RMB2S, RMB4S www.vishay.com Vishay General Semiconductor Miniature Glass Passivated Fast Recovery Surface Mount Bridge Rectifier FEATURES • UL recognition, file number E54214 ~ • Saves space on printed circuit boards ~ • Ideal for automated placement • Fast recovery, low switching loss • High surge current capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C ~ • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 ~ TYPICAL APPLICATIONS General purpose use in AC/DC bridge full wave rectification for power supply, lighting ballaster, battery charger, home appliances, office equipment, and telecommunication applications. TO-269AA (MBS) PRIMARY CHARACTERISTICS IF(AV) 0.5 A VRRM 200 V, 400 V IFSM 30 A trr 150 ns VF at IF = 0.4 A 1.25 V TJ max. 150 °C Package TO-269AA (MBS) Diode variations Quad MECHANICAL DATA Case: TO-269AA (MBS) Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Terminals: Matte tin plated leads, solderable J-STD-002 and JESD22-B102 E3 suffix meets JESD 201 class 1A whisker test per Polarity: As marked on body MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Device marking code RMB2S RMB4S 2R 4R UNIT Maximum repetitive peak reverse voltage VRRM 200 400 V Maximum RMS voltage VRMS 140 280 V VDC 200 400 V Maximum DC blocking voltage Maximum average forward output rectified current at TA = 30 °C on glass-epoxy PCB (1) on aluminum substrate (2) Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load Rating for fusing (t < 8.3 ms) Operating junction and storage temperature range IF(AV) 0.5 0.8 A IFSM 30 A I2t 5.0 A2s TJ, TSTG - 55 to + 150 °C Notes (1) On glass epoxy PCB mounted on 0.05" x 0.05" (1.3 mm x 1.3 mm) pads (2) On aluminum substrate PCB with an area of 0.8" x 0.8" (20 mm x 20 mm) mounted on 0.05" x 0.05" (1.3 mm x 1.3 mm) solder pad Revision: 19-Aug-13 Document Number: 88705 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 RMB2S, RMB4S www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS Maximum instantaneous forward voltage per diode IF = 0.4 A Maximum DC reverse current at rated DC blocking voltage per diode SYMBOL RMB2S VF TA = 25 °C UNIT 1.25 V 5.0 IR TA = 125 °C RMB4S μA 100 Maximum reverse recovery time per diode IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A trr 150 ns Typical junction capacitance per diode 4.0 V, 1 MHz CJ 13 pF THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Typical thermal resistance (1) RMB2S RMB4S RJA (1) 85 RJA (2) 70 RJL (1) 20 UNIT °C/W Notes (1) On glass epoxy PCB mounted on 0.05" x 0.05" (1.3 mm x 1.3 mm) pads (2) On aluminum substrate PCB with an area of 0.8" x 0.8" (20 mm x 20 mm) mounted on 0.05" x 0.05" (1.3 mm x 1.3 mm) solder pad ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE RMB4S-E3/45 0.22 45 100 Tube RMB4S-E3/80 0.22 80 3000 13" diameter paper tape and reel RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 35 Peak Forward Surge Current (A) Average Forward Rectified Current (A) 0.8 0.7 Aluminum Substrate 0.6 0.5 0.4 Glass Epoxy PCB 0.3 0.2 0.1 Resistive or Inductive Load TA = 40 °C Single Half Sine-Wave 30 25 20 f = 60 Hz f = 50 Hz 15 10 5 1.0 Cycle 0 0 0 20 40 60 80 100 120 140 160 1 10 100 Ambient Temperature (°C) Number of Cycles Fig. 1 - Maximum Forward Current Derating Curve Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Per Diode Revision: 19-Aug-13 Document Number: 88705 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 RMB2S, RMB4S www.vishay.com Vishay General Semiconductor 30 Pulse Width = 300 µs 1 % Duty Cycle Junction Capacitance (pF) Instantaneous Forward Current (A) 10 TJ = 150 °C 1 TJ = 25 °C 0.1 0.01 0.3 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 25 20 15 10 5 0 0.5 0.7 0.9 1.1 1.3 0.1 1.5 1 10 100 1000 Instantaneous Forward Voltage (V) Reverse Voltage (V) Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode Fig. 5 - Typical Junction Capacitance Per Diode Instantaneous Reverse Leakage Current (µA) 100 TJ = 125 °C 10 1 0.1 TJ = 25 °C 0.01 0 20 40 60 80 100 Percent of Rated Peak Reverse Voltage (%) Fig. 4 - Typical Reverse Leakage Characteristics Per Diode PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-269AA (MBS) 0.029 (0.74) 0.017 (0.43) Mounting Pad Layout 0.023 MIN. (0.58 MIN.) 0.161 (4.10) 0.144 (3.65) 0.272 (6.90) 0.252 (6.40) 0.272 MAX. (6.91 MAX.) 0.030 MIN. (0.76 MIN.) 0.105 (2.67) 0.095 (2.41) 0.195 (4.95) 0.179 (4.55) 0 to 8° 0.205 (5.21) 0.195 (4.95) 0.049 (1.24) 0.039 (0.99) 0.062 (1.57) 0.058 (1.47) 0.106 (2.70) 0.090 (2.30) 0.114 (2.90) 0.094 (2.40) Revision: 19-Aug-13 0.0075 (0.19) 0.0065 (0.16) 0.038 (0.96) 0.019 (0.48) 0.008 (0.20) 0.004 (0.10) 0.114 (2.90) 0.110 (2.80) 0.058 (1.47) 0.054 (1.37) 0.105 (2.67) 0.095 (2.41) 0.016 (0.41) 0.006 (0.15) 0.018 (0.46) 0.014 (0.36) Document Number: 88705 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000