I2P AK BUK9E3R2-40B N-channel TrenchMOS logic level FET 13 March 2014 Product data sheet 1. General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 2. Features and benefits • • • • AEC Q101 compliant Low conduction losses due to low on-state resistance Suitable for logic level gate drive sources Suitable for thermally demanding environments due to 175 °C rating 3. Applications • • • • 12 V loads Automotive systems General purpose power switching Motors, lamps and solenoids 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - - 40 V ID drain current VGS = 5 V; Tmb = 25 °C; Fig. 3; Fig. 2 - - 100 A Ptot total power dissipation Tmb = 25 °C; Fig. 1 - - 300 W VGS = 10 V; ID = 25 A; Tj = 25 °C - 2.4 2.8 mΩ VGS = 5 V; ID = 25 A; Tj = 25 °C; - 2.7 3.2 mΩ - 37 - nC [1] Static characteristics RDSon drain-source on-state resistance Fig. 11; Fig. 12 Dynamic characteristics QGD gate-drain charge VGS = 5 V; ID = 25 A; VDS = 32 V; Tj = 25 °C; Fig. 13 Scan or click this QR code to view the latest information for this product BUK9E3R2-40B NXP Semiconductors N-channel TrenchMOS logic level FET Symbol Parameter Conditions Min Typ Max Unit ID = 100 A; Vsup ≤ 40 V; RGS = 50 Ω; - - 1.2 J Avalanche ruugedness EDS(AL)S non-repetitive drainsource avalanche energy [1] VGS = 5 V; Tj(init) = 25 °C; unclamped All individual parts of device must be ≤ 175 °C to achieve maximum current rating. 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline 1 G gate 2 D drain 3 S source mb D mounting base; connected to drain Graphic symbol D mb G mbb076 S 1 2 3 I2PAK (SOT226) 6. Ordering information Table 3. Ordering information Type number Package BUK9E3R2-40B Name Description Version I2PAK plastic single-ended package (I2PAK); TO-262 SOT226 7. Marking Table 4. Marking codes Type number Marking code BUK9E3R2-40B BUK9E3R2-40B 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - 40 V VDGR drain-gate voltage RGS = 20 kΩ - 40 V BUK9E3R2-40B Product data sheet All information provided in this document is subject to legal disclaimers. 13 March 2014 © NXP Semiconductors N.V. 2014. All rights reserved 2 / 13 BUK9E3R2-40B NXP Semiconductors N-channel TrenchMOS logic level FET Symbol Parameter Conditions Min Max Unit VGS gate-source voltage -15 15 V Ptot total power dissipation Tmb = 25 °C; Fig. 1 - 300 W ID drain current Tmb = 25 °C; VGS = 5 V; Fig. 2; Fig. 3 [1] - 222 A Tmb = 100 °C; VGS = 5 V; Fig. 2 [2] - 100 A Tmb = 25 °C; VGS = 5 V; Fig. 3; Fig. 2 [2] - 100 A - 888 A IDM peak drain current Tmb = 25 °C; pulsed; tp ≤ 10 µs; Fig. 3 Tstg storage temperature -55 175 °C Tj junction temperature -55 175 °C [1] - 222 A [2] - 100 A pulsed; tp ≤ 10 µs; Tmb = 25 °C - 888 A ID = 100 A; Vsup ≤ 40 V; RGS = 50 Ω; - 1.2 J Source-drain diode IS source current ISM Tmb = 25 °C peak source current Avalanche ruugedness EDS(AL)S non-repetitive drain-source avalanche energy [1] [2] VGS = 5 V; Tj(init) = 25 °C; unclamped Current is limited by power dissipation chip rating. All individual parts of device must be ≤ 175 °C to achieve maximum current rating. 03na19 120 03nh38 250 ID (A) Pder (%) 200 80 150 100 40 Capped at 100 A due to package 50 0 Fig. 1. 0 50 100 150 Tmb (°C) Normalized total power dissipation as a function of mounting base temperature BUK9E3R2-40B Product data sheet 0 200 Fig. 2. 0 50 150 Tmb (°C) 200 Continuous drain current as a function of mounting base temperature All information provided in this document is subject to legal disclaimers. 13 March 2014 100 © NXP Semiconductors N.V. 2014. All rights reserved 3 / 13 BUK9E3R2-40B NXP Semiconductors N-channel TrenchMOS logic level FET 03nh36 104 ID (A) 103 Limit RDSon = VDS / ID tp = 10 µs 100 µs 102 1 ms Capped at 100 A due to package DC 10 ms 10 100 ms 1 10- 1 Fig. 3. 1 10 102 VDS (V) Safe operating area; continuous and peak drain currents as a function of drain-source voltage 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-mb) thermal resistance from junction to mounting base Fig. 4 - - 0.5 K/W Rth(j-a) thermal resistance from junction to ambient vertical in still air - 60 - K/W 03nh37 1 Zth(j-mb) (K/W) 10- 1 δ = 0.5 0.2 0.1 0.05 0.02 P 10- 2 single shot 10- 3 10- 6 Fig. 4. δ= tp 10- 5 10- 4 10- 3 10- 2 tp T t T 10- 1 tp (s) 1 Transient thermal impedance from junction to mounting base as a function of pulse duration BUK9E3R2-40B Product data sheet All information provided in this document is subject to legal disclaimers. 13 March 2014 © NXP Semiconductors N.V. 2014. All rights reserved 4 / 13 BUK9E3R2-40B NXP Semiconductors N-channel TrenchMOS logic level FET 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit drain-source breakdown voltage ID = 0.25 mA; VGS = 0 V; Tj = -55 °C 36 - - V ID = 0.25 mA; VGS = 0 V; Tj = 25 °C 40 - - V gate-source threshold voltage ID = 1 mA; VDS = VGS; Tj = 25 °C; 1.1 1.5 2 V 0.5 - - V - - 2.3 V VDS = 40 V; VGS = 0 V; Tj = 25 °C - 0.02 1 µA VDS = 40 V; VGS = 0 V; Tj = 175 °C - - 500 µA VGS = 15 V; VDS = 0 V; Tj = 25 °C - 2 100 nA VGS = -15 V; VDS = 0 V; Tj = 25 °C - 2 100 nA VGS = 10 V; ID = 25 A; Tj = 25 °C - 2.4 2.8 mΩ VGS = 4.5 V; ID = 25 A; Tj = 25 °C - - 3.5 mΩ VGS = 5 V; ID = 25 A; Tj = 175 °C; - - 6 mΩ - 2.7 3.2 mΩ Static characteristics V(BR)DSS VGS(th) Fig. 10 ID = 1 mA; VDS = VGS; Tj = 175 °C; Fig. 10 ID = 1 mA; VDS = VGS; Tj = -55 °C; Fig. 10 IDSS IGSS RDSon drain leakage current gate leakage current drain-source on-state resistance Fig. 11; Fig. 12 VGS = 5 V; ID = 25 A; Tj = 25 °C; Fig. 11; Fig. 12 Dynamic characteristics QG(tot) total gate charge ID = 25 A; VDS = 32 V; VGS = 5 V; - 94 - nC QGS gate-source charge Tj = 25 °C; Fig. 13 - 17 - nC QGD gate-drain charge - 37 - nC Ciss input capacitance VGS = 0 V; VDS = 25 V; f = 1 MHz; - 7877 10502 pF Coss output capacitance Tj = 25 °C; Fig. 14 - 1397 1676 pF Crss reverse transfer capacitance - 608 833 pF td(on) turn-on delay time VDS = 30 V; RL = 1.2 Ω; VGS = 5 V; - 68 - ns tr rise time RG(ext) = 10 Ω; Tj = 25 °C - 268 - ns td(off) turn-off delay time - 257 - ns tf fall time - 192 - ns LD internal drain inductance - 4.5 - nH BUK9E3R2-40B Product data sheet from drain lead 6 mm from package to center of die; Tj = 25 °C All information provided in this document is subject to legal disclaimers. 13 March 2014 © NXP Semiconductors N.V. 2014. All rights reserved 5 / 13 BUK9E3R2-40B NXP Semiconductors N-channel TrenchMOS logic level FET Symbol Parameter LS internal source inductance Conditions Min Typ Max Unit from upper edge of drain mounting base to center of die; Tj = 25 °C - 2.5 - nH from source lead to source bond pad; Tj = 25 °C - 7.5 - nH Source-drain diode VSD source-drain voltage IS = 40 A; VGS = 0 V; Tj = 25 °C; Fig. 15 - 0.85 1.2 V trr reverse recovery time IS = 20 A; dIS/dt = -100 A/µs; - 70 - ns recovered charge VGS = -10 V; VDS = 20 V; Tj = 25 °C - 127 - nC Qr 350 ID (A) 03nh56 10 5 4 3.8 280 03nh55 5 Label is VGS (V) RDSon (mΩ) 3.6 4 3.4 210 3.2 140 3 3 2.8 70 2.6 0 Fig. 5. 2.4 2.2 0 2 4 6 8 VDS (V) 2 10 Output characteristics: drain current as a Fig. 6. function of drain-source voltage; typical values BUK9E3R2-40B Product data sheet 3 11 VGS (V) 15 Drain-source on-state resistance as a function of gate-source voltage; typical values All information provided in this document is subject to legal disclaimers. 13 March 2014 7 © NXP Semiconductors N.V. 2014. All rights reserved 6 / 13 BUK9E3R2-40B NXP Semiconductors N-channel TrenchMOS logic level FET 03ng53 10- 1 03nh53 200 ID (A) gfs (S) 10- 2 150 min 10- 3 typ max 100 10- 4 50 10- 5 10- 6 Fig. 7. 0 1 2 VGS (V) 0 3 Sub-threshold drain current as a function of gate-source voltage Fig. 8. 03nh54 100 0 20 40 ID (A) 60 Forward transconductance as a function of drain current; typical values 03ng52 2.5 VGS(th) (V) ID (A) 2.0 75 max 1.5 typ 50 min 1.0 25 0 Fig. 9. 0.5 Tj = 175 °C Tj = 25 °C 0 1 2 VGS (V) 0 - 60 3 Transfer characteristics: drain current as a function of gate-source voltage; typical values BUK9E3R2-40B Product data sheet 0 60 120 Tj (°C) 180 Fig. 10. Gate-source threshold voltage as a function of junction temperature All information provided in this document is subject to legal disclaimers. 13 March 2014 © NXP Semiconductors N.V. 2014. All rights reserved 7 / 13 BUK9E3R2-40B NXP Semiconductors N-channel TrenchMOS logic level FET 03nh57 8 2.8 3 RDSon (mΩ) 03aa27 2 Label is VGS (V) a 3.2 1.5 3.4 6 3.6 1 3.8 4 4 5 0.5 10 2 0 70 140 210 280 ID (A) 0 - 60 350 Fig. 11. Drain-source on-state resistance as a function of drain current; typical values 60 Tj (° C) 180 03nh58 12000 VGS (V) Ciss C (pF) 4 120 Fig. 12. Normalized drain-source on-state resistance factor as a function of junction temperature 03nh52 5 0 VDD = 14 V 8000 VDD = 32 V 3 Coss 2 4000 Crss 1 0 0 25 50 75 QG (nC) Fig. 13. Gate-source voltage as a function of gate charge; typical values BUK9E3R2-40B Product data sheet 0 10- 1 100 1 10 VDS (V) 102 Fig. 14. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values All information provided in this document is subject to legal disclaimers. 13 March 2014 © NXP Semiconductors N.V. 2014. All rights reserved 8 / 13 BUK9E3R2-40B NXP Semiconductors N-channel TrenchMOS logic level FET 03nh51 100 IS (A) 75 50 Tj = 175 °C Tj = 25 °C 25 0 0.0 0.2 0.4 0.6 0.8 1.0 VSD (V) Fig. 15. Source current as a function of source-drain voltage; typical values BUK9E3R2-40B Product data sheet All information provided in this document is subject to legal disclaimers. 13 March 2014 © NXP Semiconductors N.V. 2014. All rights reserved 9 / 13 BUK9E3R2-40B NXP Semiconductors N-channel TrenchMOS logic level FET 11. Package outline Plastic single-ended package (I2PAK); low-profile 3-lead TO-262 SOT226 A A1 E D1 mounting base D L1 Q b1 L 1 2 3 b e c e 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 b b1 c D max D1 E e L L1 Q mm 4.5 4.1 1.40 1.27 0.85 0.60 1.3 1.0 0.7 0.4 11 1.6 1.2 10.3 9.7 2.54 15.0 13.5 3.30 2.79 2.6 2.2 OUTLINE VERSION SOT226 REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 06-02-14 09-08-25 TO-262 Fig. 16. Package outline I2PAK (SOT226) BUK9E3R2-40B Product data sheet All information provided in this document is subject to legal disclaimers. 13 March 2014 © NXP Semiconductors N.V. 2014. All rights reserved 10 / 13 BUK9E3R2-40B NXP Semiconductors N-channel TrenchMOS logic level FET In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. 12. 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BUK9E3R2-40B Product data sheet Suitability for use in automotive applications — This NXP Semiconductors product has been qualified for use in automotive applications. Unless otherwise agreed in writing, the product is not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors and its suppliers accept no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 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NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. All information provided in this document is subject to legal disclaimers. 13 March 2014 © NXP Semiconductors N.V. 2014. All rights reserved 11 / 13 BUK9E3R2-40B NXP Semiconductors N-channel TrenchMOS logic level FET No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV, FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, ICODE, ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse, QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET, TrenchMOS, TriMedia and UCODE — are trademarks of NXP Semiconductors N.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. BUK9E3R2-40B Product data sheet All information provided in this document is subject to legal disclaimers. 13 March 2014 © NXP Semiconductors N.V. 2014. All rights reserved 12 / 13 BUK9E3R2-40B NXP Semiconductors N-channel TrenchMOS logic level FET 13. Contents 1 General description ............................................... 1 2 Features and benefits ............................................1 3 Applications ........................................................... 1 4 Quick reference data ............................................. 1 5 Pinning information ............................................... 2 6 Ordering information ............................................. 2 7 Marking ................................................................... 2 8 Limiting values .......................................................2 9 Thermal characteristics .........................................4 10 Characteristics ....................................................... 5 11 Package outline ................................................... 10 12 12.1 12.2 12.3 12.4 Legal information .................................................11 Data sheet status ............................................... 11 Definitions ...........................................................11 Disclaimers .........................................................11 Trademarks ........................................................ 12 © NXP Semiconductors N.V. 2014. All rights reserved For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 13 March 2014 BUK9E3R2-40B Product data sheet All information provided in this document is subject to legal disclaimers. 13 March 2014 © NXP Semiconductors N.V. 2014. All rights reserved 13 / 13