3 SO T2 PMBFJ308; PMBFJ309; PMBFJ310 N-channel silicon field-effect transistors Rev. 4 — 20 September 2011 Product data sheet 1. Product profile 1.1 General description Symmetrical N-channel silicon junction field-effect transistors in a SOT23 package. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features and benefits Low noise Interchangeability of drain and source connections High gain. 1.3 Applications AM input stage in car radios VHF amplifiers Oscillators and mixers. 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage VGSoff gate-source cut-off voltage Conditions Min Typ Max Unit - - 25 V PMBFJ308 VDS = 10 V; ID = 1 A 1 - 6.5 V PMBFJ309 VDS = 10 V; ID = 1 A 1 - 4 PMBFJ310 VDS = 10 V; ID = 1 A 2 - 6.5 V V PMBFJ308; PMBFJ309; PMBFJ310 NXP Semiconductors N-channel silicon field-effect transistors Table 1. Quick reference data …continued Symbol Parameter IDSS Conditions Min Typ Max Unit PMBFJ308 VGS = 0 V; VDS = 10 V 12 - 60 mA PMBFJ309 VGS = 0 V; VDS = 10 V 12 - 30 mA drain current VGS = 0 V; VDS = 10 V 24 - 60 mA Ptot total power dissipation up to Tamb = 25 C - - 250 mW yfs forward transfer admittance VDS = 10 V; ID = 10 mA 10 - - mS PMBFJ310 2. Pinning information Table 2. Discrete pinning[1] Pin Description 1 source 2 drain 3 gate Simplified outline 3 3 2 1 sym060 1 [1] Symbol 2 Drain and source are interchangeable. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PMBFJ308 - plastic surface mounted package; 3 leads SOT23 PMBFJ309 PMBFJ310 4. Marking Table 4. Marking Type number Marking code[1] PMBFJ308 48* PMBFJ309 49* PMBFJ310 50* [1] * = p: Made in Hong Kong. * = t: Made in Malaysia. * = W: Made in China. PMBFJ308_309_310 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 4 — 20 September 2011 © NXP B.V. 2011. All rights reserved. 2 of 15 PMBFJ308; PMBFJ309; PMBFJ310 NXP Semiconductors N-channel silicon field-effect transistors 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions VDS drain-source voltage (DC) Min Max Unit - 25 V VGSO gate-source voltage open drain - 25 V VGDO gate-drain voltage open source - 25 V IG forward gate current (DC) - 50 mA Ptot total power dissipation - 250 mW Tstg storage temperature 65 +150 C Tj junction temperature - 150 C up to Tamb = 25 C mbb688 400 Ptot (mW) 300 200 100 0 0 Fig 1. 50 100 150 200 Tamb (°C) Power derating curve. 6. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Rth(j-a) thermal resistance from junction to ambient [1] Conditions [1] Typ Unit 500 K/W Device mounted on an FR4 printed-circuit board. PMBFJ308_309_310 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 4 — 20 September 2011 © NXP B.V. 2011. All rights reserved. 3 of 15 NXP Semiconductors PMBFJ308; PMBFJ309; PMBFJ310 N-channel silicon field-effect transistors 7. Static characteristics Table 7. Static characteristics Tj = 25 C; unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit V(BR)GSS gate-source breakdown voltage IG = 1 A; VDS = 0 V 25 - - VGSoff gate-source cut-off voltage PMBFJ308 ID = 1 A; VDS = 10 V 1 - 6.5 V PMBFJ309 ID = 1 A; VDS = 10 V 1 - 4 PMBFJ310 ID = 1 A; VDS = 10 V 2 - 6.5 V IG = 1 mA; VDS = 0 V - - 1 V PMBFJ308 VGS = 0 V; VDS = 10 V 12 - 60 mA PMBFJ309 VGS = 0 V; VDS = 10 V 12 - 30 mA VGSS gate-source forward voltage IDSS drain-source leakage current V V V VGS = 0 V; VDS = 10 V 24 - 60 mA IGSS gate-source leakage current VGS = 15 V; VDS = 0 V - - 1 nA RDSon drain-source on-state resistance VGS = 0 V; VDS = 100 mV - 50 - yfs forward transfer admittance ID = 10 mA; VDS = 10 V 10 - - mS yos common source output admittance ID = 10 mA; VDS = 10 V - - 250 S Min Typ Max Unit - 3 5 PMBFJ310 8. Dynamic characteristics Table 8. Dynamic characteristics Tj = 25 C; unless otherwise specified. Symbol Parameter Conditions Ciss input capacitance VDS = 10 V VGS = 10 V; f = 1 MHz VGS = 0 V; Tamb = 25 C - 6 - pF - 1.3 2.5 pF f = 100 MHz - 200 - S f = 450 MHz - 3 - mS f = 100 MHz - 13 - mS f = 450 MHz - 12 - mS f = 100 MHz - 30 - S f = 450 MHz - 450 - S Crss reverse transfer capacitance VDS = 0 V; VGS = 10 V; f = 1 MHz gis input conductance VDS = 10 V; ID = 10 mA gfs grs gos Vn transfer conductance VDS = 10 V; ID = 10 mA reverse conductance VDS = 10 V; ID = 10 mA output conductance VDS = 10 V; ID = 10 mA equivalent input noise voltage PMBFJ308_309_310 Product data sheet pF f = 100 MHz - 150 - S f = 450 MHz - 400 - S - 6 - nV/Hz VDS = 10 V; ID = 10 mA; f = 100 Hz All information provided in this document is subject to legal disclaimers. Rev. 4 — 20 September 2011 © NXP B.V. 2011. All rights reserved. 4 of 15 PMBFJ308; PMBFJ309; PMBFJ310 NXP Semiconductors N-channel silicon field-effect transistors mcd220 50 IDSS (mA) 40 yfs (mS) 30 12 20 8 10 4 16 0 0 0 −1 −2 −3 VGSoff (V) 0 −4 VDS = 10 V; Tj = 25 C. Fig 2. mcd219 20 −2 −4 −6 −8 VGSoff (V) VDS = 10 V; ID = 10 mA; Tj = 25 C. Drain current as a function of gate-source cut-off voltage; typical values. Fig 3. Forward transfer admittance as a function of gate-source cut-off voltage; typical values. mcd221 150 mcd222 80 RDSon (Ω) gos (μS) 60 100 40 50 20 0 0 −1 −2 −3 0 −4 0 VGSoff (V) VDS = 10 V; ID = 10 mA; Tj = 25 C. Fig 4. Product data sheet −2 −3 −4 VGSoff (V) VDS = 100 mV; VGS = 0 V; Tj = 25 C. Common-source output conductance as a function of gate-source cut-off voltage; typical values. PMBFJ308_309_310 −1 Fig 5. Drain-source on-state resistance as a function of gate-source cut-off voltage; typical values. All information provided in this document is subject to legal disclaimers. Rev. 4 — 20 September 2011 © NXP B.V. 2011. All rights reserved. 5 of 15 PMBFJ308; PMBFJ309; PMBFJ310 NXP Semiconductors N-channel silicon field-effect transistors mcd216 16 ID (mA) mcd213 16 ID (mA) (1) 12 12 (2) 8 8 (3) 4 4 (4) (5) 0 0 0 4 8 12 16 VDS (V) Tj = 25 C. −2 −1.5 −1 −0.5 0 VGS (V) VDS = 10 V; Tj = 25 C. (1) VGS = 0 V. (2) VGS = 0.25 V. (3) VGS = 0.5 V. (4) VGS = 0.75 V. (5) VGS = 1 V. Fig 6. Typical output characteristics; PMBFJ308. Fig 7. mcd218 20 ID (mA) 16 mcd215 20 ID (mA) 16 (1) (2) 12 Typical transfer characteristics; PMBFJ308. 12 (3) 8 8 (4) 4 4 (5) 0 0 0 4 8 12 16 VDS (V) Tj = 25 C. −2 −1.5 −1 −0.5 0 VGS (V) VDS = 10 V; Tj = 25 C. (1) VGS = 0 V. (2) VGS = 0.25 V. (3) VGS = 0.5 V. (4) VGS = 0.75 V. (5) VGS = 1 V. Fig 8. Typical output characteristics; PMBFJ309. PMBFJ308_309_310 Product data sheet Fig 9. Typical transfer characteristics; PMBFJ309. All information provided in this document is subject to legal disclaimers. Rev. 4 — 20 September 2011 © NXP B.V. 2011. All rights reserved. 6 of 15 PMBFJ308; PMBFJ309; PMBFJ310 NXP Semiconductors N-channel silicon field-effect transistors mcd217 40 (1) mcd214 40 ID (mA) ID (mA) 30 30 (2) 20 (3) 20 (4) 10 10 (5) (6) 0 0 0 4 8 12 16 −4 −3 −2 −1 VDS (V) Tj = 25 C. 0 VGS (V) VDS = 10 V; Tj = 25 C. (1) VGS = 0 V. (2) VGS = 0.5 V. (3) VGS = 1 V. (4) VGS = 1.5 V. (5) VGS = 2 V. (6) VGS = 2.5 V. Fig 10. Typical output characteristics; PMBFJ310. mcd224 4 Crs (pF) Fig 11. Typical transfer characteristics; PMBFJ310. mcd223 10 Cis (pF) 8 3 6 2 4 1 2 0 −10 −8 −6 −4 −2 0 VGS (V) VDS = 10 V; Tj = 25 C. Product data sheet −8 −6 −4 −2 0 VGS (V) VDS = 10 V; Tj = 25 C. Fig 12. Reverse transfer capacitance as a function of gate-source voltage; typical values. PMBFJ308_309_310 0 −10 Fig 13. Input capacitance as a function of gate-source voltage; typical values. All information provided in this document is subject to legal disclaimers. Rev. 4 — 20 September 2011 © NXP B.V. 2011. All rights reserved. 7 of 15 NXP Semiconductors PMBFJ308; PMBFJ309; PMBFJ310 N-channel silicon field-effect transistors mcd229 103 ID (μA) 102 10 1 10−1 10−2 10−3 −2.5 −2.0 −1.5 −1.0 −0.5 0 VGS (V) VDS = 10 V; Tj = 25 C. Fig 14. Drain current as a function of gate-source voltage; typical values. mcd230 −104 IGSS (pA) −103 (1) −102 (2) −10 (3) −1 (4) −10−1 0 4 8 12 16 VDG (V) Tj = 25 C. (1) ID = 10 mA. (2) ID = 1 mA. (3) ID = 100 A. (4) IGSS. Fig 15. Gate current as a function of drain-gate voltage; typical values. PMBFJ308_309_310 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 4 — 20 September 2011 © NXP B.V. 2011. All rights reserved. 8 of 15 PMBFJ308; PMBFJ309; PMBFJ310 NXP Semiconductors N-channel silicon field-effect transistors mcd231 104 IGSS (pA) 103 102 10 1 10−1 −25 25 75 125 175 Tj (°C) Fig 16. Gate current as a function of junction temperature; typical values. mcd228 102 gis, bis (mS) mcd227 102 gfs,−bfs (mS) 10 bis gfs 10 1 −bfs gis 10−1 10 102 103 1 10 102 103 f (MHz) f (MHz) VDS = 10 V; ID = 10 mA; Tamb = 25 C. VDS = 10 V; ID = 10 mA; Tamb = 25 C. Fig 17. Input admittance; typical values. PMBFJ308_309_310 Product data sheet Fig 18. Forward transfer admittance; typical values. All information provided in this document is subject to legal disclaimers. Rev. 4 — 20 September 2011 © NXP B.V. 2011. All rights reserved. 9 of 15 PMBFJ308; PMBFJ309; PMBFJ310 NXP Semiconductors N-channel silicon field-effect transistors mcd226 −102 brs, grs (mS) mcd225 102 bos, gos (mS) −10 10 brs −1 bos 1 grs −10−1 gos −10−2 10 102 103 10−1 10 102 103 f (MHz) f (MHz) VDS = 10 V; ID = 10 mA; Tamb = 25 C. VDS = 10 V; ID = 10 mA; Tamb = 25 C. Fig 19. Reverse transfer admittance; typical values. PMBFJ308_309_310 Product data sheet Fig 20. Output admittance; typical values. All information provided in this document is subject to legal disclaimers. Rev. 4 — 20 September 2011 © NXP B.V. 2011. All rights reserved. 10 of 15 PMBFJ308; PMBFJ309; PMBFJ310 NXP Semiconductors N-channel silicon field-effect transistors 9. Package outline Plastic surface-mounted package; 3 leads SOT23 D E B A X HE v M A 3 Q A A1 1 2 e1 bp c w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp c D E e e1 HE Lp Q v w mm 1.1 0.9 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 1.9 0.95 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.1 OUTLINE VERSION SOT23 REFERENCES IEC JEDEC JEITA TO-236AB EUROPEAN PROJECTION ISSUE DATE 04-11-04 06-03-16 Fig 21. Package outline. PMBFJ308_309_310 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 4 — 20 September 2011 © NXP B.V. 2011. All rights reserved. 11 of 15 PMBFJ308; PMBFJ309; PMBFJ310 NXP Semiconductors N-channel silicon field-effect transistors 10. Revision history Table 9. Revision history Document ID Release date Data sheet status Change notice Supersedes PMBFJ308_309_310 v.4 20110920 Product data sheet - Modifications: PMBFJ308_309_310 v.3 • The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • • Legal texts have been adapted to the new company name where appropriate. Package outline drawings have been updated to the latest version. PMBFJ308_309_310 v.3 (9397 750 13403) 20040723 Product data sheet - PMBFJ308_309_310 v.2 PMBFJ308_309_310 v.2 (9397 750 01141) 19960911 Product specification - - PMBFJ308_309_310 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 4 — 20 September 2011 © NXP B.V. 2011. All rights reserved. 12 of 15 NXP Semiconductors PMBFJ308; PMBFJ309; PMBFJ310 N-channel silicon field-effect transistors 11. Legal information 11.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 11.2 Definitions Draft — The document is a draft version only. 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NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. 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Export might require a prior authorization from national authorities. PMBFJ308_309_310 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 4 — 20 September 2011 © NXP B.V. 2011. All rights reserved. 13 of 15 NXP Semiconductors PMBFJ308; PMBFJ309; PMBFJ310 N-channel silicon field-effect transistors Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Non-automotive qualified products — Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. 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In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications. 11.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 12. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] PMBFJ308_309_310 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 4 — 20 September 2011 © NXP B.V. 2011. All rights reserved. 14 of 15 NXP Semiconductors PMBFJ308; PMBFJ309; PMBFJ310 N-channel silicon field-effect transistors 13. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 11.1 11.2 11.3 11.4 12 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . 3 Static characteristics. . . . . . . . . . . . . . . . . . . . . 4 Dynamic characteristics . . . . . . . . . . . . . . . . . . 4 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 12 Legal information. . . . . . . . . . . . . . . . . . . . . . . 13 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 13 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Contact information. . . . . . . . . . . . . . . . . . . . . 14 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 20 September 2011 Document identifier: PMBFJ308_309_310