polysilicon gate cell structure y Low package inductance (< 5 nH) - easy to drive and to protect Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. VDSS VGS = 0 V, ID = 250 µA 800 VGS(th) VDS = VGS, ID = 250 µA 2.5 IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % © 2003 IXYS All rights reserved TJ = 125°C V 5.5 V y Fast switching times Applications y Switch-mode and resonant-mode power supplies ±100 nA y Flyback inverters y DC choppers 25 500 µA µA Advantages 6.2 Ω y Space savings y High power density 98541B(01/03) IXTA 2N80 IXTP 2N80 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs VDS = 20 V; ID = 0.5 • ID25, pulse test 1.0 2.0 S 440 pF 56 pF Crss 15 pF td(on) 15 ns Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz tr VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 ID25 18 ns td(off) RG 30 ns tf 15 ns Qg(on) 22 nC 5.5 nC 12 nC Qgs = 18Ω, (External) VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 ID25 Qgd RthJC 2.3 RthCK (IXTP) Source-Drain Diode 0.5 TO-220 AD Dimensions Pins: 1 - Gate 3 - Source 2 - Drain 4 - Drain Bottom Side K/W K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol Test Conditions IS VGS = 0 V 2 A ISM Repetitive; pulse width limited by TJM 8 A VSD IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 1.8 V t rr IF = IS, -di/dt = 100 A/µs, VR = 100 V 510 TO-263 AA Outline ns 1. 2. 3. 4. Gate Drain Source Drain Bottom Side Dim. Millimeter Min. Max. Inches Min. Max. A A1 4.06 2.03 4.83 2.79 .160 .080 .190 .110 b b2 0.51 1.14 0.99 1.40 .020 .045 .039 .055 c c2 0.46 1.14 0.74 1.40 .018 .045 .029 .055 D D1 8.64 7.11 9.65 8.13 .340 .280 .380 .320 E E1 e 9.65 6.86 2.54 10.29 8.13 BSC .380 .270 .100 .405 .320 BSC L L1 L2 L3 L4 14.61 2.29 1.02 1.27 0 15.88 2.79 1.40 1.78 0.38 .575 .090 .040 .050 0 .625 .110 .055 .070 .015 R 0.46 0.74 .018 .029 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1