UNISONIC TECHNOLOGIES CO., LTD 4N50 Power MOSFET 4 A, 500 V N-CHANNEL POWER MOSFET 1 DESCRIPTION The UTC 4N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode. The UTC 4N50 is generally applied in high efficiency switch mode power supplies, active power factor correction and electronic lamp ballasts based on half bridge topology. 1 TO-251 1 FEATURES * ID= 4A * VDS=500V * RDS(ON)=2.0Ω @ VGS=10V * High Switching Speed * 100% Avalanche Tested TO-252 1 TO-220 TO-220F SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Note: Ordering Number Lead Free Halogen Free 4N50L-TA3-T 4N50G-TA3-T 4N50L-TF3-T 4N50G-TF3-T 4N50L-TM3-T 4N50G-TM3-T 4N50L-TN3-R 4N50G-TN3-R Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw Copyright © 2013 Unisonic Technologies Co., Ltd Package TO-220 TO-220F TO-251 TO-252 1 G G G G Pin Assignment 2 3 D S D S D S D S Packing Tube Tube Tube Tape Reel 1 of 6 QW-R502-525.E 4N50 Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 500 V Gate-Source Voltage VGSS ±30 V ID 4 A Continuous (TC=25°C) Drain Current Pulsed (Note 3) IDM 16 (Note 2) A Avalanche Current (Note 3) IAR 4 A Single Pulsed (Note 4) EAS 216 mJ Avalanche Energy Repetitive (Note 3) EAR 8.5 mJ Peak Diode Recovery dv/dt (Note 5) dv/dt 4.5 V/ns 85 TO-220 TO-220F W Power Dissipation 28 TO-251/TO-252 52 PD TO-220 0.67 TO-220F Derate above 25°C W/°C 0.22 TO-251/TO-252 0.41 Junction Temperature TJ +150 °C Storage Temperature TSTG -55~+150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Drain current limited by maximum junction temperature 3. Repetitive Rating: Pulse width limited by maximum junction temperature 4. L = 27mH, IAS = 4A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 5. ISD ≤ 4A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C THERMAL DATA PARAMETER TO-220 TO-220F Junction to Ambient TO-251/TO-252 TO-220 TO-220F Junction to Case TO-251/TO-252 SYMBOL UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw θJA θJC RATINGS 62.5 62.5 110 1.47 4.5 2.4 UNIT °C/W °C/W 2 of 6 QW-R502-525.E 4N50 Power MOSFET ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS ID=250µA, VGS=0V Drain-Source Leakage Current IDSS VDS=500V, VGS=0V Forward VGS=+30V, VDS=0V Gate- Source Leakage Current IGSS Reverse VGS=-30V, VDS=0V ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=2A DYNAMIC PARAMETERS Input Capacitance CISS VGS=0V, VDS=25V, f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Total Gate Charge QG VGS=10V, VDS=400V, ID=4A Gate to Source Charge QGS (Note 1, 2) Gate to Drain Charge QGD Turn-ON Delay Time tD(ON) Rise Time tR VDD=250V, ID=4A, RG=25Ω (Note 1, 2) Turn-OFF Delay Time tD(OFF) Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS Maximum Body-Diode Pulsed Current ISM Drain-Source Diode Forward Voltage VSD IS=4A, VGS=0V Body Diode Reverse Recovery Time tRR IS=4A, VGS=0V, dIF/dt=100A/µs (Note 1) Body Diode Reverse Recovery Charge QRR Notes: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2% 2. Essentially independent of operating temperature UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 500 V 25 µA +100 nA -100 nA 2.0 1.6 4.0 2.2 V Ω 485 65 5 650 90 8 pF pF pF 11 3 5 14 21 27 20 15 nC nC nC ns ns ns ns 38 52 64 50 4 16 1.6 350 33 A A V ns µC 3 of 6 QW-R502-525.E 4N50 Power MOSFET TEST CIRCUITS AND WAVEFORMS VDS 90% VGS 10% tD(ON) tD(OFF) tF tR Switching Test Circuit Switching Waveforms VGS QG 10V QGS QGD Charge Gate Charge Test Circuit Gate Charge Waveform BVDSS IAS ID(t) VDS(t) VDD tp Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Time Unclamped Inductive Switching Waveforms 4 of 6 QW-R502-525.E 4N50 Power MOSFET TEST CIRCUITS AND WAVEFORMS(Cont.) D.U.T. + VDS - + - L RG Driver VGS VDD * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test Same Type as D.U.T. Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period D= P.W. P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 6 QW-R502-525.E 4N50 Drain Current, ID (µA) Drain Current, ID (µA) TYPICAL CHARACTERISTICS Drain Current, ID (A) Drain Current, ID (A) Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R502-525.E