Datasheet

UNISONIC TECHNOLOGIES CO., LTD
4N50
Power MOSFET
4 A, 500 V N-CHANNEL
POWER MOSFET
1

DESCRIPTION
The UTC 4N50 is an N-channel mode power MOSFET using
UTC’s advanced technology to provide customers with planar stripe
and DMOS technology. This technology allows a minimum on-state
resistance and superior switching performance. It also can withstand
high energy pulse in the avalanche and commutation mode.
The UTC 4N50 is generally applied in high efficiency switch mode
power supplies, active power factor correction and electronic lamp
ballasts based on half bridge topology.
1
TO-251
1

FEATURES
* ID= 4A
* VDS=500V
* RDS(ON)=2.0Ω @ VGS=10V
* High Switching Speed
* 100% Avalanche Tested

TO-252
1
TO-220
TO-220F
SYMBOL
2.Drain
1.Gate
3.Source

ORDERING INFORMATION
Note:
Ordering Number
Lead Free
Halogen Free
4N50L-TA3-T
4N50G-TA3-T
4N50L-TF3-T
4N50G-TF3-T
4N50L-TM3-T
4N50G-TM3-T
4N50L-TN3-R
4N50G-TN3-R
Pin Assignment: G: Gate D: Drain
S: Source
www.unisonic.com.tw
Copyright © 2013 Unisonic Technologies Co., Ltd
Package
TO-220
TO-220F
TO-251
TO-252
1
G
G
G
G
Pin Assignment
2
3
D
S
D
S
D
S
D
S
Packing
Tube
Tube
Tube
Tape Reel
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4N50
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Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
500
V
Gate-Source Voltage
VGSS
±30
V
ID
4
A
Continuous (TC=25°C)
Drain Current
Pulsed (Note 3)
IDM
16 (Note 2)
A
Avalanche Current (Note 3)
IAR
4
A
Single Pulsed (Note 4)
EAS
216
mJ
Avalanche Energy
Repetitive (Note 3)
EAR
8.5
mJ
Peak Diode Recovery dv/dt (Note 5)
dv/dt
4.5
V/ns
85
TO-220
TO-220F
W
Power Dissipation
28
TO-251/TO-252
52
PD
TO-220
0.67
TO-220F
Derate above 25°C
W/°C
0.22
TO-251/TO-252
0.41
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Drain current limited by maximum junction temperature
3. Repetitive Rating: Pulse width limited by maximum junction temperature
4. L = 27mH, IAS = 4A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
5. ISD ≤ 4A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C

THERMAL DATA
PARAMETER
TO-220
TO-220F
Junction to Ambient
TO-251/TO-252
TO-220
TO-220F
Junction to Case
TO-251/TO-252
SYMBOL
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
θJA
θJC
RATINGS
62.5
62.5
110
1.47
4.5
2.4
UNIT
°C/W
°C/W
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Power MOSFET
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
ID=250µA, VGS=0V
Drain-Source Leakage Current
IDSS
VDS=500V, VGS=0V
Forward
VGS=+30V, VDS=0V
Gate- Source Leakage Current
IGSS
Reverse
VGS=-30V, VDS=0V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250µA
Static Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=2A
DYNAMIC PARAMETERS
Input Capacitance
CISS
VGS=0V, VDS=25V, f=1.0MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Total Gate Charge
QG
VGS=10V, VDS=400V, ID=4A
Gate to Source Charge
QGS
(Note 1, 2)
Gate to Drain Charge
QGD
Turn-ON Delay Time
tD(ON)
Rise Time
tR
VDD=250V, ID=4A, RG=25Ω
(Note 1, 2)
Turn-OFF Delay Time
tD(OFF)
Fall-Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
Maximum Body-Diode Pulsed Current
ISM
Drain-Source Diode Forward Voltage
VSD
IS=4A, VGS=0V
Body Diode Reverse Recovery Time
tRR
IS=4A, VGS=0V, dIF/dt=100A/µs
(Note 1)
Body Diode Reverse Recovery Charge
QRR
Notes: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%
2. Essentially independent of operating temperature
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN TYP MAX UNIT
500
V
25
µA
+100 nA
-100 nA
2.0
1.6
4.0
2.2
V
Ω
485
65
5
650
90
8
pF
pF
pF
11
3
5
14
21
27
20
15
nC
nC
nC
ns
ns
ns
ns
38
52
64
50
4
16
1.6
350
33
A
A
V
ns
µC
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Power MOSFET
TEST CIRCUITS AND WAVEFORMS
VDS
90%
VGS
10%
tD(ON)
tD(OFF)
tF
tR
Switching Test Circuit
Switching Waveforms
VGS
QG
10V
QGS
QGD
Charge
Gate Charge Test Circuit
Gate Charge Waveform
BVDSS
IAS
ID(t)
VDS(t)
VDD
tp
Unclamped Inductive Switching Test Circuit
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Time
Unclamped Inductive Switching Waveforms
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Power MOSFET
TEST CIRCUITS AND WAVEFORMS(Cont.)
D.U.T.
+
VDS
-
+
-
L
RG
Driver
VGS
VDD
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Same Type
as D.U.T.
Peak Diode Recovery dv/dt Test Circuit
VGS
(Driver)
Period
D=
P.W.
P. W.
Period
VGS= 10V
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(D.U.T.)
VDD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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Drain Current, ID (µA)
Drain Current, ID (µA)
TYPICAL CHARACTERISTICS
Drain Current, ID (A)
Drain Current, ID (A)

Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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